Survey of Trends for Integrated
Point-of-Load Converters
P
Power
Supply
S
l On
O Chi
Chip
Prepared by:
Arthur Ball, Michele Lim, Julu Sun, Qiang Li
Prof. Khai D. T. Ngo, Prof. Fred C. Lee
Presented by
Fred C.
C Lee and Qiang Li
Center for Power Electronics Systems
Sept 22-24, 2008
1
Expanded Research to Lower Power
IT Applications
pp
$20- $30 Billion Dollar Industryy
Telecom
Network
IT
Industries
Server
Laptop
Desktop
2
Present Server Power Architecture
VID:0.95~1.7V/ 120A/ 100A/μs
VR
1.2V/ 7.2A/ 50A/μs
Processor1
3.3V/ 30mA/
VID:0.95~1.7V/ 120A/ 100A/μs
VR
1.2V/ 7.2A/ 50A/μs
Processor2
3.3V/ 30mA/
VR
AC
12V
PSU
PFC
Eng.
St.
D2D
VR
1.5V/ 3(6)A/ 1(2)A /ns
1.2V/ 3.6(7.2)A/ 1(2)A /ns
1.8V/ (0.65)A / (0.025)A /ns
5V
Chipset
1.3V/ (0.5)A/ (1)A /ns
VR
3.3V/ 0.14(0.23)A/ 0.36(0.55)A /ns
3.3V
VR
1 8V
1.8V
0.9V
Memory
VR
12V
5V
HDD
12V
5V
O
Other
3.3V
3
Power Architecture for Laptop
AC input: 90~265V
LDO
AC/DC
adapter
d t
19 V
8.7-19 V
VR and LDO
VR
VR
VR
CPU
Graphics
DDR
16 W
18 W
switch
8 7-16
8.7
16.8
8V
Battery
charger
pack
VR
Boost
LCD
Adaptor
VRs
Power path
Battery
Power
Keep alive
I/O power
VR
Main power
25 W
16.5 W
54 W
Embedded Power
(Semiconductor Companies)
(Delta)
4
Point-of-Load Converters
Non-Isolated
Non
Isolated Buck Type
MP3 Player
Cellular phone
Possible
Applications
Digital
Camera
GPS
PDA
Telecom
Automotive
Electronics
L t
Laptop
application …
Market Size: $4B
5
POL: Voltage Regulator Module
320 H
320nH
CB
Controller
1.2mF
320nH
Pentium III
1.5V
30A
1GHz
Controller
320nH
Controller
320nH
Controller
6
Lower Power POL
Monolithic Integration
S
top1
L
Drive
S
r
7
7
More Integrated POL
IC
L
S
top1
L
DriveS
r
Big market for Integrated POL; Big challenge for inductor integration.
8
Integration of POL
Line represents today’s thermal limit versus frequency
For converters of 12V or less
50W
• Discrete
• Active Integration
• Active & Passive Integration
5W
0.5W
*
500kHz
1MHz
10MHz
Data points are referred to “Reference IV”
Today’s
monolithic
lithi limit
li it
100MHz
9
POL Products & Research
™ Shown here is the demarcation between industry products and
research territory, as seen today.
50A
5A
Industry Products
0.5A
Research
500kHz
1MHz
* Data points are referred to “Reference IV”
10MHz
100MHz
1GHz
10
Presentation Outline
™ Device Technologies
™ Magnetic Material
™ Level of Integration
g
™ Integration Example
11
Device Technology for Different POL
-- VDMOS & Trench MOSFET
Current
VRM for Intel CPU with Infineon Trench MOSFET
Discrete
VDMOS
40A
Discrete
Trench MOSFET
20A
Frequency
100kHz
1MHz
12
Device Technology for Different POL
-- Trench MOSFET with Advanced packaging
Current
40A
20A
Discrete
VDMOS
Discrete
Trench MOSFET
Discrete
Trench MOSFET with advanced advanced
packaging
Frequency
100kHz
1MHz
13
Packaging Inductances
-- LF Pak
Wire Free Group
Ls≈1nH
Ld ≈ 3nH
LFPAK
SuperSO8
PowerPAK
14
Advanced Packaging Techniques
IR DirectFET & Infineon CanPAK
PolarPak from Vishay
Vishay, ST
Vishay ST
Vishay,
Ls=0.1nH
Ls=0.1nH
15
Integration by Co-Packaging
-- Dr.MOS
Power One
On Semi
Low RDS_on FETs
Synchronous
buck PWM
controller
Driver
circuit
Philips
16
Packaging Inductances
(from Renesas with same Silicon Die)
SO8
LFPAK
Dr.MOS
Ls=1.5nH Ld=3nH
Ls=1nH Ld=3nH
Ls=0.1nH Ld=2.5nH
17
Device Technology for Different POL
-- Lateral MOSFET & Lateral-Trench MOSFET
Current
40A
20A
Discrete
VDMOS
Discrete
Trench MOSFET
100kHz
Discrete
Trench MOSFET with advanced
advanced packaging
1MHz
Discrete L t l
Lateral‐
Trench MOSFET
Integrated Lateral MOSFET Frequency
18
Survey on Device Technology Trend
Trench with advanced‐packaging
100A
Di
Discrete Trench
t T
h
FDB7030
HUF76139
HUF76139 [3.6]
[3.7]
IR Direct FET
[3.9]
HAT2168
68
[3.8]
CSD16410
[3.11]
Si7886DP
[3.5]
FDS6680
[3 3]
[3.3]
FDS6612A
[3.2]
10A
Si4539ADY
[3.1]
1A
Renesas
DrMOS
[3.10]
GWS24N07
[3.12]
Discrete Lateral
Volterra
FDS6898
[3.4]
MAX8654
[3.13]
TPS54317
[3.15]
Di
Discrete Lateral‐Trench
t L t lT
h
MAX8566
[3.14]
Monolithic Integrated Lateral
TPS62290 TPS6235x
[3.16] [3.17]
MAX8640
[3 18]
[3.18]
Frequency
q
y
100kHz
* Data points are referred to “Reference III”
1MHz
19
New Device FOM for Low
Voltage
g Application
pp
High Voltage
Low Voltage
IRFP460A for boost converter
HAT2168 for VRM application
400V,10.3A,100kHz peak Qgs2=2.9nC
Qgd=29nC
12V, 20A, 600kHz
Qgs2=1nC, Qgd=2.65nC
Qgd
switching loss
FOM = Qgd ⋅ Rds _ on
Cond. loss
FOM 2 = (Qgd + K gs 2 ⋅ Qgs 2 ) ⋅ Rds _ on
Where Kgs2 is a function of gate drive voltage: K gs2 (VDR ) = 1 +
VDR 2Vplt (VDR − Vplt )
Vplt − Vth Vin ⋅ I o ⋅ Rg
20
40
35
30
25
20
15
10
5
0
Vishay ‐ Trench
Infineon ‐
Infineon
Trench 2
Renesas ‐ Trench D8
Infineon ‐ Trench 3
Renesas ‐ Trench D9
Ciclon ‐ Lateral‐Trench
Greatwall ‐ Lateral
5
10
15
20
25
Vds (V)
30
FOM
M2=(Qgd+
+Kgs*Qgs2))*Rds
FOM=Qgd*Rds
FOM for Low Voltage Devices
35
Infineon ‐ Trench
80
60
Vishay ‐ Trench
40
Renesas ‐ Trench D8
Infineon ‐ Trench 3
20
0
Renesas ‐ Trench D9
Greatwall ‐ Lateral
5
10
15
Ciclon ‐ Lateral‐Trench
20 25
Vds (V)
30
35
21
Presentation Outline
™ Device Technologies
™ Magnetic Materials
™ Level of Integration
g
™ Integration Example
22
Frequency Range of Conventional Materials
NiZn
MnZn
Amorphous material
P
Permalloy
ll
Kool Mu
Iron power
10k
100k
1M
10M
100M
The frequency range for most conventional magnetic material is
below 10MHz.
