VS-GA200HS60S1PbF
www.vishay.com
Vishay Semiconductors
INT-A-PAK Half Bridge IGBT
(Standard Speed IGBT), 200 A
FEATURES
• Gen 4 IGBT technology
• Standard: optimized for hard switching speed
• Very low conduction losses
• Industry standard package
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
INT-A-PAK
BENEFITS
• Increased operating efficiency
PRODUCT SUMMARY
• Direct mounting to heatsink
VCES
600 V
IC DC
480 A
• Performance optimized as output inverter stage for TIG
welding machines
VCE(on) at 200 A, 25 °C
1.13 V
Speed
DC to 1 kHz
Package
INT-A-PAK
Circuit
Half bridge



ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
SYMBOL
TEST CONDITIONS
VCES
IC
MAX.
UNITS
600
V
TC = 25 °C
480
TC = 116 °C
200
ICM
Peak switching current
ILM
800
Gate to emitter voltage
VGE
± 20
RMS isolation voltage
VISOL
Maximum power dissipation
Operating junction temperature range
Storage temperature range
PD
A
800
Any terminal to case, t = 1 min
2500
TC = 25 °C
830
TC = 85 °C
430
V
W
TJ
-40 to +150
TStg
-40 to +125
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown voltage
SYMBOL
VBR(CES)
Collector to emitter voltage
VCE(on)
Gate threshold voltage
VGE(th)
Collector to emitter leakage current
ICES
Gate to emitter leakage current
IGES
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
VGE = 15 V, IC = 200 A
-
1.13
1.21
VGE = 15 V, IC = 200 A, TJ = 125 °C
-
1.08
1.18
IC = 0.25 mA
3
4.5
6
VGE = 0 V, VCE = 600 V
-
0.025
1
VGE = 0 V, VCE = 600 V, TJ = 125 °C
-
-
10
VGE = ± 20 V
-
-
± 250
VGE = 0 V, IC = 1 mA
UNITS
V
mA
nA
Revision: 10-Jun-15
Document Number: 94362
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GA200HS60S1PbF
www.vishay.com
Vishay Semiconductors
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Total gate charge
Qg
Gate to emitter charge
Qge
Gate to collector charge
Qgc
Turn-on switching loss
Eon
Turn-off switching loss
Eoff
Total switching loss
Ets
Turn-on switching loss
Eon
Turn-off switching loss
Eoff
Total switching loss
Ets
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
TEST CONDITIONS
MIN.
TYP.
MAX.
IC = 200 A
VCC = 400 V
VGE = 15 V
-
1600
1700
-
260
340
-
580
670
IC = 200 A, VCC = 480 V, VGE = 15 V
Rg = 10 
Freewheeling diode: 30EPH06, TJ = 25 °C
-
30
-
-
50
-
-
80
-
-
34
-
-
104
-
-
138
151
-
32 500
-
-
2080
-
-
380
-
IC = 200 A, VCC = 480 V, VGE = 15 V
Rg = 10 
Freewheeling diode: 30EPH06, TJ = 125 °C
VGE = 0 V
VCC = 30 V
f = 1.0 MHz
UNITS
nC
mJ
mJ
pF
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
TJ
-40
-
150
TStg
-40
-
125
Junction to case per leg
RthJC
-
-
0.15
Case to sink
RthCS
-
0.1
-
case to heatsink
-
-
4
case to terminal 1, 2, 3
-
-
3
-
185
-
Operating junction temperature range
Storage temperature range
Mounting torque
1000
IC - Collector to Emitter Current (A)
IC - Collector to Emitter Current (A)
Weight
VGE = 15 V
500 µs pulse width
TJ = 125 °C
100
TJ = 25 °C
10
0.6
0.8
1.0
1.2
1.4
1.6
UNITS
°C
°C/W
Nm
g
1000
100
TJ = 125 °C
10
TJ = 25 °C
1
4.0
4.5
5.0
5.5
6.0
6.5
7.0
VCE - Collector to Emitter Voltage (V)
