SiC POWER MODULES Innovative Power Devices for a Sustainable Future Traction, industrial equipment, building facilities, electric vehicles, renewable energies, home appliances... Power devices are a key component in power electronics products for contributing to the realization of a low-carbon society. Attracting attention as the most energy-efficient power device is one made using new material, silicon-carbide (SiC). The material characteristics of SiC have led to a dramatic reduction in power loss and significant energy savings for power electronics devices. Mitsubishi Electric began the development of elemental SiC technologies in the early 1990s and has since introduced them to achieve practical energy-saving effects for products manufactured using SiC. Innovative SiC power modules are contributing to the realization of a low-carbon society and more affluent lifestyles. SiC: Silicon Carbide-Compound that fuses silicon and carbon at a ratio of one-to-one. Traction • Size and weight of traction inverters reduced • Regenerative performance enhanced • Noise reduced Home appliances • Energy savings increased • Cooling system more compact • Equipment more compact/thinner Industrial equipment • High torque, high speed, size reduced • Cooling system more compact • Manufacturing productivity enhanced Merits of Incorporating SiC Power Modules Electric/hybrid vehicles • Power loss reduced • Cooling system more compact • Regenerative power used efficiently Renewable energies • Energy conversion efficiency improved • Passive components downsized • Quieter high-speed operation Building facilities • Power loss reduced • Greater layout freedom as the result of smaller equipment 1 SiC with superior characteristics Si SiC Gate Gate Source Source n+ p n+ n- Power loss reduced Source p p Source n+ n+ n- p SiC substrate Drain electrode SiC MOSFET structure 1 10 Current flow Si substrate SiC has approximately 10 times the critical breakdown strength of silicon. Furthermore, the drift layer that is a main cause of electrical resistance is one-tenth of the thickness. This allows a large reduction in electrical resistance and, in turn, reduces power loss. This SiC characteristic enables dramatic reductions in conductivity loss and switching loss in power devices. Large reduction in electrical resistance Drain electrode Si MOSFET structure High-temperature operation SiC Conduction band High temperature Band gap Band gap is approx. 3 times that of Si When the temperature increases, electrons are exited to the conduction band and the leakage current increases. At times, this results in abnormal operation. However, SiC has three times the band gap width of silicon, preventing the flow of leakage current and enabling operation at high temperatures. Valence band High-speed switching operation Hybrid SiC power modules Si SiC Turn-on switching waveform High-speed switching operations realized Ic:500A/div With SiC, owing to the high dielectric breakdown, power loss is reduced and high-voltage is easier to achieve, it is possible to use Schottky Barrier Diodes (SBDs), which cannot be used with Si. SBDs can realize high-speed switching motion because they don't have accumulation carriers. As a result, high-speed switching can be realized. Vce:250V/div t:1µs/div Heat dissipation Si SiC SiC has three times the heat conductivity of silicon, which improves heat dissipation. Thermal conductivity rate is approx. 