23
Frequency Range of Emerging materials
Granular film material (e.g. CoZrO)
(S. Ohnuma, T. Masumoto…, Research Institute for Electric
and Magnetic Materials, Sendai, Japan)
( Weidong Li, R. Sullivan…, Dartmouth College)
Polymer bonded materials (e.g.
(e g Ferrite
Polymer Compounds)
( K.W.E.Cheng',C .Y.Tang…,Hong Kong polytechnic Univ.)
((Jae Y. Park,, Mark G. Allen…,, Georgia
g Institute of Technology.)
gy )
Composite magnetic material
(Fe/SiO2 composite)
(John Q. Xiao, University of Delaware, USA)
Electroplated alloy material (e.g. CoNiFe)
( S. Kelly, S. Roy…, National University of Ireland )
1M
10M
100M
There are many ongoing research focus on developing the
magnetic material suitable for more than 10MHZ applications.
24
Frequency Dependence of Permeability
for Different Materials
Conventional material
Initial permeability
Emerging material
1000
Electroplated alloy material--- CoNiFe
500
MnZn---3F51
Granular film material---CoZrO
100
NiZn---4F1
Iron powder---Ferroxcube 2P50
50
C
Composite
it magnetic
ti material---Fe/SiO2
t i l F /SiO2 composite
it
100k
1M
2M
3M
4M
5M
~
Fs (Hz)
10M
20M
100M
25
Core Loss Density of Different
Magnetic
g
Materials
Iron powder
Pv (Kw
w/m3)
(Ferroxcube Ui=40~90)
Fe/SiO2 composite
Kool Mu
NiZn
(Ferrocube 4F1
Ui=80)
Electroplated alloy
(Magnetics Ui=60)
((CoNiFe))
MnZn
(Ferrocube 3F51
Ui=650)
Granular film
(CoZrO)
Calculation
Delta B=40mT
Fs (KHz)
26
Integrated Magnetic Components
with Different Materials
Po
MnZn Ferrite
500W
[2.34] Fujiwara ‘98
[2.35] Meinhardt ‘99
Ferrite Polymer
Compounds
[2.29] S. H. Chung’01
[1.6] E. Waffenschmidt ’05,
05, MagLam [1
[1.4]
4] 20 nH
nH, S
S.
Roy ’07, CoNiFe
50W
Electroplated
alloy-CoNiFe
[2.20] Lim ‘07
[2.22] Prieto ‘02
[2.21] I. Kowase ‘05
[2.4] R.Sullivan ’04, CoZrO
Granular film
material
[2.31] J. A. Cobos ’97
5W
NiZn Ferrite
[2.5] T. O'Donnell ‘04
[2 13] R
[2.13]
R.Sullivan‘03,
Sullivan‘03 CoZrO
[2.25] Ludwig ‘03
[2.23] Moon ‘05
0 5W
0.5W
[2.18]
Mikura ‘06
[2.9] Yun ‘04
[2.10] Cian ÓMathùna ‘08
[2 8] M
[2.8]
Musunurii ‘05
[2.1] Brunet ‘02
[2.2] Iyengar ‘99
Permalloy
100kHz
1MHz
10MHz
* Data points are referred to “Reference I” & “Reference II”
100MHz
Fs
27
Ferrite Polymer Compounds (FPC)
[1.6]
-- Maglam
g
Maglam
Winding
PCB
Advantage of Maglam
Specific resistance
49.5Gohm
Low eddy current loss
Lamination temperature
180oC
Compatible to PCB process
Disadvantage of Maglam
Permeability
17
S
Saturation
i flux
fl density
d i
300 T
300mT
* [1.6] Eberhard Waffenschmidt, … IEEE TRANSACTIONS, 2005;
Research in the Philips and Isola.
28
Integrated Magnetic Components
with Different Materials
Po
MnZn Ferrite
500W
Ferrite Polymer
y
Compounds
[2.34] Fujiwara ‘98
[2.35] Meinhardt ‘99
[2.29] S. H. Chung’01
[1 6] E
[1.6]
E. Waffenschmidt ’05
’05, MagLam
50W
[1.4] 20 nH, S.
Roy ’07, CoNiFe
Electroplated
[2.20] Limalloy-CoNiFe
‘07
[[2.22]] Prieto ‘02
[2.21] I. Kowase ‘05
[2.4] R.Sullivan ’04, CoZrO
Granular film
material
[2.31] J. A. Cobos ’97
5W
NiZn Ferrite
[2.5] T. O'Donnell ‘04
[2.13] R.Sullivan‘03, CoZrO
[2.25] Ludwig ‘03
[2.23] Moon ‘05
0 5W
0.5W
[2.18]
Mikura ‘06
[2.9] Yun ‘04
[2.10] Cian ÓMathùna ‘08
[2.8] Musunuri ‘05
[2.1] Brunet ‘02
[2.2] Iyengar ‘99
Permalloy
100kHz
1MHz
10MHz
* Data points are referred to “Reference I” & “Reference II”
100MHz
Fs
29
Granular film material
– CoZrO [[2.4]]
™ The core loss density of
CoZrO is smaller than that
of
Electroplated
alloy
CoNiFe and NiZn Ferrite
4F1.
Specific Power Loss
S
s (kW/m3)
Permeability
™ The permeability of CoZrO
spectrum is approximately
flat up to1GHz.
10000
3MHz
4F1 NiZn
Ferrite
1000
CoNiFe
100
CoZrO
10
1
10
100
1000
Peak Flux Density (mT)
* [2.4] C. R. Sullivan,… IEEE TRANSACTIONS, 2004;
Research in the Thayer School of Engineering.
