VS-GA250SA60S
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Vishay Semiconductors
Insulated Gate Bipolar Transistor
Ultralow VCE(on), 250 A
FEATURES
• Standard: optimized for minimum saturation
voltage and low speed
• Lowest conduction losses available
• Fully isolated package (2500 VAC)
• Very low internal inductance (5 nH typical)
• Industry standard outline
SOT-227
• Designed and qualified for industrial level
• UL approved file E78996
PRODUCT SUMMARY
VCES
VCE(on) (typical) at 200 A, 25 °C
IC at TC = 90 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
600 V
1.33 V
(1)
BENEFITS
250 A
Speed
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, TIG welding, induction heating
DC to 1 kHz
Package
SOT-227
Circuit
Single switch no diode
• Easy to assemble and parallel
• Direct mounting to heatsink
Note
(1) Maximum collector current admitted 100 A to do not exceed the
maximum temperature of terminals
• Plug-in compatible with other SOT-227 packages
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
SYMBOL
VCES
MAX.
UNITS
600
V
TC = 25 °C
400
TC = 90 °C
250
ICM
Repetitive rating; VGE = 20 V, pulse width limited by
maximum junction temperature
400
VCC = 80 % (VCES), VGE = 20 V, L = 10 μH, Rg = 2.0 
IC (1)
Clamped Inductive load current
ILM
Gate to emitter voltage
VGE
Power dissipation
PD
Isolation voltage
TEST CONDITIONS
VISOL
A
400
± 20
V
TC = 25 °C
961
TC = 90 °C
462
Any terminal to case, t = 1 min
2500
V
W
Note
(1) Maximum collector current admitted 100 A to do not exceed the maximum temperature of terminals
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
MIN.
TYP.
MAX.
UNITS
TJ, TStg
-40
-
150
°C
Thermal resistance junction to case
RthJC
-
-
0.13
Thermal resistance case to heatsink
RthCS
Flat, greased surface
-
0.05
-
-
30
-
g
Torque to terminal
-
-
1.1 (9.7)
Nm (lbf.in)
Torque to heatsink
-
-
1.3 (11.5)
Nm (lbf.in)
Junction and storage temperature range
SYMBOL
TEST CONDITIONS
Weight
Mounting torque
Case style
°C/W
SOT-227
Revision: 20-May-16
Document Number: 94704
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER
MIN.
TYP.
MAX.
Collector to emitter breakdown voltage
V(BR)CES
VGE = 0 V, IC = 1 mA
600
-
-
Emitter to collector breakdown voltage
V(BR)ECS (1)
VGE = 0 V, IC = 1.0 A
Collector to emitter voltage
Gate threshold voltage
Temperature coefficient of threshold voltage
Collector to emitter leakage current
Gate to emitter leakage current
SYMBOL
VCE(on)
VGE(th)
VGE(th)/TJ
ICES
IGES
TEST CONDITIONS
18
-
-
IC = 100 A
-
1.10
1.3
IC = 200 A
-
1.33
1.66
-
1.02
-
-
1.32
-
IC = 100 A, TJ = 150 °C
-
1.02
-
IC = 200 A, TJ = 150 °C
-
1.33
-
VCE = VGE, IC = 250 μA
IC = 100 A, TJ = 125 °C
IC = 200 A, TJ = 125 °C
VGE = 15 V
UNITS
V
3.0
4.5
6.0
VCE = VGE, IC = 250 μA, TJ = 125 °C
-
3.1
-
VCE = VGE, IC = 1 mA, 25 °C to 125 °C
-
-12
-
mV/°C
VGE = 0 V, VCE = 600 V
-
20
1000
μA
VGE = 0 V, VCE = 600 V, TJ = 125 °C
-
0.2
-
VGE = 0 V, VCE = 600 V, TJ = 150 °C
-
0.6
10
VGE = ± 20 V
-
-
± 250
nA
MIN.
TYP.
MAX.
