IPDiA_Press Release_WB Silicon Capacitors_260315
IPDiA launches high performing 1 nF Wire Bondable vertical Silicon Capacitor
(WBSC) in the smallest package (0101) for Wireless Communication, Radar and
Data Broadcasting Systems.
As the market is continually moving towards higher power efficiency and higher
working frequency, IPDiA, leader in high density silicon capacitors, announces the
launch of its WBSC range dedicated to RF and microwave power applications up to 10
GHz(*) (DC decoupling/DC noise and harmonic filtering/matching networks functions).
These wire bondable vertical capacitors built in ultra-deep silicon trenches have been developed using a
semiconductor process providing high capacitance density from 1.3 nF/mm² to 250 nF/mm² (with a
breakdown voltage of respectively 450 V to 11 V). The leading product of the series shows a high
capacitance value of 1 nF in a 250 µm (100 µm on request) low profile 0101 SMT. WBSCs offer the best
trade-off between capacitance value and die size and they are ideal for the requirements of these most
demanding applications.
The unique vertical silicon capacitor technology developed by IPDiA, provides industry-leading performance
particularly in terms of capacitor stability over the full operating DC voltage (< 0.02 %/V) & temperature
ranges (± 0.5 % from -55 °C to +150 °C). These capacitors also show very low dielectric absorption (0.05 %)
and piezo effect.
IPDiA vertical technology gives an excellent flexibility to customize your own product such as capacitor
arrays with:
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Form factor ratio from 1/1 to 1/8
Capacitance range from a few pF to several tens of nF
Size: from 0.010 to 3.3 square inches
Combination of pF and nF capacitors in a single component.
The WBSC series is compliant with the standard wire bonding approach, making the product fully
compatible with high speed automated pick-and-place manufacturing operations, and is also compatible with
single layer ceramic capacitors and Metal Oxide Semiconductor (MOS) single layer capacitors. The WBSC
capacitors are RoHS and REACH compliant and are available with top & bottom gold metallization.
 WBSC physical parameters:
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Available sizes: from 0101 to 0805
Substrate: Silicon with gold backing
Dielectric: Silicon dioxide / Silicon nitride
 WBSC electrical parameters
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Capacitance range: a few pF to several tens of nF
Ultra large & strong rejection > -35 dB (from 0.5 to over 10 GHz)
Low ESR < 10 mΩ and low ESL < 10 pH;
Excellent reliability exceeding X7R ceramics by a factor of 100 (FIT)
Lower dielectric absorption (0.05 %) compared with NP0/X7R
No AC distortion due to low-to zero piezo effect
Ultra high stability capacitance:
- Temp. ± 0.5 % (-55 °C to +150 °C)
- DC voltage < 0.02 %/V and negligible ageing
Reliable and repeatable performances thanks to a fully controlled production line with high
temperature curing (above 900°C) generating a highly pure oxide
(*) other series in the same format, such as UWSC, are also available for higher frequency applications.
IPDiA_Press Release_WB Silicon Capacitors_260315
About IPDiA
IPDiA is a preferred supplier of high performance, high stability and high reliability silicon passive
components to customers in the medical, automotive, communication, industrial and defense/aerospace
markets. The company portfolio includes standard component devices such as silicon capacitors, ESD
protection devices as well as customized devices. IPDiA headquarters are located in Caen, France. The
company operates design centers, sales and marketing offices and a manufacturing facility certified ISO
9001 / 14001, ISO TS16949 for the automotive market as well as ISO 13485 for medical devices.
For more information or to obtain samples, please contact IPDiA: sales@ipdia.com
or visit our website www.ipdia.com.
Press Contact: laetitia.omnes@ipdia.com / +33 231 535 406