30
Presentation Outline
™ Device Technologies
™ Magnetic Materials
™ Level of Integration
g
™ Integration Example
31
Level of Integration
Inductor Integration
Current Level with Frequency
100A
10A
Board Level
Integration
Package
P
k
llevell
integration
1A
Wafer level
integration
100 mA
A
100kHz
1MHz
10MHz
100MHz
32
Board Level Integration
Winding
i t
integrated
t d iin PCB
100A
[2.37a]
150 nH
nH, [2.35]
[2 35]
10A
[2.37]
Metglas, Si steel,
800 nH, [2.28]
MnZn/PI, Ur=6, 50140nH, 15m Ω, [2.21]
[2 30]
[2.30]
[2 37b]
[2.37b]
L=16uH,
L
16uH, [2.34]
50 uH, [2.24]
1A
[2.31]
[2.33]
NiZn, 25-100nH,
1-3mΩ, [2.20]
2 uH, Ur=150,
[2.22]
[2.36]
FPC, [2.29]
[2.31]
1-10uH,NiCuZn, [2.17]
3uH NiZnCu
3uH,
NiZnCu, [2.18]
[2 18]
NiFe, 4.7uH, [2.25] [2.23]
Inductor integrated
in LTCC substrate
100 mA
A
Inductor integrated
in PCB substrate
( Eberhard Waffenschmidt, …
IEEE TRANSACTIONS, 2005.)
(Michele H. Lim, … IEEE
TRANSACTIONS, 2008.)
100kHz
1MHz
* Data points are referred to “Reference II”
10MHz
100MHz
33
Board Level Integration
Organic based
100A
Lower processing
temperature
Higher processing
temperature
10A
1A
(Michele H.
H Lim,
Lim … IEEE
TRANSACTIONS, 2008.)
NiZn, 25-100nH,
1-3mΩ, [2.20]
Metglas, Si steel,
800 nH, [2.28]
50 uH, [2.24]
Ceramic based
MnZn/PI, Ur=6, 50140nH, 15m Ω, [2.21]
2 uH, Ur=150,
[2.22]
1-10uH,NiCuZn,
[2.17]
NiFe, 4.7uH,
[2.25]
FPC, [2.29]
[2.23]
DBC
carrier
3uH, NiZnCu,
3uH
NiZnCu
[2.18]
Magnetic layer
100 mA
A
Planar
i d t
inductor
Winding
Magnetic layer
( Eberhard Waffenschmidt, … IEEE TRANSACTIONS, 2005.)
100kHz
1MHz
* Data points are referred to “Reference II”
10MHz
100MHz
34
Package Level Integration
LTM4600
100A
IDC = 10 A
Ipeak = 14 A
LTM4601,
[2.40]
10A
EN5360,
[2.38]
1A
FB6831,
[2.41]
FX5545G201,
[2.42]
MIC3385, [2.43]
LM3218, [2.44]
100 mA
A
FB6831J
IDC = 0.5 A
F = 2.5 MHz
100kHz
1MHz
* Data points are referred to “Reference II”
10MHz
100MHz
35
Wafer Level Integration
-- On silicon
100A
10A
(T. O'Donnell,… APEC, 2008)
(Ah C.
(Ahn,
C H.
H ,… IEEE TRANSACTIONS,
TRANSACTIONS 1996)
1A
80-200nH, 5-8
Ω, [2.11]
100 mA
A
CoHfTaPd
NiFe, 300nH,
NiFe, 0.9uH, 1Ω [2.1] [2.3] NiFe, 0.83uH, 2.3
[2.10]
Ω , [2.9]
CoZrNb, 1uH,
Fwd conv., 350 nH, 3.9
3.1 Ω, [2.12]
Ω, 40 nH, 0.6 Ω, [2.6]
NiFe [2.2]
100kHz
1MHz
* Data points are referred to “Reference II”
10MHz
100MHz
36
Wafer Level Integration
-- In silicon
(Mingliang Wang, …
PESC, 2007)
100A
In-silicon
10A
CoZrO, 10.4 nH, 30mΩ,
[2.4]
NiFe, 130 nH, 20mΩ,
[2.15]
CoZrO2, 2.53 nH,
30mΩ, [2.13]
1A
(C. R. Sullivan,… IEEE
TRANSACTIONS, 2004)
100 mA
A
100kHz
1MHz
* Data points are referred to “Reference II”
10MHz
100MHz
37
Current Capability of Different
g
Wafer Level Integration
Magnetic fabricated in-silicon has
higher current capability than
magnetic fabricated on-silicon
100A
In-silicon
10A
CoZrO 10
CoZrO,
10.4
4 nH
nH, 30mΩ
30mΩ, [2.4]
[2 4]
On-silicon
NiFe, 130 nH, 20mΩ, [2.15]
CoZrO2, 2.53 nH,
30mΩ, [2.13]
NiFe, 300-700 nH, 0.5-10Ω, [2.5]
1A
80-200nH, 58 Ω, [2.11]
CoHfTaPd [2.3]
NiFe, 0.9uH, 1Ω [2.1]
NiFe, 0.83uH, 2.3 Ω ,
[2.9]
CoZrNb, 1uH,
3.1 Ω, [2.12]
100 mA
A
NiFe, 300nH, [2.10]
Fwd conv., 350 nH, 3.9
Ω, 40 nH, 0.6 Ω, [2.6]
NiFe [2.2]
100kHz
1MHz
* Data points are referred to “Reference II”
10MHz
100MHz
38
Presentation Outline
™ Device Technologies
™ Magnetic Materials
™ Level of Integration
g
™ Integration Example
39
3D Integrated POL
100A
Board Level
™ 3D Integrated POL
[2.37a]
150 nH
nH, [2.35]
[2 35]
10A
Metglas, Si steel,
800 nH, [2.28]
[2.37]
LTM4601,
[2.40]
MnZn/PI, Ur=6, 50140nH, 15m Ω, [2.21]
CoZrO 10
CoZrO,
10.4
4 nH
nH, 30mΩ
30mΩ, [2.4]
[2 4]
[2 30]
[2.30]
[2 37b]
[2.37b]
L=16uH,
L
16uH, [2.34]
50 uH, [2.24]
1A
[2.31]
[2.33]
80-200nH, 58 Ω, [2.11]
100 mA
A
NiZn, 25-100nH,
1-3mΩ, [2.20]
2 uH, Ur=150,
[2.22]
[2.36]
EN5360,
[2.38]
NiFe, 130 nH, 20mΩ, [2.15]
CoZrO2, 2.53 nH,
30mΩ, [2.13]
[2.31]
NiFe, 300-700 nH, 0.5-10Ω, [2.5]
FX5545G201, [2.42]
1-10uH,NiCuZn, [2.17]
3uH NiZnCu
3uH,
NiZnCu, [2.18]
[2 18]
NiFe, 4.7uH, [2.25] [2.23]
MIC3385, [2.43]
LM3218, [2.44]
CoHfTaPd [2.3]
FB6831, [2.41]
NiFe, 300nH, [2.10]
NiFe, 0.9uH, 1Ω [2.1]
NiFe, 0.83uH, 2.3 Ω ,
[2.9]
CoZrNb, 1uH,
Fwd conv., 350 nH, 3.9
3.1 Ω, [2.12]
Ω, 40 nH, 0.6 Ω, [2.6]
FPC, [2.29]
Package Level
NiFe [2.2]
Wafer Level
100kHz
1MHz
* Data points are referred to “Reference II”
10MHz
100MHz
40
Concept of 3D Integration
Driver
D
i
llayer and
d
heat spreader
Active layer and
heat sink
LTCC
Inductor layer
3D Integration
I t
ti Solution
S l ti
Benefits: Footprint saving and fully utilize space
™ Thermally-enhanced
Thermally enhanced co-packaged
co packaged solution for >15A
15A
applications that require small size and low profile
41
Advantage of DBC Active Layer
PCB
AlN DBC
Tmax = 158°C
158 C
Tavg = 96.8°C
Tmax = 94
94.1
1°C
C
Tavg = 91.0°C
Embedded
bare die
™ AlN DBC has ~6x greater thermal conductivity than 4-layer PCB
42
Active Layer Using “Flip-MOS Pair”
Metalization
(trace)
Loop inductance should be reduced
Top
MOSFET
(bare die)
Source
Drain
Source
Drain
S b t t
Substrate
Drain
Bottom
MOSFET
(bare die)
L_loop =0.82 nH !
