2016 General Europractice MPW runs
Schedule and Prices
Accessible for universities, research institutes and companies
Version 160826– v16
www.europractice-ic.com
Dear customer,
Please note that indicated dates are gds-in deadlines. If you want to participate onto one of below listed shuttles, please make
sure to notify us about 4 weeks before this date to ensure a seat is reserved for you. You can send your notification mail to :
For
For
For
For
For
tsmc technologies : eptsmc@imec.be
umc technologies : epumc@imec.be
xfab technologies : epxfab@imec.be
ON Semiconductor technologies : greta.milczanowska@imec.be
ams technologies :
If your service center is imec : ams_support@imec.be
If your service center is fraunhofer : virtual-asic@iis.fraunhofer.de
ON Semiconductor (formerly AMIS)
ON Semi 0.7µ C07M-D 2M/1P & ON Semi 0.7µ
C07M-A 2M/1P/PdiffC/HR
ON Semi 0.5µ CMOS EEPROM C5F & C5N
ON Semi 0.35µ C035U 4M (3M & 5M optional)
only thick top metal
ON Semi 0.7µ C07M-I2T100 100 V - 2M & 3M
options
ON Semi 0.35µ C035 - I3T80U 80 V 4M - 3M
optional (5M on special request)
ON Semi 0.35µ C035 - I3T50U 50 V 4M - 3M
optional (5M on special request)
ON Semi 0.35µ C035 - I3T50U (E) 50 V 4M - 3M
optional (5M on special request)
ON Semi 0.35µ C035 - I3T25U 3.3/25 V 4M (3M
& 5M optional) only thick top metal
ONC18MS
(0.18 µm - 1.8/3.3 V - 15V DMOS - 5LM - MiMC
- ESD - HiR - EPI)
ONC18MS-LL (=ONC18MS + High Vt)
ONC18HPA (= ONC18MS + DNW + Zener +
Stacked MiMC + Native Dev + Schottky)
ONC18-I4T 45/70V HV CMOS
ams
J
IHP SGB25V 0.25µ SiGe:C Ft=75GHz@BVCEO
2.4V
IHP SGB25VGD 0.25µ SiGe:C Ft=75GHz@BVCEO
2.4V + RF HV-LDMOS GD-Module 22V
IHP SG25H1 0.25µ SiGe:C
Ft/Fmax=190GHz/220GHz 5M/MIM
IHP SG25H3P 0.25µ Complementary SiGe:C
Ft/Fmax (npn)110/180GHz / (pnp)90/120GHz
5M/MIM
IHP SG25H3 0.25µ SiGe:C Ft/Fmax=
110/180GHz 5M/MIM
IHP SG25H4 0.25µ SiGe:C Ft/Fmax=
200/220GHz 5M/MIM
SG25H_EPIC (based on SG25H4)
IHP SG13S SiGe:C Bipolar/Analog/CMOS
Ft/Fmax= 250/300GHz 7M/MIM
IHP SG13C SiGe:C CMOS 7M/MIM
M
18
J
A
O
13
N
D
2
29
4
11
S
16
13
29
14
12
14
16
2
12
10
7
6
5
5
7
6
5
5
8
F
J
13
25
11
J
M
29
8
J
A
29
18
ams 0.35µ CMOS C35B4C3 4M/2P/HR/5V IO
25
ams 0.35µ CMOS C35OPTO 4M/2P/5V IO
ams 0.35µ HV CMOS H35B4D3 120V 4M
ams 0.35µ SiGe-BiCMOS S35 4M/4P
ams 0.18µ CMOS C18 6M/1P/MIM/1.8V/5V
ams 0.18µ HV CMOS H18 50V/20V/5V/1.8V/
6M/MIM
Bottom Anti Reflective Coating (BARC) Diode for
ams 0.35µ CMOS C35OPTO 4M/2P/5V IO
Wafer Level Chip Scale Package for ams 0.35µ
CMOS C35B4C3 4M/2P/HR/5V IO
Note: Customers making use of WLSCP have to send in their
IHP
F
18
25
M
A
4
M
18
18
J
J
13
2
12
14
16
3
1
16
3
1
16
3
1
16
3
1
A
S
1
1
15
26
O
N
15
29
22
23
22
28
22
23
22
28
