Isolator Quality and Reliability Report

Quality and Reliability Report Second Quarter 2016 Document ID: 16Q2_QR_Report.doc Note: All rights reserved. No part of this publication may be reproduced or transmitted without prior approval by Silicon Labs. This document is the property of Silicon Labs and shall be returned upon request. Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Table of Contents Quality and Reliability Report Overview ............................................................. 3 Average Outgoing Quality (AOQ)......................................................................... 4 Part Numbers by Fab Technology ....................................................................... 6 Failure Rate Estimation by Fab Technology ....................................................... 9 Flash Reliability Summary by Fab Technology ................................................ 46 Reliability Monitors ............................................................................................. 55 Revision History .................................................................................................. 72 All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 2/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Quality and Reliability Report Overview Silicon Labs is pleased to share this Quality and Reliability Report with our customers. It provides the latest quality performance data along with failure rate estimates and reliability monitor data. These data are collected on a continual basis as qualification, production and reliability monitors are completed. The report is published and updated quarterly to provide customers visibility to the most recent information. The Quality Trend charts on page 5 are shown on a rolling five-year basis. All other reports include data from the previous four quarters on a rolling, one-year basis. The report provides data covering: • Estimates of shipped product quality • Long-term operating life estimates • Mean time to failure estimates • Data retention life estimates • Reliability monitor results Silicon Labs is registered to ISO 9001:2008, ISO14001:2004 and maintained certification to ISO/TS 16949:2009 from January 2008 to January 2015. Due to a change in the ISO/TS 16949 certification eligibility requirements in 2013, fabless semiconductor companies are no longer eligible for certification. Silicon Labs will remain compliant to ISO/TS 16949 and continues to be audited to this standard during both internal and external annual audit cycles. Silicon Labs only uses ISO/TS 16949 certified suppliers. Silicon Labs is committed to quality excellence. That commitment is demonstrated by extensive product and process qualification. Each product undergoes extensive qualification testing prior to production release. Silicon Labs qualifies integrated circuit products using JEDEC JESD47, Stress-Test-Driven Qualification of Integrated Circuits or AEC-Q100, Stress Test Qualification for Integrated Circuits, as appropriate. Once a product is qualified, on-going product quality and reliability is verified through monitoring programs. Monitors are scheduled to periodically sample wafer fab technologies and package technologies. The results are published in this report. Any failures are used to drive corrective action and process and product improvement. We hope you find this report useful. Please let us know if you have any specific questions or suggestions. All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 3/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Average Outgoing Quality (AOQ) Overview Two elements of product quality are reported – electrical quality and mechanical/visual quality. We measure electrical quality by taking a sample (monitor) of production parts and retesting the sample to the datasheet limits (see Figure 1). The sample electrical test may be performed at an alternate test temperature to verify part performance across the datasheet temperature range. This sample method identifies defects introduced at the test process step or that have escaped the test process. Any failures drive corrective actions and product/process improvements. Visual/Mechanical quality is estimated by sample inspection of the completed product prior to final pack. Inspection items cover a broad range of characteristics and include mark, count, label, cover tape workmanship, moisture barrier bag integrity, lead location, part placement, and many other general workmanship items required for customer satisfaction and product protection during shipment. Any failures drive corrective actions and process improvements. Figure 1 – Quality Monitor Flow Order Fulfillment Assembly Test Electrical DPPM Scan FGI Ship Mechanical DPPM All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 4/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Electrical and Visual / Mechanical Outgoing Quality Graphs 16Q2 Sample size = 8,966,842 dppm = 2 16Q2 Sample size = 77,439,933 dppm = 0 All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 5/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Part Numbers by Fab Technology PN 5302X 5XX BCXX C8051F0XX C8051F1XX C8051F2XX C8051F30X C8051F31X C8051F32X C8051F33X C8051F34X C8051F35X C8051F36X C8051F37X C8051F37X C8051F38X C8051F39X C8051F4XX C8051F5XX C8051F7XX C8051F8XX C8051F9XX C8051TXXX CF0XX CF1XX CF2XX CF30X CF31X CF32X CF33X CF34X CF35X CF36X CF37X CF38X CF39X CF4XX CF5XX CF7XX CF8XX CF9XX CP2101 CP2102 CP2102N CP2103 CP2104 CP2105 CP2107 CP2108 CP2109 CP211X CP2120 CP213X CP22XX CP240X CP250X CP254X CP26XX CP3XXX CP4000 CPTXXXX CTXXX CY2277 CY2815 CY2831 Technology 55 nm 0.13 um 0.11 um 0.35 um, embedded flash 0.35 um, embedded flash 0.35 um, embedded flash 0.35 um, embedded flash 0.35 um, embedded flash 0.35 um, embedded flash 0.35 um, embedded flash 0.35 um, embedded flash 0.35 um, embedded flash 0.35 um, embedded flash 0.18 um, embedded flash 0.35 um, EEPROM 0.18 um, embedded flash 0.18 um, embedded flash 0.25 um, embedded flash 0.25 um, embedded flash 0.18 um, embedded flash 0.18 um, embedded flash 0.18 um, embedded flash 0.18 um, OTP 0.35 um, embedded flash 0.35 um, embedded flash 0.35 um, embedded flash 0.35 um, embedded flash 0.35 um, embedded flash 0.35 um, embedded flash 0.35 um, embedded flash 0.35 um, embedded flash 0.35 um, embedded flash 0.35 um, embedded flash 0.35 um, embedded flash 0.18 um, embedded flash 0.18 um, embedded flash 0.25 um, embedded flash 0.25 um, embedded flash 0.18 um, embedded flash 0.18 um, embedded flash 0.18 um, embedded flash 0.35 um, embedded flash 0.35 um, embedded flash 0.18 um, embedded flash 0.35 um, embedded flash 0.18 um, OTP 0.18 um, OTP 0.18 um, OTP 0.18 um, embedded flash 0.18 um, OTP 0.18 um, OTP 0.35 um, embedded flash 0.18 um, OTP 0.35 um, embedded flash 0.18 um 0.35 um, embedded flash 0.18 um, OTP 0.18 um, embedded flash 0.18 um, OTP 0.13 um 0.18 um, embedded flash 0.18 um, OTP 0.6 um - 1.0 um 0.6 um - 1.0 um 0.45 um - 0.5 um PN CY2832 CY2834 CY28353 CY28354 CY2840 CY2841 CY2844 CY2854 CY2855 CY2880 CY28SR CY2SST CY505Y CYI953 CYI983 CYWXXX EFM32X EFM8X EFR32BGX EFR32FGX EFR32MG1B1X EFR32MG1B2X EFR32MG1B6X EFR32MG1B6X EFR32MG1B7X EFR32MG1B7X EFR32MG1P1X EFR32MG1P2X EFR32MG1P6X EFR32MG1P6X EFR32MG1P7X EFR32MG1P7X EFR32MG1V1X EM25X EM26X EM31X EM31X EM34X EM35X EZR32X EZR32X IA10XX IA11XX IA12XX IA13XX IA14XX IA21XX IA32XX IA35XX IAP24X IAP32X IAP38X IAP4XX IAP5XX IAP6XX IAP7XX IAP86X IAP87X IAP90X IAP91X IAP93X S3CX S3UX Si100X Si100X Technology 0.45 um - 0.5 um 0.315 um - 0.35 um 0.315 um - 0.35 um 0.25 um 0.25 um 0.25 um 0.25 um 0.25 um 0.25 um 0.25 um 0.25 um 0.315 um - 0.35 um 0.25 um 0.315 um - 0.35 um 0.315 um - 0.35 um 0.45 um - 0.5 um 0.18 um, embedded flash 0.18 um, embedded flash 90 nm, embedded flash 90 nm, embedded flash 90 nm, embedded flash 90 nm, embedded flash 90 nm, embedded flash 90 nm, flash 90 nm, embedded flash 90 nm, flash 90 nm, embedded flash 90 nm, embedded flash 90 nm, embedded flash 90 nm, flash 90 nm, embedded flash 90 nm, flash 90 nm, embedded flash 0.18 um, embedded flash 0.18 um, embedded flash 0.11 um 0.18 um, embedded flash 0.18 um, embedded flash 0.18 um, embedded flash 0.11 um 0.18 um, embedded flash Diode 0.6 um - 0.8 um BiCMOS 0.6 um - 0.8 um BiCMOS 0.6 um - 0.8 um BiCMOS 0.6 um - 0.8 um BiCMOS 0.6 um - 0.8 um BiCMOS 0.6 um - 0.8 um BiCMOS 0.315 um - 0.35 um 0.6 um - 0.8 um BiCMOS 0.6 um - 0.8 um BiCMOS 0.6 um - 1.0 um 0.6 um - 0.8 um BiCMOS 0.6 um - 0.8 um BiCMOS 0.6 um - 1.0 um 0.6 um - 1.0 um 0.6 um - 0.8 um BiCMOS 0.315 um - 0.35 um 0.6 um - 1.0 um 0.6 um - 0.8 um BiCMOS 0.6 um - 1.0 um 0.18 um, embedded flash 0.18 um, embedded flash 0.18 um, embedded flash 0.18 um, RF PN Si101X Si101X Si102X Si102X Si103X Si103X Si106X Si106X Si108X Si108X Si1102 Si1102 Si1120 Si1120 Si1132 Si1133 Si114X Si115X Si210X Si2110 Si2111 Si2113 Si2115 Si2124 Si2127 Si2128 Si2136 Si2137 Si2138 Si2140 Si2141 Si2143 Si2144 Si2145 Si2146 Si2147 Si2148 Si2150 Si2151 Si2153 Si2155 Si2156 Si2157 Si2158 Si2159 Si2160-X Si2161-X Si2162-X Si2163-X Si2164-X Si2165-X Si2166-AXX Si2166-BXX Si2166-CXX Si2166-DXX Si2167-AXX Si2167-BXX Si2167-CXX Si2167-DXX Si2168-X Si2169-X Si216XX-X Si2170 Si2171 Si2172 Technology 0.18 um, embedded flash 0.18 um, RF 0.18 um, embedded flash 0.18 um, RF 0.18 um, embedded flash 0.18 um, RF 0.11 um 0.18 um, embedded flash 0.11 um 0.18 um, embedded flash 0.6 um - 0.8 um BiCMOS Diode 0.6 um - 0.8 um BiCMOS Diode 0.18 um, OTP 0.18 um 0.18 um, OTP 0.18 um 0.13 um 0.13 um 0.11 um 0.11 um 0.11 um 55 nm 55 nm 55 nm 0.11 um 55 nm 55 nm 0.11 um 55 nm 0.11 um 55 nm 0.11 um 0.11 um 55 nm 55 nm 55 nm 55 nm 0.11 um 0.11 um 0.11 um 55 nm 55 nm 55 nm 55 nm 0.11 um 55 nm 0.11 um 55 nm 0.11 um 0.11 um 55 nm 55 nm 55 nm 0.11 um 55 nm 55 nm 55 nm 55 nm 55 nm 55 nm 0.11 um 0.11 um 0.11 um All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 6/72 Quarterly Quality & Reliability Report PN Si2173 Si2176 Si2177 Si2178 Si2180 Si2181 Si2182 Si2183 Si2185 Si2190 Si2191 Si2196 Si220X Si221X Si2400 Si2401 Si2403 Si2404 Si2404-C Si2404-D Si2415-D Si2417-D Si2417-E Si241X-A Si241X-B Si241X-C Si241X-F Si241X-G Si241X-H Si242X Si2433 Si2434 Si2434-C Si2434-D Si2435-B Si2435-C Si2435-D Si2435-E Si2435-F Si2436 Si2437 Si2438 Si2439 Si2456 Si2457 Si2457-C Si2457-D Si2493 Si2493-C Si2493-D Si2494 Si2535 Si27XX Si3000 Si3005 Si3006 Si3007 Si3008 Si3009 Si3010 Si3011 Si3012 Si3014 Si3015 Si3016 Technology 0.11 um 0.11 um 55 nm 55 nm 55 nm 55 nm 55 nm 55 nm 0.11 um 55 nm 55 nm 0.11 um 0.315 um - 0.35 um 0.25 um 0.45 um - 0.5 um 0.18 um 0.18 um 0.18 um 0.18 um 0.11 um 0.11 um 0.18 um 0.11 um 0.18 um 0.18 um 0.18 um 0.18 um 0.18 um 0.18 um 0.18 um 0.18 um 0.18 um 0.18 um 0.11 um 0.18 um 0.18 um 0.18 um 0.11 um 0.11 um 0.18 um 0.18 um 0.18 um 0.11 um 0.18 um 0.18 um 0.18 um 0.11 um 0.18 um 0.18 um 0.11 um 0.11 um 0.25 um 0.11 um 0.45 um - 0.5 um 0.25 um 0.25 um 0.25 um 0.25 um 0.25 um 0.25 um 0.25 um 0.45 um - 0.5 um 0.45 um - 0.5 um 0.45 um - 0.5 um 0.45 um - 0.5 um PN Si3017 Si3018 Si3019 Si302X Si3050-D Si3050-E Si3052 Si3054 Si3056 Si306X Si307X Si308X Si31XX Si320X Si3210 Si3211 Si3215 Si3216 Si3217 Si3217X Si3217X Si3220 Si3225 Si3226 Si3226X Si3226X Si3227 Si3230 Si3232 Si3233 Si3238 Si3239X Si324X Si3291X Si340X Si3450 Si3452 Si3452 Si3453 Si3453 Si3454 Si3454 Si3455 Si3456 Si3456 Si3457 Si3457 Si3458 Si3458 Si3459 Si3459 Si346X Si348X Si35XX Si401X Si402X Si403X Si405X Si406X Si41XX Si4310 Si4311 Si4312 Si4313 Si432X Technology 0.25 um 0.25 um 0.25 um 0.45 um - 0.5 um 0.25 um 0.18 um 0.25 um 0.25 um 0.25 um 0.25 um 0.25 um 0.25 um 0.25 um High Voltage 0.45 um - 0.5 um 0.45 um - 0.5 um 0.45 um - 0.5 um 0.45 um - 0.5 um 0.18 um 0.18 um High Voltage 0.45 um - 0.5 um 0.45 um - 0.5 um 0.18 um 0.18 um High Voltage 0.18 um 0.45 um - 0.5 um 0.45 um - 0.5 um 0.45 um - 0.5 um High Voltage High Voltage 0.18 um 0.25 um High Voltage 0.18 um 0.18 um, OTP High Voltage 0.18 um, OTP High Voltage 0.18 um, OTP High Voltage High Voltage 0.35 um, embedded flash High Voltage 0.18 um, OTP High Voltage 0.18 um, OTP High Voltage 0.18 um, OTP High Voltage 0.18 um, OTP 0.35 um, embedded flash High Voltage 0.13 um 0.6 um - 0.8 um BiCMOS 0.18 um, RF 0.11 um 0.11 um 0.315 um - 0.35 um 0.13 um 0.13 um 0.13 um 0.18 um, RF 0.6 um - 0.8 um BiCMOS PN Si433X Si435X