3 times that of Si SiC power modules appropriated by application Application Product name Hybrid SiC-IPM Full SiC-IPM Full SiC Power Modules Industrial equipment Traction Home appliances Hybrid SiC Power Modules for High-frequency Switching Applications Large Hybrid SiC DIPIPMTM for PV Application Hybrid SiC Power Modules Hybrid SiC DIPPFCTM Full SiC DIPPFCTM Model PMH200CS1D060 PMH75-120-Sxxx* PMF75-120-Sxxx* FMF400BX-24A FMF800DX-24A CMH100DY-24NFH CMH150DY-24NFH CMH200DU-24NFH CMH300DU-24NFH CMH400DU-24NFH CMH600DU-24NFH PSH50YA2A6 CMH1200DC-34S PSH20L91A6-A PSF20L91A6-A Rating Voltages[V] Current[A] Connection States Insert pages 600 200 6-in-1 1200 75 6-in-1 1200 1200 4-in-1 2-in-1 2-in-1 Sample available 600 1700 400 800 100 150 200 300 400 600 50 1200 Commercially available Sample available Sample available Sample available Sample available 600 20Arms 1200 Commercially Commercially Commercially Interleaved Commercially 4-in-1 2-in-1 available available available available P3 P4 P5 P6 P7 *Tentative No. 2 600V/200A Hybrid SiC-IPM for Industrial Equipment PMH200CS1D060 New SiC-SBD incorporated in an IPM with a built-in drive circuit and protection functions Power loss reduction of approx. 20% contributes to enhancing the performance of industrial machinery Features • Hybrid combination of SiC-SBD and IGBT with current and temperature sensors implemented for IPM supplies high functionality and low loss enabling high torque and motor speed • Recovery loss (Err) reduced by 95% compared to the conventional product* • Package compatible with the conventional product* making replacement possible * Conventional product: Mitsubishi Electric S1 Series PM200SC1D060 Internal circuit diagram : SiC-SBD FWD_SW FWD_DC Power loss comparison IGBT_SW IGBT_DC P Approx. V Power loss [W] U 20% W reduction Si-IPM Hybrid SiC-IPM Condition:Vcc=300V, Io=85Arms, fc=15kHz, VD=15V,P.F=1, Modulation=1, three-phase modulation, Tj=125˚C N 1200V/75A Hybrid/Full SiC-IPM for Industrial Equipment PMH75-120-Sxxx*/PMF75-120-Sxxx* Sample available *Tentative No. Built-in drive circuit and protection functions realize high functionality Features Main specifications • Incorporates SiC-MOSFET with current sensor and built-in drive circuit and protection functions to deliver high functionality • Significant reduction in power loss compared to the conventional product* • Package compatible with the conventional product* Rating Mounted Functions 1200V/75A 6in1 • Built-in drive circuit • Under-voltage protection • Short-circuit protection • Over temperature protection (Monitoring IGBT chip surface) * Conventional product: Mitsubishi Electric IPM L1 Series PM75CL1A120 Internal circuit diagram Full SiC-IPM V W Gate Sense N 3 Source FWD_SW FWD_DC Power loss comparison SiC-MOSFET with current sense terminal Drain U :SiC-SBD Power loss [W] P :SiC-MOSFET Approx. Approx. reduction reduction 25% Si-IPM Hybrid SiC-IPM Tr_SW Tr_DC 70% Full SiC-IPM Condition:Vcc=600V, Io=31Arms (assuming a 15kW inverter), fc=15kHz, P.F=0.9, Modulation=1 ,three-phase modulation, Tj=125˚C 1200V/400A・1200V/800A Full SiC Power Modules for Industrial Equipment FMF400BX-24A/FMF800DX-24A Sample available Contributes to reducing size/weight of industrial-use inverters with the mounting area reduced by approx. 60% Features • Power loss reduced approx. 70% compared to the conventional product* • Low-inductance package adopted to deliver full SiC performance • Contributes to realizing smaller/lighter inverter equipment by significantly reducing the package size and realizing a mounting area approx. 60% smaller compared to the conventional product* *Conventional product:Mitsubishi Electric CM400DY-24NF(1200V/400A 2in1) 2pcs Product lineup Applications Industrial equipment Rated voltage Comparison with conventional product package Reted current Circuit configration 400A 4-in-1 800A 2-in-1 1200V Package size (D ×W) Si Power module 1200V/400A(2-in-1) 2pcs 92.3 × 121.7mm Full SiC Power module 1200V/400A(4-in-1) 1pcs or 1200V/800A(2-in-1) 1pcs Approx. 60% Footprint reduction Internal circuit diagram 1200V/400A Full SiC Power module :SiC-MOSFET :SiC-SBD FWD_SW FWD_DC Tr_SW Tr_DC 1200V/800A Full SiC Power module :SiC-MOSFET :SiC-SBD FWD_SW FWD_DC Tr_SW Tr_DC Power loss comparison Approx. 