PS205
InGaP HBT Gain Block
Features
Applications
5 - 3000MHz
Broadband Gain Block
22.2 dB Gain at 0.9GHz
Mobile Infrastructure
+13 dBm P1dB
Cellular, PCS, GSM, GPRS,
+26.4 dBm Output IP3
WCDMA, WiBro, WiMAX
Single Voltage Supply
W-LAN / DMB / ISM
Lead-free
Lead
free / Green / RoHSRoHS
CATV / DBS
compliant SOT-89 Package
RFID / Fixed Wireless
Functional Diagram
4
3
2
1
Function
Pin No.
RF IN
1
RF OUT / Bias
3
Ground
2,4
Description
The PS205 is a high performance InGaP HBT MMIC Amplifier and consists of Darlington pair amplifiers. The
amplifier features high linear performance, wideband operation, and high reliability. The PS205 operates from a
g voltage
g supply
pp y and requires
q
y two DC-blocking
g capacitors,
p
, a bias resistor and an inductor for operation.
p
only
single
The device is a general purpose buffer amplifier that offers high dynamic range in a low cost surface-mountable
plastic SOT-89 packages.
Specifications
Symbol
S21
S11
Parameters
Gain
Input Return Loss
S22
Output Return Loss
P1dB
Output Power @1dB
compression
OIP3
Output Third Order
intercept
Units
Freq.
Min.
Typ.
dB
75 MHz
900 MHz
1900 MHz
2300 MHz
23.5
23
5
22.2
19.6
18.0
dB
75 MHz
900 MHz
1900 MHz
2300 MHz
-25
-23
-15
-15
dB
75 MHz
900 MHz
1900 MHz
2300 MHz
-20
-27
-12
-10
dBm
75 MHz
900 MHz
1900 MHz
2300 MHz
14
13
11
10
dBm
75 MHz
900 MHz
1900 MHz
2300 MHz
27.5
26.4
23.4
21.3
75 MHz
900 MHz
1900 MHz
2300 MHz
2.0
2.1
2.3
2.4
NF
Noise Figure
dB
V/I
Device voltage / current
V/mA
3.5/35
Rth
Thermal Resistance
°C/W
93
Max.
Test Conditions : T=25°C, Supply Voltage=+4.5V, Rbias=28.5ohm, 50ohm System, OIP3 measured with two tones at an output power of +0dBm/tone
separated by 1MHz.
http://www.prewell.com
Page 1 of 4
February 2007
PS205
InGaP HBT Gain Block
T i l RF P
Typical
Performance
f
ffor 900MH
900MHz T
Tuned
dA
Application
li ti
Ci
Circuit
it
Supply Bias Voltage = 4.5V, R(bias)= 28.5 ohm, Current= 35mA
MHz
500
900
1500
1900
2300
S21
dB
23.0
22.4
20.8
19.7
18.2
S11
dB
-15
-24
-17
-16
-16
S22
dB
-13
13
-30
30
-17
17
-12
12
-10
10
P1dB
dBm
13.0
13.5
12.8
11.7
10.5
OIP3
dBm
25.4
26.5
25.2
23.5
21.4
Noise Figure
dB
2.2
2.2
2.2
2.3
2.4
Gain vs. Frequency
o
15
0.5
-10
-20
+25 C
o
-40 C
o
+85 C
1.5
2.0
-40
0.5
2.5
1.0
Frequency(GHz)
Output IP3 vs. Frequency
P1dB(dBm
m)
21
-50
0.5
2.5
1.0
1.5
2.0
2.5
Frequency(GHz)
NF vs. Frequency
5
14
4
12
3
10
o
+25 C
o
-40 C
o
+85 C
2
o
+25 C
o
-40 C
o
+85 C
8
1.0
1.5
2.0
6
0.5
2.5
1.0
Frequency(GHz)
1
o
+25 C
1.5
2.0
20
15
10
5
Gain
Output Power
-15
2.5
1.0
-10
-5
0
1.5
2.0
2.5
Frequency(GHz)
Output Power/Gain vs. Input Power @1.9GHz
Output Power/Gain vs. Input Power @0.9GHz
0
-20
0
0.5
Frequency(GHz)
25
25
Output P
Power(dBm)/Gain(dB)
OIP3(dBm
m)
2.0
P1dB vs. Frequency
16
24
15
0.5
1.5
Frequency(GHz)
27
18
o
+25 C
o
-40 C
o
+85 C