((Maxwell Q
Q3D))
In-package decoupling Caps
™ Embedding the flipped devices allows for smallest loop
inductance and for layering of components on top and bottom
43
Passive Layer Design
• Low Temperature Co-fired Ceramics (LTCC) is used to integrate
inductor
• Made by laminating many sheets of 60-100μm thick ferrite tape
• In the middle layer,
y , silver paste
p
is used for the conductor trace
• The layers are then pressed together and sintered at 900oC
L (nH)
LTCC inductor
Commercial inductor
I (A)
Advantage of LTCC is its nonlinear inductance profile
44
Stacked Power Module
A bi t temperature=23
Ambient
t
t
23oC
Efficiiency
Vo=1.2V, 1.3MHz
PCB
Active Layer
DBC
Active Layer
DBC
Without driving loss
Io (A)
™Natural convection
– so no fan is used
™260 W/in3 power density
45
Coupled Inductors
LTCC coupled inductors
Process
A
A
I2
L2
L1
A’
I1
A’
Size Reduction
2* NonNon-coupled inductors
13
3 mm
18
8 mm
2 phase coupled inductors
28% footprint reduction
37% volume
l
reduction
d ti
18 mm
18 mm
46
Alternative Planner Inductor Structure
-- Vertical Flux vs Lateral Flux
Vs
Lateral flux
Vertical flux
900
Vertical flux
inductor
800
Lateral flux inductor
700
L (nH)
Lateral flux
inductor
600
500
400
300
200
100
Vertical flux inductor
0
35% footprint reduction
0
2
4
6
8
IDC (A)
10
12
14
16
47
Technology Roadmap
Industry
Academia
Roadblocks & Barriers
•
•
•
•
Device
Integrated magnetics
Packaging
Density
•
•
•
•
Cost
Reliability
EMI
Thermal management
48
Acknowledgement
This work was supported by International Rectifier.
Rectifier
Thanks!
49
References I
[1.1] Mingliang Wanga, Issa Batarsehb, Khai D. T. Ngoc, and Huikai Xiea, “Design and
Fabrication of Integrated Power Inductor Based on Silicon Molding Technology”, PESC
2007, pp.1612-1618.
[1.2]Toshiro Sato, Hiroshi Tomita, Atsuhito Sawabe, Tetsuo Inoue, Tetsuhiko Mizoguchi,
and Masashi Sahashi, “A Magnetic Thin Film Inductor and its Application to a MHz
Switching dc-dc Converter”, IEEE TRANSACTIONS ON MAGNETICS, VOL. 30, NO. 2,
MARCH 1994, pp.217-223.
[1.3]Weidong Li; Yuqin Sun; Sullivan, C.R “High-Frequency Resistivity of Soft Magnetic
Granular Films” IEEE TRANSACTIONS 2005
[1.4] Kelly, S.; Collins, C.; Duffy, M.; Rhen, F.M.F.; Roy, S “Core Materials for High
Frequency VRM Inductors”, PESC 2007, pp.1767 – 1772
[1.5] E. Waffenschmidt, B. Ackermann, M. Wille, “Integrated ultra thin flexible inductors for
low power converters
converters”,, 2005, pp.1528
pp.1528-1534.
1534.
50
[1.6] Eberhard Waffenschmidt, Bernd Ackermann, J. A. Ferreira, “Design Method and
Material Technologies for Passives in Printed Circuit Board Embedded Circuits, IEEE
TRANSACTIONS VOL.
TRANSACTIONS,
VOL 20,
20 NO.
NO 3,
3 MAY 2005,
2005 pp.576-584.
pp 576 584
[1.7] Jae Y. Park, Mark G. Allen “Low Temperature Fabrication and Characterization of
I
Integrated
d Packaging-Compatible,
P k i C
ibl Ferrite-Core
F i C
M
Magnetic
i Devices”
D i
” APEC 1997,
199 pp.361361
367
[1.8] Yuwen Zhao, Xiaokai Zhang, and John Q. Xiao, “Submicron Laminated Fe/SiO2 Soft
Magnetic Composites-an Effective Route to Achieve Materials for High Frequency
Applications”, Adv. Materials. 17, No.7, 915, April 4 (2005)
[1.9] Cheng, K.W.E.; Tang, C.Y.; Cheng, D.K.W.; Wu, H.; Ho, Y.L.; Lu, Y ,“Investigation of
polymer bonded magnetic materials for power conversion” Hong Kong Polytechnic
University PESC 2002,
University,
2002 pp.
pp 1254 – 1259
[1.10] S. Ohnuma, H. J. Lee, N. Kobayashi, H. Fujimori, and T. Masumoto, “Co–Zr–O
N
Nano
G
Granular
l Thin
Thi Films
Fil
with
i h Improved
I
d High
Hi h Frequency
F
S f Magnetic
Soft
M
i Properties”
P
i ” IEEE
TRANSACTIONS ON MAGNETICS, VOL. 37, NO. 4, JULY 2001, pp.2251-2254
51
[1.11] M. Ludwig; M. Duffy; T. O'Donnell; P. McCloskey; S. Mathuna, “PCB integrated
inductors for low power DC/DC converter,” IEEE Transactions on Power Electronics,
Vol 18 (4),
Vol.18
(4) July 2003,pp:937-945
2003 pp:937 945
[1.12] Y. Katayama, S. Sugahara, et al. “High-Power-Density MHz-Switcing Monolithic
DC DC Converter
DC-DC
C
t
with
ith Thin-Film
Thi Fil Inductor.”
I d t ” , Proceedings
P
di
off IEEE Applied
A li d Power
P
Electronics Conference and Exposition PESC, 2000, pp.1485-1490
[1.13] Gardner, D.; Crawford, A.M.; Shan Wang, “High frequency (GHz) and low
resistance integrated inductors using magnetic materials”, Interconnect Technology
Conference, 2001, pp.101 – 103
[1.14] T. Shimatsu, H. Komagome, I. Watanabe, H. Muraoka, Y. Sugita, and Y.