70% reduction IGBT module(Si) Full SiC module Condition:Vcc=600V, Io=110Arms (assuming a 55kW inverter), fc=15kHz, P.F=0.8, Modulation=1 ,three-phase modulation, Tj=125˚C 1200V/800A Full SiC Power module Power loss [W] Power loss [W] 1200V/400A Full SiC Power module Approx. 70% reduction IGBT module(Si) Full SiC module Condition:Vcc=600V, Io=222Arms (assuming a 110kW inverter), fc=15kHz, P.F=0.8, Modulation=1 ,three-phase modulation, Tj=125˚C 4 Hybrid SiC Power Modules for High-frequency Switching Applications Sample available For optimal operation of power electronics devices that conduct high-frequency switching Contributes to realizing highly efficient machinery that is smaller and lighter by reducing power loss and enabling higher frequencies Features • Power loss reduction of approx. 40% contributes to higher efficiency, smaller size and weight reduction of total system • Suppresses surge voltage by reducing internal inductance • Package compatible with the conventional product* * Conventional product: Mitsubishi Electric NFH Series IGBT Modules Internal circuit diagram FWD_SW FWD_DC Power loss comparison E2 C1 E1 C2E1 Tr_SW Tr_DC Approx. 40% Power loss [W] E2 G2 :SiC-SBD reduction G1 CM600DU-24NFH (Si-IGBT) CMH600DU-24NFH (Hybrid SiC) Condition:Vcc=600V, Io=600Ap, fc=15kHz, P.F=0.8, Modulation=1, three-phase modulation, Tj=125˚C Recovery waveform (FWD) Product lineup Applications CM600DU-24NFH (Si-IGBT) IE:100A/div CMH600DU-24NFH (Hybrid SiC) Industrial equipment Model Rated voltage Rated Circuit External size current configuration (DxW) CMH100DY-24NFH 100A 48 × 94mm CMH150DY-24NFH 150A 48 × 94mm CMH200DU-24NFH 62 × 108mm 200A 1200V 2-in-1 CMH300DU-24NFH 300A 62 × 108mm CMH400DU-24NFH 400A 80 × 110mm CMH600DU-24NFH 600A 80 × 110mm 200ns/div 5 600V/50A Large Hybrid SiC DIPIPMTM for PV Application PSH50YA2A6 New More efficient power modules for PV power conditioner applications Features ・Hybrid structure achieved with SiC Schottky barrier diode and 7th-generation. IGBT chips ・Power loss reduction of approx. 25% compared to the conventional product* ・Helps downsize PV inverter system thanks to modified short-circuit protection scheme *Conventional product:Mitsubishi Electric Large DIPIPMTM PS61A99 Internal circuit diagram :SiC-SBD Power loss comparison FWD_SW FWD_DC IGBT_SW IGBT_DC P VWP1 LVIC WP LVIC VP VWPC VVPC V W VN1 VN Approx. Power Loss [W] VVP1 25% reduction LVIC WN FO VNC CFO CIN N W N V VSC Si DIPIPMTM Hybrid SiC DIPIPMTM Condition:Vcc=300V, Io=25Arms, PF=0.8, fc=10kHz, Tj=125℃ 1700V/1200A Hybrid SiC Power Modules for Traction Inverters CMH1200DC-34S New High-power/low-loss/highly reliable modules appropriate for use in traction inverters Features Main specifications • Power loss reduced approximately 30% compared to the conventional product* • Highly reliable design appropriate for use in traction • Package compatible with the conventional product* Module Si-IGBT @150˚C SiC-SBD @150˚C 150˚C Max.operating temperature 4000Vrms Isolation voltage 2.3V Collector-emitter saturation voltage turn-on 140mJ Switching loss 850V/1200V turn-off 390mJ 2.3V Emitter-collector voltage 9.0µC Capacitive charge * Conventional product: Mitsubishi Electric Power Module CM1200DC-34N Internal circuit diagram :SiC-SBD 4 Power loss comparison FWD_SW FWD_DC IGBT_SW IGBT_DC 2 (C2) C2 E1 G1 G2 Si-IGBT Si-IGBT C1 Approx. Power loss [W] (E1) 30% reduction E2 3 (C1) 1 (E2) CM1200DC-34N CMH1200DC-34S Condition:Vcc=850V, Io=600Arms, fc=1kHz, P.F=1, Modulation=1, three-phase modulation, Tj=125˚C 6 Hybrid SiC DIPPFCTM/Full SiC DIPPFCTM for Home Appliances PSH20L91A6-A New / PSF20L91A6-A New Utilizing SiC enables high-frequency switching and contributes to reducing the size of peripheral components Features • Incorporating SiC chip in the Super mini package widely used in home appliances • The SiC chip allows high-frequency switching (up to 40kHz) and contributes to downsizing