UNITS
-
770
1200
-
100
150
-
260
380
mA
Notes
(1) Pulse width  80 μs; duty factor  0.1 %
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Total gate charge (turn-on)
SYMBOL
TEST CONDITIONS
Qg
Gate-to-emitter charge (turn-on)
Qge
Gate-to-collector charge (turn-on)
Qgc
IC = 100 A, VCC = 600 V, VGE = 15 V
Turn-on switching loss
Eon
-
0.55
-
Turn-off switching loss
Eoff
TJ = 25 °C
IC = 100 A
VCC = 480 V
VGE = 15 V
-
25
-
-
25.5
-
-
267
-
tr
Rg = 5.0 
-
42
-
td(off)
L = 500 μH
-
310
-
-
450
-
-
0.67
-
-
43.0
-
-
43.7
-
-
275
-
-
50
-
-
350
-
-
700
-
-
5.0
-
-
16 250
-
-
1040
-
-
190
-
Total switching loss
Etot
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
tf
Turn-on switching loss
Eon
Turn-off switching loss
Eoff
Total switching loss
Etot
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
Internal emitter inductance
tr
TJ = 125 °C
IC = 100 A 
VCC = 480 V
VGE = 15 V
Rg = 5.0 
L = 500 μH
Energy
losses
include tail
and diode
recovery.
Diode used
60APH06
td(off)
tf
LE
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Between lead and
center of die contact
VGE = 0 V , VCC = 30 V, f = 1.0 MHz
nC
mJ
ns
mJ
ns
nH
pF
Revision: 20-May-16
Document Number: 94704
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10
140
ICES - Collector Current (mA)
Allowable Case Temperature (°C)
160
120
100
80
60
40
20
0
0
TJ = 150 °C
1
0.1
TJ = 125 °C
0.01
TJ = 25 °C
0.001
0.0001
100
50 100 150 200 250 300 350 400 450 500
200
300
400
500
600
VCE - Collector-to-Emitter Voltage (V)
Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current
6
1000
VGE = 15 V
VGEth - Threshold Voltage (V)
IC - Collector to Emitter Current (A)
IC - Continuous Collector Current (A)
Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature
100
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
10
1
0.0
5.5
5
TJ = 25 °C
4.5
4
TJ = 125 °C
3.5
3
2.5
2
0.5
1.0
1.5
2.0
2.5
0.20
0.40
0.60
0.80
1.00
Fig. 2 - Typical Collector to Emitter Current Output Characteristics
Fig. 5 - Typical IGBT Threshold Voltage
1000
100
TJ = 150 °C
TJ = 125 °C
10
TJ = 25 °C
1
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
VGE - Gate to Emitter Voltage (V)
Fig. 3 - Typical IGBT Transfer Characteristics
VCE - Collector-to-Emitter Voltage (V)
IC - Continuous Collector Current (mA)
IC - Collector to Emitter Current (A)
VCE - Collector to Emitter Voltage (V)
2.5
Ic = 400 A
2
1.5
Ic = 200 A
1
Ic = 100 A
0.5
0
20
40
60
80
100
120
140
160
TJ - Junction Temperature (°C)
Fig. 6 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, VGE = 15 V
Revision: 20-May-16
Document Number: 94704
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1000
Eoff
Eoff
100
Energy Losses (mJ)
Switching Energy (mJ)
1000
10
Eon
1
100
Eon
10
1
0.1
0.1
25
50
75
100
125
150
175
200
0
225
10
20
30
40
50
IC - Collector Current (A)
Rg (Ω)
Fig. 7 - Typical IGBT Energy Losses vs. IC, TJ = 125 °C,
VCC = 480 V, VGE = 15 V, L = 500 μH, Rg = 5 ,
Diode used: 60APH06
Fig. 9 - Typical IGBT Energy Losses vs. Rg,
TJ = 125 °C, IC = 200 A, VCC = 480 V, VGE = 15 V, L = 500 μH,
Diode used: 60APH06
10
1
tf
td(on)
Switching Time (μs)
Switching Time (μs)
td(off)
0.1
tr
1
td(on)
td(off)
tf
0.1
tr
0.01
0.01
0
25
50
75
0
100 125 150 175 200 225
10
20
40
50
60
Rg (Ω)
IC - Collector Current (A)
Fig. 8 - Typical IGBT Switching Time vs. IC,
TJ = 125 °C, VCC = 480 V, VGE = 15 V, L = 500 μH, Rg = 5 ,
Diode used: 60APH06
ZthJC - Thermal Impedance Junction
to Case (°C/W)
30
Fig. 10 - Typical IGBT Switching Time vs. Rg,
TJ = 125 °C, IC = 200 A, VCC = 480 V, VGE = 15 V, L = 500 μH,
Diode used: 60APH06
1
0.1
0.75
0.50
0.25
0.1
0.05
0.02
DC
