Cost-Effective Fully Tested Die with High-Frequency
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Cost-Effective Fully Tested Die with High-Frequency and High-Throughput Wafer-Test Solution 2004年6月29日 Southwest Test Workshop 2004 Masahide Ozawa Elpida Memory, Inc. Nobuhiro Kawamata FormFactor Inc., Asia Southwest Test Workshop 2004 Presentation Outline • Mobile RAM introduction • Mobile RAM wafer-level-final-sort tests objectives and goals • High performance probing technology solution • New probing technology internal qualification • Customer qualification • Follow on work • Summary and conclusion p. 2 2004年6月29日 Southwest Test Workshop 2004 Elpida / FFI Elpida DRAM Plant 300mm Fabrication in Japan p. 3 2004年6月29日 Southwest Test Workshop 2004 Elpida / FFI Mobile RAM Introduction Lowest IDD6, Low Voltage (1.8V), and JEDEC Mobile Functions SDRAM Function Low Power SDRAM Mobile RAM Regular SDRAM based Low Power Deep Power Down al s ion tion t i c d Ad Fun e bil o M PASR* Control min memory size For refresh TCSR* Control Self Refresh by Temperature Driver Strength Self Refresh Current p. ex) 128Mb Density I/O Driver Control 1.8V 3.3V Standard 2.9V, 3.3V Low Power Low Power Read / Write Read / Write Read / Write Synchronous Synchronous Synchronous 2.0mA 0.6mA 0.25mA * Low Power Mode PASR: Partial Array Self Refresh TCSR: Temperature Compensated Self Refresh 4 2004年6月29日 Southwest Test Workshop 2004 Elpida / FFI Required Density in Cellular Phone (Mbit/unit) 600 500 400 300 Base Band AVG 200 Application AVG 100 0 (Source : Elpida) 1H 2H 2003 1H 2H 2004 1H 2H 2005 1H 2H 2006 Application memory is higher than Baseband memory. p. 5 2004年6月29日 Southwest Test Workshop 2004 Elpida / FFI Bandwidth (Speed) for Cellular Phone (MByte/sec) 800 600 DDR X32 I/O DDR x16 I/O 400 SDR x16 I/O MB/sec 200 (Source : Elpida) 0 1H 2H 2003 1H 2H 2004 1H 2H 2005 1H 2H 2006 Due to advanced application, required bandwith is rapidly growing. p. 6 2004年6月29日 Southwest Test Workshop 2004 Elpida / FFI Japanese 3G Market Penetration Plan and SIP demand projection (K Users) 3000 HTML Mail Receiving File Size Increasing 2500 Real Time OS 2000 Actual ng la un ch i SI P is 1000 MCP Demand Increase due to Space limitation re al ly 1500 500 Japanese 3G Users Japanese 3G with SIP p. Year 2003 7 2004年6月29日 Southwest Test Workshop 2004 ar M Fe b Ja n D ec N ov ct O p Se g Au Ju ly Ju ne ay M Ap ril 0 Year 2004 (Source： Elpida) Elpida / FFI Mobile Memory TAM Trend Memory TAM for Mobile Phone SDRAM PSRAM SRAM 2003 2004 2005 2006 2007 Mobile SDRAM TAM 1G SD 512M SD 256M SD 128M SD 64M SD 32M SD p. 2003 8 2004年6月29日 2004 2005 2006 Southwest Test Workshop 2004 2007 Elpida / FFI Advanced Mobile RAM KGD Flow • Conventional Wafer Sale Flow Prelaser Tests CP-1 Mid Speed High Temp CP-1 Mid Speed Ambient Redunduncy L/R Due to Probe Card Post Laser Test Limitation Tested Wafer Sale CP-2 Mid Speed High Temp • Elpida Mobile RAM Wafer Sale Flow (Under Evaluation) Prelaser Tests Wafer BI Low Speed 128// BI Temp p. CP-1 Mid Speed 128// High Temp Wafer Level Final Tests Redunduncy CP-1 Mid Speed 128// Ambient L/R CP-2 High Speed 128// High Temp CP-2 High Speed 128// Low Temp Mobile RAM Wafer Sale Wafer Level BI Test High Speed and High Throughput Wafer Level Final Tests High, Ambient, Cold Test Temperature Tests 9 2004年6月29日 Southwest Test Workshop 2004 Elpida / FFI Wafer-Level Final-Sort-at-Probe Objectives • On-spec Mobile RAM testing – – – Low-voltage High-frequency Wide temperature • Low TCOO High Performance Probing Solution p. 10 High performance probing solution enables “Value-Added Mobile RAM Wafer-Sale Business” 2004年6月29日 Southwest Test Workshop 2004 Elpida / FFI High Performance Probing Solution FFI S200TM probing technology TRETM probing technology HFTAPTM probing technology 128 Multi DUT testing, 66MHz p. 500MHz, High signal integrity 200MHz High signal integrity 128 Multi DUT 11 2004年6月29日 Southwest Test Workshop 2004 Elpida / FFI FFI Internal Qualification Signal Integrity: Cross-talk simulation* S ta nda rd_Vout_with_xta lk_pha s e 18 S 200_Vout_with_xta lk_pha s e 180 S200 probing technology FFI TRE probing technology (V) 