20-*B06IPB006RC01-P953A45*
Target datasheet
flow IPM 1B
600 V / 6 A
Features
flow 1B housing
● Input Rectifier, PFC-Boost with integrated
DC-Capacitor, PFC-Shunt and PFC-gate
driver
● 3 phase inverter with integrated DC Shunt,
gate driver circuit incl. bootstrap circuit and
over current protection
● Sense output of DC-current
● Temperature sensor
Solder pins
Press fit pins
● Conclusive Power Flow, all power connections on one side,
no input output X-ing
Schematic
Target Applications
● Low Power Industrial Drives
● Motor Integrated Fans and Pumps
● AirCon
● Electrical Tools
Types
● 20-1B06IPB006RC01-P953A45
● 20-PB06IPB006RC01-P953A45Y
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
1600
V
12
16
A
150
A
110
A2s
20
30
W
Tjmax
150
°C
VCE
650
V
17
23
A
tp limited by Tjmax
45
A
VCE ≤ 650V, Tj ≤ Top max
45
A
30
45
W
175
°C
Input Rectifier Diode
Repetitive peak reverse voltage
VRRM
DC forward current
IFAV
Surge forward current
IFSM
I2t-value
I2t
Power dissipation
Ptot
Maximum Junction Temperature
Tj=Tjmax
Th=80°C
Tc=80°C
tp=10ms
50 Hz half sine wave
Tj=25°C
Tj=Tjmax
Th=80°C
Tc=80°C
PFC IGBT
Collector-emitter break down voltage
DC collector current
Pulsed collector current
IC
ICpulse
Turn off safe operating area
Power dissipation
Maximum Junction Temperature
copyright Vincotech
Ptot
Tj=Tjmax
Tj=Tjmax
Tjmax
1
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
19 Nov. 2014 / Revision 2
20-*B06IPB006RC01-P953A45*
Target datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
650
V
9
12
A
12
A
16
24
W
Tjmax
175
°C
VRRM
650
V
19
25
A
30
A
PFC Inverse Diode
Peak Repetitive Reverse Voltage
DC forward current
VRRM
IF
Tj=Tjmax
Repetitive peak forward current
IFRM
tp limited by Tjmax
Power dissipation
Ptot
Tj=Tjmax
Maximum Junction Temperature
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
PFC Diode
Peak Repetitive Reverse Voltage
DC forward current
IF
Tj=Tjmax
Repetitive peak forward current
IFRM
tp limited by Tjmax
Power dissipation
Ptot
Tj=Tjmax
Maximum Junction Temperature
Th=80°C
Tc=80°C
Th=80°C
29
Tc=80°C
44
Tjmax
W
175
°C
600
V
7
10
A
tp limited by Tjmax
18
A
VCE ≤ 600V, Tj ≤125°C
18
A
Inverter Transistor
Collector-emitter break down voltage
DC collector current
Pulsed collector current
VCE
IC
ICpulse
Turn off safe operating area
Tj=Tjmax
Th=80°C
Tc=80°C
27
41
5
400
µs
V
Tjmax
175
°C
VRRM
600
V
4
5
A
8
A
8
12
W
175
°C
Power dissipation
Ptot
Tj=Tjmax
Short circuit ratings
tSC
VCC
Tj≤125°C
VGE=15V
Maximum Junction Temperature
Th=80°C
Tc=80°C
W
Inverter Diode
Peak Repetitive Reverse Voltage
DC forward current
IF
Tj=Tjmax
Repetitive peak forward current
IFRM
tp limited by Tjmax
Power dissipation
Ptot
Tj=Tjmax
Maximum Junction Temperature
copyright Vincotech
Tjmax
2
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
19 Nov. 2014 / Revision 2
20-*B06IPB006RC01-P953A45*
Target datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Condition
Symbol
Value
Unit
VCEO
45
V
Collector current
IC
500
Peak collector current
ICM
Base current
IB
100
Peak base current
IBM
200
Tjmax
150
°C
PFC Driver*
Collector-emitter voltage
tP≤10 ms
1000
mA
Maximum Junction Temperature
* for more information see infineon's datasheet BC817
DC - Shunt
Ptot
Tc=25°C
3,2
W
DC forward current
IF
Tc=25°C
10
A
Power dissipation
Ptot
Tc=25°C
9
W
VMAX
Tc=25°C
500
V
20
V
Power dissipation
PFC Shunt
