TRF3520
GSM RF MODULATOR/DRIVER AMPLIFIER
SLWS060A – MAY 1998
D
D
D
D
Modulation and Upconversion from I/Q
Baseband to RF on Single Chip
Designed for GSM Portable Cellular
Telephones
Internal VCO and SSB Mixer for Transmit
Carrier Generation
Internal RF Filter for Minimal External Parts
D
D
D
D
D
D
Power Amplifier Driver
Independent Power-Up/-Down Functions
3.75 -V Operation
Low Current Consumption
Serial Data Interface
48-Pin Plastic Quad Flatpack (PFB)
description
The TRF3520 radio frequency (RF) modulator/amplifier is a single-chip RF integrated circuit (IC) suitable for
900-MHz wireless global system for mobile communications (GSM) applications. It combines a direct
conversion RF in-phase/quadrature-phase (I/Q) modulator, a single-sideband suppressed carried (SSB) mixer,
an RF filter, a power amplifier (PA) driver, a buffered voltage-controlled oscillator (VCO), and a serial interface
into one small package. Very few external components are required. During idle operation, the individual
functional elements may be selectively placed in standby mode for minimum power consumption.
DB2_VCC
DIG_VCC
DIG_CLK
DIG_STR
DIG_DAT
DIG_GND
TXO_VCC
TXO_GND
TXO_SYN
NC
DB2_GND
DB2_OUT
PFB PACKAGE
(TOP VIEW)
48 47 46 45 44 43 42 41 40 39 38 37
TXO_TNK2
TXO_TNK1
TXO_GND
NC
NC
NC
PSUB
NC
DRV_GND
DRV_OUT–
DRV_OUT+
DRV_GND
1
36
2
35
3
34
4
33
5
32
6
31
7
30
8
29
9
28
10
27
11
26
12
25
TXM_VCC
TXM_GND
TXM_LO+
TXM_LO–
TXM_GND
TXM_GND
NC
PH2
PH1
MOD_GND
MOD_VCC
MOD_GND
DRV_GND
DRV_VCC
DRV_GND
NC
VBG_IN
NC
VBG_OUT
I+
I–
MOD_GND
Q+
Q–
13 14 15 16 17 18 19 20 21 22 23 24
NC – No internal connection
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the gates.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright  1998, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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1
TRF3520
GSM RF MODULATOR/DRIVER AMPLIFIER
SLWS060A – MAY 1998
functional block diagram
TXM_LO+
TXM_LO–
I+
I–
34
33
20
Power
Amplifier
Driver
21
∑
0°
DRV_OUT+ 11
To External
Band-Pass Filter,
Power Amplifier,
and Duplexer
DRV_OUT– 10
+
–
90°
Q+
Q–
Band-Pass
Filter (BPF)
23
Single-Sideband
Transmit Mixer
24
Buffer
I/Q Modulator
TXO_TNK2
1
External
Transmit
2
Tank
IF VCO
Buffer
46
TXO_TNK1
To SYNTH
(TXO_SYN)
Serial Interface
41
40
39
38
37
DIG_GND
Divide-by-Two
Output
(DB2_OUT)
DIG_DAT
43
DIG_STR
Low-Pass
Filter (LPF)
DIG_CLK
÷2
Limiter
DIG_VCC
Buffer
transmit IF VCO
The transmit intermediate frequency (IF) VCO generates a CW signal in the 200-MHz range. The IF VCO
frequency is controlled by applying voltage to the required external tank varactors. Through on-chip buffers, the
transmit IF VCO output is sent to the SSB transmit mixer and divide-by-two functional blocks, as well as to an
external synthesizer where the transmit IF VCO frequency is controlled and phase locked. The error signal
generated by the synthesizer is sent to the transmit IF VCO varactors’ tuning port, completing the phase-locked
loop (PLL) function. The VCO is characterized for operation in the 74-MHz to 494-MHz range.
divide-by-two
This functional block halves the IF VCO frequency and provides a buffered amplitude-limited and low-pass
filtered signal, which can become the LO signal for the TRF1020 GSM Receiver IC second down-conversion
stage.
single-sideband transmit mixer (SSB Tx)
The SSB Tx mixer combines an external LO signal with the on-chip transmit IF VCO and performs a
down-conversion function. The SSB Tx mixer suppresses the undesired upper sideband signal that is typically
generated under the normal mixing process. An internal band-pass filter at the SSB Tx mixer output further
reduces the undesired sideband and any spurious signals. This function eliminates the use of any external
filtering. The LO is characterized for operation in the 990-MHz to 1400-MHz range.
