Freescale Semiconductor
Technical Data
MHL9318
Rev. 3, 1/2005
Replaced by MHL9318N. There are no form, fit or function changes with this part
replacement. N suffix added to part number to indicate transition to lead - free
terminations.
MHL9318
Designed for ultra- linear amplifier applications in 50 ohm systems operating in
the cellular frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for the most demanding analog or digital modulation
systems, such as TDMA and CDMA.
• Third Order Intercept: 49 dBm Typ
• Power Gain: 17.5 dB Typ (@ f = 880 MHz)
• Excellent Phase Linearity and Group Delay Characteristics
• Ideal for Feedforward Base Station Applications
• For Use in TDMA and CDMA Multi - Carrier Applications
3.0 W, 17.5 dB
860 - 900 MHz
RF LINEAR LDMOS AMPLIFIER
CASE 301AS - 01, STYLE 1
Table 1. Absolute Maximum Ratings (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DC Supply Voltage
VDD
30
Vdc
RF Input Power
Pin
+20
dBm
Storage Temperature Range
Tstg
- 40 to +100
°C
Operating Case Temperature Range
TC
- 20 to +100
°C
Table 2. Electrical Characteristics (VDD = 28 Vdc, TC = 25°C; 50 Ω System)
Characteristic
Supply Current
Symbol
Min
Typ
Max
Unit
IDD
—
500
560
mA
Power Gain
(f = 880 MHz)
Gp
17
17.5
18.5
dB
Gain Flatness
(f = 860 - 900 MHz)
GF
—
0.1
0.2
dB
Power Output @ 1 dB Comp.
(f = 880 MHz)
Pout 1 dB
—
35.5
—
dBm
Input VSWR
(f = 860 - 900 MHz)
VSWRin
—
1.2:1
1.5:1
Output VSWR
(f = 860 - 900 MHz)
VSWRout
—
1.2:1
1.5:1
Third Order Intercept (f1 = 879 MHz, f2 = 884 MHz)
ITO
47
49
—
dBm
Noise Figure
NF
—
3
4.5
dB
 Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
(f = 960 MHz)
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Cellular Band
RF Linear LDMOS Amplifier
MHL9318
1
55
TC = 25°C
VDD = 28 V
50
20
P1dB, ITO (dBm)
Gp
0
ORL
TC = 25°C
VDD = 28 V
1200
f, FREQUENCY (MHz)
1600
25
500
2000
Figure 1. Power Gain, Input Return Loss,
Output Return Loss versus Frequency
515
f = 880 MHz
VDD = 28 V
18
IDD
17
500
15
−40
−20
0
40
20
60
TEMPERATURE (°C)
80
100
PHASE ( °)
GROUP DELAY
−265
PHASE
−270
46
37
44
36
40
−40
f = 880 MHz
VDD = 28 V
−20
0
35
P1dB
20
40
60
TEMPERATURE (°C)
80
100
34
120
Figure 4. ITO, P1dB versus Temperature
2.2
0.30
2.1
0.25
1.9
1.8
1.7
−275
39
ITO
38
42
490
120
2.0
−260
1200
40
0.60
f = 860−900 MHz
VDD = 28 V
G F , GAIN FLATNESS (dB)
f = 880 MHz
VDD = 28 V
−255
1100
48
Figure 3. Power Gain, IDD versus Temperature
−250
900
800
1000
f, FREQUENCY (MHz)
50
495
16
700
52
510
505
Gp
600
Figure 2. P1dB, ITO versus Frequency
ITO (dBm)
20
19
P1dB
ARCHIVE INFORMATION
800
35
30
I DD (mA)
G p , POWER GAIN (dB)
ARCHIVE INFORMATION
−40
400
40
0.50
0.20
0.40
0.15
0.30
0.10
0.20
PHASE LINEARITY
0.05
0.10
GF
−280
−40
−20
0
20
40
60
TEMPERATURE (°C)
80
100
1.6
120
Figure 5. Phase(1), Group Delay(1) versus Temperature
1. In Production Test Fixture
0
−40
−20
0
20
40
60
TEMPERATURE (°C)
80
100
0
120
Figure 6. Gain Flatness, Phase Linearity
versus Temperature
MHL9318
2
P1dB (dBm)
IRL
ITO
45
RF Device Data
Freescale Semiconductor
PHASE LINEARITY( °)
−20
GROUP DELAY (nS)
POWER GAIN/RETURN LOSS (dB)
40
TYPICAL CHARACTERISTICS
18.0
17.8
37
600
50
36
500
48
24
26
VOLTAGE (VOLTS)
28
42
