V i sh ay I n t e rt e ch n o l o g y, I n c .
I
INNOVAT
AND TEC
O L OGY
BCR
N
HN
Thin Film Resistor
O
19
62-2012
Resistors - Space Saving, Back Contact
Thin Film, Back Contact Resistor
Key Benefits
•
•
•
•
•
Requires only one wire bond, thus saving space
Second electrical connection is made through the back of the chip
Chips can be attached either eutectically or with conductive epoxy
Smaller footprints than alternative configurations
Tighter tolerances available upon request
APPLICATIONS
• Hybrid packages
Resources
• Datasheet: BCR - http://www.vishay.com/doc?61023
• For technical questions contact efi@vishay.com
One of the World’s Largest Manufacturers of
Discrete Semiconductors and Passive Components
PRODUCT SHEET
1/2
VMN-PT9012-1202
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V i sh ay I n t e rt e ch n o l o g y, I n c .
I
INNOVAT
19
www.vishay.com
62-2012
BCR
BCR
www.vishay.com
O L OGY
BCR
AND TEC
N
HN
Thin Film Resistor
O
Vishay Electro-Films
Vishay Electro-Films
Thin Film, Back Contact Resistor
Thin Film, Back-Contact
Resistor
Thin Film, Back-Contact
Resistor
FEATURES
Resistors - Space Saving, Back Contact
FEATURES
• Wire bondable
• Only one wire bond required
• Only one wire bond required
Small size: 0.020 inches square
• Small size: 0.020 inches•square
• Wire bondable
• Resistance range: 10  •toResistance
1 M
range: 10  to 1 M
• Oxidized silicon substrate
for good silicon
power substrate
dissipationfor good power dissipation
• Oxidized
• Resistor material: Tantalum
nitride,material:
self-passivating
• Resistor
Tantalum nitride, self-passivating
Product may not be to scale Product may not be to scale
• Moisture
resistant
• Moisture resistant
he Back Contact Resistor
(BCR) Contact
series single-value
The Back
Resistor (BCR) series
single-value
back-contact
resistor
chip chips
is one of the
smallest
chips
• Case size: 0202
ack-contact resistor chip
is one of the
smallest
www.vishay.com
• Case size: 0202
www.vishay.com
vailable.
available.
APPLICATIONS
Thewire
BCR
requires
one
wire bond thus
saving hybrid
APPLICATIONS
he BCR requires only one
bond
thus only
saving
hybrid
DIMENSIONS
in inches
pace.
space.
EFIwidely
BCR resistor
are widely used
in hybrid
DIMENSIONS
in inches
Vishay EFI BCR
resistor Vishay
chips are
used in chips
hybrid
The BCRs
manufactured
using Vishay
Electro-Films
he BCRs are manufactured
using are
Vishay
Electro-Films
packages where space is limited.
The
bottom
connection
is The bottom connection is
packages
where
space
is limited.
EFI) sophisticated thin film
equipment
and manufacturing
(EFI)
sophisticated
thin film equipment and
manufacturing
made
the substrate
back of the chip to the substrate
made
by attaching the back
of by
theattaching
chip to the
echnology. The BCRs are
100 % electrically
and% electrically
technology.
The BCRstested
are 100
tested andor with conductive
either eutectically
epoxy. or
The
single
wire
either eutectically
with
conductive
epoxy. The single wire
sually inspected to MIL-STD-883,
method to
2032
class H
visually inspected
MIL-STD-883,
method
class
H notched
bond 2032
is made
to the
padison
the top
of the
chip. pad
(Theon the top of the chip. (The
bond
made
to the
notched
r K.
or K.
other rectangular pad on the
toprectangular
of the chippad
is aon
viathe
hole,
other
topa of the chip is a via hole, a
low-ohmic contact connecting
the resistor
to connecting
the bottom the
of resistor to the bottom of 0.020
low-ohmic
contact
the chip.)
the chip.)
Vis
TEMPERATURE
TEMPERATURE COEFFICIENT
OF RESISTANCE,
VALUES,
AND TOLERANCES
COEFFICIENT
OF RESISTANCE,
VALUES, AND TOLERANCES
Standard Tolerances
PARAMETER
Total Resistance Range
Standard Tolerances
TCR
TCR
PARAMETER
Total Resistance Range
VALUE UNIT
VALUE
UNIT
10 to 1M
10RANGE
to 1M 
TYPICAL RANGE
TYPICAL
10±Ω0.2,
to 29
300.2,
Ω to±81
Ω ± 1,%± 2, ± 5
0.5,
± 0.1,
±Ω
0.5, ± 1, ± 2, ±±5 0.1, ±
TYPICAL
RANGE

TYPICAL
RANGE
Ω to
29ΩΩ
82 10
Ω to
819
%
TYPICA
TYP
30 Ω
82
%
ppm/°C
± 25, ± 50, ± 100,
± 250
± 25, ± 50, ± 100, ± 250
ppm/°C
Note
Note
• Notched
area represents
top bonding
•
Notched
shaded
area
represents
top
bonding
pad.