I/Q modulator
The modulator provides direct I/Q modulation from baseband to RF. The differential baseband I/Q input signals
also provide DC bias to the modulator. A nominal DC voltage of 1.35 V at the I and Q ports is required. Other
types of complex I/Q modulations are possible with the TRF3520, but the device is optimized to meet GSM
requirements.
2
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TRF3520
GSM RF MODULATOR/DRIVER AMPLIFIER
SLWS060A – MAY 1998
power amplifier driver output
The I/Q modulator output is fed to the power amplifier driver, which is a high-gain, low-distortion, fixed gain
amplifier. Its differential output can be converted to single-ended by a simple LC impedance-matching network
and a 4:1 balun.
serial control interface
The serial control interface provides power-up and power-down capabilities for each of the functional blocks
described in the previous paragraphs.
The TRF3520 device register is manipulated using a synchronous serial data port. The timing relationships are
defined in Figure 1. One 17-bit word is clocked into a temporary holding register with the least significant bit
clocked first. The operation register is loaded with the new data residing in the temporary registers using the
rising edge of the strobe input.
The format of the control word is described in Table 1. Bits zero through two are reserved for future use. Bits
three through seven are power conservation bits. Bits eight through 16 are reserved.
Table 1. Control Word Bit Assignments
BIT
FUNCTION
FUNCTIONAL IF
0
Reserved
–
1
Reserved
–
2
Reserved
–
3
Transmit oscillator and buffer amplifiers
1
4
Transmit mixer, LO buffer amplifier
1
5
Modulator
1
6
PA driver amplifier
1
7
Divide-by-two and limiter
1
8
Reserved
–
9
Reserved
–
10
Reserved
–
11
Reserved
–
12
Reserved
–
13
Reserved
–
14
Reserved
–
15
Reserved
–
16
Reserved
–
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TRF3520
GSM RF MODULATOR/DRIVER AMPLIFIER
SLWS060A – MAY 1998
Terminal Functions
TERMINAL
NAME
DESCRIPTION
DB2_GND
44
–
Divide-by-two circuitry ground
DB2_OUT
43
O
Divide-by-two frequency output
DB2_VCC
DIG_CLK
42
–
Divide-by-two circuitry bias supply
40
I
Digital clock input
DIG_DAT
38
I
Digital serial data input
DIG_GND
37
–
Digital ground
DIG_STR
39
I
Data strobe
DIG_VCC
DRV_GND
41
–
Digital supply
9, 12, 13, 15
DRV_OUT +
11
O
PA driver noninverting output
DRV_OUT –
10
O
PA driver inverting output
DRV_VCC
MOD_GND
14
–
PA driver bias supply
PA driver ground
22, 25, 27
Modulator ground
I+
20
I
Noninverting in-phase input
I–
21
I
Inverting in-phase input
Q+
23
I
Noninverting quadrature input
Q–
24
I
Inverting quadrature input
MOD_VCC
NC
26
–
Modulator supply
PSUB
4
I/O
NO.
