DG2017
Vishay Siliconix
Low-Voltage, Low RON, Dual DPDT Analog Switch
DESCRIPTION
FEATURES
The DG2017 is a dual DPDT (double-pole/double-throw),
optimized for high performance analog switching, and
specifically designed to benefit portable audio applications.
One pair of double-throw switches is sub 1  for low
impedance speaker performance while the second pair of
double-throw switches is suitable for microphone
applications.
With the DPDT configuration, the DG2017 provides the
flexibility for stereo-single-end or differential BTL output
structures with a fully integrated differential microphone
switching solution.
The DG2017 is an integrated monolithic device in a QFN-16
(4 mm x 4 mm) package that provides a space saving
solution over the use of multiple single SPDT devices as well
as providing the advantage of on-resistance flatness and
matching that single SPDT devices cannot offer.
The DG2017 provides low charge injection (2 pC), fast
switching time (tON and tOFF less than 100 ns), excellent
Off-Isolation and Crosstalk (- 70 dB at 100 kHz). During
operation, continuous current through any or all switches is
rated at ± 200 mA, ideal for portable audio applications.
Built on Vishay Siliconix’s low voltage CMOS process, the
DG2017 contains an epitaxial layer that prevents latchup.
Break-before-make is guaranteed. When on, each switch
conducts equally well in both directions, and block up to the
power supply level when off.
• Low voltage operation (2 V to 5.5 V)
• Low on-resistance at 2.7 V - RON:
SW1, SW2 - 3.2 
SW3, SW4 - 0.64 
• Fast switching: tON = 46 ns
tOFF = 21 ns
• QFN-16 (4 mm x 4 mm) package
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
•
•
•
•
Space saving solution
Low power consumption
Guaranteed low voltage operation
Low voltage logic compatible
APPLICATIONS
• Cellular Phones
•
•
•
•
Integrated Speaker Switching
Audio and Video Signal Routing
PCMCIA Cards
Battery Operated Systems
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
QFN-16 (4 x 4)
COM1 NO1
16
15
V+
NC4
14
13
TRUTH TABLE
NC1
1
12
COM4
IN1, IN2
2
11
NO4
NO2
3
10
IN3, IN4
4
9
NC3
COM2
5
6
NC2
GND
7
Logic
NC1, 2, 3 and 4
NO1, 2, 3 and 4
0
ON
OFF
1
OFF
ON
ORDERING INFORMATION
Temp Range
- 40 °C to 85 °C
Package
16-pin QFN
(4 x 4 mm)
(Variation 1)
Part Number
DG2017DN-T1-E4
8
NO3 COM3
Top View
Document Number: 72228
S13-1286-Rev. C, 27-May-13
For technical questions, contact: pmostechsupport@vishay.com
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG2017
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Limit
Reference V+ to GND
Unit
- 0.3 to + 6
IN, COM, NC, NOa
V
- 0.3 to (V+ + 0.3)
Current (Any terminal except NO, NC or COM)
30
Continuous Current (NO, NC, or COM)
± 200
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
± 300
Storage Temperature (D Suffix)
mA
- 65 to 150
d
Package Solder Reflow Conditions
16-pin QFN (4 mm x 4 mm)
240
Power Dissipation (Packages)b
QFN-16 (4 mm x 4 mm)
1880
°C
mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 23.5 mW/°C above 70 °C.
