STTH2R06UFY - STMicroelectronics

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STTH2R06-Y
Automotive Turbo 2 ultrafast high voltage rectifier
Datasheet - production data
Description
K
A
A
The STTH2R06-Y is an ultrafast recovery power
rectifier dedicated to energy recovery in
automotive application housed in SMBflat to
improve space saving.
It is especially designed for clamping function in
energy recovery block.
K
The compromise between forward voltage drop
and recovery time offers optimized performances.
SMBflat
Table 1. Device summary
Features
• Ultrafast recovery
• Low switching losses
• High surge capability
• Low leakage current
Symbol
Value
IF(AV)
2A
VRRM
600 V
Tj (max)
175 °C
VF (typ)
1.1 V
Trr (typ)
35 ns
• High junction temperature
• AEC-Q101 qualified
• ECOPACK®2 compliant component
• VRRM guaranteed from -40 to +175 °C
August 2014
This is information on a product in full production.
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www.st.com
Characteristics
1
STTH2R06-Y
Characteristics
Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified)
Symbol
1.
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
Tj = -40 to +175 °C
600
V
IF(AV)
Average forward current, square waveform
TL = 110 °C δ = 0.5
2
A
IFSM
Forward Surge current
tp = 10 ms
28
A
Tstg
Storage temperature range
-65 to + 175
°C
Tj(1)
Operating temperature range
-40 to + 175
°C
1
dPtot <
condition to avoid thermal runaway for a diode on its own heatsink
Rth(j-a)
dTj
Table 3. Thermal resistance
Symbol
Rth(j-l)
Parameter
Value
Unit
18
°C/W
Junction to lead
Table 4. Static electrical characteristics
Symbol
Parameter
Tests conditions
IR(1)
Reverse leakage current
VF(2)
Forward voltage drop
Tj = 25 °C
Tj = 150 °C
Tj = 25 °C
Tj = 150 °C
Min.
Typ.
Max.
VR = 600 V
2
µA
-
12
IF = 2A
Unit
85
1.9
V
-
1.1
1.4
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 1.10 x IF(AV) + 0.15 x IF2(RMS)
Table 5. Dynamic electrical characteristics
Symbol
Tests conditions
trr
Reverse recovery time
tfr
Forward recovery time
VFP
2/8
Parameter
Forward recovery
voltage
I = 1 A, dIF/dt = -50 A/µs
Tj = 25 °C F
VR = 30 V
I = 2 A, dIF/dt = 100 A/µs,
Tj = 25 °C F
VFR = 2.5 V
DocID026718 Rev 1
Min. Typ. Max. Unit
-
35
50
ns
-
80
-
7
V
STTH2R06-Y
Characteristics
Figure 1. Average forward power dissipation
versus average forward current
4
PF(AV)(W)
Figure 2. Forward voltage drop versus forward
current (typical values)
I (A)
10.00 F
δ = 0.05 δ = 0.1
δ = 0.2
δ = 0.5
δ=1
Tj = 150°C
3
1.00
2
Tj = 25°C
0.10
T
1
0.0
0.5
1.0
tp
δ =tp/T
IF(AV)(A)
0
1.5
2.0
0.0
2.5
Figure 3. Forward voltage drop versus forward
current (maximum values)
10.00
VF(V)
0.01
IF(A)
0.5
1.0
1.5
2.0
2.5
Figure 4. Relative variation of thermal
impedance junction to lead versus pulse
duration
1.0
Zth(j-l)/Rth(j-l)
0.9
0.8
Tj = 150°C
0.7
1.00
0.6
0.5
Tj = 25°C
0.4
0.10
0.3
0.2
Single pulse
0.1
VF(V)
0.01
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Figure 5. Peak reverse recovery current versus
dIF/dt (typical values)
9
IRM(A)
tp(s)
0.0
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
Figure 6. Reverse recovery time versus dIF/dt
(typical values)
300
tRR(ns)
VR = 400 V
Tj = 125 °C
8
1.E+01
VR = 400 V
Tj = 125 °C
250
IF = 2 x IF(av)
7
IF = IF(av)
6
200
IF = 0.5 x IF(av)
5
IF = 2 x IF(av)
150
4
100
3
2
IF = IF(av)
50
1
dIF/dt(A/µs)
0
0
50
100
150
200
250
300
350
400
450
500
IF = 0.5 x IF(av)
dIF/dt(A/µs)
0
0
50
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200
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500
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Characteristics
STTH2R06-Y
Figure 7. Reverse recovery charges versus
dIF/dt (typical values)
400
QRR(nC)
Figure 8. Relative variation of dynamic
parameters versus junction temperature
1.2
VR = 400 V
Tj = 125 °C
350
1.0
IF = 2 x IF(av)
300
0.8
250
IF = IF(av)
tRR
0.6
200
IRM
IF = 0.5 x IF(av)
150
QRR
0.4
100
0.2
50
dIF/dt(A/µs)
0
0
100
200
300
400
500
IF = IF(av)
VR = 400 V
Reference: Tj = 125 °C
Tj(°C)
0.0
25
50
75
100
125
Figure 9. Transient peak forward voltage versus Figure 10. Forward recovery time versus dIF/dt
dIF/dt (typical values)
(typical values)
VFP(V)
12
120
IF = IF(AV)
Tj = 125 °C
10
100
8
80
6
60
4
40
2
tFR(ns)
IF = IF(AV)
VFR = 2.5 V
Tj = 125 °C
20
dIF/dt(A/µs)
0
dIF/dt(A/µs)
0
20
40
60
80
100
120
140
160
180
200
20
40
60
80
100
120
140
160
180
200
Figure 11. Junction capacitance versus reverse
Figure 12. Thermal resistance junction to
voltage applied (typical values)
ambient versus copper surface under each lead
(typical values)
100
C(pF)
F = 1 MHz
Vosc = 30 mVRMS
Tj = 25 °C
200
Rth(j-a)(°C/W)
epoxy printed circuit board FR4, copper thickness: 35 µm
SMBflat
150
10
100
50
VR(V)
1
1
4/8
Scu(cm²)
0
10
100
1000
0.0
0.5
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1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
STTH2R06-Y
2
Package information
Package information
•
Epoxy meets UL94,V0
•
Lead-free package
•
Band indicates cathode
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Figure 13. SMBflat dimensions definitions
A
c
D
L 2x
L2 2x
E
E1
L
L1 2x
b
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Package information
STTH2R06-Y
Table 6. SMBflat dimension values
Dimensions
Ref.
Millimeters
Min.
Typ.
Inches
Max.
Min.
Typ.
A
0.90
1.10
0.035
0.043
b
1.95
2.20
0.077
0.087
c
0.15
0.40
0.006
0.016
D
3.30
3.95
0.130
0.155
E
5.10
5.60
0.200
0.220
E1
4.05
4.60
0.159
0.181
L
0.75
1.50
0.029
0.059
L1
0.40
0.016
L2
0.60
0.024
Figure 14. SMBflat footprint, dimensions in mm (inches)
5.84
(0.230)
2.07
(0.082)
1.20
(0.047)
6/8
Max.
3.44
(0.136)
1.20
(0.047)
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STTH2R06-Y
3
Ordering information
Ordering information
Table 7. Ordering information
4
Order codes
Marking
Package
Weight
Base qty
Delivery mode
STTH2R06UFY
F2R6Y
SMBflat
50 mg
5000
Tape and reel
Revision history
Table 8. Document revision history
Date
Revision
04-Aug-2014
1
Changes
Initial release.
DocID026718 Rev 1
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STTH2R06-Y
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