4, 5, 6, 8, 16,18, 30, 45
No internal connection
7
TXO_GND
3, 47
–
Transmit VCO ground
TXO_SYN
46
O
Buffered transmit VCO output
TXO_TNK1
2
–
Transmit VCO tank connection 1
TXO_TNK 2
1
–
Transmit VCO tank connection 2
TXO_VCC
48
–
Transmit VCO supply
TXM_GND
31
–
Transmit mixer ground
TXM_GND
32
–
Transmit mixer ground
TXM_GND
35
–
Transmit mixer ground
TXM_LO +
34
I
Transmit mixer LO noninverting input
TXM_LO –
33
I
Transmit mixer LO inverting input
TXM_VCC
PH1
36
–
Transmit mixer supply
28
–
Phase adjustment resistor 1
PH2
29
–
Phase adjustment resistor 2
VBG_IN
17
Band gap input
VBG_OUT
19
Band gap output
POST OFFICE BOX 655303
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TRF3520
GSM RF MODULATOR/DRIVER AMPLIFIER
SLWS060A – MAY 1998
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage range: VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.3 V to 5.5 V
Input voltage to any other pin: VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.3 V to (VCC + 0.3) V
Power dissipation, TA = 25°C, 48-pin PQFP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW
Maximum operating junction temperature: TJmax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
Operating ambient temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 85 °C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150 °C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
recommended operating conditions
HIgh-level input voltage, VIH
Low-level input voltage, VIL
Supply voltage, VCC
Operating free-air temperature,TA
MIN
MAX
UNIT
2.0
VCC
0.8
V
– 0.3
3.6
3.9
V
– 40
85
°C
V
typical power consumption at 3.75 V (continuous operation)
MODULE
OPERATING CURRENT
STANDBY CURRENT
OPERATING POWER
STANDBY POWER
8 mA
<10 µA
30 mW
<38 µW
Transmit mixer (SSBM)
50 mA
<10 µA
188 mW
<38 µW
Modulator
18 mA
PA driver amplifier
45 mA
<10 µA
169 mW
<38 µW
Divide-by-two + LPF
10 mA
<10 µA
38 mW
<38 µW
Control logic
50 µA
<50 µA
492 mW
<152 µW
Transmit oscillator
Total
131 mA
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5
TRF3520
GSM RF MODULATOR/DRIVER AMPLIFIER
SLWS060A – MAY 1998
electrical characteristics over recommended operating free-air temperature range (unless
otherwise noted)
transmit IF VCO VCC = 3.75 V, TA = 25°C, ZO = 100 Ω (unless otherwise noted)
PARAMETER
TEST
CONDITIONS
Frequency range
Zload = 100 Ω
200-kHz offset
Output power (See Note 1)
Phase noise
Active mode
DC current
MIN
TYP
MAX
UNIT
141
194
247
MHz
– 20
– 15
dBm
–110
dBc/Hz
8
Standby mode
mA
10
µA
Power-up time (See Note 2)
10
µs
Power-down time
10
µs
NOTES: 1. Measured at buffer output pin labeled TXO_SYN
2. Includes oscillator starting time. This time is measured starting at strobe transition to high; there is additional time after a reset, i.e.,
applying VCC to the circuit.
6
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TRF3520
GSM RF MODULATOR/DRIVER AMPLIFIER
SLWS060A – MAY 1998
transmit mixer, I/Q modulator and PA driver PLO = –10 dBm, VCC = 3.75 V, TA = 25°C, ZO = 50 Ω (unless
otherwise specified)
PARAMETER
TEST CONDITIONS
LO input frequency range
MIN
TYP
1070
LO input power level
–12
PA driver RF output
880
PA driver RF output power level
See Note 7
Unwanted TX mixer sideband suppression at 1462 to 1497 MHz
LO = 1074 to 1109 MHz
35
DSB IM suppression
UNIT
1110
MHz
–8
dBm
915
MHz
6
dBm
45
dBc
See Note 3
20
Carrier suppression
See Note 4
30
35
dBc
Sideband suppression
See Note 4
35
45
dBc
Modulator and PA driver spurious outputs
I/Q input voltage range (differential)
Third order
–10
MAX
dBc
100 kHz to 500 MHz
See Note 5
500 to 850 MHz
See Note 5
880 to 915 MHz
Offset
925 to 935 MHz
See Note 5
85
935 to 960 MHz
See Note 5
82
960 to 1000 MHz
See Note 5
49
1000 to 1350 MHz
See Note 5
1350 to 1500 MHz
See Note 5
38
1500 to 1805 MHz
See Note 5
23
1805 to 1880 MHz
See Note 5
54
1880 to 12000 MHz
See Note 5
36
w600 kHz (see Note 5)
Each differential line
35
30
32
69
30
39
0.0
I/Q offset
dBc
1.80
5
I/Q common mode voltage
See Note 6
1.25
I/Q input impedance (differential)
See Note 8
10
kΩ
I/Q input impedance (single–ended)
See Note 8
10
kΩ
I/Q input frequency range
0
Power-up time
Power-down time
PA driver output broadband noise
1.35
± 10 MHz,
PA driver output =+ 6 dBm
1.45
VPP
mV
2
V
MHz
10
µs
10
µs
–131
dBc/Hz
NOTES: 3. Fout = 880 to 915 MHz, VI/Q = 1.40 VPP , 67.7 kHz sine wave. I & Q in-phase. Intermodulation suppression with respect to desired
sideband level
4. Fout = 880 to 915 MHz, VI/Q = 1.40 VPP , 67.7 kHz sine wave. I & Q in quadrature-phase. Carrier and undesired sideband suppression