VGE - Gate to Emitter Voltage (V)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Transfer Characteristics
7.5
Revision: 10-Jun-15
Document Number: 94362
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GA200HS60S1PbF
www.vishay.com
Vishay Semiconductors
16
VGE - Gate to Emitter Voltage (V)
TC - Case Temperature (°C)
160
140
120
100
80
60
40
20
14
12
10
8
Typical value
6
4
2
0
0
0
100
200
300
400
0
500
300
900
1200
1500
1800
QG - Total Gate Charge (nC)
Maximum DC Collector Current (A)
Fig. 5 - Typical Gate Charge vs. Gate to Emitter Voltage
Fig. 3 - Case Temperature vs. Maximum Collector Current
50
1.6
400 A
1.4
1.2
200 A
120 A
1.0
40
40
60
80
100
120
140
TJ = 25 °C
VCE = 480 V
VGE = 15 V
IC = 200 A
35
Eon typical
30
25
0.8
20
Eoff typical
45
Switching Losses (mJ)
VCE - Collector to Emitter Voltage (V)
600
Freewheeling
diode 30EPH06
20
160
0
10
20
30
40
50
TJ - Junction Temperature (°C)
RG - Gate Resistance (Ω)
Fig. 4 - Typical Collector to Emitter Voltage vs.
Junction Temperature
Fig. 6 - Typical Switching Losses vs. Gate Resistance
80
TJ = 125 °C
VCE = 480 V
VGE = 15 V
VGE = 10 Ω
Switching Losses (mJ)
70
60
50
Eoff typical
Freewheeling
diode 30EPH06
40
30
20
Eon typical
10
0
50
75
100
125
150
175
200
IC - Collector to Emitter Current (A)
Fig. 7 - Typical Switching Losses vs.
Collector to Emitter Current
Revision: 10-Jun-15
Document Number: 94362
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GA200HS60S1PbF
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
GA
200
H
S
60
S
1
PbF
1
2
3
4
5
6
7
8
9
1
-
Vishay Semiconductors product
2
-
Essential part number IGBT modules
3
-
Current rating (200 = 200 A)
4
-
Circuit configuration (H = Half bridge without f/w diode)
5
-
INT-A-PAK
6
-
Voltage code (60 = 600 V)
7
-
Speed/type (S = Standard speed IGBT)
8
-
Assy location Italy
9
-
None = Standard production; PbF = Lead (Pb)-free
CIRCUIT CONFIGURATION
3
3
6, 7
6
7
1
1
4
4, 5
5
2
Functional Diagram
2
Electrical Diagram
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95173
Revision: 10-Jun-15
Document Number: 94362
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
INT-A-PAK IGBT/Thyristor
29 (1.15)
28 (1.10)
9 (0.33)
30 (1.18)
7 (0.28)
DIMENSIONS in millimeters (inches)
Ø 6.5 (0.25 DIA)
80 (3.15)
23 (0.91)
7
6
4
5 (0.20)
5
23 (0.91)
1
3 screws M6 x 10
2
2.8 x 0.8
(0.11 x 0.03)
14.5 (0.57)
35 (1.38)
17 (0.67)
3
66 (2.60)
37 (1.44)
94 (3.70)
Document Number: 95067
Revision: 15-Feb-08
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
Outline Dimensions
www.vishay.com
Vishay Semiconductors
INT-A-PAK IGBT
Ø 6.5
(Ø 0.25)
80 (3.15)
23 (0.91)
14.3
(0.56)
23 (0.91)
5 (0.20)
2.8 x 0.8
(0.11 x 0.03)
14.5
(0.57)
2
3
5
1
66 (2.60)
3 screws M6 x 10
4
35 (1.38)
7
6
17 (0.67)
29 (1.15)
28 (1.10)
9 (0.33)
30
(1.18)
7 (0.28)
DIMENSIONS in millimeters (inches)
37 (1.44)
94 (3.70)
Revision: 27-Mar-13
Document Number: 95173
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Revision: 13-Jun-16
1
Document Number: 91000