Si436X Si442X Si4430 Si4431 Si4432 Si4438 Si445X Si446X Si46XX Si4708 Si4709 Si470X-AXX Si470X-C19 Si471X-AXX Si472X-AXX Si4730-AXX Si4731-AXX Si4732-AXX Si474X Si475X Si476X Si477X Si4780 Si4780 Si479XX Si47XX-B1X Si47XX-B2X Si47XX-B3X Si47XX-C3X Si47XX-C4X Si47XX-D Si482X Si4830 Si4834 Si4836 Si483X-B Si484X Si49XX Si500 Si5010 Si50122 Si50122 Si5013 Si502X Si504X Si510X Si511X Si512X Si5211X Si5213X Si5214X Si5216X Si53019 Si5301C Si5306 Si5310 Si53102 Si53106 Si53108 Si5311X Si5315 Si5315X Si5316 16Q2_QR_Report-01 Technology 0.18 um, RF 0.11 um 0.11 um 0.6 um - 0.8 um BiCMOS 0.18 um, RF 0.18 um, RF 0.18 um, RF 0.11 um 0.11 um 0.11 um 55 nm 0.11 um 0.11 um 0.13 um 0.11 um 0.13 um 0.13 um 0.13 um 0.13 um 0.11 um 0.13 um 0.11 um 0.11 um 0.11 um 0.13 um 0.35 um, embedded flash 55 nm 0.13 um 0.13 um 0.13 um 0.13 um 0.13 um 0.11 um 0.11 um 0.13 um 0.13 um 0.11 um 0.11 um 0.11 um 0.6 um - 0.8 um BiCMOS 0.13 um 0.25 um 0.13 um 0.18 um 0.25 um 0.25 um 0.13 um 0.15 um 0.15 um 0.18 um 0.18 um 0.18 um, RF 0.18 um, RF 0.18 um, RF 0.18 um, RF 0.13 um 0.13 um 0.25 um 0.18 um 0.18 um, RF 0.18 um, RF 0.18 um, RF 0.13 um 0.18 um, RF 0.13 um All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 7/72 Quarterly Quality & Reliability Report PN Si5317 Si5319 Si5320 Si5321 Si5322 Si5323 Si5324 Si5325 Si5326 Si5327 Si5328 Si5330X Si5331X Si5332X Si5334X Si5335X Si5336X Si5338X Si5339X Si5339X Si534X Si535X Si5364 Si5365 Si5366 Si5367 Si5368 Si5369 Si537X Si538X Si5409X Si7005 Si7006 Si7007 Si7008 Si701X Si702X Si703X Si705X Si803X Si804X Si805X Si806X Si822X Si822X Si823X Si823X Si824X Si824X Si825X Si826X Si826X SI8271-D-YDI Si827X Si827X Si83XX Si84XX Si850X Si851X Si854X Si86XX Si87XX Si87XX Si88XX Si890X Technology 0.13 um 0.13 um 0.25 um 0.25 um 0.13 um 0.13 um 0.13 um 0.13 um 0.13 um 0.13 um 0.13 um 0.13 um 0.13 um 0.13 um 0.13 um 0.13 um 0.13 um 0.13 um 0.18 um, embedded flash 55 nm 55 nm 0.13 um 0.25 um 0.13 um 0.13 um 0.13 um 0.13 um 0.13 um 0.13 um 55 nm 0.18 um, OTP 0.18 um, RF 0.18 um, embedded flash 0.18 um, embedded flash 0.18 um, embedded flash 0.18 um, embedded flash 0.18 um, embedded flash 0.18 um, OTP 0.18 um, embedded flash 0.25 um 0.25 um 0.25 um 0.25 um 0.25 um High Voltage 0.25 um High Voltage 0.25 um High Voltage 0.25 um, embedded flash 0.25 um High Voltage 0.25 um 0.25 um High Voltage 0.25 um 0.25 um 0.315 um - 0.35 um 0.315 um - 0.35 um 0.6 um - 1.0 um 0.25 um 0.25 um High Voltage 0.25 um 0.18 um, OTP PN Si890X Si892X SiM3XXXX SL151 SL15100CZC-1 SL153 SL15300DZC-56 SL15300EZC-70 SL15300EZC-75 SL158 SL16XX SL188X SL2304 SL2305 SL2309 SL23EP SL281XX SL2850 SL2854 SL2861 SL2864 SL2874 SL28770 SL28773 SL28774 SL28775 SL28776 SL28779 SL28DB SL28EB636 SL28EB717 SL28EB719 SL28EB720 SL28EB721 SL28EB725 SL28EB731 SL28EB735 SL28EB740 SL28EB742 SL28EB745 SL28EB774 SL28EB781 SL28EB797 SL28PCIE06 SL28PCIE10 SL28PCIE14 SL28PCIE16 SL28PCIE19 SL28PCIE2 SL28PCIE30 SL28PCIE50 SL28SR SL3800 SL38020 SL3816 SL38160CZC-30B TS1001 TS1002 TS1003 TS1004 TS1005 TS11XX TS12XX TS3001 TS3002 Technology 0.25 um 0.25 um 0.18 um, embedded flash 0.18 um, RF 0.35 um, EEPROM 0.18 um, RF 0.35 um, EEPROM 0.35 um, EEPROM 0.35 um, EEPROM 0.18 um, RF 0.18 um, RF 0.18 um, RF 0.18 um, RF 0.18 um, RF 0.18 um, RF 0.18 um, RF 0.18 um 0.25 um 0.25 um 0.18 um, RF 0.25 um 0.18 um 0.18 um 0.18 um 0.18 um 0.18 um, RF 0.18 um, RF 0.18 um 0.25 um 0.18 um 0.18 um 0.18 um 0.18 um 0.18 um 0.18 um, RF 0.18 um, RF 0.18 um, RF 0.18 um 0.18 um 0.18 um 0.18 um 0.18 um, RF 0.18 um, RF 0.18 um 0.18 um 0.18 um, RF 0.18 um 0.18 um, RF 0.18 um 0.18 um 0.18 um, RF 0.18 um 0.18 um, RF 0.18 um, OTP 0.18 um, RF 0.35 um, EEPROM High Voltage High Voltage 0.18 um, OTP High Voltage 0.18 um, OTP 0.6 um - 1.0 um High Voltage 0.18 um 0.18 um PN TS3003 TS3004 TS3005 TS3006 TS3300 TS3310 TS3312 TS3314 TS4XXX TS6XXX TS7XXX TS9XXX TSAXXXX TSM12XX TSM60XX TSM91XX TSM92XX TSM93XX TSM96XX TSM97XX TSM98XX TSM99XX W1XXX W4XXX 16Q2_QR_Report-01 Technology High Voltage High Voltage High Voltage High Voltage High Voltage 0.18 um, OTP 0.18 um, OTP 0.18 um, OTP High Voltage 0.6 um - 1.0 um 0.18 um 0.18 um 0.18 um 0.18 um 0.6 um - 1.0 um 0.18 um 0.18 um 0.18 um 0.6 um - 1.0 um 0.18 um 0.18 um 0.6 um - 1.0 um 0.45 um - 0.5 um 0.45 um - 0.5 um All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 8/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Failure Rate Estimation by Fab Technology Failure in Time (FIT) A long-term, steady-state failure rate is often required by circuit and system engineers for allocations of the failure rates at the component level during system design. FIT, which stands for failure-in-time, is a widely used term to describe failure rates of electronic components, and as used here, represents the number of failures in a billion hours of operation. FIT rates are reported in the following section as curves and in tables for specific temperatures and assumptions. Mean Time to Failure (MTTF) Another way to express failure rates is by mean time to failure (MTTF). MTTF is the inverse of the FIT rate and is useful for repair and maintenance planning. This relationship can be seen by examining the units of each measure: MTTF is given in time/failure; FIT is given in failure/time. MTTF is reported in the tables following the FIT rate curves for each specific fab technology. Failure Rate Calculation Method Long-term failure rates are estimated by applying the Arrhenius equation to data collected from long term operating life tests. A confidence factor is applied based upon the sample size and number of failures to estimate the maximum failure rate at a specific confidence level. The calculation details are provided in the table below each of the following FIT rate curves. All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 9/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 FIT Rate Curves and Data Process – 55 nm All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 10/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Reliability FIT Calculations for temperature acceleration Single Point Calculation for 55 nm Variables: 90% 60% Confidence Level Tja [C] 50 50 Junction Temperature at operating condition Tsa [C] 125 125 Ambient Temperature at stress Tjs [C] 140 140 Junction Temperature at stress (assume 15C rise) Ea 0.7 0.7 Energy Activation D 1436 1436 Equivalent Devices stressed (Assuming 1000hrs per device) H 1000 1000 Number of hours on stress F 1 1 Number of failures P 0.1 0.4 Confidence Level [.1 = 90%; .4 = 60%] Constants: k 8.61E-05 8.61E-05 Boltzman's constant [eV/K] Calculated Values: Af 239.4 v 4.0 DH 1435550 X2 7.8 FIT 11.3 239.4 4.0 1435550 4.0 5.9 MTTF MTTF 1.7E+08 19397.3 8.8E+07 10084.9 Acceleration Factor: [exp(Ea/k*(1/(Tja + 273.15) - (1/(Tjs + 273.15))] degrees of freedom [2(F+1)] Total device hours D*H Chi-Square Distribution Value Failures in time [failures / 1xE9 hours] =[X2/(2*AF*D*H)*1E9] Mean Time To Failure [hours] (Note: MTTF is 1/FIT) Mean Time To Failure [years] (Note: MTTF is 1/FIT) FIT Estimation Curves for 55 nm Tja 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 Af 1971.6 1257.7 814.1 534.4 355.4 239.4 163.2 112.5 78.5 55.3 39.3 28.3 20.5 15.0 11.1 8.2 6.2 4.7 3.5 2.7 FIT (90%) 1.4 2.2 3.3 5.1 7.6 11.3 16.6 24.1 34.5 49.0 68.9 95.8 132.2 180.6 244.8 329.0 438.8 580.8 763.3 996.2 FIT (60%) 0.7 1.1 1.7 2.6 4.0 5.9 8.6 12.5 18.0 25.5 35.8 49.8 68.7 93.9 127.3 171.1 228.1 302.0 396.9 517.9 MTTF MTTF 90% (yrs) 60% (yrs) 83066 159770 52990 101920 34300 65972 22513 43301 14973 28799 10085 19397 6875 13223 4741 9118 3305 6357 2329 4479 1657 3188 1191 2291 864 1661 632 1216 466 897 347 667 260 500 197 378 150 288 115 220 All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 11/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Process – 90 nm w/ embedded flash All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 12/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Reliability FIT Calculations for temperature acceleration Single Point Calculation for 90 nm w/ embedded flash Variables: 90% 60% Confidence Level Tja [C] 50 50 Junction Temperature at operating condition Tsa [C] 125 125 Ambient Temperature at stress Tjs [C] 140 140 Junction Temperature at stress (assume 15C rise) Ea 0.7 0.7 Energy Activation D 461 461 Equivalent Devices stressed (Assuming 1000hrs per device) H 1000 1000 Number of hours on stress F 1 1 Number of failures P 0.1 0.4 Confidence Level [.1 = 90%; .4 = 60%] Constants: k 8.61E-05 Calculated Values: Af 239.4 v 4.0 DH 461408 X2 7.8 FIT 35.2 MTTF MTTF 2.8E+07 3241.4 8.61E-05 Boltzman's constant [eV/K] 239.4 4.0 461408 4.0 18.3 5.5E+07 6234.6 Acceleration Factor: [exp(Ea/k*(1/(Tja + 273.15) - (1/(Tjs + 273.15))] degrees of freedom [2(F+1)] Total device hours D*H Chi-Square Distribution Value Failures in time [failures / 1xE9 hours] =[X2/(2*AF*D*H)*1E9] Mean Time To Failure [hours] (Note: MTTF is 1/FIT) Mean Time To Failure [years] (Note: MTTF is 1/FIT) FIT Estimation Curves for 90 nm w/ embedded flash MTTF MTTF Tja Af FIT (90%) FIT (60%) 90% (yrs) 60% (yrs) 25 1971.6 4.3 2.2 26699 51352 30 1257.7 6.7 3.5 17032 32759 35 814.1 10.4 5.4 11024 21205 40 534.4 15.8 8.2 7236 13918 45 355.4 23.7 12.3 4813 9256 50 239.4 35.2 18.3 3241 6235 55 163.2 51.7 26.9 2210 4250 60 112.5 74.9 38.9 1524 2931 65 78.5 107.5 55.9 1062 2043 70 55.3 152.5 79.3 749 1440 75 39.3 214.3 111.4 533 1025 80 28.3 298.2 155.0 383 736 85 20.5 411.2 213.8 278 534 90 15.0 562.0 292.2 203 391 95 11.1 761.5 395.9 150 288 100 8.2 1023.6 532.2 112 214 105 6.2 1365.2 709.8 84 161 110 4.7 1807.1 939.6 63 121 115 3.5 2374.9 1234.7 48 92 120 2.7 3099.4 1611.4 37 71 All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 13/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Process - 0.11 micron Failure Rate as a Function of Junction Temperature Estimated upper bound at two confidence levels 140.0 120.0 100.0 FIT Rate 80.0 FIT (90%) 60.0 FIT (60%) 40.0 20.0 0.0 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 Junction Temperature [C] All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 14/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Reliability FIT Calculations for temperature acceleration Single Point Calculation for 0.11 micron Variables: 90% 60% Confidence Level Tja [C] 50 50 Junction Temperature at operating condition Tsa [C] 125 125 Ambient Temperature at stress Tjs [C] 140 140 Junction Temperature at stress (assume 15C rise) Ea 0.7 0.7 Energy Activation D 6513 6513 Equivalent Devices stressed (Assuming 1000hrs per device) H 1000 1000 Number of hours on stress F 0 0 Number of failures P 0.1 0.4 Confidence Level [.1 = 90%; .4 = 60%] Constants: k 8.61E-05 Calculated Values: Af 239.4 v 2.0 DH 6512504 X2 4.6 FIT 1.5 MTTF MTTF 6.8E+08 77286.4 8.61E-05 Boltzman's constant [eV/K] 239.4 2.0 6512504 1.8 0.6 Acceleration Factor: [exp(Ea/k*(1/(Tja + 273.15) - (1/(Tjs + 273.15))] degrees of freedom [2(F+1)] Total device hours D*H Chi-Square Distribution Value Failures in time [failures / 1xE9 hours] =[X2/(2*AF*D*H)*1E9] 1.7E+09 Mean Time To Failure [hours] (Note: MTTF is 1/FIT) 194216.1 Mean Time To Failure [years] (Note: MTTF is 1/FIT) FIT Estimation Curves for 0.11 micron Tja 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 Af 1971.6 1257.7 814.1 534.4 355.4 239.4 163.2 112.5 78.5 55.3 39.3 28.3 20.5 15.0 11.1 8.2 6.2 4.7 3.5 2.7 FIT (90%) 0.2 0.3 0.4 0.7 1.0 1.5 2.2 3.1 4.5 6.4 9.0 12.5 17.2 23.6 31.9 42.9 57.3 75.8 99.6 130.0 FIT (60%) 0.1 0.1 0.2 0.3 0.4 0.6 0.9 1.3 1.8 2.5 3.6 5.0 6.9 9.4 12.7 17.1 22.8 30.2 39.6 51.7 MTTF MTTF 90% (yrs) 60% (yrs) 636585 1599700 406090 1020481 262860 660551 172527 433551 114747 288352 77286 194216 52686 132397 36332 91299 25331 63654 17847 44849 12702 31919 9127 22936 6620 16635 4843 12171 3574 8981 2659 6682 1994 5010 1506 3785 1146 2880 878 2207 All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 15/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Process - 0.13 micron All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 16/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Reliability FIT Calculations for temperature acceleration Single Point Calculation for 0.13 micron Variables: 90% 60% Confidence Level Tja [C] 50 50 Junction Temperature at operating condition Tsa [C] 125 125 Ambient Temperature at stress Tjs [C] 140 140 Junction Temperature