with respect to desired sideband level
5. VI/Q = 1.40 Vpp, 67.7 kHz sinewave. I & Q in quadrature-phase.
6. The TCM4400 provides for a common-mode voltage of 1.35 ± 0.1 V or VCC/2 (software selectable)
7. Includes 1-dB loss associated with external balun
8. Specified by design.
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7
TRF3520
GSM RF MODULATOR/DRIVER AMPLIFIER
SLWS060A – MAY 1998
transmit mixer, I/Q modulator and PA driver PLO = –10 dBm, VCC = 3.75 V, TA = 25°C, ZO = 50 Ω (unless
otherwise specified) (continued)
divide-by-two VCC = 3.75 V, TA = 25°C, Zo=50 Ω (unless otherwise specified)
PARAMETER
TEST CONDITIONS
Input frequency range
MIN
TYP
MAX
UNIT
141
194
247
MHz
–25
FDB2_IN/2
–20
–10
dBm
Output frequency
DC current
Zload = 100 Ω
Active mode
DC current
Standby mode
Output power (see Note 8)
10
mA
10
µA
NOTE 9: Measured at buffer output pin labeled DB2_OUT
serial interface timing requirements with VCC = 3.75 V, TA = 25°C, ZO = 50 Ω (unless otherwise specified)
(see Figure 1)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
20
MHz
8
ns
Ri
CLOCK, DATA and STROBE input resistance
fclock
t(r) t(f)
CLOCK frequency
tw(High)
tw(Low)
Pulse duration, CLOCK high
20
ns
Pulse duration, CLOCK low
20
ns
Data setup time before CLOCK high
20
ns
Strobe setup time before CLOCK high
20
ns
Data hold time after CLOCK high
20
ns
Strobe hold time after CLOCK high
20
ns
tsu
th
10
kΩ
0
CLOCK input rise and fall time
2
REF_IN
tw(pulse) Strobe pulse width duration
ns
PARAMETER MEASUREMENT INFORMATION
Data
Valid
DATA
Data
Change
D0
D1
tsu
D22
th
– VIH
D23
– VIL
tw(High)
– VIH
CLOCK
– VIL
tsu
tw(Low)
th
tw(pulse)
STROBE
– VIH
– VIL
Clock Enabled
Shift in Data
Figure 1. TRF3520 Timing Relationships
8
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Clock Disabled
Store Data
TRF3520
GSM RF MODULATOR/DRIVER AMPLIFIER
SLWS060A – MAY 1998
TYPICAL CHARACTERISTICS
Typical GSM RF modulator characteristics were evaluated using a VCO frequency of 194 MHz and LO
frequency of 1094 MHz. The range of operation is specified in the document and is therefore customer specific.
