HMC1131LC4
v00.0215
AMPLIFIERS - LINEAR & POWER - SMT
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 24 - 35 GHz
Typical Applications
Features
The HMC1131LC4 is ideal for:
High Saturated Output Power: 25 dBm @ 16% PAE
• Point-to-Point Radios
High Output IP3: 35 dBm
• Point-to-Multi-Point Radios
High Gain: 22 dB
• VSAT & SATCOM
High P1dB Output Power: 24 dBm
DC Supply: +5V @ 225 mA
Compact 24 Lead 4x4 mm SMT Package: 16 mm2
Functional Diagram
General Description
The HMC1131LC4 is a GaAs pHEMT MMIC
driver
amplifier
which
operates
between
24 and 35 GHz. The amplifier provides 22 dB of gain,
+35 dBm Output IP3, and +24 dBm of output power
at 1 dB gain compression, while requiring 225 mA
from a +5V supply. The HMC1131LC4 is capable of
supplying +25 dBm of saturated output power with
16% PAE and is housed in a compact leadless
4x4 mm ceramic surface mount package. The
HMC1131LC4 is an ideal driver amplifier for a wide
range of applications including point-to-point radio
from 24 to 35 GHz.
Electrical Specifications
TA = +25° C, Vdd1 = Vdd2 = Vdd3 = Vdd4 = +5V, Idd = +225 mA [1]
Parameter
Min
Frequency Range
Gain
Typ.
Max
Min
24 - 27
22
Units
GHz
22
dB
0.022
dB/°C
Input Return Loss
8
8
dB
Output Return Loss
7
7
dB
24
24
dBm
Saturated Output Power (Psat)
27
25
dBm
Output Third Order Intercept (IP3) [2]
34
35
dBm
Supply Current (Idd)
225
225
mA
Output Power for 1 dB Compression (P1dB)
22
20
Max
0.031
Gain Variation over temperature
24
Typ.
27 - 35
[1] Adjust Vgg1 and Vgg2 between -2 to 0V to achieve Idd = 225mA typical
[2] Measurement taken at Pout / tone = +10dBm
1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1131LC4
v00.0215
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 24 - 35 GHz
Broadband Gain & Return Loss
Gain vs. Temperature
30
28
20
RESPONSE (dB)
26
10
GAIN (dB)
24
0
-10
22
20
18
16
-20
14
-30
12
23
25
27
29
31
33
35
24
37
25
26
27
28
S21
S11
S22
31
32
33
34
35
36
0
-5
-5
-10
-15
-20
-25
+85 C
-40 C
Output Return Loss vs. Temperature
0
RETURN LOSS (dB)
RETURN LOSS (dB)
30
+25 C
Input Return Loss vs. Temperature
-30
-10
-15
-20
-25
-30
-35
-35
24
25
26
27
28
29
30
31
32
33
34
35
36
24
25
26
27
FREQUENCY (GHz)
+25 C
28
29
30
31
32
33
34
35
36
FREQUENCY (GHz)
+85 C
-40 C
P1dB vs. Temperature
+25 C
+85 C
-40 C
P1dB vs. Supply Voltage
30
30
28
28
26
26
24
24
P1dB (dBm)
P1dB (dBm)
29
FREQUENCY (GHz)
FREQUENCY (GHz)
AMPLIFIERS - LINEAR & POWER - SMT
30
22
20
22
20
18
18
16
16
14
14
12
12
24
25
26
27
28
29
30
31
32
33
34
35
FREQUENCY (GHz)
+25 C
+85 C
36
24
25
26
27
28
29
30
31
32
33
34
35
36
FREQUENCY (GHz)
-40 C
4V
5V
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
2
HMC1131LC4
v00.0215
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 24 - 35 GHz
30
28
28
26
26
24
24
Psat (dBm)
Psat (dBm)
Psat vs. Supply Voltage
30
22
20
22
20
18
18
16
16
14
14
12
12
24
25
26
27
28
29
30
31
32
33
34
35
36
24
25
26
27
FREQUENCY (GHz)
+25 C
+85 C
-40 C
29
