PDB-707-100-xx - Digi-Key

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PHOTONIC 32 CHANNEL DETECTOR PRE-AMP BOARD ASSEMBLY
Type PDB-707-100-XX
DETECTORS INC.
CAUTION: ESD SENSITIVE DEVICE
DESCRIPTION
PDB-707-100-XX This 32 channel Pre-Amplifier Board
Assembly (PABA) is a side-by-side stackable platform
with built-in voltage regulators, and eight precision CMOS
quad op-amps. Low offset voltages and input bias currents,
enhance operational stability at high voltage gains. Standard one meg feedback resistors produce a 1 KHz bandwidth, with optional selected resistors available. The
following options can be used with this PABA.
DESCRIPTION - OPTION D
PDB-707-100-D This option is designed to use two 16
element, blue enhanced silicon photodiode arrays. The
arrays are on .062 [1.27] pitch with .010 [0.25] gaps. Each
element is 2.51 mm2 in size. The low leakage, high shunt
detectors match up well with the CMOS op-amps on the
PABA. This version can be used for optical color sorters,
food processing, inspection equipment, optical scanners,
and other multi-element photodiode array applications.
DESCRIPTION - OPTION DS
PDB-707-100-DS This option is designed to use two
PDB-C216S, 16 element, blue enhanced silicon
photodiode arrays, with X-ray fluoroscopic screens. The
ZnCdS:Ag phosphorus doped screen emission spectrum
is 530 nm (green). X-ray absorbtion is 9.66/26.7 KeV,
with an effective atomic number of 38.4. This version is
ideal for X-ray package inspection, diagnostic fluoroscopy
and PCB examination.
DESCRIPTION - OPTION DC
PDB-707-100-DC This option is designed to use two
PDB-C216C, 16 element, blue enhanced silicon photodiode arrays, with cesium iodide thallium doped CsI (Ti),
X-ray scintillation crystals. These arrays are used in
40 KeV to 120 Kev X-ray applications. Other uses include
medical CT, baggage scanners, food processing
and X-ray package inspection scanners.
Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications
are subject to change without notice.
PAGE 1 OF 6
[FORM NO. 100-PDB-707-100-XX REV E]
PHOTONIC 32 CHANNEL DETECTOR PRE-AMP BOARD ASSEMBLY
Type PDB-C216-SP Used on PDB-707-100-D
DETECTORS INC.
PACKAGE DIMENSIONS INCH [mm]
C
L
CL
±.005 [.13]
.992 [25.20]
.062 [1.57]
ACTIVE AREA
.100 [2.54]
1
3
.373 [9.47]
.062 [1.57]
.800 [20.32]
16X ANODE
5 7 9 11 13 15 17
COMMON
CATHODE
CL
.145 [3.69]
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
.072 [1.84]
ACTIVE AREA
.300
[7.62]
.425
[10.80]
2X Ø.018 ROUND
PIN HEADER
STRIP
CL
2 4 6 8 10 12 14 16 18
COMMON CATHODE
.100 [2.54]
ACTIVE AREA
CL C
TYP
L
ANODE 16 PLACES
.010 [0.25] GAP
.048 [1.22]
ACTIVE AREA
ELEMENT NO.
1
2
3
4
5
6
7
8
9
PIN CONNECTIONS
PIN NO.
ELEMENT NO.
1
10
4
11
3
12
6
13
5
14
8
15
7
16
10
CATHODE
9
CATHODE
PIN NO.
12
11
14
13
16
15
18
2
17
.229 [5.82]
16 ELEMENT PHOTODIODE PACKAGE
ACTIVE AREA = 2.31mm2 PER ELEMENT
DESCRIPTION
The PDB-C216-SP is a common cathode,
monolithic silicon PIN photodiode 16
element array. Designed to be stacked end
to end to form a line of optical pixels.