Nakamura,” Effect of a Ti seed layer on the magnetic properties of CoCrTa doublelayered perpendicular media
media”, JOURNAL OF APPLIED PHYSICS,
PHYSICS May,
May 2000,
2000 pp.6367pp 6367
6369.
[1.15]
[1
15] T.
T Osaka,M.
O k M Takai,
T k i K.
K Hayashi.
H
hi K.
K Ohashi,M.
Oh hi M Saito,
S it K.
K Yamada;
Y
d ‘A soft
ft magnetic
ti
CoNiFe film with high saturation magnetic flux density and low coercivity’, Nature 392,
796 (1998)
52
[1.16] I. Zaquine, H. Benazizi, and J. Mage, “Ferrite thin films for microwave
applications”,
app
ca o s , Jou
Journal
a o
of Applied
pp ed Physics,
ys cs, vol.
o 6
64,, no.
o 10,
0, pp
pp. 58
5822-5824,
58 , Nov.
o 1988
988
[1.17] T. Sato, M.Hasegawa, T. Mizoguchi, and M. Sahashi, “Study of high power planar
inductor”, IEEE Transactions on Magnetics,
inductor
Magnetics vol.
vol 27,
27 pp.
pp 5271-5279,
5271-5279 1991
[1.18] L. Lagorce and M. Allen, “Micromachined polymer magnets”, IEEE ninth
i t
international
ti
l Workshop
W k h
on Microelectromechanical
Mi
l t
h i l Systems,
S t
S di
Sandiego,
CA pp. 85-90,
CA,
85 90
Feb. 1996
[1.19] J. Park and M. Allen, “A comparison of micromachined inductors with different
magnetic core materials”, IEEE 46th Electronic Components and Technology
Conference, Orlando, Fl, pp. 375-381, 1996
[1.20] Yoshikawa, N.; Zhang, L.; Sugahara, M. “Experimental study of a field-effect
transistor using granular thin films”, Magnetics, IEEE Transactions, Volume 27, Issue 2,
Part 4,
4 Mar 1991 pp.3268
pp 3268 - 3271
53
References II
[2.1] Magali Brunet, Terence O’Donnell, Laurent Baud, Ningning Wang, Joe O’Brien,
Paul McCloskey, and Sean C. O’Mathuna, "Electrical performance of microtransformers
for DC
DC-DC
DC converter applications.
applications " IEEE Transactions on Magnetics,
Magnetics vol.
vol 38,
38 no.
no 5,
5 pp.
pp
3174-3176, sept. 2002.
[2.2]
[2
2] Srinivasan Iyengar,
Iyengar Trifon M.
M Liakopoulos and Chong H.
H Ahn,
Ahn “A DC/DC boost
converter toward fully on-chip integration using new micromachined planar inductors”, in
proc. Power Electronics Specialists Conference, 1999, pp. 72-76.
[2.3] Yasushi Katayama, Satoshi Sugahara, Haruo Nakazawa, Masaharu Edo, “HighPower-Density MHz-Switcing Monolithic DC-DC Converter with Thin-Film Inductor.” , in
proc. Power Electronics Specialists
p
p
Conference,, 2000,, pp
pp.1485-1490.
[2.4] Parul Dhagat, Student, Satish Prabhakaran, and Charles R. Sullivan, "Comparison
of magnetic materials for V
V-groove
groove inductors in optimized high
high-frequency
frequency DC
DC-DC
DC
converters." IEEE Transactions on Magnetics, vol. 40, no. 4, pp. 2008-2010, July 2004.
[2.5]
[2
5] T.
T O'Donnell,
O'Donnell N.
N Wang,
Wang M.
M Brunet,
Brunet S.
S Roy,
Roy A.
A Connell,
Connell J.
J Power,
Power C.
C O’Mathuna,
O’Mathuna P.
P
McCloskey, “Thin film micro-transformers for future power conversion”, Applied Power
Electronics Conference and Exposition, 2004, pp. 939-944.
54
[2.6] Masato Mino, Toshiaki Yachi, Akio Tago, Keiichi Yanagisawa, and Kazuhiko
Sakakibara, "A new planar microtransformer for use in micro-switching converters." IEEE
Transactions on Magnetics,
Magnetics vol.
vol 28,
28 no.
no 4,
4 pp.
pp 1969-1973,
1969 1973 July 1992.
1992
[2.7] Sullivan, C. R. and S. R. Sanders, "Design of microfabricated transformers and
inductors for high-frequency power conversion." IEEE Transactions on Power
Electronics, vol. 11, no. 2, pp. 228-238, mar 1996.
[2.8] Surya Musunuri, Patrick L. Chapman, Jun Zou, and Chang Liu, "Design issues for
monolithic DC-DC converters." IEEE Transactions on Power Electronics, vol. 20, no. 3,
pp. 639-649, may 2005.
[2.9] Eui-Jung Yun, Myunghee Jung, Chae Il Cheon, and Hyoung Gin Nam,
“Microfabrication and characteristics of low-power high-performance magnetic thin-film
transformers " IEEE Transactions on Magnetics,
transformers."
Magnetics vol.
vol 40,
40 no.
no 1,
1 pp.
pp 65-70,
65 70 jan 2004.
2004
[2.10] T. O'Donnell, N. Wang, R. Meere, F. Rhen, S. Roy, D. O'Sullivan, C. O'Mathuna,
“Microfabricated inductors for 20 MHz Dc-Dc converters”, Applied Power Electronics
Conference and Exposition, 2008, pp. 689-693.
55
[2.11] Ahn, C. H. and M. G. Allen (1996). "A comparison of two micromachined inductors
(bar- and meander-type) for fully integrated boost DC/DC power converters." Power
Electronics IEEE Transactions,
Electronics,
Transactions 1996,
1996 on 11(2): 239
239-245
245.
[2.12]Toshiro Sato, Hiroshi Tomita, Atsuhito Sawabe, Tetsuo Inoue, Tetsuhiko Mizoguchi,
and Masashi Sahashi,
Sahashi “A
A Magnetic Thin Film Inductor and its Application to a MHz
Switching dc-dc Converter”, IEEE Transactions on Magnetics, vol. 30, no. 2, pp.217-223,
mar 1994.
[2.13] Satish Prabhakaran, Charles R. Sullivan, and Kapil Venkatachalam, "Measured
electrical performance of V-groove inductors for microprocessor power delivery." IEEE
Transactions on Magnetics,
g
vol. 39, no. 5, pp
pp. 3190-3192, sept.
p 2003.
[2.14] Jian Lu, Hongwei Jia, Andres Arias, Xun Gong and Z. John Shen, “On-Chip
Bondwire Transformers for Power SOC Applications
Applications”, in proc.
proc Applied Power Electronics
Conference and Exposition, 2008, pp. 199-204.