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (s)
Fig. 11 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 20-May-16
Document Number: 94704
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250
For both:
Triangular wave:
I
Duty cycle: 50 %
TJ = 125 °C
Tsink = 90 °C
Clamp voltage:
Gate drive as specified
80 % of rated
Power dissipation = 140 W
Load Current (A)
200
150
Square wave:
60 % of rated
voltage
I
100
50
Ideal diodes
0
0.1
1
10
100
f - Frequency (kHz)
Fig. 12 - Typical Load Current vs. Frequency (Load Current = IRMS of Fundamental)
20
VGE - Gate to Emitter Voltage (V)
C - Capacitance (pF)
30 000
VGE = 0 V, f = 1 MHz
Cies = Cge + Cgc, Cce shorted
Cres = Cgc
Coes = Cce + Cgc
24 000
Cies
18 000
Coes
12 000
6000
Cres
VCC = 400 V
IC = 100 A
16
12
8
4
0
0
1
10
100
0
200
400
600
800
VCE - Collector to Emitter Voltage (V)
QG - Total Gate Charge (nC)
Fig. 13 - Typical Capacitance vs. Collector to Emitter Voltage
Fig. 14 - Typical Gate Charge vs. Gate to Emitter Voltage
IC - Collector Current (A)
1000
VGE = 20 V
TJ = 125 °C
100
10
Safe operating area
1
1
10
100
1000
VCE - Collector to Emitter Voltage (V)
Fig. 15 - Turn-Off SOA
Revision: 20-May-16
Document Number: 94704
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VS-GA250SA60S
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Vishay Semiconductors
L
D.U.T.
VC*
RL =
50 V
1000 V
0 V to 480 V
480 V
4 x IC at 25 °C
480 µF
960 V
1
2
* Driver same type as D.U.T.; VC = 80 % of VCE (max)
Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain rated Id
Fig. 16a - Clamped Inductive Load Test Circuit
Fig. 16b - Pulsed Collector Current Test Circuit
IC
L
D.U.T.
Driver*
VC
50 V
1000 V
1
2
3
* Driver same type as D.U.T., VC = 480 V
Fig. 17a - Switching Lost Test Circuit
1
2
90 %
10 %
3
VC
90 %
td (off)
10 %
IC
5%
tf
tr
td (on)
t = 5 µs
Eoff
Eon
Ets = (Eon + Eoff)
Fig. 17b - Switching Loss Waveforms
Revision: 20-May-16
Document Number: 94704
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ORDERING INFORMATION TABLE
Device code
VS-
G
A
250
S
A
60
S
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Insulated Gate Bipolar Transistor (IGBT)
3
-
Gen 4, IGBT silicon
4
-
Current rating (250 = 250 A)
5
-
Circuit configuration (S = single switch, without antiparallel diode)
6
-
Package indicator (A = SOT-227)
7
-
Voltage rating (60 = 600 V)
8
-
Speed/type (S = standard speed)
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
3 (C)
Single switch, no
antiparallel diode
S
Lead Assignment
4
3
1
2
2 (G)
1, 4 (E)
N-channel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95423
Packaging information
www.vishay.com/doc?95425
Revision: 20-May-16
Document Number: 94704
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Outline Dimensions
www.vishay.com
Vishay Semiconductors
SOT-227 Generation II
DIMENSIONS in millimeters (inches)
38.30 (1.508)
37.80 (1.488)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
-A-
4 x M4 nuts
6.25 (0.246)
6.50 (0.256)
12.50 (0.492)
13.00 (0.512)
25.70 (1.012)
24.70 (0.972)
-B-
7.45 (0.293)
7.60 (0.299)
14.90 (0.587)
15.20 (0.598)
R full 2.10 (0.083)
2.20 (0.087)
30.50 (1.200)
29.80 (1.173)
31.50 (1.240)
32.10 (1.264)
4x
2.20 (0.087)
1.90 (0.075)
8.30 (0.327)
7.70 (0.303)
0.25 (0.010) M C A M B M
4.10 (0.161)
4.50 (0.177)
12.30 (0.484)
11.70 (0.460)
-C0.13 (0.005)
25.00 (0.984)
25.50 (1.004)
Note
• Controlling dimension: millimeter
Revision: 02-Aug-12
Document Number: 95423
1
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Disclaimer

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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Revision: 13-Jun-16
1
Document Number: 91000