DTA114EM3T5G Series Preferred Devices Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The digital transistor eliminates these individual components by integrating them into a single device. The use of a digital transistor can reduce both system cost and board space. The device is housed in the SOT−723 package which is designed for low power surface mount applications. • • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count The SOT−723 Package can be Soldered using Wave or Reflow. Available in 4 mm, 8000 Unit Tape & Reel These are Pb−Free Devices http://onsemi.com PNP SILICON DIGITAL TRANSISTORS PIN 3 COLLECTOR (OUTPUT) PIN 1 BASE (INPUT) R1 R2 PIN 2 EMITTER (GROUND) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Collector Current MARKING DIAGRAM 3 XX M 2 1 xx M SOT−723 CASE 631AA Style 1 = Specific Device Code (See Marking Table on page 2) = Date Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2004 February, 2004 − Rev. 0 1 Publication Order Number: DTA114EM3/D DTA114EM3T5G Series ORDERING INFORMATION, DEVICE MARKING AND RESISTOR VALUES Device DTA114EM3T5G DTA124EM3T5G* DTA144EM3T5G DTA114YM3T5G DTA114TM3T5G DTA143TM3T5G* DTA123EM3T5G* DTA143EM3T5G* DTA143ZM3T5G* DTA124XM3T5G DTA123JM3T5G* DTA115EM3T5G DTA144WM3T5G* Marking R1 (K) R2 (K) Package Shipping† 6A 6B 6C 6D 6E 6F 6H 6J 6K 6L 6M 6N 6P 10 22 47 10 10 4.7 2.2 4.7 4.7 22 2.2 100 47 10 22 47 47 ∞ ∞ 2.2 4.7 47 47 47 100 22 SOT−723 (Pb−Free) 8000/Tape & Reel *Available upon request †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation, FR−4 Board (Note 1.) @ TA = 25°C Derate above 25°C Max Unit 260 2.0 mW mW/°C 480 °C/W 600 4.8 mW mW/°C RJA 205 °C/W TJ, Tstg −55 to +150 °C PD Thermal Resistance, Junction to Ambient (Note 1.) RJA Total Device Dissipation, FR−4 Board (Note 2.) @ TA = 25°C Derate above 25°C PD Thermal Resistance, Junction to Ambient (Note 2.) Junction and Storage Temperature Range 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 × 1.0 Inch Pad http://onsemi.com 2 DTA114EM3T5G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − − − − − − − − − − − − − − − − − − − − − − − − − − 0.5 0.2 0.1 0.2 0.9 1.9 2.3 1.5 0.18 0.13 0.2 0.05 0.13 mAdc Collector−Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 − − Vdc Collector−Emitter Breakdown Voltage (Note 3.) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc hFE 35 60 80 80 160 160 8.0 15 80 80 80 80 80 60 100 140 140 250 250 15 27 140 130 140 150 140 − − − − − − − − − − − − − VCE(sat) − − 0.25 − − − − − − − − − − − − − − − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 4.9 − − OFF CHARACTERISTICS DTA114EM3T5G DTA124EM3T5G DTA144EM3T5G DTA114YM3T5G DTA114TM3T5G DTA143TM3T5G DTA123EM3T5G DTA143EM3T5G DTA143ZM3T5G DTA124XM3T5G DTA123JM3T5G DTA115EM3T5G DTA144WM3T5G ON CHARACTERISTICS (Note 3.) DC Current Gain (VCE = 10 V, IC = 5.0 mA) DTA114EM3T5G DTA124EM3T5G DTA144EM3T5G DTA114YM3T5G DTA114TM3T5G DTA143TM3T5G DTA123EM3T5G DTA143EM3T5G DTA143ZM3T5G DTA124XM3T5G DTA123JM3T5G DTA115EM3T5G DTA144WM3T5G Collector−Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5 mA) DTA123EM3T5G (IC = 10 mA, IB = 1 mA) DTA114TM3T5G/DTA143TM3T5G/ DTA143ZM3T5G/DTA124XM3T5G/DTA143EM3T5G Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 k) VOL DTA114EM3T5G DTA124EM3T5G DTA114YM3T5G DTA114TM3T5G DTA143TM3T5G DTA123EM3T5G DTA143EM3T5G DTA143ZM3T5G DTA124XM3T5G DTA123JM3T5G DTA144EM3T5G DTA115EM3T5G DTA144WM3T5G Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) DTA114TM3T5G (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) DTA143TM3T5G DTA123EM3T5G DTA143EM3T5G VOH 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% http://onsemi.com 3 Vdc Vdc Vdc DTA114EM3T5G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Input Resistor Min Typ Max Unit R1 7.0 15.4 32.9 7.0 7.0 3.3 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 2.9 6.1 6.1 28.6 2.86 130 61.1 k 0.8 0.17 − 0.8 0.055 0.38 0.038 1.7 1.0 0.21 − 1.0 0.1 0.47 0.047 2.1 1.2 0.25 − 1.2 0.185 0.56 0.056 2.6 DTA114EM3T5G DTA124EM3T5G DTA144EM3T5G DTA114YM3T5G DTA114TM3T5G DTA143TM3T5G DTA123EM3T5G DTA143EM3T5G DTA143ZM3T5G DTA124XM3T5G DTA123JM3T5G DTA115EM3T5G DTA144WM3T5G DTA114EM3T5G/DTA124EM3T5G/DTA144EM3T5G R1/R2 DTA115EM3T5G DTA114YM3T5G DTA114TM3T5G/DTA143TM3T5G DTA123EM3T5G/DTA143EM3T5G DTA143ZM3T5G DTA124XM3T5G DTA123JM3T5G DTA144WM3T5G PD , POWER DISSIPATION (MILLIWATTS) Resistor Ratio / Symbol 300 250 200 150 100 50 0 −50 RJA = 480°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve http://onsemi.com 4 150 DTA114EM3T5G Series 1000 1 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − DTA114EM3T5G TA=−25°C 0.1 25°C 75°C 0.01 0 20 25°C 100 10 −25°C 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 50 1 100 3 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 2 1 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) TA=−25°C 10 1 0.1 0.01 0.001 50 100 VO = 5 V 0 1 2 6 7 3 4 5 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 25°C 75°C 1 0 10 8 9 Figure 5. Output Current versus Input Voltage 10 0.1 100 25°C 75°C Figure 4. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) TA=75°C IC, COLLECTOR CURRENT (mA) 40 4 0 VCE = 10 V 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 6. Input Voltage versus Output Current http://onsemi.com 5 10 DTA114EM3T5G Series 1000 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − DTA124EM3T5G IC/IB = 10 1 25°C TA=−25°C 75°C 0.1 0.01 0 40 20 IC, COLLECTOR CURRENT (mA) TA=75°C 10 1 Figure 8. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 3 2 1 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) TA=−25°C 10 1 0.1 0.01 0.001 50 Figure 9. Output Capacitance 100 25°C 75°C f = 1 MHz lE = 0 V TA = 25°C V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 0 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 10 25°C 75°C 1 0 10 8 9 Figure 10. Output Current versus Input Voltage TA=−25°C 0.1 100 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC 0 25°C −25°C 100 10 50 VCE = 10 V 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current http://onsemi.com 6 10 DTA114EM3T5G Series 1 1000 IC/IB = 10 TA=−25°C 25°C 75°C 0.1 0.01 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − DTA144EM3T5G 0 10 20 30 IC, COLLECTOR CURRENT (mA) TA=75°C 25°C −25°C 100 10 40 1 10 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 IC, COLLECTOR CURRENT (mA) 0.6 0.4 0.2 0 0 −25°C 1 0.1 0.01 Figure 14. Output Capacitance VO = 5 V 1 0 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 25°C 75°C 1 0.1 0 10 8 9 Figure 15. Output Current versus Input Voltage 100 10 25°C TA=75°C 10 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 100 f = 1 MHz lE = 0 V TA = 25°C 0.8 100 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current http://onsemi.com 7 10 DTA114EM3T5G Series 1 180 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − DTA114YM3T5G TA=−25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 25°C 140 −25°C 120 100 80 60 40 20 0 80 TA=75°C VCE = 10 V 160 2 1 4 6 Figure 17. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) 3.5 Cob , CAPACITANCE (pF) TA=75°C f = 1 MHz lE = 0 V TA = 25°C 4 3 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 25°C −25°C 10 VO = 5 V 1 50 Figure 19. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 10 +12 V VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 8 Figure 20. Output Current versus Input Voltage 10 25°C 75°C TA=−25°C Typical Application for PNP BRTs 1 0.1 80 90 100 Figure 18. DC Current Gain 4.5 0 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) LOAD 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current Figure 22. Inexpensive, Unregulated Current Source http://onsemi.com 8 DTA114EM3T5G Series VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 0.1 75°C 25°C −25°C IC/IB = 10 0.01 0 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 7 hFE, DC CURRENT GAIN (NORMALIZED) TYPICAL ELECTRICAL CHARACTERISTICS — DTA115EM3T5G 1000 75°C TA = −25°C 100 25°C 10 VCE = 10 V 1 1 10 IC, COLLECTOR CURRENT (mA) Figure 23. Maximum Collector Voltage versus Collector Current Figure 24. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 1.0 f = 1 MHz IE = 0 V TA = 25°C 0.8 0.6 0.4 0.2 25°C 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 TA = −25°C 1 VO = 5 V 0 1 2 3 4 TA = −25°C 10 VO = 0.2 V 75°C 0 2 6 7 8 9 10 Figure 26. Output Current versus Input Voltage 100 1 5 Vin, INPUT VOLTAGE (VOLTS) Figure 25. Output Capacitance 25°C 75°C 10 0.1 0 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.2 0 100 4 6 8 10 12 14 16 IC, COLLECTOR CURRENT (mA) 18 Figure 27. Input Voltage versus Output Current http://onsemi.com 9 20 DTA114EM3T5G Series hFE, DC CURRENT GAIN (NORMALIZED) TYPICAL ELECTRICAL CHARACTERISTICS — DTA144WM3T5G VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 TA = −25°C 75°C 0.1 25°C IC/IB = 10 0.01 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 50 1000 75°C TA = −25°C 100 25°C VCE = 10 V 10 1 10 IC, COLLECTOR CURRENT (mA) Figure 28. Maximum Collector Voltage versus Collector Current Figure 29. DC Current Gain 100 1.2 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 1.0 0.8 0.6 0.4 0.2 75°C 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 60 TA = −25°C 10 25°C 1 0.1 0.01 0.001 0 VO = 5 V 0 1 2 3 4 VO = 0.2 V 1 TA = −25°C 75°C 25°C 0 6 7 8 9 10 11 Figure 31. Output Current versus Input Voltage 100 10 5 Vin, INPUT VOLTAGE (VOLTS) Figure 30. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.4 0 100 5 10 15 20 IC, COLLECTOR CURRENT (mA) 25 Figure 32. Input Voltage versus Output Current http://onsemi.com 10 DTA114EM3T5G Series PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D A b1 −Y− 3 E 1 e HE L 2 b 2X 0.08 (0.0032) X Y C STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR DIM A b b1 C D E e HE L MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.20 0.27 0.25 0.3 0.35 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 SOLDERING FOOTPRINT* 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 SCALE 20:1 mm inches SOT−723 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 11 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0079 0.0106 0.010 0.012 0.014 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 DTA114EM3T5G Series ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 12 For additional information, please contact your local Sales Representative. DTA114EM3/D