Data Sheet No.PD 60150-J
IPS031(S)
FULLY PROTECTED POWER MOSFET SWITCH
Product Summary
Features
•
•
•
•
•
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
Description
The IPS031/IPS031S are fully protected three terminal
SMART POWER MOSFETs that feature over-current,
over-temperature, ESD protection and drain to source
active clamp.These devices combine a HEXFET®
POWER MOSFET and a gate driver. They offer full
protection and high reliability required in harsh environments. The driver allows short switching times
and provides efficient protection by turning OFF the
power MOSFET when the temperature exceeds 165oC
or when the drain current reaches 12A. The device
restarts once the input is cycled. The avalanche capability
is significantly enhanced by the active clamp and covers
most inductive load demagnetizations.
Rds(on)
60mΩ (max)
V clamp
50V
Ishutdown
12A
Ton/Toff
1.5µs
Packages
3-Lead D2Pak
IPS031S
3-Lead TO-220
IPS031
Typical Connection
Load
R in series
(if needed)
D
IN
Q
control
S
S
Logic signal
(Refer to lead assignment for correct pin configuration)
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1
IPS031(S)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard footprint with 70 µm copper thickness.
Symbol Parameter
Min.
Max.
—
47
Maximum input voltage
-0.3
7
V
Maximum IN current
-10
+10
mA
rth=62oC/W IPS031
—
2.8
rth=5oC/W
—
Vds
Maximum drain to source voltage
Vin
Iin, max
Isd cont.
Diode max. continuous current (1)
rth=80oC/W
IPS031
IPS031S
Isd pulsed Diode max. pulsed current (1)
Pd
Maximum power dissipation(1)
—
18
2.2
—
18
(rth=62oC/W) IPS031
—
2
(rth=80oC/W) IPS031S
—
1.56
ESD1
Electrostatic discharge voltage (Human Body)
—
4
ESD2
Electrostatic discharge voltage (Machine Model)
—
0.5
T stor.
Tj max.
Max. storage temperature
-55
150
Max. junction temperature
-40
+150
Tlead
Lead temperature (soldering, 10 seconds)
—
300
Min.
Typ.
—
—
—
—
—
60
3
80
60
3
Units
Test Conditions
TO220 free air
TO220 with Rth=5oC/W
SMD220 Std. footprint
A
W
C=100pF, R=1500Ω,
kV
o
C=200pF, R=0Ω, L=10µH
C
Thermal Characteristics
Symbol Parameter
Rth
Rth
Rth
Rth
Rth
1
2
1
2
3
Thermal
Thermal
Thermal
Thermal
Thermal
resistance
resistance
resistance
resistance
resistance
free air
junction to case
with standard footprint
with 1" square footprint
junction to case
Max. Units Test Conditions
—
—
—
—
—
TO-220
o
C/W
D2PAK (SMD220)
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min.
Max.
Vds (max)
VIH
VIL
I ds
—
4
0
35
6
0.5
—
—
0.2
—
0
3.1
2.8
5
1
1
Continuous drain to source voltage
High level input voltage
Low level input voltage
Continuous drain current
Tamb=85 o C
(TAmbient = 85oC, IN = 5V, rth = 60oC/W, Tj = 125oC) IPS031
(TAmbient = 85oC, IN = 5V, rth = 80oC/W, Tj = 125oC) IPS031S
Rin
Recommended resistor in series with IN pin
Tr-in(max) Max recommended rise time for IN signal (see fig. 2)
Fr-Isc (2) Max. frequency in short circuit condition (Vcc = 14V)
Units
V
A
kΩ
µS
kHz
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Application. Notes.
2
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IPS031(S)
Static Electrical Characteristics
(Tj = 25oC unless otherwise specified.)
Symbol Parameter
Rds(on)
Rds(on)
Idss
Min.
Typ.
ON state resistance Tj = 25oC
ON state resistance Tj = 150oC
Drain to source leakage current
20
—
0
45
75
0.5
Max. Units Test Conditions
60
100
25
Drain to source leakage current
0
5
50
Drain to source clamp voltage 1
Drain to source clamp voltage 2
IN to source clamp voltage
IN threshold voltage
ON state IN positive current
OFF state IN positive current
47
50
7
1
25
50
52
53
8.1
1.6
90
130
56
60
9.5
2
200
250
@Tj=25oC
Idss2
mΩ
Vin = 5V, Ids = 1A
Vcc = 14V, Tj = 25oC
µA
Vcc = 40V, Tj = 25oC
@Tj=25oC
V clamp 1
V clamp 2
Vin clamp
Vth
Iin, -on
Iin, -off
V
µA
Id = 20mA (see Fig.3 & 4)
Id=Ishutdown (see Fig.3 & 4)
Iin = 1 mA
Id = 50mA, Vds = 14V
Vin = 5V
Vin = 5V
over-current triggered
Switching Electrical Characteristics
Vcc = 14V, Resistive Load = 5Ω , Rinput = 50Ω, 100µs pulse,Tj = 25oC, (unless otherwise specified).
Symbol Parameter
Min.
Ton
Tr
Trf
Toff
Tf
Qin
0.05
0.4
—
0.8
0.5
—
0.3
1
8
2
1.5
11
Min.
Typ.
