VS-GP300TD60S
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Vishay Semiconductors
Dual INT-A-PAK Low Profile “Half Bridge” (Trench PT IGBT), 300 A
Proprietary Vishay IGBT Silicon “L Series”
FEATURES
• Trench PT IGBT technology
• Low VCE(on)
• Square RBSOA
• HEXFRED® antiparallel diode with ultrasoft reverse
recovery characteristics
• Industry standard package
• Al2O3 DBC
• UL approved file E78996
Dual INT-A-PAK Low Profile
• Designed for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
600 V
BENEFITS
IC DC at TC = 104 °C
300 A
• Increased operating efficiency
VCE(on) (typical) at 300 A, 25 °C
1.30 V
• Performance optimized as output inverter stage for TIG
welding machines
VCES
Speed
DC to 1 kHz
Package
DIAP low profile
Circuit
Half bridge
• Direct mounting on heatsink
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
600
V
Collector to emitter voltage
VCES
Continuous collector current
IC (1)
Pulsed collector current
ICM
800
Clamped inductive load current
ILM
800
Diode continuous forward current
Gate to emitter voltage
Maximum power dissipation (IGBT)
RMS isolation voltage
Operating junction and storage temperature range
IF
TC = 25 °C
580
TC = 80 °C
400
TC = 25 °C
219
TC = 80 °C
145
TC = 25 °C
1136
TC = 80 °C
636
VGE
PD
VISOL
TJ, TStg
± 20
Any terminal to case (VRMS t = 1 s, TJ = 25 °C)
A
V
W
3500
V
-40 to +150
°C
Note
(1) Maximum continuous collector current must be limited to 500 A to do not exceed the maximum temperature of terminals
Revision: 20-May-16
Document Number: 95767
1
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VS-GP300TD60S
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter voltage
SYMBOL
VBR(CES)
VCE(on)
TEST CONDITIONS
MIN.
TYP.
MAX.
VGE = 0 V, IC = 500 μA
600
-
-
VGE = 15 V, IC = 150 A
-
1.12
1.21
VGE = 15 V, IC = 300 A
-
1.30
1.45
VGE = 15 V, IC = 150 A, TJ = 125 °C
-
1.03
-
VGE = 15 V, IC = 300 A, TJ = 125 °C
-
1.26
-
V
4.9
6.0
8.8
VCE = VGE, IC = 6.4 mA, TJ = 125 °C
-
3.4
-
Temperature coefficient of threshold voltage VGE(th)/T
VCE = VGE, IC = 6.4 mA, (25 °C to 125 °C)
-
-26
-
mV/°C
Forward transconductance
gfe
VCE = 20 V, IC = 50 A
-
67
-
S
Transfer characteristics
VGE
VCE = 20 V, IC = 300 A
-
11.4
-
V
Collector to emitter leakage current
ICES
VGE = 0 V, VCE = 600 V
-
4.0
150
VGE = 0 V, VCE = 600 V, TJ = 125 °C
-
100
-
Gate threshold voltage
Diode forward voltage drop
Gate to emitter leakage current
VGE(th)
VFM
IGES
VCE = VGE, IC = 6.4 mA
UNITS
μA
IFM = 150 A
-
1.31
1.41
IFM = 300 A
-
1.56
1.75
IFM = 150 A, TJ = 125 °C
-
1.28
-
IFM = 300 A, TJ = 125 °C
-
1.63
-
VGE = ± 20 V
-
-
± 500
nA
UNITS
V
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Turn-on switching energy
SYMBOL
MIN.
TYP.
MAX.