PA DRIVER OUTPUT POWER
vs
TEMPERATURE
PA DRIVER OUTPUT POWER
vs
LO FREQUENCY
9
9
–40°C
8
VCC = 3.9 V
PA Driver Output Power – dBm
PA Driver Output Power – dBm
8
VCC = 3.75 V
7
6
VCC = 3.6 V
5
4
7
25°C
6
5
85°C
4
3
–60 –40
–20
60
0
20
40
T – Temperature – °C
80
3
1060
100
1070
1080
1090
1100
1110
1120
LO Frequency – MHz
Figure 3
Figure 2
PA DRIVER OUTPUT POWER
vs
LO POWER
TOTAL SUPPLY CURRENT, ICC
vs
TEMPERATURE
8.5
138
–40°C
I CC – Total Supply Current – mA
PA Driver Output Power –dBm
8
7.5
7
25°C
6.5
6
5.5
VCC = 3.9 V
134
VCC = 3.75 V
132
130
128
VCC = 3.6 V
126
124
5
85°C
4.5
4
–13
136
122
–11
–9
–7
120
–50
LO Power In – dBm
50
0
T – Temperature – °C
100
Figure 5
Figure 4
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9
TRF3520
GSM RF MODULATOR/DRIVER AMPLIFIER
SLWS060A – MAY 1998
TYPICAL CHARACTERISTICS
CARRIER SUPPRESSION
vs
TEMPERATURE
CARRIER SUPPRESSION
vs
LO INPUT POWER
–38
38
–40°C
Carrier Suppression – dBc
Carrier Suppression – dBc
VCC = 3.9 V
–37
VCC = 3.75 V
–36
VCC = 3.6 V
–35
37
36
25°C
35
85°C
–34
–60
–40
–20
0
20
40
60
T – Temperature – °C
80
34
–13
100
–12
CARRIER SUPPRESSION
vs
LO FREQUENCY
–8
–7
38
39
–40°C
Carrier Suppression – dBc
Carrier Suppression – dBc
–9
CARRIER SUPPRESSION
vs
I/Q DC OFFSET
40
38
–40°C
37
36
25°C
35
85°C
37
36
25°C
35
85°C
34
1075
1085
1105
1095
1115
34
1.2 1.25 1.3 1.35 1.4 1.45 1.5 1.55 1.6 1.65 1.7
LO Frequency – MHz
I/Q DC Offset – V
Figure 9
Figure 8
10
–10
Figure 7
Figure 6
33
1065
–11
LO Input Power – dBm
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TRF3520
GSM RF MODULATOR/DRIVER AMPLIFIER
SLWS060A – MAY 1998
TYPICAL CHARACTERISTICS
DSB IM SUPPRESSION
vs
LO FREQUENCY
SIDEBAND SUPPRESSION
vs
TEMPERATURE
–48
29.5
29
85°C
–46
Sideband Suppression – dBc
DSB IM Suppression – dBc
28.5
28
27.5
27
–40°C
26.5
26
25°C
25.5
25
VCC 3.9 V
VCC 3.75 V
–44
–42
VCC 3.6 V
–40
–38
–36
24.5
24
1060
1070
1100
1080
1090
LO Frequency – MHz
1110
–34
–50
1120
SIDEBAND SUPPRESSION
vs
LO INPUT POWER
SIDEBAND SUPPRESSION
vs
LO FREQUENCY
48
48
Sideband Suppression – dBc
Sideband Suppression – dBc
42
25°C
40
38
85°C
44
42
25°C
40
38
85°C
36
34
34
32
1060
–40°C
46
–40°C
44
36
100
Figure 11
Figure 10
46
50
0
T – Temperature – °C
1080
1100
1120
32
–13
–11
–9
–7
LO Input Power – dBm
LO Frequency – MHz
Figure 13
Figure 12
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11
TRF3520
GSM RF MODULATOR/DRIVER AMPLIFIER
SLWS060A – MAY 1998
TYPICAL CHARACTERISTICS
LO FEEDTHROUGH TO DRV_OUT
vs
TEMPERATURE
VCO OUTPUT POWER
vs
TEMPERATURE
–38
–10
–10.5