DC link Capacitor
Max.DC voltage
Gate Driver*
VCC common with PFC controller
Supply voltage
VCC
Input voltage (LIN, HIN, EN)
UIN
10
V
UOUT
VCC + 0.5
V
Output voltage (FAULT)
* for more information see infineon's datasheet 6ED003L02-F2
Thermal Properties
Storage temperature
Tstg
-40…+125
°C
Operation temperature under switching condition
Top
-40…+(Tjmax - 25)
°C
4000
V
Creepage distance
min 12,7
mm
Clearance
min 12,7
mm
Insulation Properties
Insulation voltage
Comparative tracking index
copyright Vincotech
Vis
t=2s
DC voltage
CTI
>200
3
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20-*B06IPB006RC01-P953A45*
Target datasheet
Characteristic Values
Parameter
Conditions
Symbol
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
Value
IC [A] or
IF [A] or
ID [A]
Unit
Tj
Min
Typ
Max
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
0,8
1,15
1,10
0,90
0,79
20
26
1,4
Input Rectifier Diode
Forward voltage *
VF
Threshold voltage (for power loss calc. only)
Vto
12
Slope resistance (for power loss calc. only)
rt
12
Reverse current
Ir
Thermal resistance chip to heatsink
12
1500
RthJH
Phase-Change
Material
λ=3,4W/mK
VGE(th)
VGE=VCE
V
V
mΩ
0,7
3,54
mA
K/W
* chip data
PFC IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage*
Collector-emitter cut-off
0,0004
VCE(sat)
15
ICES
0
15
650
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
3,3
4
4,7
1,6
2,2
0,04
120
Gate-emitter leakage current
IGES
Integrated Gate resistor
Rgint
none
Gate resistor
RGate
10
Input capacitance
Cies
Output capacitance
Coss
Reverse transfer capacitance
Crss
Gate charge
QGate
Thermal resistance chip to heatsink
RthJH
20
0
V
V
mA
nA
Ω
Ω
9300
f=1MHz
0
25
Tj=25°C
pF
24
4
±15
520
15
Tj=25°C
Phase-Change
Material
λ=3,4W/mK
38
nC
3,18
K/W
* chip data
PFC Inverse Diode
Diode forward voltage
Thermal resistance chip to heatsink
VF
RthJH
6
Tj=25°C
Tj=125°C
Phase-Change
Material
λ=3,4W/mK
1,23
1,55
1,87
V
K/W
3,70
PFC Diode
Forward voltage *
Reverse leakage current
Thermal resistance chip to heatsink
VF
15
Irm
RthJH
650
Phase-Change
Material
λ=3,4W/mK
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,35
1,77
0,94
V
µA
3,27
K/W
69
mΩ
* chip data
PFC Shunt
R1 value
copyright Vincotech
R
4
19 Nov. 2014 / Revision 2
20-*B06IPB006RC01-P953A45*
Target datasheet
Characteristic Values
Parameter
Conditions
Symbol
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
Value
IC [A] or
IF [A] or
ID [A]
Unit
Tj
Min
Typ
Max
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,88
2,10
2,42
Inverter Transistor
Collector-emitter saturation voltage*
VCE(sat)
6
0
Collector-emitter cut-off current incl. Diode
ICES
0
600
Gate-emitter leakage current
IGES
20
0
0
25
Input capacitance
Cies
Output capacitance
Coss
Reverse transfer capacitance
Crss
Thermal resistance chip to heatsink
RthJH
0,002
120
V
mA
nA
470
f=1MHz
Tj=25°C
pF
24
14
Phase-Change
Material
λ=3,4W/mK
3,55
K/W
* chip data
Inverter Diode
Diode forward voltage *
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink
VF
4
IRRM
trr
Qrr
Rgon=0 Ω
15
400
di(rec)max
/dt
Erec
RthJH
5
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Phase-Change
Material
λ=3,4W/mK
1
1,97
1,94
3
4
222
335
0,23
0,46
453
180
0,07
0,13
2,6
V
A
ns
nC
A/µs
mWs
12,20
K/W
35
mΩ
100
nF
* chip data
DC - Shunt
R2 value
Tj=25°C
R
DC link Capacitor
C value
copyright Vincotech
C
5
19 Nov. 2014 / Revision 2
