August 2008
■
λ
= 940nm
■ Package Type = Sidelooker
■ Chip Material = GaAs
■ Matched Photosensor: QSE113
■ Medium Wide Emission Angle, 50°
■ Package Material: Clear Epoxy
■ High Output Power
■ Gray stripe on the top side
The QEE113 is a 940nm GaAs LED encapsulated in a medium wide angle, plastic sidelooker package.
0.087 (2.22)
0.175 (4.44)
Ø0.065 (1.65)
0.050 (1.27)
Ø0.095 (2.41)
0.200 (5.08)
CATHODE
0.500 (12.70)
MIN
ANODE
0.020 (0.51) SQ.
(2X)
0.100 (2.54)
0.030 (0.76)
0.100 (2.54)
NOM
Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is ±0.010 (0.25) on all non-nominal dimensions
unless otherwise specified.
©2002 Fairchild Semiconductor Corporation
QEE113 Rev. 1.0.1
ANODE
CATHODE www.fairchildsemi.com

(T
A
= 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
T
OPR
T
STG
T
SOL-I
T
SOL-F
I
F
V
R
P
D
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(2,3,4)
Soldering Temperature (Flow)
(2,3)
Continuous Forward Current
Reverse Voltage
Power Dissipation
(1)
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
50
5
100
°C
°C
°C
°C mA
V mW
Notes:
1. Derate power dissipation linearly 1.33mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
(T
A
= 25°C)
λ
PE
Peak Emission Wavelength I
F
= 20mA
TC λ Temperature Coefficient
2
Θ 1
/2 Emission Angle
Forward Voltage
I
F
= 100mA
I
F
= 100mA, tp = 20ms V
F
TC
VF
I
R
I
E
TC
IE t r t f
C j
Temperature Coefficient
Reverse Current
Radiant Intensity
Temperature Coefficient
Rise Time
Fall Time
Junction Capacitance
V
R
= 5V
I
F
= 100mA, tp = 20ms
I
F
= 100mA
V
R
= 0V
3
945
0.3
50
-2
7.5
-0.7
800
800
14
1.5
10
12
nm nm / °C
°
V mV / °C
µA mW/sr
% / °C ns ns pF
©2002 Fairchild Semiconductor Corporation
QEE113 Rev. 1.0.1
2 www.fairchildsemi.com

Fig. 1 Normalized Intensity vs. Wavelength
0.4
0.3
0.2
0.1
0.0
700
1.0
0.9
0.8
0.7
0.6
0.5
10
Fig. 3 Normalized Radiant Intensity vs. Forward Current
Normalized to:
I
F
= 100mA Pulsed t
PW
= 20ms
Duty Cycle = 4%
T
A
= 25
°
C
1
750 800 850 900
λ
(nm)
950 1,000 1,050
0.1
10 100
I
F
– FORWARD CURRENT (mA)
1000
2.0
1.5
1.0
10
Fig. 5 Forward Voltage vs. Forward Current
3.5
3.0
I
F
Pulsed t
PW
= 20ms
Duty Cycle = 4%
T
A
= 25
°
C
2.5
100
I
F
– FORWARD CURRENT (mA)
1000
955
950
945
940
975
970
965
960
935
0
Fig. 2 Peak Wavelength vs. Ambient Temperature
10
I
F
= 20mA DC
20 30 40 50 60 70
T
A
– AMBIENT TEMPERTURE (
°
C)
80 90 100
Fig. 4 Normalized Radient Intensity vs. Ambient Temperature
1.4
1.2
1.0
Normalized to:
I
F
= 20mA Pulsed t
PW
= 20ms
Duty Cycle = 4%
T
A
= 25
°
C
0.8
0.6
0.4
0.2
0.0
0 10 20 30 40 50 60 70
T
A
– AMBIENT TEMPERTURE ( ° C)
80 90 100
1.55
1.50
Fig. 6 Forward Voltage vs. Ambient Temperature
I
F
= 20mA Pulsed t
PW
= 20ms
Duty Cycle = 4%
1.45
1.40
1.35
1.30
1.25
0 10 20 30 40 50 60 70
T
A
– AMBIENT TEMPERTURE (
°
C)
80 90 100
©2002 Fairchild Semiconductor Corporation
QEE113 Rev. 1.0.1
3 www.fairchildsemi.com

(Continued)
150
°
140
°
160
°
170
°
180
°
1.0
0.8
130
°
120
°
Fig. 7 Radiation Diagram
110
°
100
° 90
°
80
°
70
°
60
°
50
°
0.6
0.4
0.2
0.0
0.2
0.4
0.6
0.8
40
°
30
°
20
°
10
°
1.0
0
°
1.0
Fig. 8 Coupling Characteristics of QEE113 And QSE113
0.8
0.6
Normalized to: d = 0 inch
I
F
Pulsed t pw
= 100
µ s
Duty Cycle = 0.1%
V
CC
R
L
T
A
= 5V
= 100
Ω
= 25
°
C
0.4
0.2
0.0
0 1 2 3 4
LENS TIP SEPARATION (inches)
5 6
©2002 Fairchild Semiconductor Corporation
QEE113 Rev. 1.0.1
4 www.fairchildsemi.com

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PRODUCT STATUS DEFINITIONS
Definition of Terms
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Advance Information Formative / In Design
Preliminary
No Identification Needed
Obsolete
First Production
Ful l Production
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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Rev. I36
©2002 Fairchild Semiconductor Corporation
QEE113 Rev. 1.0.1
5 www.fairchildsemi.com