3V 3 2 1 0V 0 -1 0 2 4 6 8 10 12 14 16 18 20 Time (ns) time, ns ec p. *180°out-of-phase cross-talk effects super-imposed 12 2004年6月29日 Southwest Test Workshop 2004 Elpida / FFI FFI Internal Qualification Signal Integrity: cross-talk simulation Fa r_e nd_Cros s _Ta lk1 Fa r_e nd_Cros s _Ta lk 0 FFI TRE S200 -10 -20 m6 -30 -40 m6 freq=200.0MHz Far_end_Cross_Talk=-27.557 -50 0 FFI TRE S200 -10 -20 m4 -30 -40 m4 freq=200.0MHz Near_end_Cross_Talk=-29.501 -50 -60 -60 0 50 100 150 200 250 300 350 400 450 500 0 13 50 100 150 200 250 300 350 400 450 500 freq, MHz freq, MHz p. Near End Cross-talk (dB) Ne a r_e nd_Cros s _Ta lk2 Ne a r_e nd_Cros s _Ta lk Far End Cross-talk (dB) V 1 V1: Measured Power in volts NEXT (dB) = 20 log 10 V2: Reference Power in volts V 2 0.1 0.032 − 20dB = 20 log 10 ∴10% , − 30dB = 20 log 10 ∴ 3.2% 1 1 2004年6月29日 Southwest Test Workshop 2004 Elpida / FFI FFI Internal Qualification Signal Integrity: Tr/Tf Measurement $C_U43_A04_V..CHANNEL2 U43_A04_V..CHANNEL2 0.4 (V) FFI TRE probing technology 0.3 m4 m2 m1 0.2 m3 S200 probing technology 0.1 52 54 56 58 Time time, (ns) nsec FFI TRE Probing Technology t m3-m4 = 0.45ns p. S200 Probing Technology t m1-m2 = 0.35ns 14 2004年6月29日 Southwest Test Workshop 2004 Elpida / FFI S200 Internal Qualification Results Internal Qualification -1 dB Bandwidth Attenuation -3 dB Bandwidth Rise/Fall Time 20%-80% Tr/Tfl Skew Channel to Channel Temperature Operation Range Driver Sharing Level Parallelism // per Station p. S200 Results 225MHz 850MHz 350 pS +/- 70 pS -40 to 125℃ x2 128// 15 2004年6月29日 Southwest Test Workshop 2004 Elpida / FFI Wafer-Level Final-Sort Test Customer Qualification • 143MHz tester + 100MHz Mobile RAM – Output pin waveform – DQ signal skew – Input and output voltage margins – Vcc margin – Timing margin – Wafer-to-wafer high-speed binning correlation p. 16 2004年6月29日 Southwest Test Workshop 2004 Elpida / FFI Customer qualification: DUT to DUT Skew 30 FFI TRE Probing Technology 25 Frequency S200 Probing Technology 20 S200 15 TRE 10 5 0 0 p. 25 50 75 100 125 150 175 200 225 DUT to DUT Signal Skew [ps] 17 2004年6月29日 Southwest Test Workshop 2004 Elpida / FFI Customer qualification: VIH/VIL Margin Shmoo S200 Probing Technology Vcc (V) 2.5 FFI TRE Probing Technology 1.8 S200 Probing Technology 0 1.0 p. 1.2 1.4 1.6 1.8 VIH(V) 0 0.2 0.4 0.6 0.8 VIL(V) 18 2004年6月29日 Southwest Test Workshop 2004 Elpida / FFI Customer qualification: tHOLD-Control / tHOLD-Address Margin Shmoo Vcc (V) S200 Probing Technology S200 Probing Technology 2.5 1.8 FFI TRE Probing Technology 0 p. 100 200 300 400 (ps) FFI TRE Probing Technology 0 100 tHOLD-Control 19 2004年6月29日 Southwest Test Workshop 2004 200 400 600 800 (ps) tHOLD-Address Elpida / FFI Customer Qualification: DQ SMHOO Plot 2000 S200 Probing Technology: 0.6ns VOH (mV) 90% S200 FFI TRE TRE Probing Technology: 1.6ns 10% 0 0 4 Time (ns) p. 20 2004年6月29日 Southwest Test Workshop 2004 Elpida / FFI Summary and Conclusion Objectives Results High-frequency testing 100MHz beta evaluation Low TCOO 128 parallel per station 1.5x throughput compared with non-TRE probing 1.1x throughput p. Wide temperature compared with low-frequency testing Low-to-high temperature testing throughout the test process On-spec testing To be applied to133MHz Mobile RAM at device speed testing 21 2004年6月29日 Southwest Test Workshop 2004 Elpida / FFI Follow-on Work • Elpida Memory Inc. – – 100MHz Mobile RAM production using S200 Evaluation of 133MHz Mobile RAM at-device-speed testing with S200 • FormFactor, Inc. – – p. Customer qualification for 133MHz and beyond Beta site evaluation of multi-bit FLASH memory 100MHz and beyond 22 2004年6月29日 Southwest Test Workshop 2004 Elpida / FFI Project Members • Elpida – Masahide Ozawa – Yozo Saiki – Koji Mine – Katsuji Hoshi – Yosuke Kawamata – Hajime Sasamoto – Satoshi Gomi – Tomoharu Yamaguchi p. 23 • FormFactor – Norishige Kawashimo – Mark Brandemuhel – Chuck Miller – Jim Tseng – Ken Matsubayashi – Nobuhiro Kawamata The names of the companies and products described in this document are the trademarks or registered trademarks of each company. 2004年6月29日 Southwest Test Workshop 2004 Elpida / FFI
