8.68 – 8.98 GHz InGaP/GaAs MMIC
Dual Output VCO
May 2010 – Rev 1
EWV0910ZZ
Production
Voltage Controlled Oscillators – Bare Die
Features
Device Photo
Dual Output Frequencies
Push-push Architecture
Phase Noise : -111 dBc/Hz @ 100 kHz
Output Power at fout: +18 dBm, typical
Output Power at fout/2: 0 dBm, typical
Die Size: 2.0 x 3.2 x 1mm
100% RF and DC Tested
RoHS Compliant
Block Diagram
Description
The Endwave EWV0910ZZ is a high performance
InGaP/GaAs HBT MMIC voltage controlled oscillator
which provides a set of dual outputs ideal for applications
which require 8.68 to 8.98 or 4.34 to 4.49 GHz outputs.
The device boasts state of the art phase noise at better
than - 111 dBc/Hz at a 100 kHz offset . This device can
be used in a wide range of applications from defense
electronics to commercial communication systems. All
die are 100% DC and RF tested and visually inspected to
Mil-Std-883 Method 2010.
Electrical Characteristics (Temperature = +25 °C, Vcc = 4.20V)
Parameter
Min.
Frequency Range (fout)
Max.
Units
8.68
8.98
GHz
Frequency Range (fout/2)
4.34
4.49
GHz
Output Power (fout)
+11
+18
+21
dBm
Output Power (fout/2)
-4
0
+5
dBm
Phase Noise @ fout
100 kHz Offset, Vtune = +5V
Typ.
-111
Tune Voltage
2
Supply Current
140
180
Tune Port Leakage Current, Vtune = 13V
Output Return Loss
dBc/Hz
13
V
210
mA
25
uA
5
dB
46
22
dBc
dBc
Harmonic / Sub-harmonics
½
2nd
35
15
Pulling (into a 2:1 VSWR)
MHz pp
Pushing @ Vtune = 5V
6
MHz/V
Frequency Drift Rate
1
MHz/ C
Specifications and data presented may change without notice.
Endwave Corporation 130 Baytech Drive San Jose CA 95134 877-Endwave
www.endwave.com
Page 1 of 4
8.68 – 8.98 GHz InGaP/GaAs MMIC
Dual Output VCO
May 2010 – Rev 1
EWV0910ZZ
Production
RF Frequency vs. Tuning Voltage, VCC = 4.2V
RF Sensitivity vs. Tuning Voltage, VCC = 4.2V
180
9.4
160
Sensitivity (MHz/V)
Frequency (GHz)
9
8.8
8.6
8.4
+25 C
-40 C
+85 C
8.2
140
120
100
80
60
+25 C
-40 C
+85 C
40
20
8
0
2
3
4
5
6
7
8
9
10
11
12
13
2
3
4
5
Tuning Voltage (V)
4
18
3
RF Output Power (dBm)
RF Output Power (dBm)
5
19
17
16
15
14
13
+25 C
-40 C
+85 C
11
7
8
9
10
11
12
13
RF/2 Output Power vs. Tune Voltage, VCC = 4.2V
20
12
6
Tuning Voltage (V)
RF Output Power vs. Tune Voltage, VCC = 4.2V
10
2
1
0
-1
-2
+25 C
-40 C
+85 C
-3
-4
-5
2
3
4
5
6
7
8
9
10
11
12
2
13
3
4
5
Tuning Voltage (V)
6
7
8
9
10
11
12
13
Tuning Voltage (V)
SSB Phase Noise @ RF Output vs. Vtune = 8V
SSB Phase Noise @ RF Output vs. Tuning Voltage
0
-30
@ 10KHz
-40
@ 100KHz
SSB Phase Noise (dBc/Hz)
-20
SSB Phase Noise (dBc/Hz)
Voltage Controlled Oscillators – Bare Die
9.2
-50
-60
-70
-80
-90
-100
-110
-20
-40
-60
-80
-100
+25°C
-40°C
+85°C
-120
-140
-160
-120
2
3
4
5
6
7
8
9
Tuning Voltage (V)
10
11
12
13
100
1,000
10,000
100,000
1,000,000 10,000,000
Frequency Offset (Hz)
Specifications and data presented may change without notice.
Endwave Corporation 130 Baytech Drive San Jose CA 95134 877-Endwave
www.endwave.com
Page 2 of 4
8.68 – 8.98 GHz InGaP/GaAs MMIC
Dual Output VCO
May 2010 – Rev 1
EWV0910ZZ
Production
Voltage Controlled Oscillators – Bare Die
Assembly Drawing
EWV0910ZZ
Outline Drawing
NOTE: Large-value 10 nF capacitors need to be added to the VCC bias
line for best phase noise performance.
EWV0910ZZ
Electrostatic Sensitive Device
Observe Handling Precautions
Bond Pad #1 - RF Output
Bond Pad #2 - VCC Note 1
Bond Pad #3 - Vtune
Note 1
Bond Pad #4 - RF/2 Output A
Bond Pad #5 - RF/2 Output B
Bond Pad #6 - VCC Note 1
VCC bias maybe applied to Pad 2 or Pad 6.
Dimensions in mm [inches]. Die thickness is 0.004”.
Bond Pad and backside metallization is gold.
Specifications and data presented may change without notice.
Endwave Corporation 130 Baytech Drive San Jose CA 95134 877-Endwave
www.endwave.com
Page 3 of 4
8.68 – 8.98 GHz InGaP/GaAs MMIC
Dual Output VCO
May 2010 – Rev 1
EWV0910ZZ
Production
Voltage Controlled Oscillators – Bare Die
Absolute Maximum Ratings
Typical Supply Current
Supply Voltage, VCC
+4.5V
Vcc
Icc
Tune Voltage, Vtune
+0 to +15 V
4.0 V
160mA
Channel Temperature
135°C
4.2 V
180 mA
Continuous Power Dissipation at 25°C
1.32W
4.4 V
200 mA
Supply Current, Icc
330mA
Storage Temperature
-65° to +150°C
Operating Temperature
-40° to +85°C
Typical Application
EWU Series
Upconverters
fout/4
N
fout
RF out
fout/2
Vt
Vc
EWV0910ZZ
EWA Series
Fixed
Attenuators
IF Inputs
EWX Series
Frequency Multipliers
DC – 3.5 GHz
Support Documentation
Support documentation including Assembly Notes, Application Notes
and Qualification Procedures can be found on our website at
www.endwave.com.
Ordering Information
Part Number
EWV0910ZZ
EWV0910ZZ-EV
Description
RoHS compliant bare die in waffle or gel packs
EWV0910ZZ in a Connectorized Test Fixture
Specifications and data presented may change without notice.
Endwave Corporation 130 Baytech Drive San Jose CA 95134 877-Endwave
www.endwave.com
Page 4 of 4