-40
NF(dB)
30
-30
o
+25 C
o
-40 C
o
+85 C
-30
1.0
-20
S22(dB)
21
Output Return Loss
0
-10
S11(dB)
Gain(dB)
24
18
Input Return Loss
0
Output Power(dBm)/Gain(dB)
27
Frequency
5
20
15
10
5
0
-20
Gain
Output Power
-15
-10
-5
0
5
Input Power(dBm)
Input Power(dBm)
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Page 2 of 4
February 2007
PS205
InGaP HBT Gain Block
Recommended Bias Values
900MH T
900MHz
Tuned
dA
Application
li ti
Ci
Circuit
it
Supply
Voltage
Supply Voltage
R bias Value
Size
4.5 V
28.5 Ω
0805
5V
47.0 Ω
1210
6V
71.0 Ω
1210
7V
99 0 Ω
99.0
2010
8V
128.0 Ω
2010
10 V
185.0 Ω
2010
12 V
242.0 Ω
2512
R Bias
1uF
56pF
22nH
RF IN
RF OUT
100pF
56pF
Typical RF Performance for 50 -500MHz
500MHz Tuned Application Circuit
Supply Bias Voltage = 4.5V, R(bias)= 28.5ohm, Current= 35mA
Frequency
MHz
75
125
300
500
S21 : Gain
dB
23.7
23.7
23.4
23.0
S11 : Input Return Loss
dB
-27
-29
-21
-17
S22 : Output Return Loss
dB
-21
-22
-19
-17
Output P1dB
dBm
14.1
14.1
13.9
13.6
Output IP3 @0dBm
dBm
27.7
27.7
27.8
26.9
Noise Figure
dB
2.0
2.1
2.2
2.3
Supply
Voltage
Gain vs. Frequency
28
1 F
1uF
820nH
RF IN
10nF
26
S21(dB)
R Bias
24
22
RF OUT
20
10nF
18
10nF
o
+25 C
0
100
200
300
400
500
600
Frequency(MHz)
Input Retrun Loss
0
Output Retrun Loss
0
-10
S22(dB)
S11(dB)
-10
-20
20
-20
-30
o
o
+25 C
+25 C
-40
0
100
200
300
400
500
-30
600
0
100
200
300
400
500
600
Frequency(MHz)
Frequency(MHz)
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Page 3 of 4
February 2007
PS205
InGaP HBT Gain Block
Absolute Maximum Ratings
Parameter
Rating
Unit
Device Voltage
+3.7
V
Device Current
130
mA
RF Power Input
0
dBm
Storage Temperature
-55 to +125
°C
A bi t Operating
Ambient
O
ti
Temperature
T
t
-40
40 tto +85
85
°C
Junction Temperature
155
°C
Operation of this device above any of these parameters may cause permanent damage.
Lead-free /RoHS Compliant / Green SOT-89 Package Outline
ESD / MSL Ratings
1. ESD sensitive device.
Observe Handling Precautions.
2. ESD Rating : Class 2(Passes at 2000V min.)
Human Body Model (HBM), JESD22-A114
3. ESD Rating : Class IV (Passes at 1000V min.)
Charged Device Model (CDM), JESD22-C101
4. MSL (Moisture Sensitive Level) Rating : Level 3
at +260°C Convection reflow, J-STD-020
Evaluation Board Layout (4x4)
Mounting Instructions
1. Use a large ground pad area with many plated
through-holes as shown.
2. We recommend 1 oz copper minimum.
3. Measurement for our data sheet was made on
0.8mm thick FR-4 Board.
4. Add as much copper as possible to inner and outer
l
layers
near the
h part to ensure optimal
i l thermal
h
l
performance.
5. RF trace width depends on the board material and
construction.
6. Add mounting screws near the part to fasten the
board to a heatsink.
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Page 4 of 4
February 2007