at stress (assume 15C rise) Ea 0.7 0.7 Energy Activation D 6965 6965 Equivalent Devices stressed (Assuming 1000hrs per device) H 1000 1000 Number of hours on stress F 1 1 Number of failures P 0.1 0.4 Confidence Level [.1 = 90%; .4 = 60%] Constants: k 8.61E-05 8.61E-05 Boltzman's constant [eV/K] Calculated Values: Af 239.4 v 4.0 DH 6964970 X2 7.8 FIT 2.3 239.4 4.0 6964970 4.0 1.2 MTTF MTTF 8.2E+08 94111.2 4.3E+08 48929.6 Acceleration Factor: [exp(Ea/k*(1/(Tja + 273.15) - (1/(Tjs + 273.15))] degrees of freedom [2(F+1)] Total device hours D*H Chi-Square Distribution Value Failures in time [failures / 1xE9 hours] =[X2/(2*AF*D*H)*1E9] Mean Time To Failure [hours] (Note: MTTF is 1/FIT) Mean Time To Failure [years] (Note: MTTF is 1/FIT) FIT Estimation Curves for 0.13 micron Tja 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 Af 1971.6 1257.7 814.1 534.4 355.4 239.4 163.2 112.5 78.5 55.3 39.3 28.3 20.5 15.0 11.1 8.2 6.2 4.7 3.5 2.7 FIT (90%) 0.3 0.4 0.7 1.0 1.6 2.3 3.4 5.0 7.1 10.1 14.2 19.8 27.2 37.2 50.5 67.8 90.4 119.7 157.3 205.3 FIT (60%) 0.1 0.2 0.4 0.5 0.8 1.2 1.8 2.6 3.7 5.3 7.4 10.3 14.2 19.4 26.2 35.3 47.0 62.2 81.8 106.8 MTTF MTTF 90% (yrs) 60% (yrs) 403018 775166 257093 494494 166415 320083 109226 210086 72645 139726 48930 94111 33355 64156 23001 44241 16037 30845 11299 21733 8041 15467 5778 11114 4191 8061 3066 5898 2263 4352 1683 3238 1262 2428 954 1834 726 1396 556 1069 All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 17/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Process - 0.15 micron All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 18/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Reliability FIT Calculations for temperature acceleration Single Point Calculation for 0.15 micron Variables: 90% 60% Confidence Level Tja [C] 50 50 Junction Temperature at operating condition Tsa [C] 125 125 Ambient Temperature at stress Tjs [C] 140 140 Junction Temperature at stress (assume 15C rise) Ea 0.7 0.7 Energy Activation D 104 104 Equivalent Devices stressed (Assuming 1000hrs per device) H 1000 1000 Number of hours on stress F 0 0 Number of failures P 0.1 0.4 Confidence Level [.1 = 90%; .4 = 60%] Constants: k 8.61E-05 Calculated Values: Af 239.4 v 2.0 DH 104144 X2 4.6 FIT 92.4 MTTF MTTF 1.1E+07 1235.9 8.61E-05 Boltzman's constant [eV/K] 239.4 2.0 104144 1.8 36.8 2.7E+07 3105.8 Acceleration Factor: [exp(Ea/k*(1/(Tja + 273.15) - (1/(Tjs + 273.15))] degrees of freedom [2(F+1)] Total device hours D*H Chi-Square Distribution Value Failures in time [failures / 1xE9 hours] =[X2/(2*AF*D*H)*1E9] Mean Time To Failure [hours] (Note: MTTF is 1/FIT) Mean Time To Failure [years] (Note: MTTF is 1/FIT) FIT Estimation Curves for 0.15 micron Tja 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 Af 1971.6 1257.7 814.1 534.4 355.4 239.4 163.2 112.5 78.5 55.3 39.3 28.3 20.5 15.0 11.1 8.2 6.2 4.7 3.5 2.7 FIT (90%) 11.2 17.6 27.2 41.4 62.2 92.4 135.5 196.5 281.8 400.0 562.0 782.1 1078.4 1473.9 1997.3 2684.7 3580.6 4739.6 6228.7 8128.9 FIT (60%) 4.5 7.0 10.8 16.5 24.8 36.8 53.9 78.2 112.1 159.2 223.6 311.2 429.1 586.5 794.8 1068.4 1424.8 1886.1 2478.6 3234.8 MTTF MTTF 90% (yrs) 60% (yrs) 10180 25581 6494 16319 4203 10563 2759 6933 1835 4611 1236 3106 843 2117 581 1460 405 1018 285 717 203 510 146 367 106 266 77 195 57 144 43 107 32 80 24 61 18 46 14 35 All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 19/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Process - 0.18 micron All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 20/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Reliability FIT Calculations for temperature acceleration Single Point Calculation for 0.18 micron Variables: 90% 60% Confidence Level Tja [C] 50 50 Junction Temperature at operating condition Tsa [C] 125 125 Ambient Temperature at stress Tjs [C] 140 140 Junction Temperature at stress (assume 15C rise) Ea 0.7 0.7 Energy Activation D 14308 14308 Equivalent Devices stressed (Assuming 1000hrs per device) H 1000 1000 Number of hours on stress F 0 0 Number of failures P 0.1 0.4 Confidence Level [.1 = 90%; .4 = 60%] Constants: k 8.61E-05 Calculated Values: Af 239.4 v 2.0 DH 14307904 X2 4.6 FIT 0.7 MTTF MTTF 1.5E+09 169797.4 8.61E-05 Boltzman's constant [eV/K] 239.4 2.0 14307904 1.8 0.3 Acceleration Factor: [exp(Ea/k*(1/(Tja + 273.15) - (1/(Tjs + 273.15))] degrees of freedom [2(F+1)] Total device hours D*H Chi-Square Distribution Value Failures in time [failures / 1xE9 hours] =[X2/(2*AF*D*H)*1E9] 3.7E+09 Mean Time To Failure [hours] (Note: MTTF is 1/FIT) 426690.8 Mean Time To Failure [years] (Note: MTTF is 1/FIT) FIT Estimation Curves for 0.18 micron Tja 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 Af 1971.6 1257.7 814.1 534.4 355.4 239.4 163.2 112.5 78.5 55.3 39.3 28.3 20.5 15.0 11.1 8.2 6.2 4.7 3.5 2.7 FIT (90%) 0.1 0.1 0.2 0.3 0.5 0.7 1.0 1.4 2.1 2.9 4.1 5.7 7.8 10.7 14.5 19.5 26.1 34.5 45.3 59.2 FIT (60%) 0.0 0.1 0.1 0.1 0.2 0.3 0.4 0.6 0.8 1.2 1.6 2.3 3.1 4.3 5.8 7.8 10.4 13.7 18.0 23.5 MTTF MTTF 90% (yrs) 60% (yrs) 1398570 3514525 892176 2241986 577500 1451225 379041 952508 252097 633506 169797 426691 115751 290875 79820 200583 55651 139848 39210 98533 27906 70126 20053 50391 14543 36546 10641 26740 7852 19732 5842 14680 4380 11007 3309 8315 2518 6327 1929 4848 All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 21/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Process - 0.18 micron w/ embedded flash All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 22/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Reliability FIT Calculations for temperature acceleration Single Point Calculation for 0.18 micron w/ embedded flash Variables: 90% 60% Confidence Level Tja [C] 50 50 Junction Temperature at operating condition Tsa [C] 125 125 Ambient Temperature at stress Tjs [C] 140 140 Junction Temperature at stress (assume 15C rise) Ea 0.7 0.7 Energy Activation D 5565 5565 Equivalent Devices stressed (Assuming 1000hrs per device) H 1000 1000 Number of hours on stress F 0 0 Number of failures P 0.1 0.4 Confidence Level [.1 = 90%; .4 = 60%] Constants: k 8.61E-05 Calculated Values: Af 239.4 v 2.0 DH 5564561 X2 4.6 FIT 1.7 MTTF MTTF 5.8E+08 66036.8 8.61E-05 Boltzman's constant [eV/K] 239.4 2.0 5564561 1.8 0.7 Acceleration Factor: [exp(Ea/k*(1/(Tja + 273.15) - (1/(Tjs + 273.15))] degrees of freedom [2(F+1)] Total device hours D*H Chi-Square Distribution Value Failures in time [failures / 1xE9 hours] =[X2/(2*AF*D*H)*1E9] 1.5E+09 Mean Time To Failure [hours] (Note: MTTF is 1/FIT) 165946.5 Mean Time To Failure [years] (Note: MTTF is 1/FIT) FIT Estimation Curves for 0.18 micron w/ embedded flash MTTF MTTF Tja Af FIT (90%) FIT (60%) 90% (yrs) 60% (yrs) 25 1971.6 0.2 0.1 543925 1366852 30 1257.7 0.3 0.1 346981 871942 35 814.1 0.5 0.2 224599 564403 40 534.4 0.8 0.3 147415 370445 45 355.4 1.2 0.5 98044 246380 50 239.4 1.7 0.7 66037 165947 55 163.2 2.5 1.0 45017 113126 60 112.5 3.7 1.5 31043 78010 65 78.5 5.3 2.1 21644 54389 70 55.3 7.5 3.0 15249 38321 75 39.3 10.5 4.2 10853 27273 80 28.3 14.6 5.8 7799 19598 85 20.5 20.2 8.0 5656 14213 90 15.0 27.6 11.0 4138 10400 95 11.1 37.4 14.9 3054 7674 100 8.2 50.2 20.0 2272 5709 105 6.2 67.0 26.7 1703 4281 110 4.7 88.7 35.3 1287 3234 115 3.5 116.6 46.4 979 2461 120 2.7 152.1 60.5 750 1886 All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 23/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Process - 0.18 micron w/ OTP All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 24/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Reliability FIT Calculations for temperature acceleration Single Point Calculation for 0.18 micron w/ OTP Variables: 90% 60% Confidence Level Tja [C] 50 50 Junction Temperature at operating condition Tsa [C] 125 125 Ambient Temperature at stress Tjs [C] 140 140 Junction Temperature at stress (assume 15C rise) Ea 0.7 0.7 Energy Activation D 3467 3467 Equivalent Devices stressed (Assuming 1000hrs per device) H 1000 1000 Number of hours on stress F 0 0 Number of failures P 0.1 0.4 Confidence Level [.1 = 90%; .4 = 60%] Constants: k 8.61E-05 Calculated Values: Af 239.4 v 2.0 DH 3466592 X2 4.6 FIT 2.8 MTTF MTTF 3.6E+08 41139.4 8.61E-05 Boltzman's constant [eV/K] 239.4 2.0 3466592 1.8 1.1 Acceleration Factor: [exp(Ea/k*(1/(Tja + 273.15) - (1/(Tjs + 273.15))] degrees of freedom [2(F+1)] Total device hours D*H Chi-Square Distribution Value Failures in time [failures / 1xE9 hours] =[X2/(2*AF*D*H)*1E9] 9.1E+08 Mean Time To Failure [hours] (Note: MTTF is 1/FIT) 103380.8 Mean Time To Failure [years] (Note: MTTF is 1/FIT) FIT Estimation Curves for 0.18 micron w/ OTP Tja 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 Af 1971.6 1257.7 814.1 534.4 355.4 239.4 163.2 112.5 78.5 55.3 39.3 28.3 20.5 15.0 11.1 8.2 6.2 4.7 3.5 2.7 FIT (90%) 0.3 0.5 0.8 1.2 1.9 2.8 4.1 5.9 8.5 12.0 16.9 23.5 32.4 44.3 60.0 80.7 107.6 142.4 187.1 244.2 FIT (60%) 0.1 0.2 0.3 0.5 0.7 1.1 1.6 2.3 3.4 4.8 6.7 9.4 12.9 17.6 23.9 32.1 42.8 56.7 74.5 97.2 MTTF MTTF 90% (yrs) 60% (yrs) 338853 851517 216161 543200 139920 351610 91836 230779 61079 153489 41139 103381 28045 70475 19339 48598 13483 33883 9500 23873 6761 16990 4858 12209 3524 8855 2578 6479 1902 4781 1415 3557 1061 2667 802 2015 610 1533 467 1175 All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 25/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Process - 0.18 micron w/ RF All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 26/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Reliability FIT Calculations for temperature acceleration Single Point Calculation for 0.18 micron w/ RF Variables: 90% 60% Confidence Level Tja [C] 50 50 Junction Temperature at operating condition Tsa [C] 125 125 Ambient Temperature at stress Tjs [C] 140 140 Junction Temperature at stress (assume 15C rise) Ea 0.7 0.7 Energy Activation D 1658 1658 Equivalent Devices stressed (Assuming 1000hrs per device) H 1000 1000 Number of hours on stress F 0 0 Number of failures P 0.1 0.4 Confidence Level [.1 = 90%; .4 = 60%] Constants: k 8.61E-05 8.61E-05 Boltzman's constant [eV/K] Calculated Values: Af 239.4 v 2.0 DH 1658163 X2 4.6 FIT 5.8 239.4 2.0 1658163 1.8 2.3 MTTF MTTF 4.3E+08 49449.8 1.7E+08 19678.1 Acceleration Factor: [exp(Ea/k*(1/(Tja + 273.15) - (1/(Tjs + 273.15))] degrees of freedom [2(F+1)] Total device hours D*H Chi-Square Distribution Value Failures in time [failures / 1xE9 hours] =[X2/(2*AF*D*H)*1E9] Mean Time To Failure [hours] (Note: MTTF is 1/FIT) Mean Time To Failure [years] (Note: MTTF is 1/FIT) FIT Estimation Curves for 0.18 micron w/ RF Tja 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 Af 1971.6 1257.7 814.1 534.4 355.4 239.4 163.2 112.5 78.5 55.3 39.3 28.3 20.5 15.0 11.1 8.2 6.2 4.7 3.5 2.7 FIT (90%) 0.7 1.1 1.7 2.6 3.9 5.8 8.5 12.3 17.7 25.1 35.3 49.1 67.7 92.6 125.4 168.6 224.9 297.7 391.2 510.5 FIT (60%) 0.3 0.4 0.7 1.0 1.6 2.3 3.4 4.9 7.0 10.0 14.0 19.5 27.0 36.8 49.9 67.1 89.5 118.5 155.7 203.2 MTTF MTTF 90% (yrs) 60% (yrs) 162082 407303 103395 259827 66927 168184 43928 110387 29216 73418 19678 49450 13415 33710 9250 23246 6449 16207 4544 11419 3234 8127 2324 5840 1685 4235 1233 3099 910 2287 677 1701 508 1276 383 964 292 733 224 562 All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 27/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Process - 0.25 micron All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 28/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Reliability FIT Calculations for temperature acceleration Single Point Calculation for 0.25 micron Variables: 90% 60% Confidence Level Tja [C] 50 50 Junction Temperature at operating condition Tsa [C] 125 125 Ambient Temperature at stress Tjs [C] 140 140 Junction Temperature at stress (assume 15C rise) Ea 0.7 0.7 Energy Activation D 9610 9610 Equivalent Devices stressed (Assuming 1000hrs per device) H 1000 1000 Number of hours on stress F 0 0 Number of failures P 0.1 0.4 Confidence Level [.1 = 90%; .4 = 60%] Constants: k 8.61E-05 Calculated Values: Af 239.4 v 2.0 DH 9610221 X2 4.6 FIT 1.0 MTTF MTTF 1.0E+09 114048.2 8.61E-05 Boltzman's constant [eV/K] 239.4 2.0 9610221 1.8 0.4 Acceleration Factor: [exp(Ea/k*(1/(Tja + 273.15) - (1/(Tjs + 273.15))] degrees of freedom [2(F+1)] Total device hours D*H Chi-Square Distribution Value Failures in time [failures / 1xE9 hours] =[X2/(2*AF*D*H)*1E9] 2.5E+09 