[2.15]
[2
15] Mingliang Wang; Batarseh,
Batarseh I.;
I ; Ngo,
Ngo K.D.T.;
K D T ; Huikai Xie,
Xie “Design
Design and Fabrication of
Integrated Power Inductor Based on Silicon Molding Technology”, Power Electronics
Specialists Conf., 2007, pp. 1612-1618.
56
[2.16] J. M. Lopera, M. J. Prieto, A. M. Pemia M. de Graaf, W. Waanders L. Alvarez,
“Design of integrated magnetic elements using thick-film technology”, in proc. Applied
Power Electronics Conference and Exposition,
Exposition 1998,
1998 pp.
pp 407-413.
407 413
[2.17] Robert Hahn, Steffen Krumbholz, Herbert Reichl, “Low profile power inductors
b
based
d on ferromagnetic
f
i LTCC technology”,
h l
” in
i proc. Electronic
El
i Components
C
and
d
Technology Conference, 2006, pp. 528-533.
[2.18] Tsutomu Mikura, Koichi Nakahara, Kota Ikeda, Ken Furukuwa, and Katsuhiko
Onitsuka, “New substrate for micro DC-DC converter”, Electronic Components and
Technology Conference, 2006, pp. 1326-1330.
[2.19] Miguel J. Prieto, Alberto M. Pernia, Juan M. Lopera, Juan Martin, Fernando Nuiio,
“Thick-film integrated inductors for power converters”, in proc. Industry Applications
Conference 2000,
Conference,
2000 pp.
pp 3111-3118.
3111 3118
[2.20] Michele H. Lim, Jacobus. D. van Wyk, F. C. Lee, and Khai D. T. Ngo, “A Class of
C
Ceramic-Based
i B
d Chip
Chi Inductors
I d
f
for
H b id Integration
Hybrid
I
i
i Power
in
P
S
Supplies”,
li ” IEEE
Transactions on Power Electronics, vol. 23, no. 3, pp.1556-1564, may 2008.
57
[2.21] I. Kowase, T. Sato, K. Yamasawa, Y. Miura, “A planar inductor using Mn-Zn
ferrite/polyimide composite thick film for low-Voltage and large-current DC-DC
converter”, IEEE Transactions on Magnetics,
converter
Magnetics vol 41,
41 no.
no 10,
10 pp.
pp 3991-3993,
3991 3993 oct.
oct 2005.
2005
[2.22] A. M. Pernia, M. J. Prieto, J. M. Lopera, J. Reilly, S. S. Linton, C. Quinones,
“Thi k fil hybrid
“Thick-film
h b id technology
h l
f low
for
l
output voltage
l
DC/DC converter”,
” in
i proc. Industry
I d
Applications Conf., 2002, pp. 1315-1322.
[2.23] Moon, K.W.; Hong, S.H.; Kim, H.J.; Kim, J.;, “A fabrication of DC-DC converter
using LTCC NiZnCu ferrite thick films”, in proc. Int. Magnetics Conf., 2005, pp. 11091110.
[2.24] Eberhard Waffenschmidt, Bernd Ackermann, and J. A. Ferreira, “ Design method
and material technologies for passives in printed circuit Board Embedded circuits”, IEEE
Transactions on Power Electronics,
Electronics vol.
vol 20,
20 no.
no 3,
3 pp.
pp 576-584,
576 584 may 2005.
2005
[2.25] Matthias Ludwig, Maeve Duffy, Terence O’Donnell, Paul McCloskey, and Seán
Ci
Cian
Ó Mathùna,
M hù
“PCB integrated
i
d inductors
i d
f low
for
l
power DC/DC converter”,
” IEEE
Transactions on Power Electronics, vol. 18, no. 4, pp. 937-945, jul 2003.
58
[2.26] Isao Kowase, Toshiro Sato, Kiyohito Yamasawa, Member, IEEE, and Yoshimasa
Miura, "A planar inductor using Mn-Zn ferrite/polyimide composite thick film for lowVoltage
g and large-current
g
DC-DC converter." IEEE Transactions on Magnetics,
g
, vol 41,,
no. 10, pp. 3991-3993, oct. 2005.
[2.27]
[2
27] Jae Y.
Y Park,
Park Mark G.
G Allen “Low
Low Temperature Fabrication and Characterization of
Integrated Packaging-Compatible, Ferrite-Core Magnetic Devices” APEC 1997, pp.361367.
[2.28] Zhang, Y. E. and S. R. Sanders, “In-board magnetics processes”, in proc. Power
Electronics Specialists Conference, 1999, pp. 561-567.
[2.29] Tang, S. C., S. Y. R. Hui, and Henry Shu-Hung Chung, "A low-profile power
converter using printed-circuit board (PCB) power transformer with ferrite polymer
composite."
p
IEEE Transactions on Power Electronics,, vol. 16,, no. 4,, pp
pp. 493-498,, jjul.
2001.
[2.30]
[2
30] Brett A.
A Miwa,
Miwa Leo F.
F Casey,
Casey and Martin F.
F Schlecht,
Schlecht "Copper-based
Copper-based hybrid
fabrication of a 50 W, 5 MHz 40 V-5 V DC/DC converter." IEEE Transactions on Power
Electronics, vol. 6, no. 1, pp. 2-10, jan 1991.
59
[2.31] J. A. Cobos, M. Rascon, L. Alvarez, S. Ollero, M. de Graf and W. Waanders, “Low
profile and low output voltage DC/DC converters for on-board power distribution using
planar magnetics
magnetics”,, in proc. Industry Applications Conference, 1997, pp. 1153
1153-1158.
1158.
[2.32] Rengang, C., J. D. van Wyk, Shuo Wang, and Willem Gerhardus Odendaal,
"Improving
Improving the Characteristics of integrated EMI filters by embedded conductive Layers.
Layers "
IEEE Transactions on Power Electronics, vol. 20, no. 3, pp. 611-619, may 2005.
[2.33]
[2
33] A.B.
A B Lostetter,
L t tt F.
F Barlow,
B l
A Elshabini,
A.
El h bi i K.
K Olejniczak,
Ol j i
k and
d S.
S Ang,
A
“P l
“Polymer
thi k
thick
film (PTF) and flex technologies for low cost power electronics packaging”, International
Workshop on Integrated Power Packaging, IWIPP 2000, pp. 33-40.
[2.34] T. Fujiwara, "Planar integrated magnetic component with transformer and inductor
using multilayer printed wiring board", IEEE Transactions on Magnetics, vol. 34, no. 4,
pp. 2051
2051-2053,
2053, jul. 1998.
[2.35] Meinhardt, M., T. O'Donnell, Henning Schneider, John Flannery, Cian O’Mathuna,
Peter Zacharias,
Zacharias and Thomas Krieger,
Krieger “Miniaturised
Miniaturised “Low
Low Profile
Profile” module integrated
converter for photovoltaic applications with integrated magnetic components”, in proc.
Applied Power Electronics Conference, 1999, pp. 305-311.
