STGW45NC60VD
45 A - 600 V - very fast IGBT
Features
■
Low CRES / CIES ratio (no cross conduction
susceptibility)
■
IGBT co-packaged with ultra fast free-wheeling
diode
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Applications
2
■
High frequency inverters
■
UPS
■
Motor drivers
■
Induction heating
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Description
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This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
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Figure 1.
3
1
TO-247 long leads
Internal schematic diagram
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Table 1.
Device summary
Order code
Marking
Package
Packaging
STGW45NC60VD
GW45NC60VD
TO-247 long leads
Tube
March 2008
Rev 1
1/15
www.st.com
15
Contents
STGW45NC60VD
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
........................... 7
2.2
Frequency applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
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STGW45NC60VD
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGE = 0)
600
V
IC(1)
Collector current (continuous) at 25 °C
90
A
IC (1)
Collector current (continuous) at 100 °C
50
A
ICL (2)
Turn-off latching current
220
ICP (3)
Pulsed collector current
220
(s)
Gate-emitter voltage
± 20
VGE
IF
Surge non repetitive forward current
(tp=10 ms sinusoidal)
PTOT
Total dissipation at TC = 25 °C
Tj
A
V
A
120
A
270
W
– 55 to 150
°C
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)
1. Calculated according to the iterative formula:
T
–T
JMAX
C
I ( T ) = ----------------------------------------------------------------------------------------------------C C
R
× V
(T , I )
THJ – C
CESAT ( MAX ) C C
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Operating junction temperature
30
ct
du
ro
Diode RMS forward current at TC = 25 °C
IFSM
A
s
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t
c
2. Vclamp = 80%(VCES), Tj = 150 °C, RG = 10 Ω, VGE= 15 V
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3. Pulse width limited by max. junction temperature allowed
Pr
Table 3.
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case (IGBT) max
0.46
°C/W
Rthj-case
Thermal resistance junction-case (diode) max
1.5
°C/W
Rthj-amb
Thermal resistance junction-ambient max
50
°C/W
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Thermal resistance
3/15
Electrical characteristics
2
STGW45NC60VD
Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 4.
Static
Symbol
Parameter
Collector-emitter
V(BR)CES breakdown voltage
(VGE = 0)
Test conditions
IC = 1 mA
Collector-emitter saturation VGE = 15 V, IC = 30 A
voltage
VGE = 15 V, IC = 30 A,TC=125 °C
VGE(th)
Gate threshold voltage
VCE= VGE, IC=1 mA
ICES
Collector cut-off current
(VGE = 0)
VCE = 600 V
IGES
Gate-emitter leakage
current (VCE = 0)
VGE = ± 20 V
gfs (1)
Forward transconductance
VCE = 15 V, IC= 30 A
Symbol
Cies
Coes
Cres
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Dynamic
Parameter
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Input capacitance
Output capacitance
Reverse transfer
capacitance
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Test conditions
VCE = 25 V, f = 1 MHz, VGE= 0
(see Figure 19)
Qge
VGE = 15 V
2.4
V
V
5.75
V
500
5
µA
mA
±100
nA
20
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Qgc
let
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VCE = 390 V, IC = 30 A,
Total gate charge
Gate-emitter charge
Gate-collector charge
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Qg
V
1.8
1.7
3.75
VCE= 600 V, TC = 125 °C
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
so
600
VCE(sat)
Table 5.
Min. Typ. Max. Unit
Min.
Typ. Max.
S
Unit
290
0
298
59
pF
pF
pF
126
16
46
nC
nC
nC
STGW45NC60VD
Electrical characteristics
Table 6.
Switching on/off (inductive load)
Symbol
td(on)
tr
(di/dt)onf
td(on)
tr
(di/dt)on
tr(Voff)
td(off)
tf
tr(Voff)
td(off)
tf
Parameter
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
RG=10 Ω, VGE = 15 V
(see Figure 18)
VCC = 390 V, IC = 30 A,
RG=10Ω, VGE=15 V
TC=125 °C
VCC = 390 V, IC = 30 A,
Max.
Unit
33
13
2500
ns
ns
A/µs
32
14
2280
ns
ns
A/µs
Parameter
)
(s
Eon (1)
Eoff(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
(1)
Turn-on switching losses
Turn-off switching losses
Total switching losses
od
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178
65
RG=10 Ω, VGE=15 V
VCC = 390 V, IC = 30 A,
RG=10 Ω, VGE=15 V
TC=125 °C
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Test conditions
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(see Figure 18)
Switching energy (inductive load)
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Typ.
(see Figure 18)
Symbol
Eon
Eoff (2)
Ets
Min.
VCC = 390 V, IC = 30 A,
(see Figure 18)
Table 7.
