HMC998LP5E
v01.0813
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 20 GHz
Features
Amplifiers - Linear & Power - SMT
Typical Applications
The HMC998LP5E is ideal for:
P1dB Output Power: +31 dBm
• Test Instumentation
Psat Output Power: +33 dBm
• Microwave Radio & VSAT
High Gain: 11 dB
• Military & Space
Output IP3: +41 dBm
• Telecom Infrastructure
Supply Voltage: Vdd = +15V @ 500 mA
• Fiber Optics
50 Ohm Matched Input/Output
32 Lead 5x5 mm SMT Package: 25 mm²
Functional Diagram
General Description
The HMC998LP5E is a GaAs pHEMT MMIC
Distributed Power Amplifier which operates between
0.1 and 20 GHz. The amplifier provides 11 dB of gain,
+41 dBm output IP3, and +31 dBm of output power at
1 dB gain compression while requiring only 500 mA
from a +15V supply. The HMC998LP5E exihibits a
slightly positive gain from 3 to 17 GHz making it ideal
for EW, ECM, Radar and test equipment applications.
The HMC998LP5E amplifier I/Os are internally
matched to 50 Ohms and is supplied in a leadless
QFN 5x5 mm surface mount package.
Electrical Specifications, TA = +25° C, Vdd =+15V, Vgg2 = +9.5V, Idd = 500 mA [1]
Parameter
Min.
Frequency Range
Typ.
Max.
Min.
0.1 - 4
Gain
8
11
Typ.
Max.
Min.
4 - 16
8
11
9
Typ.
max
Units
16 - 20
GHz
12
dB
Gain Flatness
±0.3
±0.5
±0.5
dB
Gain Variation Over Temperature
0.006
0.012
0.017
dB/ °C
Input Return Loss
17
15
25
dB
Output Return Loss
10
15
20
dB
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
28
31
29
dBm
33
31
dBm
41
41
40
dBm
8
4.5
5
dB
500
500
500
mA
33
[2]
Noise Figure
Total Supply Current
28
31
26
[1] Adjust Vgg between -2 to 0V to achieve Idd = 500 mA typical.
[2] Measurement taken at Pout / tone = +14 dBm.
1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC998LP5E
v01.0813
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 20 GHz
Gain & Return Loss
Gain vs. Temperature
20
14
12
GAIN (dB)
RESPONSE (dB)
10
0
-10
10
8
-20
6
-30
4
0
4
8
12
16
20
24
0
4
8
FREQUENCY (GHz)
S21
S11
S22
+25 C
16
20
0
-10
-10
-20
-30
+85 C
-40 C
Output Return Loss vs. Temperature
0
RETURN LOSS (dB)
RETURN LOSS (dB)
Input Return Loss vs. Temperature
-40
-20
-30
-40
0
4
8
12
16
20
0
4
8
FREQUENCY (GHz)
+25 C
+85 C
-40 C
+25 C
16
20
+85 C
-40 C
Noise Figure vs. Temperature
10
20
9
10
NOISE FIGURE (dB)
8
0
-10
-20
-30
7
6
5
4
3
2
-40
-50
0.0001
12
FREQUENCY (GHz)
Low Frequency Gain & Return Loss
RESPONSE (dB)
12
FREQUENCY (GHz)
Amplifiers - Linear & Power - SMT
16
1
0.001
0.01
0.1
1
10
FREQUENCY (GHz)
S21
S11
0
0
4
8
12
16
20
FREQUENCY (GHz)
S22
+25 C
+85 C
-40 C
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
2
HMC998LP5E
v01.0813
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 20 GHz
36
34
34
32
32
Psat (dBm)
P1dB (dBm)
Psat vs. Temperature
36
30
28
26
26
24
0
4
8
12
16
20
0
4
8
FREQUENCY (GHz)
+25 C
+85 C
-40 C
+25 C
P1dB vs Supply Voltage
16
20
+85 C
-40 C
Psat vs. Supply Voltage
36
34
34
32
32
Psat (dBm)
36
30
30
28
28
26
26
24
24
0
4
8
12
16
20
0
4
8
FREQUENCY (GHz)
15V
12
16
20
FREQUENCY (GHz)
14V
15V
12V
14V
12V
Output IP3 vs. Supply Voltage,
Pout/tone = +18 dBm
50
50
45
45
IP3 (dBm)
IP3 (dBm)
12
FREQUENCY (GHz)
Output IP3 vs. Temperature,
Pout/tone = +18 dBm
40
35
30
40
35
30
25
25
0
4
8
12
16
20
+25 C
+85 C
0
4
8
12
16
20
FREQUENCY (GHz)
FREQUENCY (GHz)
3
30
28
24
P1dB (dBm)
Amplifiers - Linear & Power - SMT
P1dB vs. Temperature
-40 C
15V
14V
12V
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC998LP5E
v01.0813
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 20 GHz
Output IP3 vs. Idd @ 10 GHz
Power Compression @ 4 GHz
Pout (dBm), GAIN (dB), PAE (%)
IP3 (dBm)
45
40
35
30
25
30
25
20
15
10
5
0
0
2
4
6
8
10
12
14
16
18
20
0
22
4
8
OUTPUT POWER (dBm)
450 mA
Pout
500 mA
Power Compression @ 10 GHz
20
24
Gain
PAE
35
Pout (dBm), GAIN (dB), PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
16
Power Compression @ 18 GHz
35
30
25
20
15
10
5
30
25
20
15
10
5
0
0
1
5
9
13
17
21
25
0
4
INPUT POWER (dBm)
Pout
8
12
16
20
24
INPUT POWER (dBm)
Gain
PAE
Pout
Gain
PAE
Second Harmonics vs. Temperature
@ Pout = 18 dBm
Power Dissipation
11
70
10
60
SECOND HARMONIC (dBc)
POWER DISSIPATION (W)
12
INPUT POWER (dBm)
Amplifiers - Linear & Power - SMT
35
50
9
8
7
6
5
4
50
40
30
20
10
0
0
4
8
12
16
20
24
0
4
8
INPUT POWER (dBm)
3 GHz
6 GHz