-20
+75
O
TS
Soldering Temperature*
+265
O
IL
Light Current
C
C
mA
0.3
0.2
0.1
0
*1/16 inch from case for 3 secs max
1200
Operating Temperature Range
0.4
1100
TO
C
900
O
1000
+100
800
-40
%
00
=1
E
Q
0.5
700
Storage Temperature
0.6
600
TSTG
500
V
500
50
400
Reverse Voltage
300
VBR
SPECTRAL RESPONSE
0.7
190
ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted)
SYMBOL
PARAMETER
MIN
MAX
UNITS
APPLICATIONS
Card reader
Scanners
Character recognition
RESPONSIVITY (A/W)
FEATURES
.062 inch centers
Stackable
Blue enhanced
Low capacitance
WAVELENGTH (nm)
ELECTRO-OPTICAL CHARACTERISTICS (TA=25OC unless otherwise noted, without scintillator)
SYMBOL CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ISC
Short Circuit Current
H = 100 fc, 2850 K
ID
Dark Current
H = 0, V R = 5 V
RSH
Shunt Resistance
H = 0, V R = 10 mV
TC RSH
RSH Temp. Coefficient
CJ
18
mA
28
5
50
nA
200
MΩ
H = 0, V R = 10 mV
-8
% / oC
Junction Capacitance
H = 0, V R = 0 V**
40
λrange
Spectral Application Range
Spot Scan
λp
Spectral Response - Peak
Spot Scan
VBR
Breakdown Voltage
I = 10 m A
NEP
Noise Equivalent Power
VR = 10 V @ Peak
Response Time
RL = 50 Ω VR = 10 V
tr
100
350
15
60
pF
1100
nm
950
nm
30
V
2x10-14
15
W/
Hz
nS
Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications
[FORM NO. 100-PDB-707-100-XX REV E]
are subject to change without notice. ** f = 1 MHz
PAGE 2 OF 6
PHOTONIC 32 CHANNEL DETECTOR PRE-AMP BOARD ASSEMBLY
Type PDB-C216-S Used on PDB-707-100-DS
DETECTORS INC.
PACKAGE DIMENSIONS INCH [mm]
CL
CL
±.005 [.13]
.992 [25.20]
.062 [1.57]
.100 [2.54]
ACTIVE AREA
1
.373 [9.47]
.800 [20.32]
16X ANODE
5 7 9 11 13 15 17
3
.062 [1.57]
COMMON
CATHODE
C
L
.145 [3.69]
.300
[7.62]
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
.072 [1.84]
ACTIVE AREA
.425
[10.80]
2X Ø.018 ROUND
PIN HEADER
STRIP
C
L
2 4 6 8 10 12 14 16 18
SCREEN
COMMON CATHODE
.100 [2.54]
ACTIVE AREA
C
TYP
L C
L
ANODE 16 PLACES
.010 [0.25] GAP
.048 [1.22]
ACTIVE AREA
ELEMENT NO.
1
2
3
4
5
6
7
8
9
PIN CONNECTIONS
PIN NO.
ELEMENT NO.
1
10
4
11
3
12
6
13
5
14
8
15
7
16
10
CATHODE
9
CATHODE
PIN NO.
12
11
14
13
16
15
18
2
17
.229 [5.82]
.277 [7.04]
FLUOROSCOPIC X-RAY SCREEN IS A 19.0% EFFICIENT,
ZnCdS:Ag PHOSPHORUS DOPED SCREEN WITH A 530 nm
(GREEN) EMISSION FOR 9.66/26.7 KeV X-RAY ABSORPTION
APPLICATIONS.
16 ELEMENT X-RAY PHOTODIODE PACKAGE
WITH SCINTILLATION SCREEN
ACTIVE AREA = 2.31mm2 PER ELEMENT
APPLICATIONS
Luggage X-ray
X-Ray scanner
X-Ray inspection
DESCRIPTION
The PDB-C216-S is a common cathode,
monolithic silicon PIN photodiode 16
element array. Designed to be stacked end
to end to form a line of pixels. Supplied with
a fluoroscopic X-ray scintillation screen.