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Test conditions
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Min.
68
238
128
Typ.
Max.
ns
ns
ns
ns
ns
ns
Unit
VCC = 390 V, IC = 30 A
RG= 10 Ω, VGE= 15 V,
(see Figure 20)
333
537
870
µJ
µJ
µJ
VCC = 390 V, IC = 30 A
RG= 10 Ω, VGE= 15 V,
TC= 125 °C
(see Figure 20)
618
1125
1743
µJ
µJ
µJ
1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode
recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as
external diode. IGBTs and diode are at the same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
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Electrical characteristics
Table 8.
STGW45NC60VD
Collector-emitter diode
Symbol
Parameter
VF
Forward on-voltage
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Qrr
Irrm
trr
Qrr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Irrm
Test conditions
Min. Typ.
IF = 30 A
IF = 30 A, TC = 125 °C
IF = 30 A, VR = 50 V,
di/dt =100 A/µs
(see Figure 21)
IF = 30 A, VR = 50 V,
TC= 125 °C,
di/dt =100 A/µs
(see Figure 21)
Max.
2.4
1.8
V
V
45
56
2.55
ns
nC
A
100
290
5.8
ns
nC
A
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Unit
STGW45NC60VD
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2.
Output characteristics
Figure 3.
Transfer characteristics
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Figure 4.
Transconductance
Figure 5.
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Collector-emitter on voltage vs
temperature
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let
Figure 6.
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Collector-emitter on voltage vs
collector current
Figure 7.
Normalized gate threshold vs
temperature
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Electrical characteristics
Figure 8.
STGW45NC60VD
Normalized breakdown voltage vs
temperature
Figure 9.
Gate charge vs gate-emitter voltage
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Figure 10. Capacitance variations
Figure 11. Switching losses vs temperature
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Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector
current
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STGW45NC60VD
Electrical characteristics
Figure 14. Thermal impedance
Figure 15. Turn-off SOA
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Figure 16. Emitter-collector diode
characteristics
Figure 17. IC vs. frequency
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IFM(A)
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120
110
Tj=125°C
(Maximum values)
100
s
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90
80
Tj=125°C
(Typical values)
70
60
)
(s
Tj=25°C
(Maximum values)
50
40
30
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10
VFM(V)
0
0
1
2
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5
6
2.2
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Frequency applications
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For a fast IGBT suitable for high frequency applications, the typical collector current vs.
maximum operating frequency curve is reported. That frequency is defined as follows:
fMAX = (PD - PC) / (EON + EOFF)
●
The maximum power dissipation is limited by maximum junction to case thermal
resistance:
Equation 1
PD = ∆T / RTHJ-C
considering ∆T = TJ - TC = 125 °C - 75 °C = 50 °C
●
The conduction losses are:
9/15
Electrical characteristics
STGW45NC60VD
Equation 2
PC = IC * VCE(SAT) * δ
with 50% of duty cycle, VCESAT typical value @125 °C.
●
Power dissipation during ON and OFF commutations is due to the switching frequency:
Equation 3
PSW = (EON + EOFF) * freq.Typical values @ 125 °C for switching losses are used (test
conditions: VCE = 390 V, VGE = 15 V, RG = 10 Ω). Furthermore, diode recovery energy is
included in the EON (see note 2), while the tail of the collector current is included in the EOFF
measurements (see note 3).
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STGW45NC60VD
3
Test circuit
Test circuit
Figure 18. Test circuit for inductive load
switching
Figure 19. Gate charge test circuit
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Figure 20. Switching waveforms
Figure 21. Diode recovery times waveform
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Package mechanical data
4
STGW45NC60VD
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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STGW45NC60VD
Package mechanical data
TO-247 long leads mechanical data
mm
Dim.
Min.
A
D
E
F
F1
F2
F3
F4
G
H
L
L1
L2
L3
L4
L5
M
V
V2
DIA
Typ.
4.85
2.2
0.4
1
5.16
2.6
0.8
1.4
3
2
1.9
3
2.4
3.4
15.45
19.85
3.7
18.3
14.2
34.05
5.35
2
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16.03
21.09
4.3
19.13
20.3
41.38
6.3
3
5°
60°
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3.55
s
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t
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3.65
V
5
Pr
H
L2
L
DIA
L5
A
L1
L4
F2
F1
F3
L3
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10.9
)-
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Max.
D
F4
V2
F(X3)
M
E
G
=
=
7395426_Rev_D
13/15
Revision history
5
STGW45NC60VD
Revision history
Table 9.
Document revision history
Date
Revision
19-Mar-2008
1
Changes
First release
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STGW45NC60VD
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Please Read Carefully:
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Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
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