MI2050C, MI2060C Dual Common Cathode Schottky Rectifier

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MI2050C, MI2060C

Vishay General Semiconductor

K

Dual Common Cathode Schottky Rectifier

TO-262AA

PIN 1

PIN 3

MI20xxC

PIN 2

CASE

1

2

3

PRIMARY CHARACTERISTICS

I

F(AV)

V

RRM

I

FSM

V

F

at I

F

= 10 A

T

J max.

Package

Diode variations

2 x 10 A

50 V, 60 V

150 A

0.570 V

150 °C

TO-262AA

Common cathode

FEATURES

• Power pack

• Guardring for overvoltage protection

• Lower power losses, high efficiency

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, OR-ing diodes,

DC/DC converters, or polarity protection application.

MECHANICAL DATA

Case: TO-262AA

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS

(T

A

= 25 °C unless otherwise noted)

PARAMETER SYMBOL

V

RRM

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig.1)

Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode

Peak repetitive reverse current per leg at t p

= 2 μs, 1 kHz per diode

Voltage rate of change (rated V

R

)

Operating junction temperature range

Storage temperature range total device per diode

I

F(AV)

I

FSM

I

RRM dV/dt

T

J

T

STG

MI2050C

50

20

10

150

0.5

10 000

- 65 to +150

- 65 to +175

MI2060C

60

UNIT

V

A

A

A

V/μs

°C

°C

Revision: 13-Aug-13 1 Document Number: 89007

For technical questions within your region: DiodesAmericas@vishay.com

, DiodesAsia@vishay.com

, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.com

MI2050C, MI2060C

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS

(T

A

= 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS

Maximum instantaneous forward voltage

 per diode

Reverse current per diode

V

F

(1)

I

R

(2)

I

F

= 5 A

I

F

= 10 A

I

F

= 5 A

I

F

= 10 A rated V

R

T

J

= 25 °C

T

J

= 125 °C

T

J

= 25 °C

T

J

= 125 °C

T

J

= 25 °C

T

J

= 100 °C

Typical junction capacitance C

J

4.0 V, 1 MHz

Notes

(1)

(2)

Pulse test: 300 μs pulse width, 1 % duty cycle

Pulse test: Pulse width

40 ms

TYP.

0.554

0.649

0.484

0.570

15

10.8

300

MAX.

-

0.74

-

0.62

150

25

-

UNIT

V

μA mA pF

THERMAL CHARACTERISTICS

(T

A

= 25 °C unless otherwise noted)

PARAMETER SYMBOL MI2050C

Typical thermal resistance per diode R 

JC

2.0

MI2060C UNIT

°C/W

ORDERING INFORMATION

(Example)

PACKAGE PREFERRED P/N UNIT WEIGHT (g)

TO-262AA MI2060C-E3/4W 1.456

RATINGS AND CHARACTERISTICS CURVES

(T

A

= 25 °C unless otherwise noted)

PACKAGE CODE

4W

BASE QUANTITY

50/tube

DELIVERY MODE

Tube

20

16

12

8

4

Resistive or Inductive Load

0

0 50 100

Case Temperature (°C)

Fig. 1 - Forward Current Derating Curve

150

160

140

120

100

80

T

J

= T

J

Max.

8.3 ms Single Half Sine-Wave

60

40

1 10

N umber of Cycles at 60 Hz

100

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge pCurrent

Per Diode

Revision: 13-Aug-13 2 Document Number: 89007

For technical questions within your region: DiodesAmericas@vishay.com

, DiodesAsia@vishay.com

, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.com

MI2050C, MI2060C

Vishay General Semiconductor

100

10

T

J

= 150 °C

T

J

= 125 °C

T

J

= 25 °C

1

10 000

1000

T

J

= 25 °C f = 1.0 MHz

V sig

= 50 mV p-p

0.1

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

Instantaneous Forward Voltage (V)

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

100

0.1

1 10

Reverse Voltage (V)

100

Fig. 5 - Typical Junction Capacitance Per Diode

100

10

T

J

= 150 °C

T

J

= 125 °C

1

0.1

0.01

T

J

= 25 °C

0.001

10 20 30 40 50 60 70 80 90 100

Percent of Rated Peak Reverse Voltage (%)

Fig. 4 - Typical Reverse Characteristics Per Diode

PACKAGE OUTLINE DIMENSIONS

in inches (millimeters)

TO-262AA

0.411 (10.45) MAX.

30° (TYP.)

(REF.)

0.250 (6.35) MI N .

0.055 (1.40)

0.047 (1.19)

K

100

10

1

0.1

0.01

0.1

1 t - Pulse Duration (s)

10 100

Fig. 6 - Typical Transient Thermal Impedance Per Diode

0.185 (4.70)

0.175 (4.44)

0.055 (1.40)

0.045 (1.14)

0.950 (24.13)

0.920 (23.37)

0.160 (4.06)

0.140 (3.56)

0.057 (1.45)

0.045 (1.14)

1

PI N

2 3

0.510 (12.95)

0.470 (11.94)

PI N 1

PI N 3

0.350 (8.89)

0.330 (8.38)

PI N 2

HEATSI N K

0.560 (14.22)

0.530 (13.46)

0.401 (10.19)

0.381 (9.68)

0.110 (2.79)

0.100 (2.54)

0.104 (2.65)

0.096 (2.45)

0.035 (0.90)

0.028 (0.70)

0.205 (5.20)

0.195 (4.95)

0.022 (0.56)

0.014 (0.35)

Revision: 13-Aug-13 3 Document Number: 89007

For technical questions within your region: DiodesAmericas@vishay.com

, DiodesAsia@vishay.com

, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.com

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Revision: 13-Jun-16 1 Document Number: 91000

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