20-*B06IPB006RC01-P953A45*
Target datasheet
Characteristic Values
Parameter
Conditions
Symbol
VGE [V] or
VGS [V]
Vr [V] or
VCE [V] or
VDS [V]
Value
IC [A] or
IF [A] or
ID [A]
Unit
Tj
Min
Typ
Max
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
13
15
17,5
1,3
2
Gate Driver
Supply voltage
VCC
Quiescent Vcc supply current
IQCC
Input voltage (LIN, HIN, EN)
VIN
Input voltage (GATE)
VLIN=0V; VHIN=3,3V
VGATE
Logic "0" input voltage (LIN, HIN)
VIH
Logic "1" input voltage (LIN, HIN)
VIL
VCC = 15V
Positive going threshold voltage (EN)
VEN, TH+
Negative going threshold voltage (EN)
VEN, TH-
Input clamp voltage (LIN, HIN, EN)
ITRIP positive going threshold
VIN, CLAMP IIN = 4mA
VIT, TH+
Input bias current LIN high
ILIN+
VLIN = 3,3V
Input bias current LIN low
ILIN-
VLIN = 0V
Input bias current HIN high
IHIN+
VHIN = 3,3V
Input bias current HIN low
IHIN-
VHIN = 0V
Input bias current EN high
IEN+
VHIN = 3,3V
Output voltage (FAULT)
Low on resistor of pull down trans. (FAULT)
VFLT
RON, FLT
Pulse width for ON or OFF
tIN
Turn-on propagation delay (LIN, HIN)
tON
Turn-off propagation delay (LIN, HIN)
tOFF
FAULT reset time
tRST
Fixed deadtime between high and low side
tDT
VFAULT=0.5 V
VLIN/HIN = 0V or 3,3V
VLIN/HIN = 0V or 3,3V
VLIN/HIN = 0V & 3,3V
0
mA
5
0
15
1,7
2,1
2,4
0,7
0,9
1,1
1,9
2,1
2,3
1,1
1,3
1,5
9
10,3
12
380
445
510
70
100
110
200
70
100
110
200
45
120
VCC
0
45
100
1
V
mV
µA
V
Ω
µs
400
530
800
360
490
760
4
150
V
ns
ms
310
ns
Thermistor
Rated resistance
R
Deviation of R25
∆R/R
Tj=25°C
Tc=100°C
Power dissipation
P
Tc=100°C
Power dissipation constant
5
%
200
mW
Tj=25°C
2
mW/K
K
B-value
B(25/50)
Tol. ±3%
Tj=25°C
3950
B-value
B(25/100)
Tol. ±3%
Tj=25°C
3998
Vincotech NTC Reference
Ω
22000
-5
Tj=25°C
K
B
PFC Driver
Rb
100
Ω
Base pull down resistor
Rbpd
2,7
KΩ
Thermal Resistance Junction - heat sink
RthJS
≤105
K/W
Base resistor
DC Characteristics
hFE
IC=100 mA, VCE=1 V
IC=300 mA, VCE=1 V
Collector-emitter saturation voltage
VCEsat
IC=500 mA, IB=50 mA
Base emitter saturation voltage
VBEsat
DC current gain
160
100
250
Tj=25°C
400
0,7
V
1,2
AC Characteristics
Transition frequency
fT
IC=50 mA, VCE=5 V, f=100 MHz
Collector-base capacitance
Ccb
f=1 Mhz, VBE=10 V
Emitter-base capacitance
Ceb
VEB= 0,5 V, f=1 MHz
170
Tj=25°C
MHz
6
pF
copyright Vincotech
60
6
19 Nov. 2014 / Revision 2
20-*B06IPB006RC01-P953A45*
Target datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
Ordering Code
in DataMatrix as
in packaging barcode as
without thermal paste 17mm housing
without thermal paste 17mm housing pressfit pins
20-1B06IPB006RC01-P953A45
20-PB06IPB006RC01-P953A45Y
P953A45
P953A45Y
P953A45
P953A45Y
Outline
Pin
Pin table
X
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
45
42
39
36
33
30
27
24
21
18
15
12
9
6
3
0
-0,2
4,8
9,8
14,8
19,8
22,5
25,2
30,2
35,2
40,2
45,2
Y
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
26,4
26,4
26,4
26,4
26,4
26,4
26,4
26,4
26,4
26,4
26,4
Pinout
copyright Vincotech
7
19 Nov. 2014 / Revision 2
20-*B06IPB006RC01-P953A45*
Target datasheet
PRODUCT STATUS DEFINITIONS
Datasheet Status
Target
Product Status
Definition
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in any
manner without notice. The data contained is exclusively
intended for technically trained staff.
DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
8
19 Nov. 2014 / Revision 2