d. Manual soldering with iron is not recommended for leadless components. The QFN is a leadless package. The end of the lead terminal is
exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
SPECIFICATIONS (V+ = 3 V)
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, VIN = 0.4 V or 1.6 Ve
Limits
- 40 °C to 85 °C
Temp.a
Min.b
Full
0
Typ.c
Max.b
Unit
V+
V
Analog Switch
Analog Signal Ranged
VNO, VNC
VCOM
DC Characteristics
On-Resistance
RON Flatnessd
RON Match
d
Switch Off
Leakage Current
Channel-On
Leakage Current
RON
V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 10 mA
(SW1, SW2)
Room
Full
3.2
3.7
4.3
RON
V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 100 mA
(SW3, SW4)
Room
Full
0.67
1.1
1.2
RON
V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 10 mA
(SW1, SW2)
Room
Full
1.4
2
RON
V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 100 mA
(SW3, SW4)
Room
Full
0.12
0.3
RON
V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 10 mA
(SW1, SW2)
Room
Full
0.3
RON
V+ = 2.7 V, VCOM = 0.2 V/1.5 V, INO, INC = 100 mA
(SW3, SW4)
Room
Full
0.3
INO(off)
INC(off)
ICOM(off)
ICOM(on)
V+ = 3.3 V
VNO, VNC = 0.3 V/3 V, VCOM = 0.3 V/3 V
V+ = 3.3 V, VNO = VNC, VCOM = 0.3 V/3 V

Room
Full
- 0.5
5
0.5
5
Room
Full
- 0.5
5
0.5
5
Room
Full
- 0.5
5
0.5
5
1.6
nA
Digital Control
Input High Voltage
VINH
Full
Input Low Voltage
VINL
Full
Input Capacitance
Cin
Input Current
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2
IINL or IINH
0.4
Full
VIN = 0 V or V+
For technical questions, contact: pmostechsupport@vishay.com
Full
6
-1
V
pF
1
µA
Document Number: 72228
S13-1286-Rev. C, 27-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG2017
Vishay Siliconix
SPECIFICATIONS (V+ = 3 V)
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 3 V, ± 10 %, VIN = 0.4 V or 1.6 Ve
Limits
- 40 °C to 85 °C
Temp.a
Min.b
Typ.c
Max.b
62
85
91
Unit
Dynamic Characteristics
Turn-On Time
Room
Full
tON
(SW3, SW4)
Room
Full
46
74
79
Room
Full
12
35
36
Room
Full
21
46
48
tON
(SW1, SW2)
Turn-Off Time
tON
(SW3, SW4)
Break-Before-Make Time
Charge Injection
tON
(SW1, SW2)
d
Off-Isolationd
Crosstalkd
NO, NC Off Capacitanced
Channel-On Capacitanced
VNO or VNC = 2 V, RL = 300 , CL = 35 pF
(fig. 1, 2)
ns
td
(SW1, SW2)
Full
5
45
td
(SW3, SW4)
Full
5
26
QINJ
(SW1, SW2)
QINJ
(SW3, SW4)
CL = 1 nF, VGEN = 0 V, RGEN = 0 
(fig. 3)
2
Room
pC
1
OIRR
(SW1, SW2)
OIRR
(SW3, SW4)
XTALK
(SW1, SW2)
- 68
RL = 50 , CL = 5 pF, f = 1 MHz
(fig. 4)
- 51
Room
dB
- 69
XTALK
(SW3, SW4)
- 51
COFF
(SW1, SW2)
12
COFF
(SW3, SW4)
CON
(SW1, SW2)
43
VIN = 0 V or V+, f = 1 MHz
Room
pF
86
CON
(SW3, SW4)
283
Power Supply
Power Supply Range
V+
2
5.5
V
VOE = 0 V or V+
1
µA
Power Supply Current
I+
Notes:
a. Room = 25 °C, full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
f. Guaranteed by 5 V leakage testing, not production tested.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 72228
S13-1286-Rev. C, 27-May-13
For technical questions, contact: pmostechsupport@vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG2017
