DESCRIPTION
PACKAGE
The high power HVV1011-500L device is a high
voltage silicon enhancement mode RF transistor
designed for L-band pulsed applications operating
at 1030 MHz & 1090 MHz using a 2.4ms pulse
burst (32 s on/18 s off x 48) repeated every
24ms.
FEATURES
High Power Gain
Excellent Ruggedness
50V Supply Voltage
The device utilizes a RoHS compliant metal
ceramic flanged package with a ceramic lid.
The HV800A package style is qualified for
gross leak test – MIL-STD-883, Method 1014.
ABSOLUTE MAXIMUM RATINGS
Symbol
VDSS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
IDSX
PD2
TS
Drain Current
Power Dissipation
Storage Temperature
TJ
Junction
Temperature
Value
95
-10 to
+10
40
970
-65 to
+150
200
Unit
V
V
A
W
°C
°C
1
JC
Parameter
Thermal Resistance
Max
0.18
The HVV1011-500L device is capable of
withstanding an output load mismatch
corresponding to a 20:1 VSWR at rated output
power over all phase angles and operating
voltage across the frequency band of
operation.
Symbol
LMT1
THERMAL CHARACTERISTICS
Symbol
RUGGEDNESS
Parameter
Load
Mismatch
Tolerance
Test Condition
POUT = 500W
Max
20:1
Units
VSWR
F = 1030 MHz
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Symbol
VBR(DSS)
IDSS
IGSS
GP1
IRL1
1
D
1
PD
BD1
1
2
Parameter
Drain-Source Breakdown
Drain Leakage Current
Gate Leakage Current
Power Gain
Input Return Loss
Drain Efficiency
Pulse Droop
Burst Droop
Conditions
VGS=0V,ID=10mA
VGS=0V,VDS=50V
VGS=5V,VDS=0V
POUT=500W, F=1030
POUT=500W, F=1030
POUT=500W, F=1030
POUT=500W, F=1030
POUT=500W, F=1030
MHz
MHz
MHz
MHz
MHz
Typ
102
<300
<2
16.5
12
51
0.2
0.9
Units
V
A
A
dB
dB
%
dB
dB
Under Pulse Conditions: 32 s on/18 s off x 48, Period = 24ms at VDD = 50V, IDQ = 100mA
Rated at TCASE = 25°C
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200
Specifications are subject to change without notice.
WWW.ADSEMI.COM
PACKAGE DIMENSIONS
ASI
PART NUMBER
JDATE CODE
inches
mm
DRAIN
Note: Drawing is not actual size.
GATE
SOURCE
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