—
10
1.5
2
—
165
14
2.3
10
400
Turn-on delay time
Rise time
Time to 130% final Rds(on)
Turn-off delay time
Fall time
Total gate charge
Typ. Max. Units Test Conditions
0.6
2
—
3.5
2.5
—
See figure 2
µs
See figure 2
nC
Vin = 5V
Protection Characteristics
Symbol Parameter
T sd
I sd
V reset
Treset
EOI_OT
Over temperature threshold
Over current threshold
IN protection reset threshold
Time to reset protection
Short circuit energy (see application note)
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Max. Units Test Conditions
—
18
3
40
—
o
C
A
V
µs
µJ
See fig. 1
See fig. 1
Vin = 0V, Tj = 25oC
Vcc = 14V
3
IPS031(S)
Functional Block Diagram
All values are typical
DRAIN
47 V
300 Ω
IN
8.1 V
S
Q
R
Q
200 kΩ
I sense
80 µA
T > 165°c
I > 1sd
SOURCE
Lead Assignments
2 (D)
2 (D)
1
3
In D S
1
In
2
D
3
S
TO-220
D2PAK (SMD220)
IPS031
IPS031S
Part Number
4
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IPS031(S)
Vin
5V
90 %
0V
Vin 10 %
Tr-in
t < T reset
Ids
t > T reset
I shutdown
Isd
90 %
Ids
10 %
Td on
Td off
tr
T
tf
T shutdown
Tsd
Vds
(165 °c)
Figure 1 - Timing diagram
Figure 2 - IN rise time & switching time definitions
T clamp
L
Vin
Rem : V load is negative
during demagnetization
V load
+
R
14 V
-
Ids
Vin
Vds clamp
5v
0v
( Vcc )
Vds
D
IN
Vds
S
Ids
( see Appl . Notes to evaluate power dissipation )
Figure 3 - Active clamp waveforms
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Figure 4 - Active clamp test circuit
5
IPS031(S)
All curves are typical values with standard footprints. Operating in the shaded area is not recommended.
100
200%
90
180%
80
160%
70
140%
o
Tj = 150 C
120%
60
100%
50
40
80%
o
Tj = 25 C
30
60%
20
40%
10
20%
0
0
1
2
3
4
5
6
7
8
0%
-50 -25
25
50
75 100 125 150 175
Figure 6 - Normalised Rds ON (%) Vs Tj (oC)
Figure 5 - Rds ON (mΩ) Vs Input Voltage (V)
10
10
9
9
8
8
toff delay
fall tim e
7
7
ton delay
rise tim e
130% final rdson
6
5
4
6
5
4
3
3
2
2
1
1
0
0
0
1
2
3
4
5
6
7
8
Figure 7 - Turn-ON Delay Time, Rise Time & Time
to 130% final Rds(on) (us) Vs Input Voltage (V)
6
0
0
1
2
3
4
5
6
7
8
Figure 8 - Turn-OFF Delay Time & Fall Time (us)
Vs Input Voltage (V)
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IPS031(S)
100
100
delay off
delay on
rise tim e
130% rdson
fall tim e
10
10
1
1
0 .1
0 .1
10
100
1000
10
10000
Figure 9 - Turn-ON Delay Time, Rise Time & Time
to 130% final Rds(on) (us) Vs IN Resistor (Ω)
1000
10000
Figure 10 - Turn-OFF Delay Time & Fall
Time (us) Vs IN Resistor (Ω)
20
20
18
18
16
16
14
14
12
12
10
10
8
8
6
100
6
4
Isd 25°C
4
2
Ilim 25°C
2
0
0
1
2
3
4
5
6
7
Figure 11 - Current Iimitation & I shutdown (A)
Vs Vin (V)
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0
-50 -25
0
25
50
75 100 125 150
Figure 12 - I shutdown (A) Vs Temperature (oC)
7
IPS031(S)
100
20
rth = 5°C/W
rth = 15°C/W
1" footprint 35°C/W
std. footprint 60°C/W
18
16
14
- - - - Tj=25 °C
_____Tj = 100 °C
Free air / standard footprint
12
10
10
8
6
4
2
0
-50
0
50
100
150
200
1
Figure 14 - Ids (A) Vs Protection Resp. Time (s)
IPS031 & IPS031S
Figure 13 - Max.Cont. Ids (A) Vs Amb.
Temperature (oC)
100
s ingle puls e m ax. curre nt
100 Hz rth=60°C/W dT=25°C
1k Hz rth=60°C/W dT=25°C
100
10
10
1
1
0.1
0.1
0 .0 1
Vbat = 14 V
Tjini = T sd
0.01
0 .1
1
10
100
Figure 15 - Iclamp (A) Vs Inductive Load (mH)
8
____ Rth free air/std. footprint
- - - - - Rth junction to case
Fig.16 - Transient Thermal Impedance (oC/W)
Vs Time (s) - IPS031/IPS031S
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IPS031(S)
200
120%
180
115%
160
110%
140
120
105%
100
100%
80
95%
60
90%
40
Iin,on
20
Iin,off
85%
0
80%
-50 -25
0
-50
-25
25
50
75
100 125 150
Figure 17 - Input current (µA) Vs Junction (oC)
16
14
Treset
rise tim e
12
fall tim e
Vds clam p @ Isd
Vin clam p @ 10m A
0
25
50
75 100 125 150
Figure 18 - Vin clamp and V clamp2 (%)
Vs Tj (oC)
10
8
6
4
2
0
-50
-25
0
25
50
75
100 125 150
Figure 19 - Turn-on, Turn-off, and treset (µs)
Vs Tj (oC)
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IPS031(S)
Case Outline
2
NOTES:
2X
3-Lead TO-220AB
3-Lead D2PAK
10
01-6024 00
IRGB 01-3026 01 (TO-220AB)
01-6022 00
01-0016 05 (TO-263AB)
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IPS031(S)
Tape & Reel - D2PAK (SMD220)
01-3072 00
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
Data and specifications subject to change without notice. 6/11/2001
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