VCC = 3.75 V
VCO Output Power – dBm
LO Feedthrough to DRV_OUT – dBc
VCC = 3.9 V
–39
–40
VCC = 3.6 V
–41
–42
VCC = 3.9 V
–11.5
VCC = 3.6 V
–12
–40
–20
0
20
40
60
T – Temperature – °C
80
–13
–60 –40
100
–20
60
0
20
40
T – Temperature – °C
Figure 15
Figure 14
DB2 OUTPUT POWER
vs
TEMPERATURE
–16
DB2 Output Power – dBm
–16.5
–17
VCC = 3.6 V
VCC = 3.75 V
–17.5
–18
–18.5
VCC = 3.9 V
–19
–19.5
–20
–60
–40
–20
60
0
20
40
T – Temperature – °C
Figure 16
12
VCC = 3.75 V
–12.5
–43
–44
–60
11
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80
100
80
100
TRF3520
GSM RF MODULATOR/DRIVER AMPLIFIER
SLWS060A – MAY 1998
APPLICATION INFORMATION
Table 2. TRF3520 Application Board Parts List
DESIGNATORS
DESCRIPTION
VALUE
SIZE
MANUFACTURER
C1, 2, 3, 15
Capacitor
10 pF
QTY
4
0603
Murata
GRM39COG Series
MANUFACTURER P/N
C4, 5, 8, 10, 12,
14, 19, 32, 36, 37
Capacitor
.01 µF
10
0603
Murata
GRM39COG Series
C6, 23, 26, 30, 35
Capacitor
1000 pF
5
0603
Murata
GRMX7R Series
C7, 9, 11, 25, 28,
29, 33, 34, 38
Capacitor
100 pF
9
0603
Murata
GRM1R8X7R Series
C13, 31
Capacitor
10 µF
2
C
Panasonic
C16
Capacitor
22 pF
1
0603
Murata
GRM39COG Series
C17
Capacitor
8 pF
1
0603
Murata
GRM39COG Series
C18
Capacitor
7 pF
1
0603
Murata
GRM39COG Series
C20, 22
Capacitor
15 pF
2
0603
Murata
GRM39COG Series
ECS–T1DC106R
C21
Capacitor
4.7 pF
1
0603
Murata
GRM39COG Series
C24, 27
Capacitor
1.8 pF
2
0603
Murata
GRM39COG Series
C39
Capacitor
1.5 pF
1
0603
Murata
GRM39COG Series
L1
Inductor
100 nH
1
0603
Toko
LL1608–FR10K
L2
Inductor
47 nH
1
0603
Toko
LL1608–F47NK
L3
Inductor
56 nH
1
0603
Toko
LL1608–F56NK
L4, 5
Inductor
6.8 nH
2
0603
Toko
LL1608–F6N8K
J1, 3, 5, 6, 11
SMA connector
5
EF Johnson
142–0701–801
J2
Connector
1
Amp
P1, P2, P3
Connector
3
Molex
J7, 8, 9, 10
BNC connector
R2, 4, 6
Resistor
R3 ,5, 7
Resistor
1.5 kW
R8, 9, 10, 12, 18,
20
Resistor
R13, 14
Resistor
R15, 16
Resistor
R22
Resistor
U1
IC
1
TI
Varactor
Varactor
2
Motorola
MMBV2109LT1
T1
4:1 Balun
1
MA/COM
ETC1.6–4–2–3
1.0 kW
4
Amp
747250–4
46F522
413631–1
3
0603
Panasonic
P1.0KGCT–ND
3
0603
Panasonic
P1.5KGCT–ND
0
6
0603
Panasonic
P0.0GCT–ND
220
2
0603
Panasonic
P220GCT–ND
2
0603
Panasonic
P47KGCT–ND
1
0603
Digikey
P2.0KGCT–ND
47 kW
2 kW
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
TRF3520
13
TRF3520
GSM RF MODULATOR/DRIVER AMPLIFIER
SLWS060A – MAY 1998
APPLICATION INFORMATION
J11
TXM_LO
R2
VCC
C10
.01 µ F
1k
VCC
L1
C15
C16 10 pF 100 nH
C36
.01 µ F
DB2_OUT 22 pF
C5
.01 µ F
WORD_OUT
TP1
J3
TXO_SYN
1
C17
8.0 pF
C37
.01 µ F
C19
.01 µ F
SMA
23
22
40
21
20
17
46
