Rev.3.0_00
N-CHANNEL POWER MOS FET FOR SWITCHING
S-90N0332SUA
OD
UC
T
The S-90N0332SUA is an N-channel power MOS
FET that realizes a low on-state resistance and ultra
high-speed switching characteristics. It is suitable for
speeding up switching, enabling a high efficient set
and energy saving. A gate protection diode is built in
as a countermeasure for static electricity. Small
SOT-89-3 package realize high-density mounting.
This product can be driven directly by a 1.5 V power
source. If use this product in combination with SII
switching regulator products, you can get the highest
performance.
„ Features
„ Applications
• SOT-89-3
„ Item code
PR
: S-90N0332SUA-TF
: Taping only
DI
• Item code
• Delivery form
(Package drawing code: UP003-A)
SC
„ Packages
SOT-89-3
ON
TI
• Notebook PCs
• Cellular and portable phones
• On-board power supplies
1.5 V drive available
D
• Ultra high-speed switching
• Operational voltage:
• Built-in gate protection diode
• Small package:
RDS(on)1 = 0.09 Ω Max. (VGS = 4.5 V, ID = 1.5 A)
RDS(on)2 = 0.13 Ω Max. (VGS = 2.5 V, ID = 1.5 A)
RDS(on)3 = 0.3 Ω Max. (VGS = 1.5 V, ID = 0.5 A)
NU
E
• Low on-state resistance:
Seiko Instruments Inc.
1
N-CHANNEL POWER MOS FET FOR SWITCHING
S-90N0332SUA
Rev.3.0_00
„ Pin Configuration
Table 1
SOT-89-3
Top view
2
Symbol
G
D
S
Description
Gate pin
Drain pin
Source pin
UC
T
1
Pin No.
1
2
3
3
OD
Figure 1
„ Equivalent Circuit
Body
Diode
Caution The diode connected between the gate and source of the
transistor serves as a protector against electrostatic
discharge. Do not apply an electrostatic discharge to this
IC that exceeds the performance ratings of the built-in
gate protection diode.
And when this device actually used, an additional
protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this
device.
Gate
Protection
Diode
Figure 2
ON
TI
S (Source)
NU
E
D
G (Gate)
PR
D (Drain)
„ Absolute Maximum Ratings
(Ta = 25°C unless otherwise specified)
Conditions
Ratings
Unit
Symbol
DI
SC
Item
Drain to source voltage
(When between gate and source short circuits)
Gate to source voltage
(When between drain and source short circuits)
Drain current (DC)
Drain current (Pulse)
Reverse drain current
*1, *2
Power dissipation
Channel temperature
Storage temperature
Table 2
VDSS
VGS = 0 V
20
VGSS
VDS = 0 V
±8
ID
IDP
IDR
PD
Tch
Tstg
PW = 10 µs, Duty Cycle≤1%
3
9
3
2.5
150
−55 to +150
V
A
W
°C
Caution The absolute maximum ratings are rated values exceeding which the product could suffer
physical damage. These values must therefore not be exceeded under any conditions.
2
*1. Mounted on a ceramics board (1225 mm × 1 mm)
*2. The allowable power dissipation differs depending on the mounting form.
2
Seiko Instruments Inc.
N-CHANNEL POWER MOS FET FOR SWITCHING
S-90N0332SUA
Rev.3.0_00
„ Electrical Characteristics
DC characteristics
Table 3
Drain cut-off current
Gate to source leakage current
Gate to source cut-off voltage
*1
Drain to source on-state resistance
IDSS
IGSS
VGS(off)
RDS(on)1
RDS(on)2
RDS(on)3
|Yfs|
Vf
*1
Forward transfer admittance
Body drain diode forward voltage
(Ta = 25°C unless otherwise specified)
Min.
Typ.
Max.
Unit
VDS = 20 V, VGS = 0 V
10


µA
VGS = ±8 V, VDS = 0 V
±10


ID = 1 mA, VDS = 10 V
0.5
1.2
V

ID = 1.5 A, VGS = 4.5 V
0.07
0.09

Ω
ID = 1.5 A, VGS = 2.5 V
0.1
0.13

ID = 0.5 A, VGS = 1.5 V
0.17
0.3

ID = 1.5 A, VDS = 10 V
7.5
S


If = 3 A, VGS = 0 V
0.85
1.1
V

Conditions
UC
T
Symbol
*1. Effective during pulse test (600 µs).
Dynamic characteristics
Symbol
DI
SC
ON
TI
NU
E
Ciss
Coss
Crss
(Ta = 25°C unless otherwise specified)
Min.
Typ.
Max.
Conditions
Unit
VDS = 10 V, VGS = 0 V,
165
pF


f = 1 MHz
55


40


D
Item
Input capacitance
Output capacitance
Feedback capacitance
PR
Table 4
OD
Item
Seiko Instruments Inc.
3
N-CHANNEL POWER MOS FET FOR SWITCHING
S-90N0332SUA
Rev.3.0_00
Switching characteristics
Table 5
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tf
D.U.T.
PG.
RL
(Ta = 25°C unless otherwise specified)
Min.
Typ.
Max.
Unit
VGS = 5 V, ID = 1.5 A,
10
ns