the reactor, heat sink and other peripheral components • Adopts the same package as the Super mini DIPIPMTM to eliminate the need for a spacer between the inverter and heat sink and to facilitate its implementation Power loss comparison Internal block diagram (Full SiC DIPPFCTM) :SiC-MOSFET L1 L2 LVIC CFo GND N2 Cin1 Cin2 N1 45% reduction Si DIPPFC™ Full SiC DIPPFC™ Condition:Vin=240Vrms, Vout=370V, Ic=20Arms, fc=40kHz, Tj=125˚C Interleaved PFC circuit configuration (for Hybrid SiC DIPPFCTM) :SiC-SBD Hybrid SiC DIPPFC™ P2 L1 Vin1 MCU High-frequency drive enables reactor sized to be reduced P1 VD Vin2 L2 LV IC Fo CFo Si-IGBT N2 AC input N1 GND + To inverter part PFC circuit and drive IC integrated making it possible to reduce size including smaller mounting area and simplified layout pattern Merits of combined use of SiC DIPIPMTM and DIPPFCTM Interleave PFC circuit in the case of discrete element configuration In the case of using SiC DIPIPMTM and DIPPFCTM configuration High adjustment spacer Di Tr PFC control and protection circuit parts Di Tr No need to use spacer for adjusting Merit 1 height when attaching heat sink 7 Tr_DC Approx. Power loss [W] Vin1 Fo Tr_SWoff Tr_SWon P1 P2 VD Vin2 FWD_SW FWD_DC :SiC-SBD DIPIPMTM SiC DIPPFCTM DIPIPMTM Integration of PFC circuit and drive IC made it possible to Merit 2 reduce the mounting area and make component more compact such as simplifying the wiring pattern SiC Power Module Lineup Unit : mm 1200V/75A Hybrid/Full SiC-IPM for Industrial Use PMH75-120-Sxxx* PMF75-120-Sxxx* 32.75 23 23 7 (3) 23 12 (SCREWING DEPTH) 7 94 17 21.14 18.49 23 Hybrid SiC Power Modules for High-frequency Switching Applications CMH 200DU-24NFH CMH 300DU-24NFH 7.5 17 12 6.72 22 39 3.5 6 6-M6 NUTS 110 93±0.25 (8.5) 7.5 14 23.72 Hybrid SiC Power Modules for High-frequency Switching Applications CMH 400DU-24NFH CMH 600DU-24NFH Tc measured point 108 93±0.25 14 14 22 39 (8.5) 4 56 30 31 32 4 12.7 40 34 2 33 3 1 Type name 18 SCREWING DEPTH MIN. 7.7 11.85±0.2 55.2±0.3 6-φ7 MOUNTING HOLES 14x2.54(-35.56) 0.45 0.45 SCREWING DEPTH MIN. 16.5 5±0.2 16 0.45 0.2 0.45 0.25 8 8.6 62±0.25 80 8-0.6 +1 2 18±0.2 44±0.2 57±0.2 4-C1.2 25 14±0.5 2.7 16±0.2 40±0.2 53±0.2 17.5 6 15 6 Lot No. 3MIN 38 -0 0.8 1 2.54±0.2 6-M4 NUTS (9) 18.25 0.28 70 ±0.3 79 ±0.5 1 18 10±0.3 10±0.3 10±0.3 10±0.3 10±0.3 10±0.3 1.8 38±0.5 20x1.778(-35.56) 35±0.3 14-0.5 0.28 1.778±0.2 (1) 4-M8 NUTS 57±0.25 2-ø4.5±0.2 TAB#110. t=0.5 18 LABEL 29 Type name , Lot No. 31±0.5 130±0.5 7 Hybrid/Full SiC DIPPFCTM for Home Appliances PSH20L91A6-A / PSF20L91A6-A 20±0.1 23 18 19 12 13 14 15 1617 20 7 8 9 1011 41 42 18 21.2 8.5 4 B 57±0.25 1 21.5 (2.2) A 2.54±0.3 2.8 7 1. 6 A (2.54×10) A 18 2R A B LABEL 124±0.25 140±0.5 A A A 2.8 14 25 TAB#110, t=0.5 1700V/1200A Hybrid SiC Power Modules for Tranction Inverters CMH1200DC-34S A = 2.54±0.3 B = 5.08±0.3 B B 7 18 14 25 +1.0 +1 Large Hybrid SiC DIPIPMTM for PV Application PSH50YA2A6 B 7 18 7.5 18 14 3-M6 NUTS 8.5 TAB#110, t=0.5 16 LABEL B 4-φ6.5 MOUTING HOLES 22 7 29 –0.5 16 2.5 4 21.2 7.5 29 –0.5 +1.0 7 21.5 29 –0.5 2-φ6.5MOUNTING HOLES 16 25 24±0.5 25 3-M6 NUTS 4-φ6.5 MOUNTING HOLES HEAT SINK SIDE 5.5±0.5 3-M5 NUTS 12 12 12 80±0.25 30±0.2 12 9.25 (10) (22.2) 17.5 6 15 6 48±0.25 62 7 4 25.7 18 8.85 8.25 18 13 48 4 23 3.81 3.81 3.81 19- 0.5 (9) 17 3.81 3.81 12 *Tentative No. Hybrid SiC Power Modules for High-frequency Switching Applications CMH100DY-24NFH CMH150DY-24NFH 41.35 44 13.64 6.5 LABEL 42.7 31.2 30 28 3 10.75 7.75 13.64 6-M5 NUTS SCREWING DEPTH 7.5 15- 0.64 4-φ5.5 MOUNTING HOLES (21.14) 19 19 6.5 19 13 19.05 121.7 110±0.5 94.5 39 22 57.5 50±0.5 19 9 57.15 92.3 62 19 5-M4 NUT 5 18.8 3.75 10 15 2 11.6 1.1 2.5 7 1 32 2-R7 13.5 9 4.06 55 2-φ 5.5 MOUNTING HOLES 15 2-φ 5.5 MOUNTING HOLES 16 15.25 3-2 6-2 13 10 25 5.57 106 16 3-2 12 8.5 1.65 50 39 7 67.4 17.5 5-2.54 10.16 14.5 17.5 4 10.16 3.25 19.75 16 19.75 3-2 16.5 