Mean Time To Failure [hours] (Note: MTTF is 1/FIT) 286596.4 Mean Time To Failure [years] (Note: MTTF is 1/FIT) FIT Estimation Curves for 0.25 micron Tja 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 Af 1971.6 1257.7 814.1 534.4 355.4 239.4 163.2 112.5 78.5 55.3 39.3 28.3 20.5 15.0 11.1 8.2 6.2 4.7 3.5 2.7 FIT (90%) 0.1 0.2 0.3 0.4 0.7 1.0 1.5 2.1 3.1 4.3 6.1 8.5 11.7 16.0 21.6 29.1 38.8 51.4 67.5 88.1 FIT (60%) 0.0 0.1 0.1 0.2 0.3 0.4 0.6 0.8 1.2 1.7 2.4 3.4 4.7 6.4 8.6 11.6 15.4 20.4 26.9 35.1 MTTF MTTF 90% (yrs) 60% (yrs) 939381 2360609 599250 1505879 387891 974747 254591 639773 169327 425508 114048 286596 77747 195373 53613 134726 37379 93932 26336 66182 18744 47101 13469 33846 9768 24547 7147 17961 5274 13254 3924 9860 2942 7393 2223 5585 1691 4250 1296 3256 All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 29/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Process - 0.25 micron w/ embedded flash All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 30/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Reliability FIT Calculations for temperature acceleration Single Point Calculation for 0.25 micron w/ embedded flash Variables: 90% 60% Confidence Level Tja [C] 50 50 Junction Temperature at operating condition Tsa [C] 125 125 Ambient Temperature at stress Tjs [C] 140 140 Junction Temperature at stress (assume 15C rise) Ea 0.7 0.7 Energy Activation D 1774 1774 Equivalent Devices stressed (Assuming 1000hrs per device) H 1000 1000 Number of hours on stress F 0 0 Number of failures P 0.1 0.4 Confidence Level [.1 = 90%; .4 = 60%] Constants: k 8.61E-05 8.61E-05 Boltzman's constant [eV/K] Calculated Values: Af 239.4 v 2.0 DH 1773540 X2 4.6 FIT 5.4 239.4 2.0 1773540 1.8 2.2 MTTF MTTF 4.6E+08 52890.6 1.8E+08 21047.3 Acceleration Factor: [exp(Ea/k*(1/(Tja + 273.15) - (1/(Tjs + 273.15))] degrees of freedom [2(F+1)] Total device hours D*H Chi-Square Distribution Value Failures in time [failures / 1xE9 hours] =[X2/(2*AF*D*H)*1E9] Mean Time To Failure [hours] (Note: MTTF is 1/FIT) Mean Time To Failure [years] (Note: MTTF is 1/FIT) FIT Estimation Curves for 0.25 micron w/ embedded flash MTTF MTTF Tja Af FIT (90%) FIT (60%) 90% (yrs) 60% (yrs) 25 1971.6 0.7 0.3 173360 435644 30 1257.7 1.0 0.4 110590 277906 35 814.1 1.6 0.6 71584 179887 40 534.4 2.4 1.0 46984 118068 45 355.4 3.7 1.5 31249 78526 50 239.4 5.4 2.2 21047 52891 55 163.2 8.0 3.2 14348 36056 60 112.5 11.5 4.6 9894 24863 65 78.5 16.5 6.6 6898 17335 70 55.3 23.5 9.3 4860 12214 75 39.3 33.0 13.1 3459 8692 80 28.3 45.9 18.3 2486 6246 85 20.5 63.3 25.2 1803 4530 90 15.0 86.5 34.4 1319 3315 95 11.1 117.3 46.7 973 2446 100 8.2 157.6 62.7 724 1820 105 6.2 210.3 83.7 543 1364 110 4.7 278.3 110.8 410 1031 115 3.5 365.8 145.5 312 784 120 2.7 477.3 190.0 239 601 All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 31/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Process – 0.315 - 0.35 micron All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 32/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Reliability FIT Calculations for temperature acceleration Single Point Calculation for 0.315 um - 0.35 um Variables: 90% 60% Confidence Level Tja [C] 50 50 Junction Temperature at operating condition Tsa [C] 125 125 Ambient Temperature at stress Tjs [C] 140 140 Junction Temperature at stress (assume 15C rise) Ea 0.7 0.7 Energy Activation D 1058 1058 Equivalent Devices stressed (Assuming 1000hrs per device) H 1000 1000 Number of hours on stress F 0 0 Number of failures P 0.1 0.4 Confidence Level [.1 = 90%; .4 = 60%] Constants: k 8.61E-05 8.61E-05 Boltzman's constant [eV/K] Calculated Values: Af 239.4 v 2.0 DH 1058304 X2 4.6 FIT 9.1 239.4 2.0 1058304 1.8 3.6 MTTF MTTF 2.8E+08 31560.8 1.1E+08 12559.3 Acceleration Factor: [exp(Ea/k*(1/(Tja + 273.15) - (1/(Tjs + 273.15))] degrees of freedom [2(F+1)] Total device hours D*H Chi-Square Distribution Value Failures in time [failures / 1xE9 hours] =[X2/(2*AF*D*H)*1E9] Mean Time To Failure [hours] (Note: MTTF is 1/FIT) Mean Time To Failure [years] (Note: MTTF is 1/FIT) FIT Estimation Curves for 0.315 um - 0.35 um Tja 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 Af 1971.6 1257.7 814.1 534.4 355.4 239.4 163.2 112.5 78.5 55.3 39.3 28.3 20.5 15.0 11.1 8.2 6.2 4.7 3.5 2.7 FIT (90%) FIT (60%) 1.1 0.4 1.7 0.7 2.7 1.1 4.1 1.6 6.1 2.4 9.1 3.6 13.3 5.3 19.3 7.7 27.7 11.0 39.4 15.7 55.3 22.0 77.0 30.6 106.1 42.2 145.0 57.7 196.5 78.2 264.2 105.1 352.4 140.2 466.4 185.6 612.9 243.9 799.9 318.3 MTTF MTTF 90% (yrs) 60% (yrs) 103447 259957 65991 165832 42716 107342 28036 70454 18647 46858 12559 31561 8562 21515 5904 14836 4116 10344 2900 7288 2064 5187 1483 3727 1076 2703 787 1978 581 1460 432 1086 324 814 245 615 186 468 143 359 All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 33/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Process - 0.35 micron All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 34/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Reliability FIT Calculations for temperature acceleration Single Point Calculation for 0.35 micron Variables: 90% 60% Confidence Level Tja [C] 50 50 Junction Temperature at operating condition Tsa [C] 125 125 Ambient Temperature at stress Tjs [C] 140 140 Junction Temperature at stress (assume 15C rise) Ea 0.7 0.7 Energy Activation D 2316 2316 Equivalent Devices stressed (Assuming 1000hrs per device) H 1000 1000 Number of hours on stress F 0 0 Number of failures P 0.1 0.4 Confidence Level [.1 = 90%; .4 = 60%] Constants: k 8.61E-05 8.61E-05 Boltzman's constant [eV/K] Calculated Values: Af 239.4 v 2.0 DH 2315808 X2 4.6 FIT 4.2 239.4 2.0 2315808 1.8 1.7 MTTF MTTF 6.0E+08 69062.1 2.4E+08 27482.6 Acceleration Factor: [exp(Ea/k*(1/(Tja + 273.15) - (1/(Tjs + 273.15))] degrees of freedom [2(F+1)] Total device hours D*H Chi-Square Distribution Value Failures in time [failures / 1xE9 hours] =[X2/(2*AF*D*H)*1E9] Mean Time To Failure [hours] (Note: MTTF is 1/FIT) Mean Time To Failure [years] (Note: MTTF is 1/FIT) FIT Estimation Curves for 0.35 micron Tja 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 Af 1971.6 1257.7 814.1 534.4 355.4 239.4 163.2 112.5 78.5 55.3 39.3 28.3 20.5 15.0 11.1 8.2 6.2 4.7 3.5 2.7 FIT (90%) 0.5 0.8 1.2 1.9 2.8 4.2 6.1 8.8 12.7 18.0 25.3 35.2 48.5 66.3 89.8 120.7 161.0 213.1 280.1 365.6 FIT (60%) 0.2 0.3 0.5 0.7 1.1 1.7 2.4 3.5 5.0 7.2 10.1 14.0 19.3 26.4 35.7 48.0 64.1 84.8 111.5 145.5 MTTF MTTF 90% (yrs) 60% (yrs) 226366 568844 144403 362877 93471 234888 61350 154168 40803 102536 27483 69062 18735 47080 12919 32465 9007 22635 6346 15948 4517 11350 3246 8156 2354 5915 1722 4328 1271 3194 946 2376 709 1782 536 1346 408 1024 312 785 All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 35/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Process - 0.35 micron w/ embedded flash All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 36/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Reliability FIT Calculations for temperature acceleration Single Point Calculation for 0.35 micron w/ embedded flash Variables: 90% 60% Confidence Level Tja [C] 50 50 Junction Temperature at operating condition Tsa [C] 125 125 Ambient Temperature at stress Tjs [C] 140 140 Junction Temperature at stress (assume 15C rise) Ea 0.7 0.7 Energy Activation D 1258 1258 Equivalent Devices stressed (Assuming 1000hrs per device) H 1000 1000 Number of hours on stress F 0 0 Number of failures P 0.1 0.4 Confidence Level [.1 = 90%; .4 = 60%] Constants: k 8.61E-05 8.61E-05 Boltzman's constant [eV/K] Calculated Values: Af 239.4 v 2.0 DH 1257504 X2 4.6 FIT 7.6 239.4 2.0 1257504 1.8 3.0 MTTF MTTF 3.3E+08 37501.3 1.3E+08 14923.3 Acceleration Factor: [exp(Ea/k*(1/(Tja + 273.15) - (1/(Tjs + 273.15))] degrees of freedom [2(F+1)] Total device hours D*H Chi-Square Distribution Value Failures in time [failures / 1xE9 hours] =[X2/(2*AF*D*H)*1E9] Mean Time To Failure [hours] (Note: MTTF is 1/FIT) Mean Time To Failure [years] (Note: MTTF is 1/FIT) FIT Estimation Curves for 0.35 micron w/ embedded flash MTTF MTTF Tja Af FIT (90%) FIT (60%) 90% (yrs) 60% (yrs) 25 1971.6 0.9 0.4 122919 308887 30 1257.7 1.5 0.6 78412 197045 35 814.1 2.2 0.9 50756 127546 40 534.4 3.4 1.4 33313 83715 45 355.4 5.2 2.1 22157 55678 50 239.4 7.6 3.0 14923 37501 55 163.2 11.2 4.5 10173 25565 60 112.5 16.3 6.5 7015 17629 65 78.5 23.3 9.3 4891 12291 70 55.3 33.1 13.2 3446 8660 75 39.3 46.5 18.5 2453 6163 80 28.3 64.8 25.8 1762 4429 85 20.5 89.3 35.5 1278 3212 90 15.0 122.1 48.6 935 2350 95 11.1 165.4 65.8 690 1734 100 8.2 222.3 88.5 513 1290 105 6.2 296.5 118.0 385 967 110 4.7 392.5 156.2 291 731 115 3.5 515.8 205.3 221 556 120 2.7 673.2 267.9 170 426 All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 37/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Process - 0.45 - 0.5 um SPTM All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 38/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Reliability FIT Calculations for temperature acceleration Single Point Calculation for 0.45 - 0.5 um SPTM Variables: 90% 60% Confidence Level Tja [C] 50 50 Junction Temperature at operating condition Tsa [C] 125 125 Ambient Temperature at stress Tjs [C] 140 140 Junction Temperature at stress (assume 15C rise) Ea 0.7 0.7 Energy Activation D 206 206 Equivalent Devices stressed (Assuming 1000hrs per device) H 1000 1000 Number of hours on stress F 0 0 Number of failures P 0.1 0.4 Confidence Level [.1 = 90%; .4 = 60%] Constants: k 8.61E-05 Calculated Values: Af 239.4 v 2.0 DH 206064 X2 4.6 FIT 46.7 MTTF MTTF 2.1E+07 2445.4 8.61E-05 Boltzman's constant [eV/K] 239.4 2.0 206064 1.8 18.6 5.4E+07 6145.2 Acceleration Factor: [exp(Ea/k*(1/(Tja + 273.15) - (1/(Tjs + 273.15))] degrees of freedom [2(F+1)] Total device hours D*H Chi-Square Distribution Value Failures in time [failures / 1xE9 hours] =[X2/(2*AF*D*H)*1E9] Mean Time To Failure [hours] (Note: MTTF is 1/FIT) Mean Time To Failure [years] (Note: MTTF is 1/FIT) FIT Estimation Curves for 0.45 - 0.5 um SPTM Tja 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 Af 1971.6 1257.7 814.1 534.4 355.4 239.4 163.2 112.5 78.5 55.3 39.3 28.3 20.5 15.0 11.1 8.2 6.2 4.7 3.5 2.7 FIT (90%) 5.7 8.9 13.7 20.9 31.4 46.7 68.5 99.3 142.4 202.1 284.0 395.3 545.0 744.9 1009.4 1356.8 1809.6 2395.4 3147.9 4108.3 FIT (60%) 2.3 3.5 5.5 8.3 12.5 18.6 27.2 39.5 56.7 80.4 113.0 157.3 216.9 296.4 401.7 539.9 720.1 953.2 1252.7 1634.9 MTTF MTTF 90% (yrs) 60% (yrs) 20142 50617 12849 32289 8317 20901 5459 13718 3631 9124 2445 6145 1667 4189 1150 2889 801 2014 565 1419 402 1010 289 726 209 526 153 385 113 284 84 211 63 159 48 120 36 91 28 70 All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 39/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Process - 0.6 - 1.0um All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 40/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Reliability FIT Calculations for temperature acceleration Single Point Calculation for 0.6 - 1.0um Variables: 90% 60% Confidence Level Tja [C] 50 50 Junction Temperature at operating condition Tsa [C] 125 125 Ambient Temperature at stress Tjs [C] 140 140 Junction Temperature at stress (assume 15C rise) Ea 0.7 0.7 Energy Activation D 582 582 Equivalent Devices stressed (Assuming 1000hrs per device) H 1000 1000 Number of hours on stress F 0 0 Number of failures P 0.1 0.4 Confidence Level [.1 = 90%; .4 = 60%] Constants: k 8.61E-05 Calculated Values: Af 239.4 v 2.0 DH 582487 X2 4.6 FIT 16.5 MTTF MTTF 6.1E+07 6912.6 8.61E-05 Boltzman's constant [eV/K] 239.4 2.0 582487 1.8 6.6 1.5E+08 17370.9 Acceleration Factor: [exp(Ea/k*(1/(Tja + 273.15) - (1/(Tjs + 273.15))] degrees of freedom [2(F+1)] Total device hours D*H Chi-Square Distribution Value Failures in time [failures / 1xE9 hours] =[X2/(2*AF*D*H)*1E9] Mean Time To Failure [hours] (Note: MTTF is 1/FIT) Mean Time To Failure [years] (Note: MTTF is 1/FIT) FIT Estimation Curves for 0.6 - 1.0um Tja 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 Af 1971.6 1257.7 814.1 534.4 355.4 239.4 163.2 112.5 78.5 55.3 39.3 28.3 20.5 15.0 11.1 8.2 6.2 4.7 3.5 2.7 FIT (90%) 2.0 3.1 4.9 7.4 11.1 16.5 24.2 35.1 50.4 71.5 100.5 139.8 192.8 263.5 357.1 480.0 640.2 847.4 1113.6 1453.4 FIT (60%) 0.8 1.3 1.9 2.9 4.4 6.6 9.6 14.0 20.1 28.5 40.0 55.6 76.7 104.9 142.1 191.0 254.8 337.2 443.2 578.4 MTTF MTTF 90% (yrs) 60% (yrs) 56937 143079 36321 