Eon
TEST CONDITIONS
-
6.0
-
Turn-off switching energy
Eoff
-
33
-
Total switching energy
Etot
-
39
-
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
IC = 300 A, VCC = 300 V, VGE = 15 V,
Rg = 1.5 , L = 500 μH, TJ = 25 °C
-
503
-
tr
-
214
-
td(off)
-
600
-
tf
-
547
-
Eon
-
7.2
-
Turn-off switching loss
Eoff
-
55.2
-
Total switching loss
Etot
-
62.4
-
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
IC = 300 A, VCC = 300 V, VGE = 15 V,
Rg = 1.5 , L = 500 μH, TJ = 125 °C
-
476
-
tr
-
209
-
td(off)
-
807
-
tf
-
918
-
RBSOA
TJ = 150 °C, IC = 800 A, VCC = 300 V
VP = 600 V, Rg = 1.5 VGE = 15 V to 0 V,
L = 500 μH
mJ
ns
mJ
ns
Fullsquare
Diode reverse recovery time
trr
Diode peak reverse current
Irr
Diode recovery charge
Qrr
-
Diode reverse recovery time
trr
-
127
-
A
-
13
-
μC
Diode peak reverse current
Irr
Diode recovery charge
Qrr
IF = 300 A, Rg = 1.5 ,
VCC = 300 V, TJ = 25 °C
IF = 300 A, Rg = 1.5 ,
VCC = 300 V, TJ = 125 °C
-
119
-
ns
-
99
-
A
7.3
-
μC
165
-
ns
Revision: 20-May-16
Document Number: 95767
2
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GP300TD60S
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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN.
TJ, TStg
-40
-
-
0.4
-
0.05
-
case to heatsink: M6 screw
4
-
6
case to terminal 1, 2, 3: M5 screw
2
-
4
-
270
-
Operating junction and storage temperature range
IGBT
Junction to case per leg
RthJC
diode
Case to sink per module
RthCS
Mounting torque
Weight
MAX.
UNITS
-
150
°C
-
0.11
°C/W
Nm
g
600
160
140
VGE = 12 V
VGE = 15 V
VGE = 18 V
500
120
400
100
DC
IC (A)
Allowable Case Temperature (°C)
TYP.
80
60
VGE = 9 V
300
200
40
100
20
0
0
0
100
200
300
400
500
600
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
700
IC - Continuous Collector Current (A)
VCE (V)
Fig. 3 - Typical IGBT Output Characteristics, TJ = 125 °C
Fig. 1 - Maximum IGBT Continuous Collector Current vs.
Case Temperature
600
1.6
1.5
500
400 A
1.4
300 A
1.3
VCE (V)
IC (A)
400
300
200
1.2
1.1
1.0
TJ = 25 °C
TJ = 150 °C
100 A
0.9
100
0.8
TJ = 125 °C
0
0.7
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
20
40
60
80
100
120
140
160
VCE (V)
TJ (°C)
Fig. 2 - Typical IGBT Output Characteristics, VGE = 15 V
Fig. 4 - Collector to Emitter Voltage vs. Junction Temperature
Revision: 20-May-16
Document Number: 95767
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VS-GP300TD60S
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300
10
TJ = 150 °C
VCE = 20 V
250
1
TJ = 125 °C
ICES (mA)
IC (A)
200
150
TJ = 125 °C
0.1
0.01
100
TJ = 25 °C
TJ = 25 °C
0.001
50
0
0.0001
3
4
5
6
7
8
9
10
11
12
13
100
200
300
500
600
VCES (V)
VGE (V)
Fig. 5 - Typical IGBT Transfer Characteristics
Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current
600
8.0
7.0
TJ = 25 °C
500
TJ = 25 °C
6.0
400
5.0
4.0
IF (A)
VGEth (V)
400
TJ = 125 °C
3.0
300
200
2.0
100
1.0
0
TJ = 150 °C
TJ = 125 °C
0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
0
8.0
0.4
0.8
1.2
IC (mA)
2.0
2.4
2.8
VF (V)
Fig. 6 - Typical IGBT Gate Threshold Voltage
Fig. 9 - Typical Diode Forward Characteristics
10 000
Allowable Case Temperature (°C)
160
1000
IC (A)
1.6
100
10
1
1
10
100
1000
VCE (V)
Fig. 7 - IGBT Reverse BIAS SOA TJ = 150 °C, VGE = 15V
140
120
100
DC
80
60
40
20
0
0
30
60
90
120
150
180
210
240
IF - Continuous Forward Current (A)
Fig. 10 - Maximum Diode Continuous Forward Current vs.