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.600
6.00
T = 25 °C
SW1 & SW2
IS = 10 mA
R ON - On-Resistance (Ω)
V+ = 2.3 V
4.00
V+ = 2.7 V
V+ = 3.3 V
3.00
T = 25 °C
SW3 & SW4
1.400
R ON - On-Resistance (Ω)
5.00
2.00
V+ = 5.0 V
1.200
1.000
V+ = 2.3 V, IS = 50 mA
V+ = 2.7 V, IS = 100 mA
0.800
V+ = 3.3 V IS, = 100 mA
0.600
0.400
1.00
V+ = 5.0 V, IS = 100 mA
0.200
0.000
0.00
0
1
2
3
VCOM - Analog Voltage (V)
4
0
5
1
RON vs. VCOM and Single Supply Voltage
4
5
1.400
V+ = 2.7 V
V+ = 2.7 V
85 °C
25 °C
V+ = 5.0 V
85 °C
25 °C
- 40 °C
- 40 °C
4.00
3.00
2.00
V+ = 5.0 V
85 °C
1.200
R ON - On-Resistance (Ω)
5.00
R ON - On-Resistance (Ω)
3
RON vs. VCOM and Single Supply Voltage
6.00
85 °C
25 °C
25 °C
1.000
- 40 °C
- 40 °C
0.800
0.600
0.400
SW3 and SW4
SW1 and SW2
1.00
0.200
IS = 10 mA
IS = 100 mA
0.000
0.00
0
1
2
3
VCOM - Analog Voltage (V)
4
0
5
1
2
3
4
5
VCOM - Analog Voltage (V)
RON vs. Analog Voltage and Temperature
RON vs. Analog Voltage and Temperature
10 000
10 mA
I+ - Supply Current (A)
1 mA
I+ - Supply Current (nA)
2
VCOM - Analog Voltage (V)
1000
V+ = 5.0 V
VIN = 0 V
100
V+ = 3 V
100 µA
10 µA
1 µA
100 nA
10 nA
V+ = 3.0 V
VIN = 0 V
10
- 60
1 nA
100 nA
- 40
- 20
0
20
40
60
Temperature (°C)
Supply Current vs. Temperature
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4
80
100
10
100
1K
10 K
100 K
1M
10 M
Input Switching Frequency (Hz)
Supply Current vs. Input Switching Frequency
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 72228
S13-1286-Rev. C, 27-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG2017
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
800
1000
600
INO(off), INC(off)
Leakage Current (pA)
Leakage Current (pA)
V+ = 5.0 V
100
ICOM(on)
10
400
ICOM(on)
0
- 200
INO(off), INC(off)
- 400
1
- 60
- 40
- 20
0
20
40
60
80
100
- 800
0.0
2.5
3.0
100
t ON / t OFF - Switching Time (μs)
t ON / t OFF - Switching Time (μs)
2.0
Leakage vs. Analog Voltage
tON V+ = 2 V
80
tON V+ = 3 V
60
40
tON V+ = 5 V
20
tOFF V+ = 2 V
tOFF V+ = 3 V
- 20
0
20
40
Temperature (°C)
60
80
60
tON V+ = 3 V
40
tOFF V+ = 2 V
tON V+ = 5 V
20
tOFF V+ = 5 V
tOFF V+ = 3 V
tOFF V+ = 5 V
- 40
tON V+ = 2 V
80
0
- 60
100
- 40
- 20
0
20
40
60
80
100
Temperature (°C)
Switching Time vs. Temperature
Switching Time vs. Temperature
10
10
0
0
Loss
Loss
- 10
Loss, OIRR, X TALK (dB)
XTA LK
- 20
OIRR
- 30
- 40
- 50
DG2017
SW1 and SW2
V+ = 3 V
RL = 50 Ω
- 60
- 70
- 80
- 90
100 K
1.5
Leakage Current vs. Temperature
100
- 10
1.0
VCOM, V NO, V NC - Analog Voltage (V)
140
0
- 60
0.5
Temperature (°C)
160
120
V+ = 3 V
- 600
ICOM(off)
Loss, OIRR, X TALK (dB)
ICOM(off)
200
XTA LK
- 20
OIRR
- 30
- 40
- 50
DG2017
SW3 and SW4
V+ = 3 V
RL = 50 Ω
- 60
- 70
- 80
1M
10 M
Frequency (Hz)
100 M
Insertion Loss, Off-Isolation
Crosstalk vs. Frequency
Document Number: 72228
S13-1286-Rev. C, 27-May-13
1G
- 90
100 K
1M
10 M
Frequency (Hz)
100 M
1G
Insertion Loss, Off-Isolation,
Crosstalk vs. Frequency
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This document is subject to change without notice.