+75
O
+265
O
IL
Light Current
500
C
C
mA
0.3
0.2
0.1
0
*1/16 inch from case for 3 secs max
1200
-20
1100
Operating Temperature Range
0.4
900
TO
C
1000
O
800
+100
700
-40
%
00
=1
QE
0.5
600
Storage Temperature
Soldering Temperature*
V
500
TSTG
TS
50
400
Reverse Voltage
0.6
300
VBR
SPECTRAL RESPONSE
0.7
190
ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted)
SYMBOL
PARAMETER
MIN
MAX
UNITS
RESPONSIVITY (A/W)
FEATURES
.062 inch centers
Stackable
Scintillation screen
Low capacitance
WAVELENGTH (nm)
ELECTRO-OPTICAL CHARACTERISTICS (TA=25OC unless otherwise noted, without scintillator)
SYMBOL CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ISC
Short Circuit Current
H = 100 fc, 2850 K
ID
Dark Current
H = 0, V R = 5 V
Shunt Resistance
H = 0, V R = 10 mV
TC RSH
RSH Temp. Coefficient
CJ
18
mA
28
5
50
nA
200
MΩ
H = 0, V R = 10 mV
-8
% / oC
Junction Capacitance
H = 0, V R = 0 V**
40
λrange
Spectral Application Range
Spot Scan
λp
Spectral Response - Peak
Spot Scan
VBR
Breakdown Voltage
I = 10 m A
RSH
NEP
tr
Noise Equivalent Power
VR = 10 V @ Peak
Response Time
RL = 50 Ω VR = 10 V
100
350
15
60
pF
1100
nm
950
nm
30
V
-14
2x10
15
W/
Hz
nS
Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications
[FORM NO. 100-PDB-707-100-XX REV E]
are subject to change without notice. ** f = 1 Mhz
PAGE 3 OF 6
PHOTONIC 32 CHANNEL DETECTOR PRE-AMP BOARD ASSEMBLY
DETECTORS INC. Type PDB-C216-C Used on PDB-707-100-DC
PACKAGE DIMENSIONS INCH [mm]
C
L
CL
±.005 [.13]
.992 [25.20]
.062 [1.57]
.100 [2.54]
ACTIVE AREA
1
3
.373 [9.47]
.800 [20.32]
16X ANODE
5 7 9 11 13 15 17
.062 [1.57]
COMMON
CATHODE
CL
.145 [3.69]
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
.072 [1.84]
ACTIVE AREA
.300
[7.62]
CsI(Ti)
CRYSTAL
ARRAY
.425
[10.80]
2X Ø.018 ROUND
PIN HEADER
STRIP
CL
2 4 6 8 10 12 14 16 18
COMMON CATHODE
.100 [2.54]
CL C
TYP
L
.010 [0.25] GAP
.048 [1.22]
ACTIVE AREA
ELEMENT NO.
1
2
3
4
5
6
7
8
9
.229 [5.82]
ACTIVE AREA
ANODE 16 PLACES
PIN CONNECTIONS
PIN NO.
ELEMENT NO.
1
10
4
11
3
12
6
13
5
14
8
15
7
16
10
CATHODE
9
CATHODE
PIN NO.
12
11
14
13
16
15
18
2
17
.399 [10.13]
X-RAY SCINTILLATOR IS A CESIUM IODIDE, THALLIUM
DOPED, CsI(Ti) CRYSTAL. THE EMISSION IS 565 nm AND
HAS 99% ABSORPTION OF X-RAY ENERGY.
16 ELEMENT X-RAY PHOTODIODE PACKAGE
WITH CsI(Ti) SCINTILLATION CRYSTALS
ACTIVE AREA = 2.31mm2 PER ELEMENT
DESCRIPTION
The PDB-C216-C is a common cathode,
monolithic silicon PIN photodiode 16
element array. Designed to be stacked end
to end to form a line of pixels. Supplied with
X-Ray CsI(Ti) scintillation crystals.