VDD = 10 V
40


60


50


Conditions
90 %
VGS
Wave Form
0
10 %
VDD
VDS
Wave Form
VGS
VGS
90 %
10 %
PR
τ
td(on)
tr
td(off)
10 %
tf
D
τ = 10 µs
Duty Cycle ≤ 1 %
90 %
VDS
0
0
UC
T
Symbol
OD
Item
NU
E
Figure 3
Thermal characteristics
Table 6
Thermal resistance
(Channel to ambience)
„ Precautions
Symbol
ON
TI
Item
Rth(ch-a)
(Ta = 25°C unless otherwise specified)
Min.
Typ.
Max.
Unit
Conditions
Mounted on a ceramics board
2
(1225 mm × 1 mm)

50

°C/W
SC
• The application conditions for the input voltage, output voltage, and load current should not exceed the
allowable power dissipation after mounting.
DI
• SII claims no responsibility for any disputes arising out of or in connection with any infringement by
products including this IC of patents owned by a third party.
4
Seiko Instruments Inc.
N-CHANNEL POWER MOS FET FOR SWITCHING
S-90N0332SUA
Rev.3.0_00
„ Typical Characteristics
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
Pulse test (600 µs), Ta = 25°C
7
8
6
5
4
1.5 V
3
7
Drain Current ID [A]
Drain Current ID [A]
9
5.0 V, 4.5 V, 4.0 V, 3.5 V
3.0 V
2.5 V
VGS = 2.0 V
8
5
4
3
2
2
1
1
0
0
1.0
0.5
1.5
2.0
2.5
OD
1.0 V
0
0.5
1.0
0
ON
TI
0.05
2
VGS = 1.5 V
4
4.5 V
0.01
8
6
2.5 V
0.1
0
3
SC
Gate to Source Voltage VGS [V]
GATE TO SOURCE CUT-OFF VOLTAGE VARIANCE
vs. AMBIENT TEMPERATURE
VDS = 10 V, ID = 1 mA
0.1 A
0.20
ID = 3.0 A
0.15
1.5 A
VGS = 2.5 V
ID = 1.5 A, 3.0 A
VGS = 4.5 V
0
–50 –25
0
25
50
75
Gate to Source Cut-off Voltage Variance
VGS(off) Variance [V]
DI
Drain to Source On-State Resistance
RDS(on) [Ω]
ID = 0.5 A
VGS = 1.5 V
9
6
Drain Current ID [A]
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. AMBIENT TEMPERATURE
Pulse test (600 µs)
0.05
3.0
PR
D
Drain to Source On-State Resistance
RDS(on) [Ω]
3.0 A
ID = 1.5 A
0.10
2.5
2.0
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
Pulse test (600 µs), Ta = 25°C
NU
E
0.10
0.25
1.5
1
0.15
0.30
–55 °C
Gate to Source Voltage VGS [V]
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
Pulse test (600 µs), Ta = 25°C
0
125 °C
0
3.0
Drain to Source Voltage VDS [V]
Drain to Source On-State Resistance
RDS(on) [Ω]
25 °C
6
UC
T
9
DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE
Pulse test (600 µs), VDS = 10 V
0.2
0.1
0
–0.1
–0.2
–0.3
–0.4
100 125 150
Ambient Temperature Ta [°C]
–50
0
50
100
150
Ambient Temperature Ta [°C]
Seiko Instruments Inc.
5
N-CHANNEL POWER MOS FET FOR SWITCHING
S-90N0332SUA
Rev.3.0_00
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
SWITCHING TIME vs. DRAIN CURRENT
VGS = 5 V, VDD = 10 V, PW = 10 µs,
Duty Cycle≤1%, Ta = 25°C
VGS = 0 V, f = 1 MHz, Ta = 25°C
1000
Switching Time t [ns]
100
Coss
Crss
10
td(off)
tf
tr
td(on)
10
1
5
0
10
20
15
2
0
4
GATE TO SOURCE VOLTAGE vs. GATE CHARGE
VDS = 10 V, ID = 3 A, Ta = 25°C
10
REVERSE DRAIN CURRENT vs. SOURCE TO DRAIN VOLTAGE
Pulse test (600 µs), Ta = 25°C
5
NU
E
4
3
2
ON
TI
1
0
1
2
3
Reverse Drain Current IDR [A]
D
9
0
6
VGS = 4.5 V
4
2.5 V
3
0V
1.5 V
0
Gate Charge Qg [nC]
0
0.2
–4.5 V
0.6
0.4
SC
DI
Standardized Transition Thermal Resistance
1
Single Pulse
0.1
0.01
0.1
1
0.8
Source to Drain Voltage VSD [V]
STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-a) = 50°C/W, Ta = 25°C, Mounted on a ceramics board (1225 mm2 × 1 mm)
10
Pulse Width PW [s]
6
8
6
Drain Current ID [A]
PR
Drain to Source Voltage VDS [V]
Gate to Source Voltage VGS [V]
100
UC
T
Ciss
OD
Capacitance Ciss, Coss, Crss [pF]
1000
Seiko Instruments Inc.
100
1000
1.0
N-CHANNEL POWER MOS FET FOR SWITCHING
S-90N0332SUA
Rev.3.0_00
„ Marking Specification
SOT-23-3
Top view
3
(1)∼(3)
(4)
Product name vs. Product code
Product abbreviation
Product name
(1)
(2)
(3)
S-90N0113SMA-TF
O
N
A
S-90N0212SMA-TF
O
N
B
S-90N0312SMA-TF
O
N
C
3
5-Pin SON(A)
Top view
5
4
2
D
(1)∼(3)
: Product code (Refer to Product name vs. Product code)
Product name vs. Product code
Product abbreviation
Product name
(1)
(2)
(3)
S-90N0513SPN-TF
O
N
M
3
Remark The mark  shows the product indicated in this data sheet.
DI
1