47
C6
C35
1000 pF 1000 pF
15
14
48
13
1
R9
0
P3
2
+
C32
.01 µ F
C20
15 pF
C31
10 µ F
1
P2
2
R8
0
+
L4
C14
.01 µ F
L5
C22
15 pF
C25
100 pF
VCO_TUNE
P1
2
J5
SMA
Figure 17. TRF3520 Application Board Schematic
14
POST OFFICE BOX 655303
I+
J7
BNC
R 22
2k
VCC
1.8 pF
C24
C8
.01 µ F
3
2
1
C34
100 pF
C28
4
DRV_OUT
100 pF
5
C39
1.5 pF
ECT 1.6–4–2–3
VCC
C38
100 pF
1
C23
1000 pF
J8
BNC
R20
1.8 pF
R16
47 k
C13
10 µ F
I–
R21 0
C7
100 pF
6.8 nH 6.8 nH
4.7 pF
CR1
CR2
3
1
1
3
R15
47 k
R18
TP2
MMBV2109 MMBV2109
VCC
J9
BNC
R19 0
DNP
C27
L3
56 nH
C21
DIG_VCC
Q+
16
1
R14
220
C18
7.0 pF
19
18
U1
TRF3520
44
45
VCC
L2
47 nH
25
24
38
39
42
43
J1
SMA
37
41
DIG_VCC
R13
220
27
26
36
C4
.01 µ F
J10
BNC
R17 0
DNP
12
9
Q–
R12
10
11
J2:I
C11
100 pF
C3
10 pF
28
C12
.01 µ F
1k
R7
1.5 k
R10
R11 0
DNP
29
3
C33
100 pF
C30
1000 pF
8
9
R6
C9
100 pF
C29
100 pF
VCC
C2
10 pF
31
30
J2:C
R5
1.5 k
7
R4
5
C1
10 pF
33
32
J2:E
R3
1.5 k
5
6
1k
35
34
2
2
3
4
J2:B
SMA
• DALLAS, TEXAS 75265
C26
1000 pF
R11, R17, R19, R21 =
DNP (DO NOT PLACE)
J6
SMA
TRF3520
GSM RF MODULATOR/DRIVER AMPLIFIER
SLWS060A – MAY 1998
APPLICATION INFORMATION
The TRF3520 combines RF, IF, and digital signals. In order to obtain maximum performance, follow correct RFpwb
layout procedures.
J11
P3
P2
C13
C31
+
J10
R11
R10
TXM_LO
TRF3520 DEMO BOARD, EVM REV: A
COPYRIGHT: TEXAS INS. 1998
+
C14
C32
Q–
R9
J9
R17
R12
J2
J1
C38
C10
C33
C11
C28
DB2_OUT
Q+
R19
R18
L1
C15
R13
C38
C37
C19
TXO_SYN
R22
C8
C34
C17
L2
C18
R14
C21
C36
R15 CR1 C20
P1
T1
C27
C26
C39
J6
J7
I+
C28
CR2
C25
C24
R16
C38
L3
VCO_TUNE
L5
L4
C22
J5
C23
I–
R21
R20
J3
J8
DRV_OUT
C16
U1
Figure 18. TRF3520 Application Board Layout
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
15
TRF3520
GSM RF MODULATOR/DRIVER AMPLIFIER
SLWS060A – MAY 1998
MECHANICAL DATA
PFB (S-PQFP-G48)
PLASTIC QUAD FLATPACK
0,27
0,17
0,50
36
0,08 M
25
37
24
48
13
0,13 NOM
1
12
5,50 TYP
7,20
SQ
6,80
9,20
SQ
8,80
Gage Plane
0,25
0,05 MIN
0°– 7°
1,05
0,95
Seating Plane
0,75
0,45
0,08
1,20 MAX
4073176 / B 10/96
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. Falls within JEDEC MS-026
16
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
IMPORTANT NOTICE
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any product or service without notice, and advise customers to obtain the latest version of relevant information
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accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
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Copyright  2000, Texas Instruments Incorporated