-20
+75
O
TS
Soldering Temperature*
+265
O
IL
Light Current
C
C
mA
0.3
0.2
0.1
0
*1/16 inch from case for 3 secs max
1200
Operating Temperature Range
0.4
1100
TO
C
900
O
1000
+100
800
-40
%
00
=1
E
Q
0.5
700
Storage Temperature
0.6
600
TSTG
500
V
500
50
400
Reverse Voltage
SPECTRAL RESPONSE
0.7
300
VBR
APPLICATIONS
Luggage X-ray
X-Ray scanner
X-Ray inspection
190
ABSOLUTE MAXIMUM RATING (TA=25OC unless otherwise noted)
SYMBOL
PARAMETER
MIN
MAX
UNITS
RESPONSIVITY (A/W)
FEATURES
.062 inch centers
Stackable
CsI(Ti) crystals
Low capacitance
WAVELENGTH (nm)
ELECTRO-OPTICAL CHARACTERISTICS (TA=25OC unless otherwise noted, without scintillator)
SYMBOL CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ISC
Short Circuit Current
H = 100 fc, 2850 K
ID
Dark Current
H = 0, V R = 5 V
Shunt Resistance
H = 0, V R = 10 mV
TC RSH
RSH Temp. Coefficient
CJ
Junction Capacitance
RSH
λrange
5
50
nA
MΩ
H = 0, V R = 10 mV
-8
% / oC
H = 0, V R = 0 V**
40
Spectral Application Range Spot Scan
Spectral Response - Peak
Spot Scan
VBR
Breakdown Voltage
I = 10 m A
Noise Equivalent Power
VR = 10 V @ Peak
Response Time
RL = 50 Ω VR = 10 V
tr
mA
28
200
λp
NEP
18
100
350
15
60
pF
1100
nm
950
nm
30
V
2x10-14
15
W/
Hz
nS
Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications
are subject to change without notice. ** f = 1 MHz
[FORM NO. 100-PDB-707-100-XX REV E]
PAGE 4 OF 6
PHOTONIC 32 CHANNEL DETECTOR PRE-AMP BOARD ASSEMBLY
Type PDB-707-100-XX
DETECTORS INC.
AMPLIFIER SPECIFICATION PER CHANNEL
TA = 25° C, V + = 5 V, V- = 0 V, VC M = 1.5 V, VO = 2.5 V and RL > 1 M
CHARACTERISTIC
TEST CONDITIONS
INPUT OFFSET VOLTAGE (Vos)
MIN
UNLESS OTHERWISE NOTED
TYP
MAX
UNITS
INITIAL OFFSET
350
1000
mV
LONG TERM OFFSET STABILITY
15
µV/MONTH
AVERAGE INPUT OFFSET
DRIFT (TCVos)
RL = 100 KΩ
1
µV/°C
INPUT BIAS CURRENT (IB)
OFFSET CURRENT, VCM=0
INPUT OFFSET CURRENT (I OS)
INPUT VOLTAGE RANGE (IVR)
COMMON MODE
REJECTION VCM ± 10 V
INPUT VOLTAGE NOISE (en)
100
pA
100
pA
±12
V
VOLTAGE 0, f=100 Hz
40
nV/√Hz
VOLTAGE 0, f=1 Khz
30
nV/√Hz
INPUT CURRENT NOISE (in)
TYP f=1 KHz
1.8
fA/√Hz
FREQUENCYRESPONSE
UNITY GAIN, SMALL SIGNAL
0.8
1.0
MHz
SLEW RATE, UNITY GAIN
1.0
1.8
V/µs
9
Mhz
CLOSED LOOP GAIN (CLBW)
SUPPLY CURRENT (ISY)*
±11
AVCL=+5 V
27.2
V = +15 V, V0 = 7.5 V
mA
15
SHORT CIRCUIT CURRENT
POWER SUPPLY
32
OPERATING VOLTAGE
mA
±4.5
±15.5
V
NOTE: 8 EACH NATIONAL P/N: LMC6084, CMOS QUAD OPERATIONAL AMPLIFIER USED IN ASSEMBLY. * TOTAL ASSEMBLY SUPPLY CURRENT
AMPLIFIER ABSOLUTE MAXIMUM RATING (TA=25°C UNLESS OTHERWISE NOTED)
PARAMETER
MIN
MAX
UNITS
SUPPLY VOLTAGE
16
±V
DIFFERENTIAL INPUT VOLTAGE
±16
V
STORAGETEMPERATURE
-55
+125
°C
OPERATINGTEMPERATURE
0
+70
°C
CAUTION: ESD SENSITIVE DEVICE
100 MOhm
USER SUPPLIED FEEDBACK
RESISTOR IN PARALLEL OR
OTHER VALUES SUPPLIED
BY FACTORY
1 pF
V+
OP
AMP
+
PHOTODIODE
OUTPUT
VCIRCUIT
GROUND
SINGLE OP-AMP STAGE SCHEMATIC
Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications
are subject to change without notice.