SC
(1) (2) (3)
Product name vs. Product code
Product abbreviation
Product name
(1)
(2)
(3)
S-90N0133SUA-TF
O
N
G
S-90N0232SUA-TF
O
N
H
S-90N0332SUA-TF
O
N
I
S-90N0442SUA-TF
O
N
J
NU
E
2
: Product code (Refer to Product name vs. Product code)
: Lot number
ON
TI
1
(1)∼(3)
(4)∼(6)
(4) (5) (6)
(1) (2) (3)
SOT-89-3
Top view
PR
2
OD
UC
T
(1) (2) (3) (4)
1
: Product code (Refer to Product name vs. Product code)
: Lot number
Seiko Instruments Inc.
7
4.5±0.1
1.5±0.1
1
2
OD
UC
T
1.6±0.2
3
0.4±0.05
0.4±0.1
ON
TI
NU
E
D
PR
1.5±0.1 1.5±0.1
45°
0.4±0.1
DI
SC
0.45±0.1
No. UP003-A-P-SD-1.1
TITLE
SOT893-A-PKG Dimensions
No.
UP003-A-P-SD-1.1
SCALE
UNIT
mm
Seiko Instruments Inc.
4.0±0.1(10 pitches : 40.0±0.2)
+0.1
ø1.5 -0
ø1.5 +0.1
-0
OD
8.0±0.1
UC
T
2.0±0.05
0.3±0.05
2.0±0.1
PR
5° max.
Feed direction
DI
SC
ON
TI
NU
E
D
4.75±0.1
No. UP003-A-C-SD-1.1
TITLE
SOT893-A-Carrier Tape
No.
UP003-A-C-SD-1.1
SCALE
UNIT
mm
Seiko Instruments Inc.
D
PR
OD
UC
T
16.5max.
NU
E
13.0±0.3
ON
TI
Enlarged drawing in the central part
(60°)
No. UP003-A-R-SD-1.1
DI
SC
(60°)
SOT893-A-Reel
TITLE
No.
UP003-A-R-SD-1.1
SCALE
UNIT
QTY.
mm
Seiko Instruments Inc.
1,000
UC
T
OD
PR
D
NU
E
•
•
•
SC
ON
TI
•
The information described herein is subject to change without notice.
Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein
whose related industrial properties, patents, or other rights belong to third parties. The application circuit
examples explain typical applications of the products, and do not guarantee the success of any specific
mass-production design.
When the products described herein are regulated products subject to the Wassenaar Arrangement or other
agreements, they may not be exported without authorization from the appropriate governmental authority.
Use of the information described herein for other purposes and/or reproduction or copying without the
express permission of Seiko Instruments Inc. is strictly prohibited.
The products described herein cannot be used as part of any device or equipment affecting the human
body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus
installed in airplanes and other vehicles, without prior written permission of Seiko Instruments Inc.
Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the
failure or malfunction of semiconductor products may occur. The user of these products should therefore
give thorough consideration to safety design, including redundancy, fire-prevention measures, and
malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.
DI
•
•