18
1
21
18
1
21
6
D
21
21
31
12
12
design gds file two weeks before the indicated deadline
F
M
A
M
J
J
A
25
1
25
1
25
2
S
O
N
D
31
1
31
25
2
25
2
31
1
31
31
29
29
5
29
29
5
IHP SG13G2 SiGe:C Bipolar/Analog Ft/Fmax=
29
300/500GHz 7M/MIM
IHP SG25 PIC (Photonics, Ge Photo-diode, BEOL)
IHP BEOL SG25 (M1 and Metal Layers Above) +
RF-MEMS + LBE
IHP BEOL SG13 (M1 and Metal Layers Above) +
LBE + Cu
Bumping available for all IHP technologies with extra charge, limited to 200 bumps
X-FAB
J
F
M
29
5
30
30
27
A
M
J
J
A
S
O
N
D
XH018 0.18µ HV NVM CMOS E-FLASH *
2
22
25
13
29
24
XT018 0.18µ HV SOI CMOS **
1
16
12
XS018 0.18µ OPTO***
14
* Process modules included : LPMOS, ISOMOS, NVM, HVMOS, DMOS, MIM, MRPOLY, SCHOTTKY, OPT3, LVT, FLASH, MET3, METMID, MET4, MET5,
PHOTODIO. Other process modules are optional.
** Process modules included : MIM, LP5MOS, 1XN, 1XP, MET3, MET4, MET5, METMID, HVN, HVP, DTI, NBUR, HWC, HRPOLY, PSUB, DNC, DPC. Other
process modules are optional.
*** Process modules included : ISOMOS, MIM, MRPOLY, MET3, MET4, MET5, METMID, MOS3LP, BCH, 4TPIX, MOSLP, SFLATPV, PPDB, LVTN3D. Other
process modules are optional.
TSMC
J
F
M
A
M
J
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A
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O
N
D
TSMC 0.18 CMOS Logic or Mixed-Signal/RF,
General
6
3,24
9,30
13,27
11,28
8,29
6,27
3,24
7,28
5,26
2,30
7
9
30
TSMC 0.18 CMOS High Voltage Mixed-Signal
(CV018LD 1.8/3.3/32V)
TSMC 0.18 CMOS High Voltage BCD Gen 2
(1.8V/5V...70V)
TSMC 0.13 CMOS Logic or Mixed-Signal/RF,
General or Low Power (8-inch)
TSMC 0.13 CMOS Logic or Mixed-Signal/RF,
General or Low Power (12-inch)
TSMC 90nm CMOS Logic or Mixed-Signal/RF,
General or Low Power
TSMC 65nm CMOS Logic or Mixed-Signal/RF,
General or Low Power
TSMC 40nm CMOS Logic or Mixed-Signal/RF,
General or Low Power (no triple gate oxide)
TSMC 28nm CMOS Logic, HPL (HKMG)
4
24
9
4
16
11
11
TSMC 28nm CMOS Logic, LP (SION)
(reserve 4 months in advance)
TSMC 28nm CMOS Logic, HPM (HKMG)
(reserve 4 months in advance)
6
7
27
7
13
20
6
7
1,29
27
7,28
26
23
15
13
6
(reserve 4 months in advance)
3
2
4
9
7
28
2
9
2,30
27
3,17
23
20
18
22
20
24
20
19
30
6
3
2
6
4
1
6
3
14
5
2
7
6
3
2
6
4
1
6
3
14
5
2
7
6
3
2
6
4
1
6
3
14
5
2
7
M
J
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A
S
O
N
D
Data in RED are preliminary scheduled
UMC
UMC
UMC
UMC
UMC
UMC
UMC
UMC
UMC
UMC
UMC
UMC
UMC
J
L180 Logic GII
L180 Mixed-Mode/RF
L180 Logic Low Leakage
L180 EFLASH Logic GII
CIS180 Image Sensor 1P4M – CONV diode
CIS180 Image Sensor 2P4M – ULTRA diode
CIS11 – image sensor
L130 Logic
L130 Mixed-Mode/RF
L110AE Logic/Mixed-Mode/RF
L65N Logic/Mixed-Mode/RF - SP