22
1.91
−261.0
1.90
PHASE
1.89
−261.5
GROUP DELAY
−262.0
1.88
f = 880 MHz
TC = 25°C
24
26
VOLTAGE (VOLTS)
28
1.87
1.86
30
Figure 9. Phase(1), Group Delay(1) versus Voltage
1. In Production Test Fixture
PHASE LINEARITY( °)
−260.5
−263.0
22
f = 880 MHz
TC = 25°C
24
26
VOLTAGE (VOLTS)
33
28
30
Figure 8. ITO, P1dB versus Voltage
GROUP DELAY (nS)
Figure 7. Power Gain, IDD versus Voltage
−262.5
34
44
200
30
P1dB (dBm)
46
32
ARCHIVE INFORMATION
17.0
22
300
35
P1dB
0.35
0.08
0.30
0.07
0.25
0.06
0.20
0.05
PHASE LINEARITY
0.04
0.15
0.10
GF
0.05
0
22
24
26
VOLTAGE (VOLTS)
0.03
f = 860−900 MHz
TC = 25°C
28
0.02
30
Figure 10. Phase Linearity, Gain Flatness
versus Voltage
0.01
MHL9318
RF Device Data
Freescale Semiconductor
3
G F , GAIN FLATNESS (dB)
f = 880 MHz
TC = 25°C
17.2
ITO (dBm)
400
ITO
I DD (mA)
G p , POWER GAIN (dB)
IDD
17.4
PHASE ( °)
52
Gp
17.6
ARCHIVE INFORMATION
700
ARCHIVE INFORMATION
ARCHIVE INFORMATION
NOTES
MHL9318
4
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
ARCHIVE INFORMATION
NOTES
MHL9318
RF Device Data
Freescale Semiconductor
5
ARCHIVE INFORMATION
ARCHIVE INFORMATION
NOTES
MHL9318
6
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
M
T A
M
R
-S-
J
1
K
0.51 (0.020)
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION F TO CENTER OF LEADS.
2
3
W
D 3 PL
T B M
N
H
Q 2 PL
ARCHIVE INFORMATION
0.20 (0.008)
F
M
T S
P
3 PL
0.51 (0.020)
M
A
M
E
C
-T-
M
T
CASE 301AS - 01
ISSUE A
SEATING
PLANE
DIM
A
B
C
D
E
F
G
H
J
K
N
P
Q
R
S
W
INCHES
MIN
MAX
1.760
1.780
1.370
1.390
0.245
0.265
0.017
0.023
0.080
0.100
0.086 BSC
1.650 BSC
1.290 BSC
0.266
0.280
0.125
0.165
0.390 BSC
0.008
0.013
0.118
0.132
0.535
0.555
0.445
0.465
0.090 BSC
STYLE 1:
PIN 1.
2.
3.
CASE:
RF INPUT
VDD
RF OUTPUT
GROUND
MILLIMETERS
MIN
MAX
44.70
45.21
34.80
35.31
6.22
6.73
0.43
0.58
2.03
2.54
2.18 BSC
41.91 BSC
32.77 BSC
6.76
7.11
3.18
4.19
9.91 BSC
0.20
0.33
3.00
3.35
13.59
14.10
11.30
11.81
2.29 BSC
ARCHIVE INFORMATION
0.51 (0.020)
-AG
-B-
MHL9318
RF Device Data
Freescale Semiconductor
7
Home Page:
www.freescale.com
E - mail:
support@freescale.com
USA/Europe or Locations Not Listed:
Freescale Semiconductor
Technical Information Center, CH370
1300 N. Alma School Road
Chandler, Arizona 85224
+1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130
support@freescale.com
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
support@freescale.com
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1 - 8 - 1, Shimo - Meguro, Meguro - ku,
Tokyo 153 - 0064
Japan
0120 191014 or +81 3 5437 9125
support.japan@freescale.com
Asia/Pacific:
Freescale Semiconductor Hong Kong Ltd.
Technical Information Center
2 Dai King Street
Tai Po Industrial Estate
Tai Po, N.T., Hong Kong
+800 2666 8080
support.asia@freescale.com
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1 - 800 - 441 - 2447 or 303 - 675 - 2140
Fax: 303 - 675 - 2150
LDCForFreescaleSemiconductor@hibbertgroup.com
ARCHIVE INFORMATION
ARCHIVE INFORMATION
How to Reach Us:
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
 Freescale Semiconductor, Inc. 2005. All rights reserved.
MHL9318
Document Number: MHL9318
Rev. 3, 1/2005
8
RF Device Data
Freescale Semiconductor