91273 23511 59081 15431 38777 10263 25791 6913 17371 4712 11842 3250 8166 2266 5693 1596 4011 1136 2855 816 2051 592 1488 433 1089 320 803 238 598 178 448 135 339 103 258 79 197 All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 41/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Process – Diode All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 42/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Reliability FIT Calculations for temperature acceleration Single Point Calculation for Diode Variables: 90% 60% Confidence Level Tja [C] 50 50 Junction Temperature at operating condition Tsa [C] 125 125 Ambient Temperature at stress Tjs [C] 140 140 Junction Temperature at stress (assume 15C rise) Ea 0.7 0.7 Energy Activation D 188 188 Equivalent Devices stressed (Assuming 1000hrs per device) H 1000 1000 Number of hours on stress F 0 0 Number of failures P 0.1 0.4 Confidence Level [.1 = 90%; .4 = 60%] Constants: k 8.61E-05 8.61E-05 Boltzman's constant [eV/K] Calculated Values: Af 239.4 v 2.0 DH 187703 X2 4.6 FIT 51.2 239.4 2.0 187703 1.8 20.4 MTTF MTTF 4.9E+07 5597.7 2.0E+07 2227.5 Acceleration Factor: [exp(Ea/k*(1/(Tja + 273.15) - (1/(Tjs + 273.15))] degrees of freedom [2(F+1)] Total device hours D*H Chi-Square Distribution Value Failures in time [failures / 1xE9 hours] =[X2/(2*AF*D*H)*1E9] Mean Time To Failure [hours] (Note: MTTF is 1/FIT) Mean Time To Failure [years] (Note: MTTF is 1/FIT) FIT Estimation Curves for Diode Tja 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 Af 1971.6 1257.7 814.1 534.4 355.4 239.4 163.2 112.5 78.5 55.3 39.3 28.3 20.5 15.0 11.1 8.2 6.2 4.7 3.5 2.7 FIT (90%) FIT (60%) 6.2 2.5 9.8 3.9 15.1 6.0 23.0 9.1 34.5 13.7 51.2 20.4 75.2 29.9 109.0 43.4 156.4 62.2 221.9 88.3 311.8 124.1 433.9 172.7 598.3 238.1 817.7 325.4 1108.2 441.0 1489.6 592.8 1986.6 790.6 2629.7 1046.5 3455.9 1375.2 4510.2 1794.8 MTTF MTTF 90% (yrs) 60% (yrs) 18348 46107 11704 29412 7576 19038 4973 12496 3307 8311 2228 5598 1519 3816 1047 2631 730 1835 514 1293 366 920 263 661 191 479 140 351 103 259 77 193 57 144 43 109 33 83 25 64 All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 43/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Process - High Voltage All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 44/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Reliability FIT Calculations for temperature acceleration Single Point Calculation for High Voltage Variables: 90% 60% Confidence Level Tja [C] 50 50 Junction Temperature at operating condition Tsa [C] 125 125 Ambient Temperature at stress Tjs [C] 140 140 Junction Temperature at stress (assume 15C rise) Ea 0.7 0.7 Energy Activation D 5801 5801 Equivalent Devices stressed (Assuming 1000hrs per device) H 1000 1000 Number of hours on stress F 0 0 Number of failures P 0.1 0.4 Confidence Level [.1 = 90%; .4 = 60%] Constants: k 8.61E-05 Calculated Values: Af 239.4 v 2.0 DH 5801146 X2 4.6 FIT 1.7 MTTF MTTF 6.0E+08 68844.4 8.61E-05 Boltzman's constant [eV/K] 239.4 2.0 5801146 1.8 0.7 Acceleration Factor: [exp(Ea/k*(1/(Tja + 273.15) - (1/(Tjs + 273.15))] degrees of freedom [2(F+1)] Total device hours D*H Chi-Square Distribution Value Failures in time [failures / 1xE9 hours] =[X2/(2*AF*D*H)*1E9] 1.5E+09 Mean Time To Failure [hours] (Note: MTTF is 1/FIT) 173002.0 Mean Time To Failure [years] (Note: MTTF is 1/FIT) FIT Estimation Curves for High Voltage Tja 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 Af 1971.6 1257.7 814.1 534.4 355.4 239.4 163.2 112.5 78.5 55.3 39.3 28.3 20.5 15.0 11.1 8.2 6.2 4.7 3.5 2.7 FIT (90%) 0.2 0.3 0.5 0.7 1.1 1.7 2.4 3.5 5.1 7.2 10.1 14.0 19.4 26.5 35.9 48.2 64.3 85.1 111.8 145.9 FIT (60%) 0.1 0.1 0.2 0.3 0.4 0.7 1.0 1.4 2.0 2.9 4.0 5.6 7.7 10.5 14.3 19.2 25.6 33.9 44.5 58.1 MTTF MTTF 90% (yrs) 60% (yrs) 567051 1424966 361733 909014 234148 588400 153682 386195 102213 256855 68844 173002 46931 117935 32363 81327 22564 56701 15898 39950 11314 28432 8130 20431 5896 14818 4314 10842 3184 8000 2369 5952 1776 4463 1342 3371 1021 2565 782 1966 All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 45/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Flash Reliability Summary by Fab Technology All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 46/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 90 nm Flash Reliability Summary Effective Dev-Hrs at 150°C Chargeable Failures 429,072 Typical Case: Predicted FIT @Ta=50 °C, Worst Case: Predicted FIT @Ta=85 °C, 60% UCL 10 Year Predicted Failure Rate Ta=50°C 60% UCL 60% UCL 10 Year Predicted Failure Rate Ta=85°C 60% UCL 15.0 0.131% 116.4 1.014% 0 Data Retention Reliability 100000 MTTF (Years) 10000 1000 100 10 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 100 110 125 90 100 110 125 Use Temperature [C] 5 Year Continuous Use Fallout (% ) Data Retention Reliability Continuous Use Fallout 10% 1% 0% 0% 0% 20 25 30 35 40 45 50 55 60 65 70 75 80 85 Use Temperature [C] All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 47/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 0.11um OTP Reliability Summary Effective Dev-Hrs at 150°C Chargeable Failures 2,749,000 Typical Case: Predicted FIT @Ta=50 °C, Worst Case: Predicted FIT @Ta=85 °C, 60% UCL 10 Year Predicted Failure Rate Ta=50°C 60% UCL 60% UCL 10 Year Predicted Failure Rate Ta=85°C 60% UCL 2.3 0.020% 18.2 0.159% 0 Data Retention Reliability 1000000 MTTF (Years) 100000 10000 1000 100 10 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 100 110 125 90 100 110 125 Use Temperature [C] 5 Year Continuous Use Fallout (% ) Data Retention Reliability Continuous Use Fallout 10% 1% 0% 0% 0% 20 25 30 35 40 45 50 55 60 65 70 75 80 85 Use Temperature [C] All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 48/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 0.13um OTP Reliability Summary Effective Dev-Hrs at 150°C Chargeable Failures 2,516,000 Typical Case: Predicted FIT @Ta=50 °C, Worst Case: Predicted FIT @Ta=85 °C, 60% UCL 10 Year Predicted Failure Rate Ta=50°C 60% UCL 60% UCL 10 Year Predicted Failure Rate Ta=85°C 60% UCL 2.6 0.022% 19.8 0.174% 0 Data Retention Reliability 1000000 MTTF (Years) 100000 10000 1000 100 10 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 100 110 125 90 100 110 125 Use Temperature [C] 5 Year Continuous Use Fallout (% ) Data Retention Reliability Continuous Use Fallout 10% 1% 0% 0% 0% 20 25 30 35 40 45 50 55 60 65 70 75 80 85 Use Temperature [C] All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 49/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 0.18um Flash Reliability Summary Effective Dev-Hrs at 150°C Chargeable Failures 22,772,542 Typical Case: Predicted FIT @Ta=50 °C, Worst Case: Predicted FIT @Ta=85 °C, 60% UCL 10 Year Predicted Failure Rate Ta=50°C 60% UCL 60% UCL 10 Year Predicted Failure Rate Ta=85°C 60% UCL 1.0 0.008% 7.4 0.065% 2 Data Retention Reliability 10000000 1000000 MTTF (Years) 100000 10000 1000 100 10 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 100 110 125 90 100 110 125 Use Temperature [C] 5 Year Continuous Use Fallout (% ) Data Retention Reliability Continuous Use Fallout 10% 1% 0% 0% 0% 0% 20 25 30 35 40 45 50 55 60 65 70 75 80 85 Use Temperature [C] All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 50/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 0.18um OTP Reliability Summary Effective Dev-Hrs at 150°C Chargeable Failures 14,882,512 Typical Case: Predicted FIT @Ta=50 °C, Worst Case: Predicted FIT @Ta=85 °C, 60% UCL 10 Year Predicted Failure Rate Ta=50°C 60% UCL 60% UCL 10 Year Predicted Failure Rate Ta=85°C 60% UCL 0.4 0.004% 3.4 0.029% 0 Data Retention Reliability 10000000 1000000 MTTF (Years) 100000 10000 1000 100 10 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 100 110 125 90 100 110 125 Use Temperature [C] 5 Year Continuous Use Fallout (% ) Data Retention Reliability Continuous Use Fallout 10% 1% 0% 0% 0% 0% 20 25 30 35 40 45 50 55 60 65 70 75 80 85 Use Temperature [C] All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 51/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 0.25um HDR Flash Reliability Summary Effective Dev-Hrs at 150°C Chargeable Failures 4,955,033 Typical Case: Predicted FIT @Ta=50 °C, Worst Case: Predicted FIT @Ta=85 °C, 60% UCL 10 Year Predicted Failure Rate Ta=50°C 60% UCL 60% UCL 10 Year Predicted Failure Rate Ta=85°C 60% UCL 1.3 0.011% 10.1 0.088% 0 Data Retention Reliability 1000000 MTTF (Years) 100000 10000 1000 100 10 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 100 110 125 90 100 110 125 Use Temperature [C] 5 Year Continuous Use Fallout (% ) Data Retention Reliability Continuous Use Fallout 10% 1% 0% 0% 0% 0% 20 25 30 35 40 45 50 55 60 65 70 75 80 85 Use Temperature [C] All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 52/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 0.35um Non-HE Flash Reliability Summary Effective Dev-Hrs at 150°C Chargeable Failures 7,472,366 Typical Case: Predicted FIT @Ta=50 °C, Worst Case: Predicted FIT @Ta=85 °C, 60% UCL 10 Year Predicted Failure Rate Ta=50°C 60% UCL 60% UCL 10 Year Predicted Failure Rate Ta=85°C 60% UCL 0.9 0.008% 6.7 0.059% 0 Data Retention Reliability 10000000 1000000 MTTF (Years) 100000 10000 1000 100 10 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 100 110 125 90 100 110 125 Use Temperature [C] 5 Year Continuous Use Fallout (% ) Data Retention Reliability Continuous Use Fallout 10% 1% 0% 0% 0% 0% 20 25 30 35 40 45 50 55 60 65 70 75 80 85 Use Temperature [C] All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 53/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 0.35um HE Flash Reliability Summary Effective Dev-Hrs at 150°C Chargeable Failures 2,770,053 Typical Case: Predicted FIT @Ta=50 °C, Worst Case: Predicted FIT @Ta=85 °C, 60% UCL 10 Year Predicted Failure Rate Ta=50°C 60% UCL 60% UCL 10 Year Predicted Failure Rate Ta=85°C 60% UCL 2.3 0.020% 18.0 0.158% 0 Data Retention Reliability 1000000 MTTF (Years) 100000 10000 1000 100 10 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 100 110 125 90 100 110 125 Use Temperature [C] 5 Year Continuous Use Fallout (% ) Data Retention Reliability Continuous Use Fallout 10% 1% 0% 0% 0% 20 25 30 35 40 45 50 55 60 65 70 75 80 85 Use Temperature [C] All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 54/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Reliability Monitors Overview Once a product is qualified, we verify continued product reliability with a reliability monitor program. The monitor program is scheduled to periodically sample wafer fab and package technologies. The results are published in this report. Any failures are used to drive corrective action and product and process improvement. Stress Descriptions Silicon Labs follows JEDEC as the preferred industry standard. The most common reliability tests and conditions are listed in the following table. The specific JEDEC documents are available on the Internet at www.jedec.org. Reliability Tests, Procedures and Conditions Table Symbol DR Stress Name Data Retention Bake Stress Procedure AEC_Q100 Standard Conditions 150°C (pkg form); 250C (wafer) ELFR Early Life Failure Rate JEDEC JESD22A108 125°C; Max operating voltage HAST Highly-Accelerated Temperature and Humidity Stress Test JEDEC JESD22A110 130°C; 85%rh; 22.2 psia; biased HTB High Temperature Bake JEDEC JESD22A103 150°C LTOL Low Temperature Operating Life JEDEC JESD22A108 -10°C; Max operating voltage HTOL High Temperature Operating Life JEDEC JESD22A108 125°C; Max operating voltage PC Preconditioning JEDEC JESD22A113 According to MSL level prior to package stresses (listed below) TC Temperature Cycle JEDEC JESD22A104 Condition C: -65 to 150°C Unbiased HAST JEDEC JESD22A118 130°C; 85%rh Temperature Humidity Bias JEDEC JESD22A101 85°C; 85%RH; Max operating voltage U-HAST THB Qualification Guideline Stress Test Driven Qualification of Integrated Circuits; EIA / JEDEC EIA/JESD47 / AEC-Q100 All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 55/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Silicon Reliability Test Method and Conditions Early Life Failure Rate (ELFR) The purpose of this test is to simulate the user operation over the first portion of the product lifetime, also called early life. Silicon Labs typically uses dynamic conditions, meaning the device is powered