L65N Logic/Mixed-Mode/RF - LL
F
M
A
7
7
7
30
30
30
4
12
12
12
11
4
4
11
5
5
5
22
14
17
17
30
4
22
22
22
8**
8
21*
21*
2
2**
2
4
4
11
20*
20*
options regular runs
UMC L180 Logic GII
Core
1.8V
IO
3.3V
MIM
1fF
UMC L180 Mixed-Mode/RF
1.8V
3.3V
1fF
UMC L180 Logic Low Leakage
1.8V
3.3V
/
topmetal
8kA - Max. 1P6M
8kA/20kA
Max. 1P6M
8kA - Max. 1P6M
UMC L180 EFLASH logic GII
1.8V
3.3V
/
8kA - Max. 2P6M
UMC CIS18 – CONV
1.8V
3.3V
1fF
5kA – Max.1P4M
UMC CIS18 – ULTRA
1.8V
3.3V
1fF
5kA – Max.2P4M
UMC CIS11 - Image Sensor - 2P4M
1.5V
3.3V
1Ff
UMC L130 Logic
1.2V
3.3V
1fF/1.5fF/2fF
UMC L130 Mixed-Mode/RF
1.2V
3.3V
1fF/1.5fF/2fF
UMC L110AE Logic/Mixed-Mode/RF
1.2V
1.8V/2.5V/3.3V/5V
1fF/1.5fF/2fF
UMC L65N Logic/Mixed-Mode/RF - SP
1.0V,
1.1V
1.8V/2.5V/
2.5V_OD3.3V/3.3V
2fF
5kA
Max. 2P4M
8kA
Max. 1P8M2T
8kA/20kA
Max. 1P8M2T
8kA/12kA/20kA/40kA
Max. 1P8M
8kA/32.5kA
Max. 1P10M
1**
1
12
19*
19*
21
7
7
7
31**
31
5
5
special remarks
Redistribution and bumping on request
Redistribution and bumping on
request.
Cannot be combined with Logic GII
Please get in touch with imec for the
EEFLASH macro information.
Colorfilters and microlenses included
Colorfilters and microlenses included.
Ultra diode is pinned. PIP capacitor
possible.
Colorfilters and microlenses included.
PIP capacitor possible.
Two types (out of 3) of devices can be
combined: HS,LL, SP. Redistr. to Al.
Two types (out of 3) of devices can be
combined: HS,LL, SP. Redistr. to Al.
Metalization is Aluminium. 5V device
possible! HS,LL,SP can be combined.
Metallization recommendation on
request. Redistribution to Aluminium.
* = 32kA topmetal, LVT, MIM in
development. 2.5V_OD3.3V not
available. ** = 3.3V not available.
Please check with us before tapeout.
UMC L65N Logic/Mixed-Mode/RF - LL
1.2V
1.8V/2.5V/
2.5V_OD3.3V/3.3V
GLOBALFOUNDRIES
GLOBALFOUNDRIES 55 nm
GLOBALFOUNDRIES 40 nm
mmWave
GLOBALFOUNDRIES 28 nm
GLOBALFOUNDRIES 22 nm
Data in RED are preliminary
J
LPe/LPx-NVM/LPx-RF
LP/LP-RF/RF-
M
14
J
A
S
8
9
18
2
25
O
N
4
14
19
D
5
7
1
J
ePIXfab-imec
J
F
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A
M
J
J
A
S
O
N
D
2
22
21
23
F
ePIXfab-imec SiPhotonics Passives
ePIXfab-imec SiPhotonics ISIPP25G+
ePIXfab-imec SiPhotonics ISIPP50G

ISIPP25G = advanced passives + Modulator + Detector

ISIPP25G+ = ISIPP25G + LPAS + M2 + edge coupler
J
20
24
10
M
A
M
J
J
22
20
A
S
O
N
D
N
D
N
D
N
D
15
31
31
F
M
A
M
J
J
A
S
15
J
15
23
30
5
ePIXfab-LETI SiPhotonics Passives + Heater
F
M
Micralyne MicraGEM-Si
Teledyne Dalsa
J
6
22
5
Micralyne
M
4
11
METALMUMPS
PolyMUMPS
SOIMUMPS
PIEZOMUMPS
ePIXfab-LETI
A
1
SLP/SLP-RF/HPP
FDX
scheduled
MEMSCAP
2fF
F
Metallization recommendation on
request. Redistribution to Aluminium.