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DG2017
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
3.0
60
2.5
40
Q - Charge Injection (pC)
VT
- Switching Threshold (V)
V+ = 3 V
2.0
1.5
1.0
0.5
20
SW1 and SW2
0
- 20
SW3 and SW4
- 40
0.0
0
1
2
3
4
5
6
- 60
0.0
7
0.5
V+ - Supply Voltage (V)
1.0
1.5
2.0
2.5
3.0
VCOM - Analog Voltage (V)
Switching Threshold vs. Supply Voltage
Charge Injection vs. Analog Voltage
TEST CIRCUITS
V+
Logic
Input
V+
NO or NC
Switch
Input
50 %
tr < 5 ns
tf < 5 ns
VINL
Switch Output
COM
VINH
VOUT
0.9 x V OUT
IN
Logic
Input
RL
300 Ω
GND
Switch
Output
CL
35 pF
0V
tOFF
tON
0V
Logic "1" = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
CL (includes fixture and stray capacitance)
VOUT = VCOM
RL
R L + R ON
Figure 1. Switching Time
V+
Logic
Input
V+
NO
COM
VO
VNO
VNC
VINH
tr < 5 ns
tf < 5 ns
VINL
NC
RL
300 Ω
IN
GND
CL
35 pF
VNC = V NO
VO
90 %
Switch
0V
Output
tD
tD
CL (includes fixture and stray capacitance)
Figure 2. Break-Before-Make Interval
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Document Number: 72228
S13-1286-Rev. C, 27-May-13
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG2017
Vishay Siliconix
TEST CIRCUITS
V+
Rgen
ΔVOUT
V+
VOUT
NC or NO
COM
VOUT
+
IN
Vgen
IN
CL = 1 nF
VIN = 0 - V+
On
Off
On
GND
Q = ΔVOUT x CL
IN depends on switch configuration: input polarity
determined by sense of switch.
Figure 3. Charge Injection
V+
10 nF
V+
NC or NO
IN
COM
COM
RL
Analyzer
0V, 2.4 V
GND
VCOM
Off Isolation = 20 log V
NO/ NC
Figure 4. Off-Isolation
V+
10 nF
V+
COM
Meter
IN
0 V, 2.4 V
NC or NO
GND
HP4192A
Impedance
Analyzer
or Equivalent
f = 1 MHz
Figure 5. Channel Off/On Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72228.
Document Number: 72228
S13-1286-Rev. C, 27-May-13
For technical questions, contact: pmostechsupport@vishay.com
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Package Information
www.vishay.com
Vishay Siliconix
QFN 4x4-16L Case Outline
(5)
(4)
VARIATION 1
MILLIMETERS(1)
DIM
VARIATION 2
MILLIMETERS(1)
INCHES
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.75
0.85
0.95
0.029
0.033
0.037
0.75
0.85
0.95
0.029
0.033
0.037
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
0.35
0.010
0.014
0.25
0.35
0.010
2.2
0.079
0.087
2.5
2.7
0.098
A3
b
0.20 ref.
0.25
D
D2
0.30
0.008 ref.
4.00 BSC
2.0
2.1
0.012
0.20 ref.
0.157 BSC
0.083
0.30
4.00 BSC
2.6
e
0.65 BSC
0.026 BSC
0.65 BSC
E
4.00 BSC
0.157 BSC
4.00 BSC
E2
2.0
K
L
2.1
2.2
0.079
0.20 min.
0.5
0.6
0.083
0.087
2.5
0.008 min.
0.7
0.020
0.024
0.008 ref.
2.6
0.3
0.4
0.014
0.157 BSC
0.102
0.106
0.026 BSC
0.157 BSC
2.7
0.098
0.20 min.
0.028
0.012
0.102
0.106
0.008 min.
0.5
0.012
0.016
N(3)
16
16
16
16
Nd(3)
4
4
4
4
Ne(3)
4
4
4
4
0.020
Notes
(1) Use millimeters as the primary measurement.
(2) Dimensioning and tolerances conform to ASME Y14.5M. - 1994.
(3) N is the number of terminals. Nd and Ne is the number of terminals in each D and E site respectively.
(4) Dimensions b applies to plated terminal and is measured between 0.15 mm and 0.30 mm from terminal tip.
(5) The pin 1 identifier must be existed on the top surface of the package by using identification mark or other feature of package body.
(6) Package warpage max. 0.05 mm.
ECN: S13-0893-Rev. B, 22-Apr-13
DWG: 5890
Revision: 22-Apr-13
Document Number: 71921
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Revision: 13-Jun-16
1
Document Number: 91000