Vout Vdd Vss R - + Vdd/2 - University of California, Berkeley

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UNIVERSITY OF CALIFORNIA AT BERKELEY
College of Engineering
Department of Electrical Engineering and Computer Science
R. W. Brodersen
Mike Chen
Design Problem 2
(Due 3/02/04)
EECS 140
Spring 2004
1. Design Specification
Now we know how to design single-ended amplifier in design problem 1. In design
problem 2, you are asked to design a differential input CMOS amplifier with a gain of at
least 15,000, while driving a resistive load, shown in Figure 1. The available circuit
components are NMOS transistors, PMOS transistors or resistors. Ideal sources can only
be used to generate the supply voltages, not to generate bias currents or voltages. The
design specifications are as following,
- Lmin = 0.13µm, Wmin,nmos = 0.15µm, Wmin,pmos = 0.15µm;
- Vdd = 1.2 V, Vss = 0 V;
- RL = 50Ω;
- Input common-mode voltage swings 0.5V, with less than 10% Adm variation. You are
free to choose the midpoint of input common-mode range;
- Output voltage swings from Vdd/2 - 0.35V to Vdd/2 + 0.35V, with less than 10% Adm
variation;
- Adm: Total differential mode gain Vout/Vid >= 15,000;
- Acm: Total common mode gain Vout/Vic <= 0.1.
The design goal is to minimize the following figure of merit (Watts*µm2),
FOM = Power ⋅ Area
Vdd
Vi1
+
Vout
Vi2
-
RL
Vss
Figure 1
Vdd/2
2. Area Calculation
Calculate the area by adding up the gate area (W*L) of all the transistors and the area of
the resistors. For the transistors, the minimum L is 0.13 µm and the minimum W is 0.15
µm. For the resistors, the minimum W and L are 0.5 µm; the sheet resistance is
2501/square. You are allowed to tie the bulk of any transistor to the source instead of to
the positive or negative supply, but at the cost of an area penalty. If you choose to tie the
bulk to the source, the area of the transistor should be doubled.
3. Device Models
http://bwrc.eecs.berkeley.edu/classes/ee140/dp/model_ee140.sp
The device models are encapsulated in a sub-circuit; use:
x1 d g s b nmos w=10u l=0.13u
x2 d g s b pmos w=10u l=0.13u
to instantiate an NMOS and a PMOS transistor respectively (you have to use the prefix
‘x’ instead of ‘m’). The reason for using a subcircuit is to allow 2 to decrease with
increasing transistor length. The output resistance parameter 2 will stay the same as
before for minimum length transistors (Lmin=0.13µm), but will decrease with increasing L
(drawn L, not effective L). Since the output resistance is proportional to 1/ 2, the output
resistance increases with increasing L. Since we are using level-2 device model, it is
worthwhile to calculate level-1 parameters of the device model for your hand
calculations. (Ref: problem 1 of HW1, extracting K’, 2, γ, etc.)
4. Run testbench
Perform dc operation point and small-signal transfer function analysis:
Testbench 1:
1. Operating point and differential mode gain for VIC = midpoint
• Purpose: check specs for Adm, Psupply, VOUT = 0.6 V for VID = 0 V, VDsat
2. Operating point and differential mode gain for VIC = midpoint + 0.25 V.
• Purpose: check common mode range
• Adm may vary up to 10 % from the value at the midpoint of the common mode
range
3. Operating point and differential mode gain for VIC = midpoint – 0.25 V.
• Purpose: check common mode range
• Adm may vary up to 10 % from the value at the midpoint of the common mode
range.
4. Common mode gain for VIC = midpoint.
• Purpose: check Acm.
Testbench 2:
1. AC analysis (differential mode gain) at 1 Hz for VOUT = 0.6 V.
2. AC analysis (differential mode gain) at 1 Hz for VOUT = (0.6+0.35) V.
• Purpose: check output range
• Adm may vary up to 10 % from the value for VOUT = 0.6 V.
3. AC analysis (differential mode gain) at 1 Hz for VOUT = (0.6-0.35) V.
• Purpose: check output range
• Adm may vary up to 10 % from the value for VOUT = 0.6 V.
Usage: put testbench1_dp2.sp, testbench2_dp2.sp, model_ee140.sp,
circuit.sp in the same directory and run ‘hspice testbench1_dp2.sp –o
testbench1_dp2’, and ‘hspice testbench2_dp2.sp –o
testbench2_dp2’
5. What to include in your report
http://bwrc.eecs.berkeley.edu/classes/ee140/dp/guidelines_dp2.pdf
6. Grading
100 points total:
45 points for conciseness and clearness of the report
45 points for meeting the specifications
10 points for how well FOM is minimized
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