up, and the inputs are toggled to exercise a maximum number of transistors and circuit area. Reliability acceleration is accomplished primarily by temperature and secondarily by voltage. High Temperature Operating Life (HTOL) The purpose of this test is to simulate the user part operation over the expected life of the product. We typically use dynamic conditions, meaning the device is powered up, and the inputs are toggled to exercise a maximum number of transistors and circuit area. Reliability acceleration is accomplished primarily by temperature and secondarily by voltage. High Temperature Storage Life (HTSL) / High Temperature Bake (HTB) The purpose of this test is to determine the effect of storage at elevated temperature. This is performed to assess the stability of semiconductor device materials and interfaces. Low Temperature Operating Life (LTOL) The purpose of this test is to simulate the user operation at low temperature. This is a specialized test to address specific fab failure mechanisms, such as hot-carrier injection. Wafer level reliability tests are more effective for this characterization and are the primary qualification method. Silicon Labs typically uses dynamic conditions, meaning the device is powered up, and the inputs are toggled to exercise a maximum number of transistors and circuit area. Nonvolatile Memory Data Retention (DR) The purpose of this test is to measure the ability of a nonvolatile memory cell to retain its charge state at elevated temperature in the absence of applied external bias. This test can be done either in wafer form or on packaged units. All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 56/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Reliability Monitor Report – Silicon Stresses QLotNum Stress FabProcess ReadDate SampleSize ReadPt Fails ºC Q038287 Q038272 Q038409 Q038282 Q038271 Q038336 Q038555 Q038586 Q038570 Q038582 Q039173 Q039169 Q039113 Q039380 Q037884 Q038277 Q038284 Q038285 Q038290 Q038170 Q038169 Q038168 Q038578 Q038546 Q038545 Q038544 Q039137 Q039157 Q039365 Q037668 Q037757 Q037823 Q037960 Q037840 Q037828 Q038200 Q038229 Q038322 Q038278 Q038692 Q039141 Q037661 Q037567 Q037580 Q037711 HTSL HTSL HTOL HTSL HTSL HTSL HTSL HTSL HTSL HTSL HTSL HTSL HTSL HTOL HTOL HTSL HTSL HTSL HTSL HTSL HTSL HTSL HTSL HTSL HTSL HTSL HTSL HTSL HTSL HTOL HTSL HTSL ELFR HTSL HTSL ELFR ELFR ELFR HTSL HTSL HTSL HTSL HTSL ELFR HTOL 0.11 um 0.11 um 0.11 um 0.11 um 0.11 um 0.11 um 0.11 um 0.11 um 0.11 um 0.11 um 0.11 um 0.11 um 0.11 um 0.11 um 0.13 um 0.13 um 0.13 um 0.13 um 0.13 um 0.13 um 0.13 um 0.13 um 0.13 um 0.13 um 0.13 um 0.13 um 0.13 um 0.13 um 0.13 um 0.18 um 0.18 um 0.18 um 0.18 um 0.18 um 0.18 um 0.18 um 0.18 um 0.18 um 0.18 um 0.18 um 0.18 um 0.18 um, embedded flash 0.18 um, embedded flash 0.18 um, embedded flash 0.18 um, embedded flash 25-Sep-15 03-Oct-15 09-Oct-15 12-Oct-15 16-Oct-15 28-Oct-15 04-Jan-16 11-Jan-16 15-Jan-16 27-Jan-16 09-Apr-16 10-Apr-16 13-Apr-16 10-May-16 14-Sep-15 21-Sep-15 29-Sep-15 12-Oct-15 02-Nov-15 17-Dec-15 17-Dec-15 17-Dec-15 24-Dec-15 03-Mar-16 03-Mar-16 03-Mar-16 17-Mar-16 19-Apr-16 22-Jun-16 18-Jul-15 22-Jul-15 06-Aug-15 18-Aug-15 03-Sep-15 03-Sep-15 11-Sep-15 15-Sep-15 18-Sep-15 21-Sep-15 11-Feb-16 18-Mar-16 15-Jul-15 15-Jul-15 28-Jul-15 03-Aug-15 80 80 80 80 80 32 30 30 80 80 80 80 80 80 80 80 80 80 80 25 25 25 80 30 30 30 80 80 80 83 30 25 833 85 30 722 354 724 80 30 80 20 26 509 80 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 48 1500 1500 48 48 48 1000 1000 1000 1000 1000 48 1000 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 150 150 125 150 150 150 150 150 150 150 150 150 150 125 125 150 150 150 150 150 150 150 150 150 150 150 150 150 150 100 150 150 125 100 100 25 25 25 150 150 150 150 150 125 125 All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 57/72 Quarterly Quality & Reliability Report QLotNum Stress Q038094 Q038068 Q037443 Q037442 Q037441 Q038115 Q038150 Q038288 Q038152 Q038055 Q038054 Q038053 Q038280 Q038279 Q038276 Q038355 Q037977 Q038159 Q038151 Q038112 Q038174 Q038230 Q038228 Q038457 Q038456 Q038455 Q038275 Q038314 Q038315 Q038183 Q038182 Q038181 Q038215 Q038214 Q038213 Q038358 Q038366 Q038547 Q038192 Q038191 Q038190 Q038503 Q038507 Q038622 Q038627 ELFR ELFR HTSL HTSL HTSL ELFR LTDR HTSL LTDR HTSL HTSL HTSL HTSL HTSL HTSL ELFR HTSL HTSL HTDR HTDR HTOL HTDR HTOL HTSL HTSL HTSL HTSL LTDR HTSL HTSL HTSL HTSL HTSL HTSL HTSL HTSL HTSL ELFR HTSL HTSL HTSL HTSL HTSL LTDR HTDR FabProcess 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, 0.18 um, embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash 16Q2_QR_Report-01 ReadDate SampleSize ReadPt Fails ºC 08-Sep-15 17-Sep-15 17-Sep-15 17-Sep-15 17-Sep-15 21-Sep-15 23-Sep-15 25-Sep-15 25-Sep-15 01-Oct-15 01-Oct-15 01-Oct-15 06-Oct-15 06-Oct-15 06-Oct-15 07-Oct-15 11-Oct-15 19-Oct-15 20-Oct-15 20-Oct-15 26-Oct-15 27-Oct-15 27-Oct-15 27-Oct-15 27-Oct-15 27-Oct-15 27-Oct-15 27-Oct-15 28-Oct-15 29-Oct-15 29-Oct-15 29-Oct-15 30-Oct-15 30-Oct-15 30-Oct-15 02-Nov-15 09-Nov-15 24-Nov-15 12-Dec-15 12-Dec-15 12-Dec-15 16-Dec-15 17-Dec-15 11-Jan-16 14-Jan-16 511 521 25 25 25 522 40 80 40 30 30 30 80 80 80 842 80 50 40 40 80 44 84 24 24 25 80 39 46 48 48 48 30 30 30 49 50 850 25 25 25 50 50 40 45 48 48 1000 1000 1000 48 500 1000 500 1000 1000 1000 1000 1000 1000 48 1000 1000 1000 1000 700 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 48 1000 1000 1000 1000 1000 1000 1000 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 125 125 150 150 150 125 25 150 25 150 150 150 150 150 150 125 150 150 150 150 125 150 125 150 150 150 150 25 150 150 150 150 150 150 150 150 150 125 150 150 150 150 150 25 150 All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 58/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 QLotNum Stress FabProcess ReadDate SampleSize ReadPt Fails ºC Q038785 Q038968 Q038967 Q038966 Q039149 Q039145 Q038848 Q038846 Q039177 Q038861 Q039165 Q039125 Q039129 Q039133 Q039096 Q037626 Q037625 Q037630 Q037629 Q037989 Q038033 Q039121 Q037380 Q038410 Q038286 Q039379 Q037715 Q037802 Q038042 Q037990 Q037991 Q038177 Q038273 Q038155 Q038154 Q038379 Q038590 Q038519 Q038726 Q038664 Q038780 Q038639 Q038795 Q038729 Q038803 ELFR HTSL HTSL HTSL HTSL HTSL HTDR LTDR HTSL HTOL HTSL HTSL HTSL HTSL HTSL HTSL HTSL HTOL HTOL ELFR ELFR HTSL HTSL HTOL HTSL HTOL HTOL HTOL ELFR ELFR HTOL ELFR HTSL HTSL HTSL HTOL ELFR HTOL ELFR HTOL ELFR HTOL HTSL ELFR ELFR 0.18 um, embedded flash 0.18 um, embedded flash 0.18 um, embedded flash 0.18 um, embedded flash 0.18 um, embedded flash 0.18 um, embedded flash 0.18 um, embedded flash 0.18 um, embedded flash 0.18 um, embedded flash 0.18 um, embedded flash 0.18 um, embedded flash 0.18 um, embedded flash 0.18 um, embedded flash 0.18 um, embedded flash 0.18 um, embedded flash 0.18 um, OTP 0.18 um, OTP 0.18 um, OTP 0.18 um, OTP 0.18 um, OTP 0.18 um, OTP 0.18 um, OTP 0.18 um, RF 0.18 um, RF 0.18 um, RF 0.18 um, RF 0.25 um 0.25 um 0.25 um 0.25 um 0.25 um 0.25 um 0.25 um 0.25 um 0.25 um 0.25 um 0.25 um 0.25 um 0.25 um 0.25 um 0.25 um 0.25 um 0.25 um 0.25 um 0.25 um 10-Feb-16 26-Feb-16 26-Feb-16 26-Feb-16 18-Mar-16 18-Mar-16 22-Mar-16 22-Mar-16 24-Mar-16 25-Mar-16 11-Apr-16 13-Apr-16 16-Apr-16 23-Apr-16 28-Apr-16 03-Jul-15 03-Jul-15 09-Jul-15 09-Jul-15 06-Aug-15 18-Aug-15 13-Apr-16 09-Jul-15 09-Oct-15 12-Oct-15 10-May-16 27-Jul-15 01-Aug-15 11-Aug-15 15-Sep-15 23-Sep-15 29-Sep-15 03-Oct-15 05-Nov-15 05-Nov-15 13-Nov-15 07-Dec-15 22-Dec-15 21-Jan-16 22-Jan-16 29-Jan-16 29-Jan-16 29-Jan-16 04-Feb-16 11-Feb-16 840 77 77 77 80 80 49 45 80 90 80 80 80 80 41 50 50 86 86 560 560 80 80 80 80 80 80 100 808 818 100 822 80 50 50 80 816 100 818 89 212 92 46 596 809 48 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 48 48 1000 2000 1000 1000 1000 1000 1000 48 48 1000 48 1000 1000 1000 1000 48 1000 48 1000 48 1000 500 48 48 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 125 150 150 150 150 150 175 25 150 125 150 150 150 150 150 150 150 125 125 125 125 150 150 125 150 125 125 125 125 125 125 125 150 150 150 125 125 125 125 125 125 125 175 125 125 All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 59/72 Quarterly Quality & Reliability Report QLotNum Stress Q038574 Q038289 Q038313 Q038312 Q039181 Q037808 Q037798 Q037793 Q037788 Q037769 Q037411 Q037994 Q038281 Q038032 Q038598 Q038652 Q038650 Q038677 Q039040 Q039033 Q039032 Q039117 Q038772 Q039153 Q038821 Q038813 Q039226 Q037590 Q037658 Q037624 Q037622 Q037774 Q037773 Q037999 Q038011 Q038137 Q038027 Q038012 Q037998 Q038038 Q038148 Q038147 Q038076 Q038124 Q038365 HTSL HTSL HTOL HTOL HTSL ELFR HTSL HTSL HTSL HTOL ELFR HTOL HTSL ELFR HTSL HTSL HTSL HTOL HTSL HTSL HTSL HTSL HTSL HTSL HTSL HTSL HTSL HTSL HTDR LTOL HTOL HTSL HTSL ELFR HTSL ELFR HTDR HTSL HTOL HTSL LTDR LTDR HTDR HTSL ELFR FabProcess 0.25 um, 0.35 um, 0.35 um, 0.35 um, 0.35 um, 90 nm, 90 nm, 90 nm, 90 nm, 90 nm, 90 nm, 90 nm, 90 nm, 90 nm, 90 nm, 90 nm, 90 nm, 90 nm, 90 nm, 90 nm, 90 nm, 90 nm, 90 nm, embedded flash embedded flash embedded flash embedded flash embedded flash 55 nm 55 nm 55 nm 55 nm 55 nm 55 nm 55 nm 55 nm 55 nm 55 nm 55 nm 55 nm 55 nm 55 nm 55 nm 55 nm 55 nm 55 nm 55 nm 55 nm 55 nm 55 nm embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash embedded flash 16Q2_QR_Report-01 ReadDate SampleSize ReadPt Fails ºC 15-Jan-16 02-Nov-15 10-Dec-15 10-Dec-15 18-Apr-16 02-Jul-15 29-Jul-15 29-Jul-15 29-Jul-15 01-Aug-15 05-Aug-15 08-Oct-15 12-Oct-15 16-Oct-15 24-Feb-16 08-Mar-16 08-Mar-16 22-Mar-16 06-Apr-16 06-Apr-16 06-Apr-16 23-Apr-16 27-Apr-16 28-Apr-16 04-May-16 05-May-16 13-May-16 01-Jul-15 13-Jul-15 13-Jul-15 14-Jul-15 24-Jul-15 24-Jul-15 06-Aug-15 09-Sep-15 14-Sep-15 17-Sep-15 18-Sep-15 21-Sep-15 22-Sep-15 22-Sep-15 22-Sep-15 23-Sep-15 06-Oct-15 09-Oct-15 80 80 79 80 80 504 30 30 30 80 799 81 80 510 47 47 46 80 50 50 50 80 47 80 47 47 50 25 40 40 79 27 27 507 35 505 39 35 78 28 40 40 40 28 676 1000 1000 1000 1000 1000 48 1000 1000 1000 1000 48 1000 1000 48 2000 2000 2000 2000 500 500 500 1000 2000 1000 2000 2000 1000 1000 1000 1000 1000 1000 1000 48 1000 48 1000 1000 1000 1000 500 500 1000 1000 48 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 150 150 125 125 150 75 150 150 150 125 75 75 150 40 150 150 150 75 150 150 150 150 150 150 150 150 150 150 150 -10 125 150 150 125 150 125 150 150 125 150 25 25 150 150 125 All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 60/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 QLotNum Stress FabProcess ReadDate SampleSize ReadPt Fails ºC Q039238 Q039261 Q039260 Q037627 Q037767 Q037907 Q038791 Q037984 Q037820 Q038020 Q038111 Q038106 Q038283 Q038461 Q038394 Q038392 Q038397 Q038596 Q038725 Q038721 Q038637 Q038690 Q038710 Q038722 Q038734 Q038740 Q038739 Q038931 Q038894 Q039273 Q039193 Q039233 HTSL HTSL HTSL HTSL HTOL HTSL HTOL HTOL ELFR ELFR HTSL HTSL HTSL ELFR HTSL HTSL HTOL ELFR ELFR ELFR HTOL HTSL HTSL HTSL HTSL HTOL HTOL ELFR HTOL ELFR HTOL HTSL 90 nm, embedded flash 90 nm, embedded flash 90 nm, embedded flash High Voltage High Voltage High Voltage High Voltage High Voltage High Voltage High Voltage High Voltage High Voltage High Voltage High Voltage High Voltage High Voltage High Voltage High Voltage High Voltage High Voltage High Voltage High Voltage High Voltage High Voltage High Voltage High Voltage High Voltage High Voltage High Voltage High Voltage High Voltage High Voltage 19-May-16 25-May-16 25-May-16 02-Jul-15 24-Jul-15 24-Aug-15 04-Sep-15 08-Sep-15 10-Sep-15 16-Sep-15 02-Oct-15 02-Oct-15 12-Oct-15 25-Oct-15 13-Nov-15 13-Nov-15 17-Nov-15 15-Dec-15 13-Jan-16 23-Jan-16 23-Jan-16 03-Feb-16 18-Feb-16 22-Feb-16 25-Feb-16 02-Mar-16 02-Mar-16 10-Mar-16 05-Apr-16 05-May-16 05-May-16 18-May-16 35 35 35 30 88 27 80 84 1189 1181 30 30 80 510 30 30 79 508 503 1173 85 27 27 30 30 80 80 1210 85 1201 83 27 1000 1000 1000 1000 1000 1000 1000 1000 48 48 1000 1000 1000 48 1000 1000 1000 48 48 48 1000 1000 1000 1000 1000 1000 1000 48 1000 48 1000 1000 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 150 150 150 150 125 150 125 125 125 125 150 150 150 125 150 150 125 125 125 125 125 150 150 150 150 125 125 125 125 125 125 150 All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 61/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Package Reliability Test Method and Conditions Preconditioning (PC) This test