DESIGN APPLICATION NOTE - AN-078
SXB-2089Z Amplifier Application Circuits
Abstract
Circuit Details
5)0'
V SXB-2089 is a high high linearity InGaP/
GaAs Heterojunction Bipolar Transistor (HBT) MMIC designed
for operation from 5 to 2500 MHz. This application note illustrates application circuits for 450MHz (Mobile Wireless Band) &
2140MHz (UMTS Band).
RFMD will provide the detailed layout (AutoCad format) to
users wishing to use the exact same layout and substrate
material shown in the following circuits. The circuits
recommended within this application note were designed
using the following PCB material:
Introduction
The application circuits herein were designed to achieve the
optimum combination of linearity, input return loss, and
stability. All recommended components are standard values
available from well-known manufacturers. Components
specified in the bill of materials (BOM) have known
parasitics which in some cases are critical to the circuit’s
performance. Deviating from the recommended BOM may
result in a performance shift due to varying parasitics
Matching component placement is critical to each circuit’s
performance.
S im p lifie d D e v ic e S c h e m a tic w ith E S D d io d e s
Material: GETEK™ ML200C
Core thickness: 0.031”
Copper cladding: 0.5 oz both sides
Dielectric constant: 4.1 (at 1 MHz)
Dielectric loss tangent: 0.0089 (at 1 GHz)
Customers not wishing to use the exact material and
layouts shown in this application note can design their own
PCB using the critical transmission line impedances and
phase lengths shown in the BOMs and layouts.
NOTE: Many of our sample evaluation boards may come
with an additional substrate & copper layer for mechanical
stability. It has been assumed that the backside layer has
no effect on the RF performance or circuit design.
N a rro w b a n d
A p p . C k t.
V c /O u tp u t
N a rro w b a n d
A p p . C k t.
In p u t
.
G nd
Freq.(MHz)
420
450
480
2110
2140
2170
Vd (V)
5.2
5.2
5.2
5.2
5.2
5.2
Id (mA)
135
135
135
135
135
135
P1dB
24.2
24.1
24.1
24.8
24.7
24.7
Performance Summary
OIP3
40.4
39.7
39.9
43.0
43.6
43.9
ACP Ch. Pwr.
16.0
15.6
NF
4.6
4.9
5.3
4.1
4.2
4.4
S11
-17.9
-32.8
-20.1
-18.1
-19.3
-16.4
Gain
25.4
25.3
25.1
17.1
17.1
16.9
Isol
-30.2
-30.0
-29.9
-23.1
-23.0
-23.0
S22
-33.8
-24.4
-17.1
-21.5
-22.9
-22.0
Vs=8V, RBias=20 Ohm, T=+25C
IP3 with 11dBm Tones/1MHz spacing
ACP Ch. Pwr. at 450MHz = -55dBc IS-95 with 9Ch. Fwd
estat
Conditions:
ACP Ch. Pwr.
2140MHz = -50dBc WCDMAwith 64Ch. Fwd
The information provided herein is believed to be reliable at press time.
RFMD assumes no responsibility for i naccuracies or omissions. RFMD assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to chang
e without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party . RFMD does not authorize or warrant any RFMD product for use in lif e-support devices and/or systems. Copyright 2005 RFMD. All worldwide right s
reserved.
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.RFMD.com
EAN-104670 Rev A
DESIGN APPLICATION NOTE - AN-078
SXB-2089Z Amplifier Application Circuits
450 MHz Application Circuit Data, ID=135mA, T=+25C, RBias=20 Ohm, VS=8V
P1dB vs. Frequency
26
ACP vs. Ch. Power (IS-95 9 Ch. Fwd. 450MHz)
-40
26
ACP (dB)
P1dB (dBm)
-40C
85C
-50
25
24
24
25C
23
-55
-60
-65
-40C
-70
85C
23
-75
Test 22
Conditions:
420
25C
-45
25
430
440
450
460
470
10
480
11
12
28
18
19
S22
-15
-20
24
dB
Gain (dB)
17
S12
-10
25C
22
420
-25
-40C
-30
85C
-35
440
460
480
-40
420
500
Frequency (MHz)
OIP3 vs. Freq. (11dBm Output Tones)
430
44
44
42
42
440
450
Frequency (MHz)
460
470
480
OIP3 vs. Tone Power @450MHz
46
25C
-40C
OIP3 (dBm)
OIP3 (dBm)
16
S11
-5
26
46
15
Input/Output Return Loss,
Isolation vs. Frequency, T=25C