Case Temperature
Revision: 20-May-16
Document Number: 95767
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VS-GP300TD60S
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Vishay Semiconductors
60
10000
55
50
Switching Time (ns)
45
Energy (mJ)
40
35
Eoff
30
25
20
15
td(off)
tf
1000
td(on)
10
Eon
5
tr
0
100
0
50
100
150
200
250
300
350
0
5
10
IC (A)
15
20
25
30
Rg (Ω)
Fig. 14 - Typical IGBT Switching Time vs. Rg
TJ = 125 °C, VCC = 300 V, IC = 300 A, VGE = 15 V, L = 500 μH
Fig. 11 - Typical IGBT Energy Loss vs. IC
TJ = 125 °C, VCC = 300 V, Rg = 1.5 , VGE = 15 V, L = 500 μH
10000
260
220
tf
1000
200
td(off)
td(on)
trr (ns)
Switching Time (ns)
240
TJ = 125 °C
180
160
100
140
tr
TJ = 25 °C
120
10
100
0
50
100
150
200
250
300
350
200
600
800
1000 1200 1400 1600
dIF/dt (A/μs)
Fig. 12 - Typical IGBT Switching Time vs. IC
TJ = 125 °C, VCC = 300 V, Rg = 1.5 , VGE = 15 V, L = 500 μH
Fig. 15 - Typical Diode Reverse Recovery Time vs. dIF/dt
VCC = 300 V, IF = 300 A
80
70
Eoff
60
50
Irr (A)
Energy (mJ)
400
IC (A)
40
Eon
30
20
10
0
0
5
10
15
20
25
30
140
130
120
110
100
90
80
70
60
50
40
30
20
10
TJ = 125 °C
TJ = 25 °C
200
400
600
800
1000 1200 1400 1600
Rg (Ω)
dIF/dt (A/μs)
Fig. 13 - Typical IGBT Energy Loss vs. Rg
TJ = 125 °C, VCC = 300 V, IC = 300 A, VGE = 15 V, L = 500 μH
Fig. 16 - Typical Diode Reverse Recovery Current vs. dIF/dt
VCC = 300 V, IF = 300 A
Revision: 20-May-16
Document Number: 95767
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16
14
12
TJ = 125 °C
Qrr (μC)
10
8
6
TJ = 25 °C
4
2
0
200
400
600
800
1000 1200 1400 1600
dIF/dt (A/μs)
Fig. 17 - Typical Diode Reverse Recovery Charge vs. dIF/dt
VCC = 300 V, IF = 300 A
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.01
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.001
0.0001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 18 - Maximum Thermal Impedance ZthJC Characteristics - (IGBT)
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 19 - Maximum Thermal Impedance ZthJC Characteristics - (Diode)
Revision: 20-May-16
Document Number: 95767
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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ORDERING INFORMATION TABLE
Device code
VS-
G
P
300
T
D
60
S
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Insulated gate bipolar transistor (IGBT)
3
-
Trench PT IGBT technology
4
-
Current rating (300 = 300 A)
5
-
Circuit configuration (T = half bridge)
6
-
Package indicator (D = dual INT-A-PAK low profile)
7
-
Voltage rating (60 = 600 V)
8
-
Speed / type (S = standard speed IGBT)
CIRCUIT CONFIGURATION
3
4
5
1
6
7
2
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95435
Revision: 20-May-16
Document Number: 95767
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Outline Dimensions
www.vishay.com
Vishay Semiconductors
Dual INT-A-PAK Low Profile
DIMENSIONS in millimeters
2.8 x 0.5
21.9 ± 0.5
15 ± 0.5
7.5
13.5
7.2
16 ± 0.5
M5
screwing depth
max. 8
48 ± 0.5
12
15 ± 0.4
27 ± 0.4
28 ± 0.5
48 ± 0.3
62 ± 1
28 ± 0.5
Ø6
.4
93 ± 0.3
108 ± 1
Revision: 11-Nov-14
Document Number: 95435
1
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Disclaimer

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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Revision: 13-Jun-16
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Document Number: 91000