2-2.54 1 10.16 2-2.54 2-2.54 23.79 120 7 (20.5) 13 11 106 ±0.3 11.75 120 7 1200V/400A,1200V/800A Full SiC Power Modules for Industrial Use FMF400BX-24A FMF800DX-24A 31 600V/200A Hybrid SiC-IPM for Industrial Use PMH200CS1D060 Terminology SiC Silicon Carbide FWD-SW Diode switching loss DIPIPM Dual-In-Line Package Intelligent Power Module Tr-SW Transistor switching loss IPM DIPPFC SBD MOSFET IGBT Tr Intelligent Power Module Dual-In-Line Package Power Factor Correction Schottky Barrier Diode Metal Oxide Semiconductor Field Effect Transistor Insulated Gate Bipolar Transistor Transistor FWD-DC Tr-DC IGBT-SW IGBT-DC PV CSTBT Diode DC loss Transistor DC loss IGBT switching loss IGBT DC loss Photovoltaics Mitsubishi Electric’s unique IGBT that makes use of the carrier cumulative effect 8 Development of Mitsubishi Electric SiC Power Devices and Power Electronics Equipment Incorporating Them Mitsubishi Electric began developing SiC as a new material in the early 1990s. Pursuing special characteristics, we succeeded in developing various elemental technologies. In 2010, we commercialized the first air conditioner in the world equipped with a SiC power device. Furthermore, substantial energy-saving effects have been achieved for traction and FA machinery. We will continue to provide competitive SiC power modules with advanced development and achievements from now on. 2010 January 2010 Developed large-capacity power module equipped with SiC diode Early 1990s 2011 January 2011 Verified highest power conversion efficiency*1 for solar power generation system power conditioner (domestic industry) October 2011 Commercialized SiC inverter for use in railcars Developed new material, silicon-carbide (SiC) power semiconductor, maintaining a lead over other companies 2000s October 2010 Launched "Kirigamine" inverter air conditioner Various elemental technologies developed 2006 January 2006 Successfully developed SiC inverter for driving motor rated at 3.7kW 2009 February 2009 Verified 11kW SiC inverter, world's highest value*1 with approx. 70% reduction in power loss November 2009 Verified 20kW SiC inverter, world's highest value*1 with approx. 90% reduction in power loss 9 Development of these modules and applications has been partially supported by Japan's Ministry of Economy, Trade and Industry (METI) and New Energy and Industrial Technology Development Organization (NEDO). 2012 March 2012 Developed motor system with built-in SiC inverter*2 September 2012 Verified built-in main circuit system for railcars 2014 February 2014 Developed EV motor drive system with built-in SiC inverter*2 May 2014 Began shipping samples of hybrid SiC power modules for high-frequency switching applications Contributing to the realization of a low-carbon society and more affluent lifestyles November 2014 Launch Large Hybrid SiC DIPIPMTM for PV Application 2015 January 2015 Launched power conditioner for PV equipped with full SiC-IPM 2013 February 2013 Developed SiC for application in elevator control systems*2 July 2012 Began shipping samples of hybrid SiC power modules March 2013 Delivered auxiliary power supply systems for railcars February 2013 Developed technologies to increase capacities of SiC power modules*2 May 2013 Launched SiC power modules December 2013 Launched railcar traction inverter with full SiC power module December 2012 Launched CNC drive unit equipped with SiC power module *1 Researched on press releases by Mitsubishi Electric. *2 Currently under development, as of May 2015. * The year and month listed are based on press releases or information released during the product launch month in Japan. 10 SiC POWER MODULES Please visit our website for further details. www.MitsubishiElectric.com Revised publication, effective May 2015. Superseding publication of HG-802B Sep. 2014. Specifications subject to change without notice. HG-802B 2015