60
[2.36] Lopera J. M. Lopera, Miguel J. Prieto, Alberto M. Pern´ıa, Fernando Nu˜no,
Martinus J. M. de Graaf, Jan Willem Waanders, and Lourdes Alvarez Barcia, "Design of
integrated magnetic elements using thick-film technology." IEEE Transactions on Power
Electronics, vol. 14, no. 3, pp. 408-414, may 1999.
[2.37] D. C. Hopkins, “Thick-film power hybridization of switchmode power circuits”, in
proc. Applied Power Electronics Conference, 1989, pp. 249-255.
[2.38] Product: Enpirion EN5360 – 6A, 1.2V at 5MHz
[2.39] Product: Micrel MIC33050 – 0.5A, 0.72 – 2.5 V at 4 MHz
[2 40] Product:
[2.40]
P d t Linear
Li
T h LTM4601 – 10A,
Tech
10A 1.5V
1 5V att 850k
[2.41] Product: Fuji – FB6831J, 2.5 MHz, 1.5V, 0.5 A
[2.42] Product: Vishay – FX5545G201 – 3W @ 2MHz, 0.3mm2, 1Amax
[2.43] Product: Micrel MIC3385 – 0.6A, > 1 V at 8 MHz
61
References III
[3.1] Maxim product: MAX1762 datasheet
[3.2] Maxim product: MAX8716 datasheet
[3.3] Maxim product: MAX1639 datasheet
[3.4] Maxim product: MAX1953 datasheet
[3 5] Maxim product: Maxim 1545 VR evaluation board
[3.5]
[3.6] Analog devices: ADP3160 VR evaluation board
[3.7] Intersil product: ISL6560 VR evaluation board
[3.8] Intersil product: ISL6327 evaluation board
[3.9] “Scalable Server Voltage Regulator Design”, IBM Symposium technology, 2004
[3 10] Renesas product: R2J20601NP DrMOS
[3.10]
[3.11] Ciclon product: CSD16410
[3.12] Z. John Shen, , David N. Okada, Fuyu Lin, Samuel Anderson, and Xu Cheng,
“L t l Power
“Lateral
P
MOSFET for
f Megahertz-Frequency,
M
h t F
Hi h D
High-Density
it DC/DC Converters“,
C
t “
IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 21, NO. 1, JANUARY 2006
[3.13] Maxim product: max8654
[3.14] Maxim product: max8566
62
[3.15] TI product: TPS54317
[3.16] TI product: TPS62290
[3.17 ] TI product: TPS6235x
[3.18 TI product: MAX8640
[3.19] Alex Q. Huang, “New Unipolar Switching Power Device Figures of Merit,” IEEE
Electron Device Lett., vol. 25, pp. 298-301, 2004.
[3.20] Yucheng Ying, “Device Selection Criteria-- Based on Loss Modeling and Figure of
Merit”, master thesis, 2008, CPES, Virginia Tech.
[3.21] Renesas MOSFET product. Part number: RJK0305, HAT2168
[3.22] Infineon MOSFET product. Part number: BSC090N03, BSC097N03
[3.23] Vishay MOSFET product. Part number: Si4390DY, SI4860DY, Si7106, Si7104
[3.24] IR MOSFET product. Part number: IRF7823PBF, IRF6633
[3.25] Greatwall MOSFET product: Part number: GWS15N15, GWS24N07
[3.26] Ciclon MOSFET product. Part number: CSD16402, CSD13301
63
References IV
[1] M. Mino, K. Tsukamoto, K.Yanagisawa,A. Tago, and T.Yachi, “A compact buckconverter using a thin-film inductor,” in Proc. IEEE Applied Power Electronics Conf.
Expo. (APEC), vol. 1, Mar. 1996, pp. 422–426. (10x6x3mm, CoZrTa thinfilm L on Si,
1.6MHz, 85%, 3.3Vo, 0.12Ao)
[2] S. Sakiyama, J. Kajiwara, M. Kinoshita, K. Satomi, K. Ohtani, and A. Matsuzawa,
“An on-chip high-efficiency and low-noise DC/DC converter using divided switches
with current control technique,” in IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig.
Tech Papers,
Tech.
Papers Feb.
Feb 1999,
1999 pp.156–157.
pp 156 157 (2Vo,
(2Vo 80mAo,
80mAo 92%,
92% 0.25umCMOS,10uH
0 25umCMOS 10uH offoff
chip)
[3] Y. Katayama, S. Sugahara, H. Nakazawa, and M. Edo, “High-power density MHzswitching
it hi
monolithic
lithi DC-DC
DC DC converter
t with
ith thin-film
thi fil inductor,”
i d t ” in
i Proc.
P
IEEE Power
P
Electronics Specialists Conf., vol. 3, June 2000, pp. 1485–1490. (1Wo, 3Vo, 3MHz,
83%, thin film CoHfTaPd L with planar coil, 10x10x1.8mm
[4] J. Kim and M. A. Horowitz, “An efficient digital sliding controller for adaptive powersupply regulation,” IEEE J. Solid-State Circuits, vol. 37, no. 5, pp. 639–647, May 2002.
(0.25umCMOS, 280mW, 2.3Vo)
64
[5] K. H. Kim, J. Kim, H. J. Kim, S. K. Han, and H. J. Kim, “A megahertz switching
DC/DC converter using
g FeBN thin film inductor,” IEEE Trans. Magn.,
g vol. 38, no. 5, pp.