* = 32kA topmetal in development.
Please check with us before tapeout.
8kA/32.5kA
Max. 1P10M
O
18
A
M
J
J
A
S
O
M
J
J
A
S
O
13
J
Teledyne Dalsa MIDIS
F
M
A
18
16
2016 General Europractice MPW runs – Pricelist
Prices are valid for MPW runs starting after 1 January 2016
Accessible for universities, research institutes and companies
Prices and conditions may change at any time without prior notice
STANDARD price : normal price
DISCOUNTED price : only applies to EUROPRACTICE registered (who paid their annual full membership fee) Academic and Research Members from all
28 EU countries and Albania, Armenia, Azerbaijan, Belarus, Bosnia-Herzegovina, Georgia, Iceland, Israel, Liechtenstein, Former Yugoslav Republic of
Macedonia, Moldova, Montenegro, Norway, Russia, Switzerland, Turkey, Serbia and Ukraine who submit designs for educational or publicly funded
research use only
Prices are given for the delivery of unpackaged, untested prototypes. Encapsulation and testing will be charged separately.
Number of prototypes
OnSemi, XFAB : 30 samples
ams , IHP : 40 samples
UMC : 0.18um, 0.13um, 0.11um : 50 samples
UMC : 65nm : 90 samples
TSMC : 8-inch : 40 samples, 12-inch : 100 samples
Imec SiPhotonics passives :25 samples, ISIPP25G+ : 20 samples
miniphotonics : 10 samples
MEMSCAP : 15 samples
GLOBALFOUNDRIES : 50 samples
If you need more prototype samples, please ask for a quotation
Plots
You can order plots/PDF of your designs
first plot/PDF costs 50 euro
next plots cost 20 euro each
Packaging : see separate prices and available packages
PRICES IN EURO
ams
ams 0.35µ CMOS C35B4C3 4M/2P/HR/5V IO
ams 0.35µ CMOS C35OPTO 4M/2P/5V IO
ams 0.35µ HV CMOS H35B4D3 120V 4M
ams 0.35µ SiGe-BiCMOS S35 4M/4P
ams 0.18µ CMOS C18 6M/1P/MIM/1.8V/5V
ams 0.18µ HV CMOS H18 6M/50V/20V/5V/1.8V/MIM
BARC Diode for ams 0.35µ CMOS C35OPTO 4M/2P/5V IO
Wafer Level Chip Scale Package for ams 0.35µ CMOS C35B4C3
STANDARD
Price/mm2
DISCOUNTED
Price/mm2
640 4
800 4
880 4
880 4
1100 4
1200 4
One-off fee of 13800
One-off fee of 6150
580 4
700 4
800 4
800 4
1050 4
1100 4
One-off fee of 13800
One-off fee of 6150
ON Semiconductor (formerly AMIS)
ON Semi 0.7µ C07M-D 2M/1P
ON Semi 0.7µ C07M-A 2M/1P/PdiffC/HR
ON Semi 0.5µ CMOS EEPROM C5F & C5N – 200 mm
ON Semi 0.35µ C035U 4M (default) including analog options
ON Semi 0.35µ C035U 3M (optional) including analog options
ON Semi 0.35µ C035U 5M (optional) including analog options
ON Semi 0.7µ C07M-I2T100 100 V - 2M
ON Semi 0.7µ C07M-I2T100 100 V - 3M
ON Semi 0.35µ C035 - I3T80U 80 V 3M
ON Semi 0.35µ C035 - I3T80U 80 V 4M
ON Semi 0.35µ C035 - I3T80U 80 V 5M
