UTC 2SD965B
NPN EPITAXIAL SILICON TRANSISTOR
LOW VOLTAGE HIGH CURRENT
NPN TRANSISTOR
FEATURES
* Collector current up to 5A
* 2SD965B : Collector-Emitter voltage up to 30 V
APPLICATIONS
* Audio amplifier
* Flash unit of camera
* Switching circuit
1
TO-92
1: EMITTER
2: COLLECTOR 3: BASE
*Pb-free plating product number: 2SD965BL
ABSOLUTE MAXIMUM RATINGS
( Ta=25°C )
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector dissipation(Ta=25°C)
Collector current
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
Pc
Ic
Tj
TSTG
RATINGS
40
30
7
750
5
150
-65 ~ +150
UNIT
V
V
V
mW
A
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
Collector-base breakdown voltage
BVCBO
Collector-emitter breakdown
BVCEO
voltage
Emitter-base breakdown voltage
BVEBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
hFE 1
DC current gain(note)
hFE 2
hFE 3
Collector-emitter saturation voltage VCE(sat)
Current gain bandwidth product
fT
Output capacitance
Cob
TEST CONDITIONS
Ic=100µA,IE=0
Ic=1mA,IB=0
IE=10µA,Ic=0
VCB=30V,IE=0
VEB=7V,Ic=0
VCE=2V,Ic=1mA
VCE=2V,Ic=0.5A
VCE=2V,Ic=2A
Ic=3A, IB= 0.1A
VCE=6V,Ic=50mA
VCB=20V,IE=0, f=1MHz
MIN
40
30
TYP
MAX
UNIT
V
V
7
V
nA
nA
200
200
200
800
230
150
1
V
MHz
pF
150
50
CLASSIFICATION OF hFE2
RANK
RANGE
UTC
Q
230-380
R
340-600
UNISONIC TECHNOLOGIES CO. LTD
www.unisonic.com.tw
S
560-800
1
QW-R201-078,B
UTC 2SD965B
NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTIC CURVES
Fig.1 Static characteristics
Fig.2 DC current Gain
IB=3.0mA
10
IB=2.0mA
2.0
IB=1.5mA
1.5
IB=1.0mA
IB=0.5mA
1.0
0
0.4
0.8
1.2
1.6
10
VCE=2V
10
10
2.0
2
1
0
-1
10
Collector-Emitter voltage ( V)
10
1
10
10
Current Gain-bandwidth
product,f T(MHz)
Saturation voltage (mV)
10
VBE(sat)
2
1
0
10
10
1
10
2
10
3
Ic,Collector current (mA)
UTC
10
4
Fig.6 Collector output Capacitance
10
VCE=6V
VCE(sat)
10
3
3
Ic=10*IB
10
10
Fig.5 Current gain-bandwidth
product
Fig.4 Saturation voltage
4
3
2
Ic,Collector current (mA)
10
4
10
10
10
Cob,Capacitance (pF)
0
10
Fig.3 Base-Emitter on Voltage
3
IB=2.5mA
2.5
HFE, DC current Gain
Ic,Collector current (A)
3.0
2
1
0
10
0
10
1
10
2
10
3
10
10
10
3
f=1MHz
IE=0
2
1
0
10
-1
Ic,Collector current (mA)
UNISONIC TECHNOLOGIES CO. LTD
www.unisonic.com.tw
10
0
10
1
10
2
Collector-Base voltage (V)
2
QW-R201-078,B
UTC 2SD965B
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO. LTD
www.unisonic.com.tw
3
QW-R201-078,B