3162–3164, Sep. 2002. (micromachined L, 2.7Vo, 1.8MHz, 1.5Wo, 300mAo)
[6] P. Hazucha, G. Shrom, J. Hahn, B. Bloechel, et al., “A 233-MHz 80%–87%
Efficient Four
Four-Phase
Phase DC
DC–DC
DC Converter Utilizing Air
Air-Core
Core Inductors on Package,
Package,”
IEEE J. Solid-State Circuits, vol. 40, no. 4, pp. 838–845, April 2005. (90nmCMOS,
0.9Vo, 0.3Ao, 87%pk)
[7] Product: TI – TPS62300 - 2.7W
2 7W @ 3MHz,
3MHz 2mm2,
2mm2 500mAmax
[8] Product: Maxim – MAX8640Z – 1.25W @ 4MHz, 13.4mm2, 500mAmax
[9] Product:
P d t Vishay
Vi h – FX5545G201 – 3W @ 2MHz,
2MH 0.3mm2,
03
2 1Amax
1A
[10] Product: National Semi – LM3677 – 2.16W @ 3.5MHz, 5.9mm2,m 600mA
[11] Product: ON Semi – 1.96W @ 3MHz, 4mm2, 600mA
[12] Product: Artesyn SIL40C – 40A, 1V, 300k
65
[13] Product: Astec POLA PTH series – 100W, 350k,30Amax
[14] Mikura, T.; Nakahara, K.; Ikeda, K.; Furukuwa, K.; Onitsuka, K., "New substrate
for micro DC-DC converter," Electronic Components and Technology Conference,
2006. Proceedings. 56th , vol., no., pp. 5 pp.-, 30 May-2 June 2006
[15] Product: Vishay FunctionPAK FX5545G001,15W, 600mAmax, 2MHz, 15x12mm
[16] Product: Enpirion EN5360 – 6A, 1.2V at 5MHz
[17] Product: Linear Tech LTM4601 – 10A, 1.5V at 850k
[18] Product: Renesas Dr. MOS – 25A, 1.3V at 1MHz
[19] Ball, Arthur; Lim, Michele; Gilham, David; Lee, Fred C., "System design of a 3D
integrated non-isolated Point Of Load converter," Applied Power Electronics
Conference and Exposition, 2008. APEC 2008. Twenty-Third
y
Annual IEEE , vol., no.,
pp.181-186, 24-28 Feb. 2008
[20] Product: Monolithic Power Systems, MP2106 – 1.5W, 800k, 1.5Amax
66
[21] Product: ISL8540, 2A, 1.3V, 600k
[22] Product: LT1370: A 500kHz, 6A Monolithic Boost, 2Vout
[23] Product: MPS MP2360, 2A, 3.3Vo; integrated top sw., driver, control
[24] James R. Warren, III, Kathryn Anne Rosowski, and David J. Perreault, “Transistor
Selection and Design of a VHF DC-DC Power Converter,” IEEE Transactions on
Power Electronics, Vol. 23, No. 1, January 2008, pp. 27-37. (2W resonant boost,
30MHz 7Vo)
30MHz,
[25] Juan M. Rivas, David Jackson, Olivia Leitermann, Anthony D. Sagneri, Yehui Han,
David J. Perreault, “Design Considerations for Very High Frequency dc-dc
C
Converters,”
” Power
P
El
Electronics
i Specialists
S
i li
C f
Conference,
J
June
2006 pp. 1-11.
2006,
1 11 (11.5W
(11 5W
resonant rectifier, 12Vo, 100MHz)
[ ] Robert C. N. Pilawa-Podgurski,
[26]
g
Anthonyy D. Sagneri,
g
Juan M. Rivas, David I.
Anderson, David J. Perreault, “Very High Frequency Resonant Boost Converters,”
Power Electronics Specialists Conference, June 2007, pp. 2718-2724. (integrated one
is 50MHz, 17W, 32Vo)
67
[27] Gary Hanington, P.F. Chen, V. Radisic, T. Itoh, P.M. Asbeck, “Microwave power
amplifier efficiency improvement with a 10 MHz HBTDC
HBTDC-DC
DC converter,
converter ” Microwave
Symposium Digest, On page(s): 589-592 vol.2, Jun 1998 (300mW, GaAs boost, 9Vo)
[28] Wataru Saito, Tomokazu Domon, Ichiro Omura, “Demonstration of 13.56-MHz
Class E Amplifier Using a High-Voltage
Class-E
High Voltage GaN Power-HEMT,”
Power HEMT ” IEEE Electron Device
Letters, Vol. 27, No. 5, May 2006 (1.9A, 13.4W)
[29] K. L. R. Mertens and M. S. J. Steyaert, “Fully Differential CMOS Class-E Power
Amplifier,” IEEE Journal of Solid-State Circuits, Vol. 37, No. 2, Feb. 2002 (700MHz,
1W into 50ohms, 62%, 0.35umCMOS, 2.64mm2)
[ ] V. G. Krizhanovski;; V. A. Printsovskii,, "800 MHz and 1035 MHz UHF Class E
[30]
Power Amplifiers on CLY5 MESFET," Microwave and Telecommunication Technology,
2006. CriMiCO '06. 16th International Crimean Conference , vol.1, no., pp.175-176,
Sept. 2006 (500mW, 0.063A)
[31] Frey, R., "500 W, class E 27.12 MHz amplifier using a single plastic MOSFET ,"
Microwave Symposium Digest, 1999 IEEE MTT-S International , vol.1, no., pp.359362 vol.1, 1999
68
[32] El-Hamamsy, S.-A., "Design of high-efficiency RF Class-D power amplifier,"
Power Electronics,
Electronics IEEE Transactions on , vol.9,
vol 9 no.3,
no 3 pp
pp.297
297-308
308, May 1994,
1994 300W,
300W
13.56MHz
[33] Power One ZY7120, 25W max at 1MHz based on eff. Curve
[34] Titus, J.L.; Gehlhausen, M.A.; Desko, J.C., Jr.; Nguyen, T.T.; Shibib, M.A.;
Hollenbach, K.E.; Roberts, D.J., "Characterization of a fully resonant, 1-MHz, 25-Watt,
DC/DC converter fabricated in a rad-hard BiCMOS/high-voltage process," Nuclear
Science, IEEE Transactions on , vol.42, no.6, pp.2143-2148, Dec 1995, AT&T Bell
Labs
[35] Hanington, G.; Pin-Fan Chen; Asbeck, P.M.; Larson, L.E., "High-efficiency power
amplifier
p
using
g dynamic
y
power-supply
p
pp y voltage
g for CDMA applications,"
pp
, Microwave
Theory and Techniques, IEEE Transactions on , vol.47, no.8, pp.1471-1476, Aug 1999
(500mW, 10MHz, 3.5Vo ?)
[36] Casey,
Casey L.F.;
L F ; Schlecht,
Schlecht M.F.,
M F "A
A high
high-frequency
frequency, low volume,
volume point
point-of-load
of load power
supply for distributed power systems," Power Electronics, IEEE Transactions on ,
vol.3, no.1, pp.72-82, Jan 1988, 42V, 3.6MHz, 50W
69
[37] Hanington, G.; Metzger, A.; Asbeck, P.; Finlay, H., "Integrated DC-DC converter
using GaAs HBT technology,
technology " Electronics Letters , vol.35,
vol 35 no.24,
no 24 pp.2110
pp 2110-2112
2112, 25
Nov 1999 (1.5W, 10MHz, 3.5Vo)
[38] Tabisz, W.A.; Lee, F.C.Y., "Zero-voltage-switching multi-resonant technique-a
novel approach to improve performance of high-frequency
high frequency quasi-resonant
quasi resonant
converters," Power Electronics, IEEE Transactions on, vol.4, no.4, pp.450-458, Oct
1989, 5W, 13MHz, 3.3Vo
[39] Hannon J., O’ Sullivan D., McCarthy K.G., Egan M.G., “Design and Optimization
of a High Current High Frequency Monolithic Buck Converter”, IEEE APEC 2008,
20MHz, 2A max, 600mA tested, 70% eff., 3.3V-1.2V
[40] Product: Delta Delphia IPM04S0A0S10FA, 40W max, 10A max, 400kHz, 18x16
[41] Product: Lineage Power PicoTLynx, 30W max, 6A max, 600kHz, 12.2x12.2mm
[42] Product: National Semiconductor LM3218, 650mA, 2MHz, 3x2.5x1.2mm, 2.2W
70