ON Semi 0.35µ C035 - I3T50U (or E) 50 V 3M
ON Semi 0.35µ C035 - I3T50U (or E) 50 V 4M
ON Semi 0.35µ C035 - I3T50U (or E) 50 V 5M
ON Semi 0.35µ C035 – I3T25U 3.3/25 V 3M (optional)
ON Semi 0.35µ C035 – I3T25U 3.3/25 V 4M (default)
ON Semi 0.35µ C035 – I3T25U 3.3/25 V 5M (optional)
ONC18MS 0.18 µm - 1.8/3.3 V - 15V DMOS - 5LM - MiMC - ESD - HiR - EPI
ONC18MS-LL (=ONC18MS + High Vt)
ONC18HPA (= ONC18MS + DNW + Zener + Stacked MiMC + Native Dev +
Schottky)
ON 0.18 µm I4T 40/75 V - 5LM – DTI (=ONC18MS + 30V + 45V + 70V
DMOS)
DISCOUNTED
Price/mm2
300 2
350 2
1150 2
720 1
700 1
800 1
525 1
560 1
850 1
925 1
1050 1
850 1
925 1
1050 1
750 1
770 1
800 1
1,100 1
1,225 1
270 2
315 2
1100 2
670 1
650 1
750 1
485 1
525 1
800 1
875 1
995 1
800 1
875 1
995 1
700 1
720 1
750 1
1,050 1
1,195 1
1,350
1
1,290
1
1,540
1
1,480
1
STANDARD
Price/mm2
IHP
IHP SGB25V 0.25µ SiGe:C Ft=75GHz@BVCEO 2.4V
IHP SGB25VGD 0.25µ SiGe:C Ft=75GHz@BVCEO 2.4V + RF HV-LDMOS GDModule 22V
IHP SG25H1 0.25µ SiGe:C Ft/Fmax=190GHz/220GHz 5M/MIM
IHP SG25H3P 0.25µ Complementary SiGe:C Ft/Fmax (npn)110/180GHz /
(pnp)90/120GHz 5M/MIM
IHP SG25H3 0.25µ SiGe:C Ft/Fmax= 110/180GHz 5M/MIM
IHP SG25H4 0.25µ SiGe:C Ft/Fmax= 200/220GHz 5M/MIM
SG25H_EPIC (based on SG25H4)
IHP SG13G2 SiGe:C Bipolar/Analog Ft/Fmax= 300/500GHz 7M/MIM
IHP SG13S SiGe:C Bipolar/Analog/CMOS Ft/Fmax= 250/300GHz 7M/MIM
IHP SG13C SiGe:C CMOS 7M/MIM
BEOL SG25 (M1 and Metal Layers Above, for passive structures)
BEOL SG13 (M1 and Metal Layers Above, for passive structures)
IHP SG25 PIC (Photonics devices, Ge Photo-diode, BEOL)
bumping for all IHP technologies
localized back side etching for all IHP technologies (per design)
RF-MEMS switch for SG13 (IP)
TSV to ground (SG25H4)
X-FAB
X-FAB XH018 0.18µ HV NVM CMOS E-FLASH (MET3, METMID)
X-FAB XH018 0.18µ HV NVM CMOS E-FLASH (MET3, MET4, METMID)
X-FAB XH018 0.18µ HV NVM CMOS E-FLASH (MET3, MET4, MET5, METMID)
X-FAB XT018 0.18µ HV SOI CMOS (MET3, METMID)
X-FAB XT018 0.18µ HV SOI CMOS (MET3, MET4, METMID)
X-FAB XT018 0.18µ HV SOI CMOS (MET3, MET4, MET5, METMID)
XS018 0.18µ OPTO (MET3, METMID)
XS018 0.18µ OPTO (MET3, MET4, METMID)
XS018 0.18µ OPTO (MET3, MET4, MET5, METMID)
TSMC
All TSMC technologies
UMC
UMC
UMC
UMC
UMC
UMC
UMC
UMC
STANDARD
Price/mm2
L180 Logic GII, Mixed-Mode/RF, Logic Low Leakage
L180 CIS 1P4M CONV or 2P4M ULTRA
L180 EFLASH Logic GII
L130 Logic, Mixed-Mode/RF
L110AE Logic/Mixed-Mode/RF
L110 CIS
65nm Logic, MM/technologies
DISCOUNTED
Price/mm2
2500
8
1940
8
3150
8
2445
8
6500
8
4875
8
5800
8
4350
8
8
3800
5000 8
7000 8
7500 8
6800 8
4500 8
800 8
1000 8
2000 8