method is performed to simulate the various shipping conditions, the end use environment and customer board mounting process for a given packaging system. Preconditioning is an industry standard flow for non-hermetic (plastic) integrated circuit packages that is representative of a typical industry solder reflow operation. The test parts are subject to bake, moisture soak and three reflow cycles prior to being submitted to package reliability testing. Temperature Cycling (TC) This test evaluates potential reliability degradation due to thermal cycling effects. Devices are placed in a chamber using forced air to cycle devices between the specified temperature extremes. This test is conducted to determine the ability of components and solder interconnects to withstand mechanical stresses induced by alternating high and low temperature extremes. Permanent changes in electrical and/or physical characteristics can result from these mechanical stresses. Temperature Humidity and Bias (THB) This test evaluates the reliability of non-hermetic packaged integrated circuits in humid environments. It employs severe conditions of temperature, humidity and bias to accelerate the penetration of moisture through the external protective material (encapsulant) or along the interface between the external protective material and the metallic conductors passing through it. This test is less accelerated than autoclave and unbiased HAST and takes longer to complete. It provides more realistic results in line with actual field performance. The dominant failure mechanism is aluminum corrosion accelerated by moisture, bias and contamination. Highly-Accelerated Temperature and Humidity Stress Test (HAST) This test evaluates the reliability of non-hermetic packaged integrated circuits in humid environments. It employs severe conditions of temperature, humidity, and bias which accelerate the penetration of moisture through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors which pass through it. The stress usually activates the same failure mechanisms as the “85/85” Temperature Humidity and Bias (THB) test. Unbiased Highly-Accelerated Stress Test (U-HAST) This test is performed to evaluate the reliability of non-hermetic packaged integrated circuits in humid environments. It is an alternate to Autoclave and tests for the same failure mechanisms. It employs severe conditions of temperature, humidity, and pressure to accelerate the penetration of moisture through the external protective material (encapsulant) or along the interface between the external protective material and the metallic conductors passing through it. UHAST is preferred over the autoclave stress method due to the reduction in artifacts induced by the 100%rh environment of autoclave, such as lead corrosion or contamination transfer by liquid water. The dominant failure mechanism is corrosion of internal materials. All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 62/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Reflow Profile and Moisture Sensitivity Level Overview Non-hermetic (plastic) integrated circuit packages are classified by moisture sensitivity level according to IPC/JEDEC J-Std-020. It is critical for final product quality that the board assembly process account for package moisture sensitivity, especially the peak reflow temperature and the maximum manufacturing expose time (MET). Reflow Profile Non-hermetic integrated circuit SMD (surface mount devices) are qualified in compliance to the applicable reflow profiles provided in IPC/JEDEC J-Std-020. The board assembler should not exceed the limits defined in the reflow profile tables of IPC/JEDEC J-Std-020. Moisture Sensitivity Level The Moisture Sensitivity Level (MSL) and peak reflow temperature are indicated on each product packing label. All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 63/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Reliability Monitor Report – Package Stresses QLotNum Stress PkgType Read Date Sample Size Read Point Fails Q037761 Q037979 Q037978 Q039314 Q039313 Q039332 Q039331 Q037895 Q037894 Q037892 Q037891 Q037890 Q037889 Q039345 Q039344 Q039343 Q039357 Q039356 Q039355 Q039342 Q039341 Q039340 Q039354 Q039353 Q039352 Q038699 Q039005 Q039004 Q039003 Q039119 Q039120 Q038541 Q038540 Q038542 Q038310 Q038270 Q039184 Q039183 Q037829 Q037830 Q038763 Q038761 Q038760 Q037522 Q037841 Q037842 Q038679 Q038680 Q038687 HAST Temp Cycle Temp Cycle Temp Cycle Temp Cycle UHAST UHAST UHAST UHAST UHAST Temp Cycle Temp Cycle Temp Cycle UHAST UHAST UHAST UHAST UHAST UHAST Temp Cycle Temp Cycle Temp Cycle Temp Cycle Temp Cycle Temp Cycle Temp Cycle Temp Cycle Temp Cycle Temp Cycle Temp Cycle THB HAST HAST HAST UHAST Temp Cycle UHAST Temp Cycle Temp Cycle THB Temp Cycle Temp Cycle Temp Cycle THB Temp Cycle THB HAST HAST Temp Cycle 4-SDFN-2x2-LF 4-SDFN-2x2-LF 4-SDFN-2x2-LF 6-CLCC-5x3.2-LF 6-CLCC-5x3.2-LF 6-CLCC-5x3.2-LF 6-CLCC-5x3.2-LF 8-SOIC-150-LF 8-SOIC-150-LF 8-SOIC-150-LF 8-SOIC-150-LF 8-SOIC-150-LF 8-SOIC-150-LF 8-SOIC-150mil-LF 8-SOIC-150mil-LF 8-SOIC-150mil-LF 8-SOIC-150mil-LF 8-SOIC-150mil-LF 8-SOIC-150mil-LF 8-SOIC-150mil-LF 8-SOIC-150mil-LF 8-SOIC-150mil-LF 8-SOIC-150mil-LF 8-SOIC-150mil-LF 8-SOIC-150mil-LF 8-SOIC-150mils-LF 8-SOIC-150mils-LF 8-SOIC-150mils-LF 8-SOIC-150mils-LF 10-COL-ODFN-2x2-LF 10-COL-ODFN-2x2-LF 10-MSOP-3mm-LF 10-MSOP-3mm-LF 10-MSOP-3mm-LF 10-MSOP-3x3-LF 10-MSOP-3x3-LF 10-MSOP-3x3-LF 10-MSOP-3x3-LF 10-OLGA-2.85x4.90-LF 10-OLGA-2.85x4.90-LF 10-OLGA-2.85x4.90-LF 10-OLGA-2.85x4.90-LF 10-OLGA-2.85x4.90-LF 10-OQFN-2X2-LF 10-OQFN-2X2-LF 10-OQFN-2X2-LF 10-SDFN-3x3-LF 10-SDFN-3x3-LF 10-SDFN-3x3-LF 02-Jul-15 30-Jul-15 30-Jul-15 20-May-16 20-May-16 25-May-16 25-May-16 01-Jul-15 01-Jul-15 01-Jul-15 09-Jul-15 09-Jul-15 09-Jul-15 12-Feb-16 12-Feb-16 12-Feb-16 13-Feb-16 13-Feb-16 13-Feb-16 20-Feb-16 20-Feb-16 20-Feb-16 21-Feb-16 21-Feb-16 21-Feb-16 22-Jan-16 15-Feb-16 15-Feb-16 15-Feb-16 14-Mar-16 06-Apr-16 26-Jan-16 26-Jan-16 02-Feb-16 25-Sep-15 01-Oct-15 03-Jun-16 03-Jun-16 20-Jul-15 02-Sep-15 15-Mar-16 15-Mar-16 15-Mar-16 17-Jul-15 20-Jul-15 03-Sep-15 28-Dec-15 05-Jan-16 06-Jan-16 78 81 77 27 27 32 27 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 82 77 77 77 80 80 30 30 30 80 80 80 80 30 29 30 30 30 28 84 83 27 27 30 96 500 500 1000 1000 192 192 96 96 96 500 500 500 96 96 96 96 96 96 500 500 500 500 500 500 500 500 500 500 500 1000 96 96 96 96 500 96 500 1500 1000 1500 1500 1500 1000 1500 1000 96 96 500 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 64/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 QLotNum Stress PkgType Read Date Sample Size Read Point Fails Q038686 Q038685 Q038681 Q038718 Q038717 Q038716 Q037992 Q037851 Q037850 Q037849 Q037848 Q037847 Q037846 Q037869 Q037868 Q037867 Q037860 Q037859 Q037858 Q037866 Q037865 Q037864 Q037857 Q037856 Q037855 Q037959 Q037958 Q037957 Q037956 Q037955 Q037954 Q037698 Q037697 Q037696 Q038293 Q038291 Q038253 Q038251 Q038965 Q038964 Q038963 Q038962 Q038961 Q038960 Q039065 Q039064 Q039063 Q038999 Q038998 Temp Cycle Temp Cycle HAST Temp Cycle Temp Cycle Temp Cycle Temp Cycle UHAST UHAST UHAST Temp Cycle Temp Cycle Temp Cycle UHAST UHAST UHAST UHAST UHAST UHAST Temp Cycle Temp Cycle Temp Cycle Temp Cycle Temp Cycle Temp Cycle UHAST UHAST UHAST Temp Cycle Temp Cycle Temp Cycle Temp Cycle Temp Cycle Temp Cycle UHAST UHAST Temp Cycle Temp Cycle UHAST UHAST UHAST Temp Cycle Temp Cycle Temp Cycle Temp Cycle Temp Cycle Temp Cycle Temp Cycle Temp Cycle 10-SDFN-3x3-LF 10-SDFN-3x3-LF 10-SDFN-3x3-LF 10-TDFN-3x3-LF 10-TDFN-3x3-LF 10-TDFN-3x3-LF 14-LGA-5x5-LF 14-SOIC-150-LF 14-SOIC-150-LF 14-SOIC-150-LF 14-SOIC-150-LF 14-SOIC-150-LF 14-SOIC-150-LF 14-SOIC-150-LF 14-SOIC-150-LF 14-SOIC-150-LF 14-SOIC-150-LF 14-SOIC-150-LF 14-SOIC-150-LF 14-SOIC-150-LF 14-SOIC-150-LF 14-SOIC-150-LF 14-SOIC-150-LF 14-SOIC-150-LF 14-SOIC-150-LF 16-SOIC-150-LF 16-SOIC-150-LF 16-SOIC-150-LF 16-SOIC-150-LF 16-SOIC-150-LF 16-SOIC-150-LF 16-SOIC-150mils-LF 16-SOIC-150mils-LF 16-SOIC-150mils-LF 16-SOIC-150mils-LF 16-SOIC-150mils-LF 16-SOIC-150mils-LF 16-SOIC-150mils-LF 16-SOIC-150mils-LF 16-SOIC-150mils-LF 16-SOIC-150mils-LF 16-SOIC-150mils-LF 16-SOIC-150mils-LF 16-SOIC-150mils-LF 16-SOIC-150mils-LF 16-SOIC-150mils-LF 16-SOIC-150mils-LF 16-SOIC-150mils-LF 16-SOIC-150mils-LF 06-Jan-16 06-Jan-16 13-Jan-16 06-Jan-16 06-Jan-16 06-Jan-16 05-Aug-15 05-Jul-15 05-Jul-15 05-Jul-15 15-Jul-15 15-Jul-15 15-Jul-15 31-Jul-15 31-Jul-15 31-Jul-15 31-Jul-15 31-Jul-15 31-Jul-15 13-Aug-15 13-Aug-15 13-Aug-15 13-Aug-15 13-Aug-15 13-Aug-15 07-Jul-15 07-Jul-15 07-Jul-15 17-Jul-15 17-Jul-15 17-Jul-15 01-Jul-15 01-Jul-15 01-Jul-15 27-Aug-15 31-Aug-15 03-Sep-15 11-Sep-15 31-Dec-15 31-Dec-15 31-Dec-15 15-Jan-16 15-Jan-16 15-Jan-16 01-Feb-16 01-Feb-16 01-Feb-16 01-Feb-16 01-Feb-16 30 30 27 45 45 45 85 25 25 25 25 25 25 25 25 25 25 24 25 24 25 25 25 25 25 77 77 77 77 77 77 25 25 25 80 80 80 80 77 77 77 77 77 77 77 77 77 77 77 500 500 96 500 500 500 500 96 96 96 500 500 500 96 96 96 96 96 96 500 500 500 500 500 500 96 96 96 500 500 500 500 500 500 96 96 500 500 96 96 96 500 500 500 500 500 500 500 500 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 2 0 6 0 0 0 0 0 0 0 0 0 0 0 All rights reserved. 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Pg. 65/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 QLotNum Stress PkgType Read Date Sample Size Read Point Fails Q038997 Q038985 Q038986 Q038984 Q038980 Q038979 Q038978 Q038974 Q038973 Q038972 Q038993 Q038992 Q038991 Q037688 Q037687 Q037686 Q038431 Q038430 Q038429 Q038428 Q038427 Q038426 Q038323 Q038324 Q038294 Q038306 Q038254 Q038266 Q038575 Q038573 Q038395 Q038393 Q038567 Q038735 Q039086 Q039085 Q038408 Q038407 Q038513 Q038514 Q038511 Q038512 Q038309 Q038269 Q039180 Q039179 Q038268 Q038308 Q039176 Temp Cycle Temp Cycle Temp Cycle Temp Cycle Temp Cycle Temp Cycle Temp Cycle Temp Cycle Temp Cycle Temp Cycle Temp Cycle Temp Cycle Temp Cycle Temp Cycle Temp Cycle Temp Cycle Temp Cycle Temp Cycle Temp Cycle UHAST UHAST UHAST HAST HAST UHAST UHAST Temp Cycle Temp Cycle UHAST Temp Cycle Temp Cycle Temp Cycle HAST Temp Cycle HAST HAST Temp Cycle Temp Cycle UHAST UHAST HAST HAST UHAST Temp Cycle UHAST Temp Cycle Temp Cycle UHAST UHAST 16-SOIC-150mils-LF 16-SOIC-300mils-LF 16-SOIC-300mils-LF 16-SOIC-300mils-LF 16-SOIC-300mils-LF 16-SOIC-300mils-LF 16-SOIC-300mils-LF 16-SOIC-300mils-LF 16-SOIC-300mils-LF 16-SOIC-300mils-LF 16-SOIC-300mils-LF 16-SOIC-300mils-LF 16-SOIC-300mils-LF 16-SOIC-LF 16-SOIC-LF 16-SOIC-LF 20-QFN-3x3-LF 20-QFN-3x3-LF 20-QFN-3x3-LF 20-QFN-3x3-LF 20-QFN-3x3-LF 20-QFN-3x3-LF 20-QFN-3x3-LF 20-QFN-3x3-LF 20-QFN-4x4-LF 20-QFN-4x4-LF 20-QFN-4x4-LF 20-QFN-4x4-LF 20-QFN-4x4-LF 20-QFN-4x4-LF 20-QFN-5x5-LF 20-QFN-5x5-LF 20-QFN-5x5-LF 20-QFN-5x5-LF 20-QFN-5x5-LF 20-QFN-5x5-LF 20-QSOP-150mils-LF 20-QSOP-150mils-LF 20-QSOP-150mils-LF 20-QSOP-150mils-LF 20-QSOP-150mils-LF 20-QSOP-150mils-LF 20-SLP-4x4-LF 20-SLP-4x4-LF 20-SLP-4x4-LF 20-SLP-4x4-LF 20-TQFN-3x3-LF 20-TQFN-3x3-LF 20-TQFN-3x3-LF 01-Feb-16 12-Jan-16 13-Jan-16 13-Jan-16 14-Jan-16 14-Jan-16 14-Jan-16 14-Jan-16 14-Jan-16 14-Jan-16 01-Feb-16 01-Feb-16 01-Feb-16 06-Jul-15 06-Jul-15 06-Jul-15 11-Sep-15 11-Sep-15 11-Sep-15 11-Sep-15 11-Sep-15 11-Sep-15 30-Sep-15 12-Oct-15 26-Aug-15 03-Sep-15 14-Sep-15 12-Oct-15 08-Dec-15 15-Dec-15 07-Oct-15 07-Oct-15 24-Nov-15 20-Jan-16 19-Mar-16 19-Mar-16 05-Nov-15 05-Nov-15 10-Nov-15 11-Nov-15 11-Nov-15 17-Nov-15 25-Sep-15 01-Oct-15 16-Mar-16 16-Mar-16 10-Aug-15 15-Aug-15 12-Feb-16 77 77 77 77 77 77 77 77 77 77 77 77 77 25 25 25 77 77 77 77 77 76 80 80 80 80 80 80 80 80 30 30 28 30 30 30 85 85 85 85 85 85 80 80 80 80 80 80 80 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 96 96 96 96 96 96 96 500 500 96 500 500 500 96 500 96 96 500 500 96 96 96 96 96 500 96 500 500 96 96 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 All rights reserved. 