The
backside
of the shaded
chip constitutes
the second
resisto
Tightest
Standard
Tolerance
Available
Tightest Standard Tolerance Available
5%
2%
1%
0.5 % 0.2 %5 %
2%
1%
0.5 % 0.2 %
± 100 ppm/°C
± 250 ppm/°C
± 100 ppm/°C
± 250 ppm/°C
20 Ω 50 Ω
Back of Chip
360 kΩ
1 MΩ
200 kΩ
620 kΩ
360 kΩ
1 MΩ
200ΩkΩ200 Ω620
1 kΩ
100
Ω Ω
1 kΩ
100 Ω 200 10
20 Ω 50 Ω
Bond Pad
± 25 ppm/°C
± 50 ppm/°C
± 25 ppm/°C
± 50 ppm/°C
10 Ω
SCHEMATIC
0.1 %
0.1 %
2%
1%
0.5 %
SCHEMATIC
MECHANICAL SPECIFICATIONS
PARAMETER
PARAMETER
PARAMETER
Noise, MIL-STD-202, MethodNoise,
308 MIL-STD-202, Method 308
100  to 250 k
100  to 250 k
< 100  or > 251 k
< 100  or > 251 k
VALUE
Chip Thickness
PARAMETER
VALUE
Chip Size
0.020"
x
0.020"
±
0.002"
(0.50 mm x 0.50
Chip Thickness
VALUE UNIT
UNIT
0.010"
±
0.003"
(0.253 mm ± 0.0
Chip Substrate Material
OxidizeddB
silicon, 10 kÅ minimum
- 35 typ. dB Resistor Material
- 20 typ.
Bonding Pad SizeTantalum nitride, self-passiva
± 0.5 max. R/R
%
% Number of Pads
0.004" x 0.004"
(0.100 mm x 0.1
% Pad Material
± 1.0 max. R/R
%
1
- 55 to + 125°C Backing
°C
10 kÅ minimum aluminum
(15 kÅ minimu
% Recommended Attachment
± 0.25 max. R/R
% Method
3 kÅ minimum gold
%
± 0.5 max. R/R
%
Eutectic or conductive epo
V
200
V
STANDARD
STANDARD ELECTRICAL
SPECIFICATIONS
ELECTRICAL SPECIFICATIONS
Chip Size
MECHANICAL SPECIFICATIONS
Revision 08-Aug-11
Chip Substrate Material
- 35 typ.
Resistor Material - 20 typ.
Moisture
resistance,
106 Pad Size
Moisture resistance, MIL-STD-202,
Method
106 MIL-STD-202, Method
± 0.5 max. R/R
Bonding
Stability, 1000 h, + 125 °C, 125
mW 1000 h, + 125 °C, 125 mW
Stability,
Number of Pads± 1.0 max. R/R
Operating Temperature Range
- 55 to + 125
Operating Temperature Range
Pad Material
Thermal Shock, MIL-STD-202,
Method
F
107, Test
Condition Method
± 0.25 max. R/R
Thermal
Shock,
MIL-STD-202,
F
107, Test Condition
Backing
High Temperature Exposure, High
+ 150Temperature
°C, 100 h Exposure, + 150 °C, 100 h
± 0.5 max. R/R
Recommended Attachment Method
Dielectric Voltage BreakdownDielectric Voltage Breakdown
200
GLOBAL PART NUMBER
INFORM
Insulation Resistance
1012 min. 

Insulation Resistance
1012 min.
Global
Part
Number:
BCR50000FKAHWS
75
max.
Operating Voltage
75
max.
V
Operating Voltage
V
GLOBAL PART NUMBER INFORMATION
Global Part Number Description: BCR 5K 1
DC Power Rating at + 70 °C (Derated
to Rating
zero atat
++
175
W
DC Power
70 °C)
°C (Derated to zero
at +Part
175 °C)
0.250
W
Global
Number:0.250
BCR50000FKAHWS
B ClassCH, WS
5
0
Global
BCR 5K
1 %,max.
100 R/R
ppm/°C,
Al term.,
5 x Rated Power Short-Time Overload,
25 °C,
5s
± 0.25 Description:
max. R/R
%
5 x Rated +
Power
Short-Time
Overload, + 25
°C, 5Part
s Number
± 0.25
%R
Revision: 08-Aug-11
B
C
R
5
0
0
0
0
F
K
A
Document Number: 61023 Document Number: 61023 RESISTANCE
VMN-PT9012-1202
MODEL
RESISTANCE
MULTILPLIER
For technical questions, contact: efi@vishay.com
For technical questions, contact: efi@vishay.com
CODE
VISUA
RESISTANCE
THIS DOCUMENT IS SUBJECT
TODOCUMENT
CHANGE WITHOUT
NOTICE.
THE PRODUCTS
DESCRIBED
HEREIN
AND THIS
DOCUMENT
THIS
IS SUBJECT
TO CHANGE
WITHOUT
NOTICE. THE
PRODUCTS
DESCRIBED
HEREIN AND THIS
TOLERANCE
TCRDOCUMENT
MODEL
RESISTANCE
MULTILPLIER
TERMINATION (per MIL
BCR
ARE SUBJECT TO SPECIFICARE
DISCLAIMERS,
SET
FORTH AT
www.vishay.com/doc?91000
SUBJECT
TO
SPECIFIC
DISCLAIMERS,
SET FORTH
AT www.vishay.com/doc?91000
This document is subject to change
without notice.
THE PRODUCTS
DESCRIBED
HEREIN AND
THIS DOCUMENT ARE SUBJECT
CODE
(ppm/°C)First 4 digits areTO B = 0.01
CODE
Metho
20 x 20 size significant figures
A = 0.1
SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
0=H
1 =C
BCR
First 4 digits are
B = 0.01
E = ± 25 of resistance
B = 0.1 %back contact
G = Gold
evision: 08-Aug-11
PRODUCT SHEET
1
1
2/21
For technical questions, contact: efi@vishay.com