One-off fee of 6500 9
One-off fee of 5000
One-off fee of 10000
One-off fee of 5000
2950 8
3750 8
4550 8
5625 8
5100 8
3375 8
640 8
800 8
1300 8
One-off fee of 4700 9
One-off fee of 2500
One-off fee of 2500
One-off fee of 2500
STANDARD
Price/mm2
DISCOUNTED
Price/mm2
1430
1505
1580
1435
1525
1610
1200
1280
1355
1, 11
1360
1430
1505
1365
1450
1535
1145
1215
1290
1, 11
1, 11
1, 11
1, 11
1, 11
1, 11
1, 11
1, 11
STANDARD
Price/mm2
Upon request
STANDARD
Price/block
16600
27000
19700
28000
30600
31200
44700
5
5
5
5
5
5
6
1, 11
1, 11
1, 11
1, 11
1, 11
1, 11
1, 11
1, 11
1, 11
DISCOUNTED
Price/mm2
7
Upon request
7
DISCOUNTED
Price/block
15600
25800
18500
26400
29000
29500
42200
5
5
5
5
5
5
6
GLOBALFOUNDRIES
GLOBALFOUNDRIES
GLOBALFOUNDRIES
GLOBALFOUNDRIES
GLOBALFOUNDRIES
GLOBALFOUNDRIES
GLOBALFOUNDRIES
55
55
40
28
28
22
nm
nm
nm
nm
nm
nm
STANDARD
Price/mm2
DISCOUNTED
Price/mm2
3850 12
3850 12
4750 12
9800 12
9800 12
17000 12
3550 12
3550 12
4450 12
9000 12
9000 12
16000 12
STANDARD
Price/block
DISCOUNTED
Price/block
4200
3990
LPx-NVM/LPx-RF
LPe
LP/LP-RF/RF-mmWave
SLP-RF/HPP
SLP
FDX
MEMSCAP
METALMUMPS, PolyMUMPS, SOIMUMPS, PIEZOMUMPS – 10x10mm 10
Optional Postprocessing : see pricelist on www.europractice-ic.com
Larger size dies or undiced wafer
(die = design + cleared
perimeter)
Minimal size dies
(die size design size)
ePIXfab-imec SiPhotonics
Passives
1 block
2 blocks - vertical
2 blocks - horizontal
4 blocks
6 x 3 mm
6 x 6.2 mm
12.2 x 3 mm
12.2 x 6.2
mm
25 additional compact
dies
25 additional large dies
1 additional un-diced
200mm wafer
Cladding
High dose WG
STANDARD
Price
DISCOUNTED
Price
STANDARD
Price
DISCOUNTED
Price
STANDARD
Price
DISCOUNTED
Price
5000
9500
9500
4750
9000
9000
17000
16200
7400
11900
11900
19400
7150
11400
11400
18600
7400
11900
11900
19400
7150
11400
11400
18600
+1000
+1000
+1000
+1000
+1000
+1000
NA
NA
+2000
+2000
+2000
+2000
NA
NA
+2000
+2000
+2000
+2000
Included
+1000
Included
+1000
Included
+1000
Included
+1000
Included
+1000
Included
+1000
ePIXfab-imec SiPhotonics ISSIP50G
2.5 mm x 2.5 mm
5.15 mm x 2.5 mm
5.15 mm x 5.15 mm
10.45 mm x 5.15 mm
10.45 mm x 10.45 mm
20 additional dies
miniPhotonics (10 samples)
Regular (20 samples)
STANDARD
Price
DISCOUNTED
Price
10000
20000
40000
80000
150000
+1000
9500
19000
38000
76000
142500
+1000
Minimum area : 2 full blocks
ePIXfab-LETI SiPhotonics Passives
(if not enough designs LETI can cancel the run)
Regular
Un-diced 200mm wafer
Full : 6.0 x 4.0 mm
Half : 6.0 x 2.0 mm
Larger sizes
Variable dose, metrology, dicing,
fabrication report, final resist cladding
Deep rib 65nm