S21 vs. Temperature
0
20
400
14
Channel Power (dBm)
Frequency (MHz)
30
13
40
38
25C
85C
40
38
-40C
36
34
420
85C
430
36
440
450
460
470
480
34
Frequency (MHz)
2
4
6
8
10
Pout per tone (dBm)
12
14
16
880 MHz & 1960MHz Application Circuits available in Datasheet at www.RFMD.com
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.RFMD.com
EAN-104670 Rev A
DESIGN APPLICATION NOTE - AN-078
SXB-2089Z Amplifier Application Circuits
2140 MHz Application Circuit Data, ID=135mA, T=+25C, RBias=20 Ohm, VS=8V
P1dB vs. Frequency
26
ACP vs. Ch. Pwr. (WCDMA 64Ch. Fwd 2140MHz)
-35
26
25
24
25C
-45
85C
-40C
-50
24
25C
-55
-40C
23
85C
-60
23
22
2110
-40
ACP (dB)
P1dB (dBm)
25
2120
2130
2140
2150
2160
2170
-65
11
12
13
0
25C
-40C
85C
20
16
17
18
S11
-5
S12
S22
-10
18
-15
-20
16
dB
Gain (dB)
15
Input/Output Return Loss,
Isolation vs. Frequency, T=25C
S21 over Temperature
22
14
Channel Power (dBm)
Frequency (MHz)
-25
-30
14
-35
12
2110
2120
2130
2140
2150
2160
-40
2110
2170
Frequency (MHz)
OIP3 vs. Freq. (11dBm Output Tones)
44
44
42
42
40
25C
38
-40C
85C
36
34
2110
2120
2130
2140
2150
2160
2170
2130
2140
Frequency (MHz)
2150
2160
2170
OIP3 vs. Tone Power @2140MHz
46
OIP3 (dBm)
OIP3 (dBm)
46
2120
40
38
25C
36
85C
-40C
34
Frequency (MHz)
2
4
6
8
10
Pout per tone (dBm)
12
14
16
880 MHz & 1960MHz Application Circuits available in Datasheet at www.RFMD.com
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
3
http://www.RFMD.com
EAN-104670 Rev A
DESIGN APPLICATION NOTE - AN-078
SXB-2089Z Amplifier Application Circuits
Application Schematic & Assembly Drawing 450MHz Circuit
Note: Electrical lengths
50Ω, 5.0°
50Ω, 2.1°
50Ω, 2.0°
50Ω, 1.6°
50Ω, 1.2°
50Ω, 3.4°
50Ω, 2.1°
50Ω, 1.5°
50Ω, 1.5°
50Ω, 2.1°
50Ω, 1.7°
50Ω, 2.0°
50Ω, 3.4°
50Ω, 3.3°
RF In
Ζ11
Ζ6
68Ω
270nH
Ζ2
5.6nH
Ζ3
3.9Ω
120nH
SXB-2089Z
Ζ4
Ζ7
Ζ10
Ζ12
Ζ13
15nH
12pF
Ζ9
47pF
1.0uF Tantalum
1200pF
Ζ8
Ζ1
20Ω
180Ω
Ζ5
Ζ1
Ζ2
Ζ3
Ζ4
Ζ5
Ζ6
Ζ7
Ζ8
Ζ9
Ζ10
Ζ11
Ζ12
Ζ13
Ζ14
are determined from
the center of a shunt component and a cut on
the center trace
1200pF
Ζ14
3.9pF
120pF
RF Out
910Ω
+
Bill of Materials
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
4
C1
TAJB105KLRH Rohm 1.0uF
C2,C5 MCH185C122KK Rohm 1200pF
C3
MCH185A121JK Rohm 120pF
C4
MCH185A3R9CK Rohm 3.9pF
C6
MCH185A120JK Rohm 12pF
C7
MCH185A470JK Rohm 47pF
L1
LL1608-FSR12J Toko 120nH
L2
LL1608-FS15NJ Toko 15nH
L3
LL1608-FSR27J Toko 270nH
L4
LL1608-FS5N6S Toko 5.6nH
R1
20Ω 2512 res (1%)
R2
180Ω 0603 res (5%)
R3
68Ω 0603 res (5%)
R4
3.9Ω 0603 res (5%)
R5
910Ω 0603 res (5%)
Connectors 2x PSF-S01-1mm GigaLane Co.
Heat sink
EEF-101407
PCB
ECB-102925-B
http://www.RFMD.com
EAN-104670 Rev A
DESIGN APPLICATION NOTE - AN-078
SXB-2089Z Amplifier Application Circuits
Application Schematic & Assembly Drawing 2140MHz Circuit
Note: Electrical lengths
50Ω, 8.6°
50Ω, 7.8°
50Ω, 7.3°
50Ω, 6.3°
50Ω, 5.5°
50Ω, 16.3°
50Ω, 10.2°
50Ω, 7.0°
50Ω, 7.0°
50Ω, 10.2°
50Ω, 8.0°
50Ω, 39.1°
50Ω, 6.9°
Ζ11
Ζ6
68Ω
1.5pF
2.7Ω
Ζ3
Ζ4
Ζ10
Ζ7
2.2pF
1200pF
Ζ9
RF In
Ζ2
8.2nH
SXB-2089Z
Ζ8
Ζ1
1.0uF Tantalum
1200pF
27nH
2.2pF
20Ω
180Ω
Ζ5
Ζ1
Ζ2
Ζ3
Ζ4
Ζ5
Ζ6
Ζ7
Ζ8
Ζ9
Ζ10
Ζ11
Ζ12
Ζ13
are determined from
the center of a shunt component and a cut on
the center trace
Ζ12
Ζ13
1.0pF
12pF
RF Out
1.8ΚΩ
+
Bill of Materials
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
5
C1
TAJB105KLRH Rohm 1.0uF
C2,C5 MCH185C122KK Rohm 1200pF
C3
MCH185A120JK Rohm 12pF
C4
MCH185A010CK Rohm 1.0pF
C6
MCH185A1R5CK Rohm 1.5pF
C7,C8 MCH185A4R7CK Rohm 2.2pF
L1
LL1608-FS8N2J Toko 8.2nH
L2
LL1608-FS270JK Toko 27nH
R1
20Ω 2512 res (1%)
R2
180Ω 0603 res (5%)
R3
68Ω 0603 res (5%)
R4
2.7Ω 0603 res (5%)
R5
1.8KΩ 0603 res (5%)
Connectors 2x PSF-S01-1mm GigaLane Co.
Heat sink
EEF-101407
PCB
ECB-102925-B
http://www.RFMD.com
EAN-104670 Rev A