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Pg. 66/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 QLotNum Stress PkgType Read Date Sample Size Read Point Fails Q039175 Q038304 Q038264 Q039156 Q039155 Q039031 Q039027 Q039026 Q039029 Q039028 Q039021 Q039020 Q039019 Q039030 Q039116 Q039115 Q038297 Q038257 Q038579 Q038522 Q038521 Q038520 Q038577 Q039136 Q039135 Q039364 Q039363 Q038267 Q038307 Q038460 Q038413 Q038412 Q038411 Q039171 Q039172 Q038675 Q038673 Q038225 Q038224 Q038223 Q038222 Q038221 Q038220 Q038217 Q038218 Q038219 Q038014 Q038013 Q038010 Temp Cycle UHAST Temp Cycle UHAST Temp Cycle UHAST UHAST UHAST HAST HAST Temp Cycle Temp Cycle Temp Cycle HAST UHAST Temp Cycle UHAST Temp Cycle UHAST Temp Cycle Temp Cycle Temp Cycle Temp Cycle UHAST Temp Cycle UHAST Temp Cycle Temp Cycle UHAST Temp Cycle Temp Cycle UHAST HAST Temp Cycle UHAST HAST Temp Cycle UHAST UHAST UHAST Temp Cycle Temp Cycle Temp Cycle HAST HAST HAST UHAST UHAST Temp Cycle 20-TQFN-3x3-LF 24-MQFN-4x4-LF 24-MQFN-4x4-LF 24-MQFN-4x4-LF 24-MQFN-4x4-LF 24-QFN-3X3-LF 24-QFN-3X3-LF 24-QFN-3X3-LF 24-QFN-3X3-LF 24-QFN-3X3-LF 24-QFN-3X3-LF 24-QFN-3X3-LF 24-QFN-3X3-LF 24-QFN-3X3-LF 24-QFN-3x3-LF 24-QFN-3x3-LF 24-QFN-4x4-LF 24-QFN-4x4-LF 24-QFN-4x4-LF 24-QFN-4x4-LF 24-QFN-4x4-LF 24-QFN-4x4-LF 24-QFN-4x4-LF 24-QFN-4x4-LF 24-QFN-4x4-LF 24-QFN-4x4-LF 24-QFN-4x4-LF 24-QSOP-150mils-LF 24-QSOP-150mils-LF 24-QSOP-150mils-LF 24-QSOP-150mils-LF 24-QSOP-150mils-LF 24-QSOP-150mils-LF 24-QSOP-150mils-LF 24-QSOP-150mils-LF 24-SOIC-300mils-LF 24-SOIC-300mils-LF 24-TQFN-3x3-LF 24-TQFN-3x3-LF 24-TQFN-3x3-LF 24-TQFN-3x3-LF 24-TQFN-3x3-LF 24-TQFN-3x3-LF 24-TQFN-3x3-LF 24-TQFN-3x3-LF 24-TQFN-3x3-LF 32-QFN-5 x5-LF 32-QFN-5 x5-LF 32-QFN-5 x5-LF 12-Feb-16 21-Aug-15 29-Sep-15 19-Apr-16 19-Apr-16 02-Mar-16 02-Mar-16 02-Mar-16 03-Mar-16 03-Mar-16 08-Mar-16 08-Mar-16 08-Mar-16 10-Mar-16 15-Mar-16 24-Mar-16 12-Aug-15 24-Aug-15 19-Nov-15 20-Nov-15 20-Nov-15 20-Nov-15 28-Nov-15 06-Feb-16 15-Feb-16 17-May-16 24-May-16 10-Aug-15 15-Aug-15 10-Oct-15 23-Oct-15 26-Oct-15 26-Oct-15 25-Feb-16 26-Feb-16 25-Dec-15 31-Dec-15 01-Oct-15 01-Oct-15 01-Oct-15 01-Oct-15 01-Oct-15 01-Oct-15 01-Oct-15 13-Oct-15 19-Oct-15 04-Aug-15 04-Aug-15 05-Aug-15 80 80 80 80 80 25 25 25 30 29 30 30 30 30 80 80 80 80 80 80 80 80 80 80 80 80 80 80 80 75 79 78 78 80 80 78 78 80 80 80 80 80 80 80 80 80 35 35 35 500 96 500 96 500 96 96 96 96 96 500 500 500 96 96 500 96 500 96 500 500 500 500 96 500 96 500 500 96 500 500 96 96 500 96 96 500 96 96 96 500 500 500 96 96 96 96 96 500 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 All rights reserved. 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Pg. 67/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 QLotNum Stress PkgType Read Date Sample Size Read Point Fails Q038009 Q039267 Q039266 Q039265 Q039257 Q039264 Q039263 Q039262 Q039259 Q039258 Q038334 Q038333 Q038332 Q038508 Q038505 Q038504 Q038502 Q038501 Q038506 Q038357 Q038364 Q038361 Q038360 Q038359 Q038363 Q039098 Q039097 Q039095 Q038887 Q039248 Q039247 Q038689 Q038709 Q038733 Q039088 Q039235 Q039234 Q037744 Q038724 Q038723 Q039053 Q037799 Q037794 Q037789 Q037796 Q037801 Q037791 Q037822 Q038292 Temp Cycle UHAST UHAST UHAST HAST Temp Cycle Temp Cycle Temp Cycle HAST HAST UHAST Temp Cycle HAST UHAST Temp Cycle UHAST HAST Temp Cycle HAST Temp Cycle UHAST Temp Cycle UHAST HAST HAST Temp Cycle HAST UHAST Temp Cycle Temp Cycle Temp Cycle Temp Cycle Temp Cycle HAST HAST HAST Temp Cycle HAST Temp Cycle HAST Temp Cycle Temp Cycle Temp Cycle Temp Cycle LTSL LTSL LTSL Temp Cycle UHAST 32-QFN-5 x5-LF 32-QFN-5x5-LF 32-QFN-5x5-LF 32-QFN-5x5-LF 32-QFN-5x5-LF 32-QFN-5x5-LF 32-QFN-5x5-LF 32-QFN-5x5-LF 32-QFN-5x5-LF 32-QFN-5x5-LF 32-TQFP-7x7-LF 32-TQFP-7x7-LF 32-TQFP-7x7-LF 32-TQFP-7x7-LF 32-TQFP-7x7-LF 32-TQFP-7x7-LF 32-TQFP-7x7-LF 32-TQFP-7x7-LF 32-TQFP-7x7-LF 32-UQFN-4x4-LF 32-UQFN-4x4-LF 32-UQFN-4x4-LF 32-UQFN-4x4-LF 32-UQFN-4x4-LF 32-UQFN-4x4-LF 32-UQFN-4x4-LF 32-UQFN-4x4-LF 32-UQFN-4x4-LF 36-MQFN-5x6-LF 36-MQFN-5X6-LF 36-MQFN-5X6-LF 36-SSOP-300mils-LF 36-SSOP-300mils-LF 36-SSOP-300mils-LF 36-SSOP-300mils-LF 36-SSOP-300mils-LF 36-SSOP-300mils-LF 36-WLCSP-3.016x2.891 38-MQFN-5x7-LF 38-MQFN-5x7-LF 40-MQFN-6x6-LF 40-QFN-5X5 40-QFN-5X5 40-QFN-5X5 40-QFN-5X5 40-QFN-5X5 40-QFN-5X5 40-QFN-6X6-LF 40-QFN-6x6-LF 05-Aug-15 19-Apr-16 19-Apr-16 19-Apr-16 19-Apr-16 25-Apr-16 25-Apr-16 25-Apr-16 25-Apr-16 25-Apr-16 23-Sep-15 23-Sep-15 23-Sep-15 11-Nov-15 11-Nov-15 11-Nov-15 11-Nov-15 11-Nov-15 17-Nov-15 29-Sep-15 07-Oct-15 07-Oct-15 07-Oct-15 07-Oct-15 13-Oct-15 24-Mar-16 28-Mar-16 28-Mar-16 04-Mar-16 27-Apr-16 27-Apr-16 05-Jan-16 16-Jan-16 18-Jan-16 29-Mar-16 12-Apr-16 15-Apr-16 01-Jul-15 19-Jan-16 19-Jan-16 21-Mar-16 13-Jul-15 13-Jul-15 13-Jul-15 27-Jul-15 28-Jul-15 28-Jul-15 02-Jul-15 27-Aug-15 35 35 35 35 35 35 35 35 35 35 82 86 82 80 81 82 82 81 82 85 80 85 85 84 85 87 87 87 30 30 30 27 27 27 27 27 27 20 30 29 30 30 30 30 30 30 30 25 80 500 96 96 96 96 500 500 500 96 96 96 500 96 96 500 96 96 500 96 500 96 500 96 96 96 500 96 96 1000 500 500 700 700 96 96 96 700 96 500 96 500 500 500 500 1000 1000 1000 500 96 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 68/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 QLotNum Stress PkgType Read Date Sample Size Read Point Fails Q038302 Q038252 Q038262 Q038571 Q038569 Q038583 Q038581 Q039112 Q039111 Q038298 Q038258 Q039164 Q039163 Q039140 Q039139 Q038301 Q038261 Q039152 Q039151 Q038065 Q038064 Q038063 Q038062 Q038061 Q038060 Q038040 Q038041 Q038039 Q038296 Q038303 Q038256 Q038337 Q038335 Q038263 Q038526 Q038554 Q038584 Q038587 Q038585 Q038556 Q038847 Q039132 Q039131 Q039229 Q039223 Q039252 Q039228 Q039254 Q039256 UHAST Temp Cycle Temp Cycle UHAST Temp Cycle UHAST Temp Cycle UHAST Temp Cycle UHAST Temp Cycle UHAST Temp Cycle UHAST Temp Cycle UHAST Temp Cycle UHAST Temp Cycle UHAST UHAST UHAST Temp Cycle Temp Cycle Temp Cycle HAST Temp Cycle UHAST UHAST UHAST Temp Cycle Temp Cycle HAST Temp Cycle Temp Cycle HAST HAST Temp Cycle HAST Temp Cycle HAST UHAST Temp Cycle Temp Cycle HAST Temp Cycle UHAST HAST UHAST 40-QFN-6x6-LF 40-QFN-6x6-LF 40-QFN-6x6-LF 40-QFN-6x6-LF 40-QFN-6x6-LF 40-QFN-6x6-LF 40-QFN-6x6-LF 40-QFN-6x6-LF 40-QFN-6x6-LF 42-LGA-5x7-LF 42-LGA-5x7-LF 42-LGA-MCM-5x7-LF 42-LGA-MCM-5x7-LF 47-LGA-6x8-LF 47-LGA-6x8-LF 48-MQFN-7x7-LF 48-MQFN-7x7-LF 48-MQFN-7x7-LF 48-MQFN-7x7-LF 48-QFN-7x7-LF 48-QFN-7x7-LF 48-QFN-7x7-LF 48-QFN-7x7-LF 48-QFN-7x7-LF 48-QFN-7x7-LF 48-QFN-7x7-LF 48-QFN-7x7-LF 48-QFN-7x7-LF 48-QFN-7x7-LF 48-QFN-7x7-LF 48-QFN-7x7-LF 48-QFN-7x7-LF 48-QFN-7x7-LF 48-QFN-7x7-LF 48-QFN-7x7-LF 48-QFN-7x7-LF 48-QFN-7x7-LF 48-QFN-7x7-LF 48-QFN-7x7-LF 48-QFN-7x7-LF 48-QFN-7x7-LF 48-QFN-7x7-LF 48-QFN-7x7-LF 48-QFN-7x7-LF 48-QFN-7x7-LF 48-QFN-7x7-LF 48-QFN-7x7-LF 48-QFN-7x7-LF 48-QFN-7x7-LF 03-Sep-15 03-Sep-15 12-Oct-15 08-Dec-15 15-Dec-15 27-Jan-16 27-Jan-16 05-Mar-16 14-Mar-16 12-Aug-15 24-Aug-15 11-Apr-16 11-Apr-16 06-Feb-16 15-Feb-16 03-Sep-15 12-Oct-15 28-Apr-16 28-Apr-16 14-Jul-15 14-Jul-15 14-Jul-15 23-Jul-15 23-Jul-15 23-Jul-15 12-Aug-15 17-Aug-15 18-Aug-15 27-Aug-15 03-Sep-15 05-Sep-15 24-Sep-15 06-Oct-15 12-Oct-15 12-Nov-15 24-Nov-15 30-Nov-15 07-Dec-15 07-Dec-15 07-Dec-15 02-Mar-16 15-Mar-16 24-Mar-16 12-Apr-16 20-Apr-16 21-Apr-16 21-Apr-16 25-Apr-16 26-Apr-16 80 80 80 80 80 80 80 80 80 80 80 80 80 80 80 80 80 80 80 25 26 27 25 28 28 28 28 28 80 80 80 33 28 80 86 30 43 30 30 30 40 80 80 80 80 80 77 80 80 96 500 500 96 500 96 500 96 500 96 500 96 500 96 500 96 500 96 500 96 96 96 500 500 500 96 500 96 96 96 500 500 96 500 500 96 96 500 96 500 96 96 500 500 96 500 96 96 96 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 0 0 0 0 0 0 0 0 0 0 0 0 0 All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 69/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 QLotNum Stress PkgType Read Date Sample Size Read Point Fails Q038300 Q038260 Q039144 Q039143 Q038691 Q038693 Q037909 Q037908 Q039160 Q038004 Q039168 Q039167 Q037446 Q037445 Q037444 Q037437 Q037436 Q037435 Q038052 Q038051 Q038050 Q038049 Q038048 Q038046 Q038045 Q038044 Q038047 Q038189 Q038188 Q038187 Q038669 Q038668 Q038665 Q038671 Q038670 Q038666 Q038209 Q038208 Q038207 Q038205 Q038204 Q038212 Q038211 Q038210 Q038206 Q038903 Q038902 Q038901 Q038642 UHAST Temp Cycle UHAST Temp Cycle Temp Cycle HAST HAST Temp Cycle UHAST HAST UHAST Temp Cycle UHAST UHAST UHAST Temp Cycle Temp Cycle Temp Cycle Temp Cycle Temp Cycle Temp Cycle UHAST UHAST UHAST HAST HAST HAST Temp Cycle Temp Cycle Temp Cycle HAST HAST HAST HAST HAST HAST UHAST UHAST UHAST HAST HAST Temp Cycle Temp Cycle Temp Cycle HAST Temp Cycle Temp Cycle Temp Cycle THB 48-TQFP-7x7-LF 48-TQFP-7x7-LF 48-TQFP-7x7-LF 48-TQFP-7x7-LF 56-MQFN-8x8-LF 56-MQFN-8x8-LF 56-QFN-8X8-LF 56-QFN-8X8-LF 56-QFN-8x8-LF 64-QFN-9x9-LF 64-QFN-9x9-LF 64-QFN-9x9-LF 64-TQFP-10X10-LF 64-TQFP-10X10-LF 64-TQFP-10X10-LF 64-TQFP-10X10-LF 64-TQFP-10X10-LF 64-TQFP-10X10-LF 64-TQFP-10x10-LF 64-TQFP-10x10-LF 64-TQFP-10x10-LF 64-TQFP-10x10-LF 64-TQFP-10x10-LF 64-TQFP-10x10-LF 64-TQFP-10x10-LF 64-TQFP-10x10-LF 64-TQFP-10x10-LF 64-TQFP-10x10-LF 64-TQFP-10x10-LF 64-TQFP-10x10-LF 64-TQFP-10x10-LF 64-TQFP-10x10-LF 64-TQFP-10x10-LF 64-TQFP-10x10-LF 64-TQFP-10x10-LF 64-TQFP-10x10-LF 64-VQFN-9x9-LF 64-VQFN-9x9-LF 64-VQFN-9x9-LF 64-VQFN-9x9-LF 64-VQFN-9x9-LF 64-VQFN-9x9-LF 64-VQFN-9x9-LF 64-VQFN-9x9-LF 64-VQFN-9x9-LF 68-QFN-8x8-LF 68-QFN-8x8-LF 68-QFN-8x8-LF 76-LGA-6x6-LF 27-Aug-15 02-Sep-15 06-Feb-16 15-Feb-16 06-Jan-16 20-Jan-16 21-Jul-15 21-Jul-15 11-Apr-16 26-Aug-15 10-Apr-16 10-Apr-16 20-Jul-15 20-Jul-15 20-Jul-15 04-Aug-15 04-Aug-15 04-Aug-15 24-Aug-15 24-Aug-15 24-Aug-15 29-Aug-15 29-Aug-15 29-Aug-15 29-Aug-15 29-Aug-15 02-Sep-15 11-Nov-15 11-Nov-15 11-Nov-15 12-Dec-15 12-Dec-15 12-Dec-15 18-Dec-15 18-Dec-15 18-Dec-15 23-Sep-15 23-Sep-15 23-Sep-15 23-Sep-15 23-Sep-15 05-Oct-15 05-Oct-15 05-Oct-15 07-Oct-15 07-Feb-16 07-Feb-16 07-Feb-16 20-Jan-16 80 80 80 80 30 28 27 27 80 73 80 80 25 25 25 25 25 25 30 30 30 30 30 30 30 30 30 25 25 25 25 25 25 25 25 25 30 30 30 30 30 30 30 30 30 77 77 77 30 96 500 96 500 500 264 96 700 96 96 96 500 96 96 96 500 500 500 500 500 500 96 96 96 96 96 96 500 500 500 96 96 96 96 96 96 96 96 96 96 96 500 500 500 96 500 500 500 1000 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 70/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 QLotNum Stress PkgType Read Date Sample Size Read Point Fails Q038641 Q038305 Q038265 Q038167 Q038166 Q038173 Q038172 Q038171 Q038378 Q039128 Q039127 Q038629 Q038623 Q038603 Q038703 Q038704 Q038660 Q038706 Q038776 Q038774 Q038662 Q038820 Q038817 Q038823 Q038815 Q038818 Q039087 Q038295 Q038255 Q038549 Q038550 Q038618 Q038617 Q038620 Q038619 Q039124 Q039123 Q037514 Q038299 Q038259 Q039148 Q039147 THB UHAST Temp Cycle UHAST UHAST Temp Cycle Temp Cycle Temp Cycle Temp Cycle UHAST Temp Cycle UHAST HAST Temp Cycle UHAST Temp Cycle Temp Cycle HAST UHAST Temp Cycle HAST UHAST UHAST Temp Cycle Temp Cycle HAST UHAST UHAST Temp Cycle UHAST Temp Cycle UHAST UHAST Temp Cycle Temp Cycle UHAST Temp Cycle HAST UHAST Temp Cycle UHAST Temp Cycle 76-LGA-6x6-LF 80-PBGA-10x10-LF 80-PBGA-10x10-LF 80-PBGA-10x10-LF 80-PBGA-10x10-LF 80-PBGA-10x10-LF 80-PBGA-10x10-LF 80-PBGA-10x10-LF 80-PBGA-10x10-LF 81-WLCSP-4.2x4.2-LF 81-WLCSP-4.2x4.2-LF 84-QFN-12x12-LF 84-QFN-12x12-LF 84-QFN-12x12-LF 84-QFN-12x12-LF 84-QFN-12x12-LF 84-QFN-12x12-LF 84-QFN-12x12-LF 84-QFN-12x12-LF 84-QFN-12x12-LF 84-QFN-12x12-LF 84-QFN-12x12-LF 84-QFN-12x12-LF 84-QFN-12x12-LF 84-QFN-12x12-LF 84-QFN-12x12-LF 84-QFN-12x12-LF 100-LQFP-14x14-LF 100-LQFP-14x14-LF 100-LQFP-14x14-LF 100-LQFP-14x14-LF 100-LQFP-14x14-LF 100-LQFP-14x14-LF 100-LQFP-14x14-LF 100-LQFP-14x14-LF 100-LQFP-14x14-LF 100-LQFP-14x14-LF 112-LFBGA-10x10 120-VFBGA-7x7-LF 120-VFBGA-7x7-LF 120-VFBGA-7x7-LF 120-VFBGA-7x7-LF 20-Jan-16 03-Sep-15 12-Oct-15 12-Nov-15 12-Nov-15 20-Nov-15 20-Nov-15 20-Nov-15 11-Dec-15 02-Mar-16 17-Mar-16 15-Dec-15 15-Dec-15 18-Dec-15 20-Jan-16 28-Jan-16 28-Jan-16 03-Feb-16 12-Feb-16 18-Feb-16 18-Feb-16 19-Feb-16 19-Feb-16 01-Mar-16 01-Mar-16 22-Mar-16 29-Mar-16 18-Sep-15 28-Sep-15 27-Nov-15 02-Dec-15 10-Dec-15 10-Dec-15 15-Dec-15 15-Dec-15 05-Mar-16 14-Mar-16 06-Aug-15 27-Aug-15 02-Sep-15 06-Feb-16 15-Feb-16 30 80 80 25 25 25 25 25 24 80 80 80 75 74 79 75 75 63 79 75 73 80 80 75 74 74 165 78 80 30 30 30 30 30 30 80 80 30 80 80 80 80 1000 96 500 96 96 500 500 500 1000 96 500 192 192 1000 192 1000 1000 192 192 1000 192 192 192 1000 1000 192 192 96 500 96 500 96 96 500 500 96 500 264 96 500 96 500 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. Pg. 71/72 Quarterly Quality & Reliability Report 16Q2_QR_Report-01 Revision History Rev No 01 Description Effective Date Original All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs. 04-Aug-2016 Pg. 72/72

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