30
31
32
33
4V
34
35
36
34
35
36
5V
Psat vs. Supply Current
30
28
28
26
26
24
24
Psat (dBm)
30
22
20
22
20
18
18
16
16
14
14
12
12
24
25
26
27
28
29
30
31
32
33
34
35
24
36
25
26
27
175 mA
200 mA
28
29
30
31
32
33
FREQUENCY (GHz)
FREQUENCY (GHz)
225 mA
250 mA
175 mA
200 mA
Output IP3 vs. Temperature [1]
225 mA
250 mA
Output IP3 vs. Supply Current [1]
40
40
38
38
36
36
34
34
IP3 (dBm)
IP3 (dBm)
28
FREQUENCY (GHz)
P1dB vs. Supply Current
P1dB (dBm)
AMPLIFIERS - LINEAR & POWER - SMT
Psat vs. Temperature
32
30
28
32
30
28
26
26
24
24
22
22
20
20
24
25
26
27
28
29
30
31
32
33
34
35
FREQUENCY (GHz)
+25 C
+85 C
36
24
25
26
27
28
29
30
31
32
33
34
35
36
FREQUENCY (GHz)
-40 C
175 mA
200 mA
225 mA
250 mA
[1] Pout/Tone = +10 dBm
3
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1131LC4
v00.0215
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 24 - 35 GHz
Output IP3 vs. Supply Voltage [1]
Output IM3 @ Vdd = +4V
40
70
36
60
IM3 (dBc)
IP3 (dBm)
34
32
30
28
50
40
26
24
30
22
20
20
24
25
26
27
28
29
30
31
32
33
34
35
36
4
6
8
FREQUENCY (GHz)
4V
12
14
28 GHz
30 GHz
5V
Output IM3 @ Vdd = +5V
16
32 GHz
34 GHz
Power Compression @ 30.5 GHz
30
400
60
25
370
20
340
15
310
10
280
5
250
Pout(dBm), GAIN(dB), PAE(%)
70
50
40
30
20
220
0
4
6
8
10
12
14
16
-15 -13 -11
-9
Pout/TONE (dBm)
28 GHz
30 GHz
Idd (mA)
IM3 (dBc)
10
Pout/TONE (dBm)
-7
-5
-3
-1
1
3
5
7
9
INPUT POWER (dBm)
32 GHz
34 GHz
Pout
Gain
PAE
AMPLIFIERS - LINEAR & POWER - SMT
38
Idd
Gain & Power vs. Supply Current
@ 30.5 GHz
Gain & Power vs. Supply Voltage
@ 30.5 GHz
27
Gain (dB), P1dB (dBm), Psat (dBm)
Gain (dB), P1dB (dBm), Psat (dBm)
27
26
25
24
23
22
21
20
26
25
24
23
22
21
20
19
19
175
200
225
250
4
4.2
4.4
Idd (mA)
GAIN
P1dB
4.6
4.8
5
Vdd (V)
Psat
GAIN
P1dB
Psat
[1] Pout/Tone = +10 dBm
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
4
HMC1131LC4
v00.0215
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 24 - 35 GHz
Reverse Isolation vs. Temperature
Power Dissipation @ 85C
2
POWER DISSIPATION (W)
ISOLATION (dB)
-10
-20
-30
-40
-50
1.8
1.6
1.4
1.2
1
0.8
0.6
-12
-60
24
25
26
27
28
29
30
31
32
33
34
35
36
-9
-6
+25 C
-3
0
3
6
9
INPUT POWER (dBm)
FREQUENCY (GHz)
+85 C
-40 C
Input IP3 vs Idd over Pout/tone
@ 30 GHz [1]
27 GHz
28 GHz
30 GHz
32 GHz
33 GHz
34 GHz
Output IP3 vs Idd over Pout/tone
@ 30 GHz [1]
25
40
35
20
30
IP3 (dBm)
IP3 (dBm)
AMPLIFIERS - LINEAR & POWER - SMT
0
15
10
25
20
15
10
5
5
0
170 175 180 185 190 195 200 205 210 215 220 225
0
170 175 180 185 190 195 200 205 210 215 220 225
Idd (mA)
Idd (mA)
14 dBm
12 dBm
10 dBm
14 dBm
12 dBm
10 dBm
Gain vs Idd over Pout/tone = 14 dBm
@ 30 GHz [1]
25
GAIN (dB)
20
15
10
5
0
170 175 180 185 190 195 200 205 210 215 220 225
Idd (mA)
[1] Vdd = 5V, Idd2 fixed =170mA, Idd1 varied 0 to 50 mA
5
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1131LC4
v00.0215
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 24 - 35 GHz
Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd)