9 GHz
12
16
20
24
FREQUENCY(GHz)
12 GHz
15 GHz
18 GHz
+25 C
+85 C
-40 C
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
4
HMC998LP5E
v01.0813
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 20 GHz
Second Harmonics vs Pout
70
70
60
60
SECOND HARMONIC (dBc)
SECOND HARMONIC (dBc)
50
40
30
20
10
0
4
8
12
16
20
24
40
30
20
10
0
4
FREQUENCY(GHz)
+12V
8
12
16
20
24
FREQUENCY(GHz)
+14V
+15V
+12 dBm
+14 dBm
+16 dBm
+18 dBm
+20 dBm
+22 dBm
Reverse Isolation vs. Temperature
0
-10
-20
-30
-40
-50
-60
-70
-80
0
4
8
12
16
20
24
FREQUENCY (GHz)
+25 C
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
5
50
0
0
ISOLATION (dB)
Amplifiers - Linear & Power - SMT
Second Harmonics vs. Vdd
@ Pout = 18 dBm
+17 Vdc
Gate Bias Voltage (Vgg1)
-3 to 0 Vdc
Gate Bias Voltage (Vgg2)
Vgg2 = (Vdd-6.5V) to (Vdd-4.5V)
RF Input Power (RFIN)
+27 dBm
Channel Temperature
150 °C
Continuous Pdiss (T= 85 °C)
(derate 127 mW/°C above 85 °C)
8.26 W
Thermal Resistance
(channel to gnd paddle)
7.87 °C/W
Output Power into VSWR > 7:1
+32 dBm
Storage Temperature
-65 to 150°C
Operating Temperature
-40 to 85 °C
ESD Sensitivity (HBM)
Class 1A
+85 C
-40 C
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
+15
500
+14
500
+13
500
+12
500
Adjust Vgg1 to achieve Idd = 500 mA
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC998LP5E
v01.0813
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 20 GHz
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating [2]
Package Marking [1]
HMC998LP5E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL3
H998
XXXX
Amplifiers - Linear & Power - SMT
Outline Drawing
[1] 4-Digit lot number XXXX
[2] Max peak reflow temperature of 260 °C
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
6
HMC998LP5E
v01.0813
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 20 GHz
Amplifiers - Linear & Power - SMT
Pin Descriptions
7
Pin Number
Function
Description
1, 4, 6, 14, 20,
22,
GND
These pins and package bottom must be connected to
RF/DC ground.
2
Vgg2
Gate control for amplifier. Attach bypass capacitor per
application circuit herein. For nominal opperation +9.5V
should be applied to Vgg2.
3, 7, 8, 9, 10,
11, 12, 17, 18,
19, 23, 24, 25,
26, 27, 28, 31,
32
N/C
These pins are not connected internally, however all data
shown herein was measured with these pins connected
to RF/DC ground externally.
5
RFIN
This pad is DC coupled and matched to 50 Ohms. Blocking capacitor is required.
13
Vgg1
Gate control 1 for amplifier. Attach bypass capacitor per
application circuit herein. Please follow “MMIC Biasing
Procedure” application note.
15, 29
ACG4, ACG2
Low frequency termination. Attach bypass capacitor per
application circuit.
21
RFOUT & VDD
RF output for amplifier. Connect DC bias (Vdd) network
to provide drain current (Idd). See application circuit
herein.
30
ACG1
Low frequency termination. Attach bypass capacitor per
application circuit herein.
Interface Schematic
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC998LP5E
v01.0813
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 20 GHz
Amplifiers - Linear & Power - SMT
Evaluation PCB
Evaluation Order Information
Item
Contents
Part Number
Evaluation PCB Only
HMC998LP5E Evaluation PCB
Eval01-HMC998LP5E [1]
[1] Reference this number when ordering Evaluation PCB Only
List of Materials for Evaluation PCB EVAL01-HMC998LP5E
Item
Description
J1, J2, J5, J6
PCB Mount SMA RF Connector
J3, J4
DC Pins.
C1 - C4
1000 pF Capacitor, 0402 Pkg.
C5 - C8
10 kpF Capacitor, 0402 Pkg.
C9 - C11
4.7 uF Capacitor, Tantalum.
R1, R2
0 Ohm Resistor, 0402 Pkg.
U1
HMC998LP5E
PCB [1]
127135 Evaluation PCB.
[1] Circuit Board Material: Rogers 4350 or Arlon 25FR
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation circuit board shown is available from Hittite upon request.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8
HMC998LP5E
v01.0813
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 20 GHz
Amplifiers - Linear & Power - SMT
Application Circuit
NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network.
9
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC998LP5E
v01.0813
GaAs pHEMT MMIC
2 WATT POWER AMPLIFIER, 0.1 - 20 GHz
Amplifiers - Linear & Power - SMT
Notes:
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
10