PAGE 5 OF 6
[FORM NO. 100-PDB-707-100-XX REV E]
PHOTONIC 32 CHANNEL DETECTOR PRE-AMP BOARD ASSEMBLY
Type PDB-707-100-XX
DETECTORS INC.
MECHANICAL DIMENSIONS
PACKAGE DIMENSIONS INCH [mm]
5.000 [127.00]
CL
.188 [4.76]
CL
4.624 [117.45]
8X Ø.096 MOUNTING HOLES
.235 [5.97]
.235 [5.97]
C
L
C
L
1.530 [38.86]
1.530 [38.86]
2.000 [50.80]
C
L
C
L
.876 [22.25]
2.063 [52.40]
.313 [7.95] CHIP HEIGHT
CL
C
L
CL
2.500 [63.50]
CONFORMAL COAT
.152 [3.86]
DIP SOCKETS
.357 [9.07]
.545 [13.84]
.300 [7.62]
.062 [1.57]
Ø0.025 TYP
.165 [4.19]
C
L
1.660 [42.16]
CL CONFORMAL
COAT
3.620 [91.95]
.450 [11.43]
.240 [6.10]
C
L
C
L
C
L C
L
ASSEMBLY SHOWN WITH PDB-C216-C IN THIS VIEW
ELECTRICAL CONNECTIONS
32 ELEMENT AMPLIFIER CONNECTIONS
J3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
PIN DETECTOR CHANNEL
GND
U7-1
2
U7-14
4
U7-8
6
U7-7
8
U8-1
10
U8-14
12
U8-7
14
U8-8
16
U9-1
18
U9-14
20
U9-8
22
U9-7
24
U10-1
26
U10-14
28
U10-8
30
U10-7
32
GND
J2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
PIN DETECTOR CHANNEL
GND
U3-14
1
U3-1
3
U3-7
5
U3-8
7
U4-14
9
U4-1
11
U4-7
13
U4-8
15
U5-14
17
U5-1
19
U5-7
21
U5-8
23
U6-14
25
U6-1
27
U6-7
29
U6-8
31
GND
POWER CONNECTIONS
J4 PIN 1 +4.5 TO +15V
J1 PIN 1 +4.5 TO +15V
PIN 2 COMMON
PIN 2 COMMON
PIN 3 -4.5 TO -15V
PIN 3 -4.5 TO -15V
CAUTION: ESD SENSITIVE DEVICE
5.000 [127.00]
CL
CL
.188 [4.76]
1.875 [47.63]
± VOLTAGE
SUPPLY
.235 [5.97]
4.624 [117.45]
C
C
L
L
PIN #1
.100 [2.54]
.876 [22.25]
PIN #2
CL
C
L
C
L
.150 [3.81]
J4
1.530
[38.86]
16 CHANNEL OUTPUTS
± VOLTAGE
SUPPLY
2.000
[50.80]
J1
CL
J3
.450 [11.43]
.690 [17.53]
J2
.300 [7.62]
8X Ø.096 HOLE
C
L
3.620 [91.95]
C
L
TOP VIEW
CL
.165 [4.19]
CL C
L
NOTE: THE SUPPLY VOLTAGE & OUTPUT TERMINALS
ARE Ø.025 [Ø0.64] ON .100 [25.4] CENTERS
Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications
are subject to change without notice.
PAGE 6 OF 6
[FORM NO. 100-PDB-707-100-XX REV E]
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