5.5V
Vdd (V)
Idd (mA)
RF Input Power (RFIN)
+12 dBm
+4
225
Channel Temperature
175 °C
+5
225
Continuous Pdiss (T=85 °C)
(derate 22mW/°C
1.97W
Thermal Resistance (RTH)
(junction to ground paddle)
45.5°C/W
Operating Temperature
-40 °C to +85 °C
Storage Temperature
-65 °C to 150 °C
ESD Sensitivity (HBM)
Class 0, Passed 150V
Adjust Vgg1 to achieve Idd = 225 mA
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
AMPLIFIERS - LINEAR & POWER - SMT
Absolute Maximum Ratings
Package Information
Part Number
Package Body Material
Lead Finish
HMC1131LC4
Alumina White
Gold over Nickel
MSL Rating [2]
MSL3
[2]
Package Marking [1]
H1131
XXXX
[1] 4-Digit lot number XXXX
[2] Max peak reflow temperature of 260 °C
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
6
HMC1131LC4
v00.0215
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 24 - 35 GHz
Pin Descriptions
AMPLIFIERS - LINEAR & POWER - SMT
Pin Number
7
Function
Description
1, 5, 6, 7, 9, 10, 12,
13, 14, 18, 19, 24
N/C
These pins are not connected internally, however all
data shown herein was measured with these pins
connected to RF/DC ground externally.
3
RF IN
This pin is DC coupled and matched to 50 Ohms.
2, 4, 15, 17
GND
These pins and package bottom must be connected
to RF/DC ground.
8, 11
Vgg1, Vgg2
Gate control for amplifier. External bypass capacitors
of 100 pF, 10 nF and 4.7 uF are required.
16
RF OUT
This pin is DC coupled and matched to 50 Ohms.
20, 21, 22, 23
Vdd1, Vdd2,
Vdd3, Vdd4
Drain bias voltage for amplifier. External bypass
capacitors of 100 pF, 10 nF and 4.7 uF are required.
Pin Schematic
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1131LC4
v00.0215
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 24 - 35 GHz
AMPLIFIERS - LINEAR & POWER - SMT
Application Circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8
HMC1131LC4
v00.0215
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 24 - 35 GHz
AMPLIFIERS - LINEAR & POWER - SMT
Evaluation PCB
THRU CAL
VD2
TP1
VD3
TP2
TP3
+
C16
C18
C11
C3
C1
C2
C4
C15
C10
C17
+
C9
+
C8
+
VD4
TP4
VD1
U1
C12
C6
C7
C5
C13
C20
TP5
VG2
C14
600-00145-00-1
RFIN
+
+
RFOUT
+
C21
C19
TP6 TP7
VCTRL
VG1
List of Materials for Evaluation PCB EV1HMC1131LC4
Item
Description
J1, J2
PCB Mount K Connectors
TP1 - TP7
DC Pin
C1 - C6
100 pF Capacitor, 0402 Pkg.
C8 - C13
10000 pF Capacitor, 0402 Pkg
C15 - C20
2.2 uF Capacitor, 0402 Pkg.
U1
HMC1131LC4
PCB [2]
600-00145-00 Evaluation Board
[1]
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation circuit board shown is available from ADI
upon request.
[1] Reference this number when ordering Complete Evaluation PCB
[2] Circuit Board Material: Rogers 4350 or Arlon 25FR
9
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1131LC4
v00.0215
GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 24 - 35 GHz
AMPLIFIERS - LINEAR & POWER - SMT
Notes:
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
10