Minimum area : 5 full blocks
STANDARD
Price
DISCOUNTED
Price
STANDARD
Price
DISCOUNTED
Price
4870
2435
Contact us
4630
2315
Contact us
3230
1615
Contact us
3070
1535
Contact us
Included
Included
Included
Included
+1765
Minimum area : 2 full blocks
ePIXfab-LETI SiPhotonics Passives + heater +
metallization for wire bonding compatibility
(if not enough designs LETI can cancel the run)
4.0 x 2.0 mm
miniPhotonics (15 samples)
4.0 x 4.0 mm
Half : 6.0 x 2.0 mm
Regular (25 samples)
Full : 6.0 x 4.0 mm
Larger sizes
Variable dose, metrology, dicing,
fabrication report, final resist cladding
Deep rib 65nm
Passivation opening
Minimum area : 5 full blocks
STANDARD
Price
DISCOUNTED
Price
STANDARD
Price
DISCOUNTED
Price
9550
19100
14325
28650
Contact us
9075
18145
13610
27220
Contact us
NA
NA
10750
21500
Contact us
NA
NA
10215
20425
Contact us
Included
Included
Included
Included
+1765
+1765
STANDARD
Price
DISCOUNTED
Price
4800 Canadian dollar
7200 Canadian dollar
12000 Canadian dollar
NA
NA
NA
STANDARD
Price
DISCOUNTED
Price
8000 Canadian dollar
15400 Canadian dollar
29800 Canadian dollar
NA
NA
NA
Micralyne (prices only for academia)
MicraGEM-SI
4.0 mm x 4.0 mm
4.0 mm x 8.0 mm
8.0 mm x 8.0 mm
Teledyne Dalsa (prices only for academia)
MiDIS
4.0 mm x 4.0 mm
4.0 mm x 8.0 mm
8.0 mm x 8.0 mm
Notes
1)
Price = area (mm2) * price/mm2 with min. fabrication cost equivalent to 10 mm2
2)
Price = area (mm2) * price/mm2 with min. fabrication cost equivalent to 5 mm2
3)
Price = area (mm2) * price/mm2 with min. fabrication cost equivalent to 8 mm2
4)
Price = area (mm2) * price/mm2 with min. fabrication cost equivalent to 7 mm2
5)
Price = per block of 5x5mm needed to fit the design in
6)
Price = per block of 4x4mm needed to fit the design in
7)
Price can be calculated through http://www.europractice-ic.com/TSMC_request_prices.php
8)
Price = area (mm2) * price/mm2 with min. fabrication cost equivalent to 0.8 mm2
9)
Price = per submitted design (no size limit, bumping limited to 200 bumps)
10)
11)
12)
Cost for extra services like structures release, subdicing, …
please refer to http://www.europractice-ic.com/MEMS_pricing.php
Area will be rounded upwards to the next mm2 (eg. 12.24 mm2 will be charged as 13 mm2)
Price = area (mm2) * price/mm2 with min. fabrication cost equivalent to 9 mm2
Any edge length between 1.5 mm to 12.5 mm is possible. The mentioned die size is referred to the Pre-Shrink die size
Contacts
imec, Belgium (P. Malisse, tel: +32 16 281273, e-mail: mpc@imec.be)
Fraunhofer IIS, Germany (W. McKinley, tel : +49 9131 776 4413, e-mail: europrac@iis.fraunhofer.de)