FMMT459
500V Silicon NPN high voltage switching transistor
Summary
V(BR)CEV > 500V
V(BR)ECV > 6V
Ic(cont) = 150 mA
Vce(sat) = 70 mV @ 50 mA
Description
This new high voltage transistor provides users with very efficient performance, combining low
VCE(SAT) high Hfe to give extremely low on state losses at 500V operation, making it ideal for use
in high efficiency Telecom and protected line switching applications.
Features
■ 6V reverse blocking capability
■ Low saturation voltage - 90mV @ 50mA
■ Hfe ⬎ 50 @ 30 mA
■ IC=150mA continuous
■ SOT23 package with Ptot 625mW
■ Specification can be supplied in other package outlines
Applications
■ Electronic test equipment
■ Offline switching circuits
■ Piezo actuators
■ RCD circuits
Ordering information
Device
Pin out - top view
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
FMMT459TA
7
8
3,000
FMMT459TC
13
8
10,000
Device marking
459
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FMMT459
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
500
V
Collector-emitter voltage
VCEV
500
V
Collector-emitter voltage
VCEO
450
V
Emitter-base voltage
VEBO
6
V
Emitter-collector voltage
VECV
6
V
ICM
0.5
A
Continuous collector current*
IC
0.15
A
Base current
IB
0.2
A
Power dissipation @ TA=25°C*
Linear derating factor
PD
625
5
mW
mW/°C
Power dissipation @ TA=25°C†
Linear derating factor
PD
806
6.4
mW
mW/°C
Tj:Tstg
-55 to
+150
°C
Symbol
Value
Unit
Junction to ambient*
R⍜JA
200
°C/W
Junction to ambient†
R⍜JA
155
°C/W
Peak pulse current
Operating and storage temperature range
Thermal resistance
Parameter
NOTES:
* For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of 1oz copper, in still air conditions
† as above measured at t<5secs.
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FMMT459
Thermal characteristics
Max Power Dissipation (W)
IC Collector Current (A)
1
100m
DC
1s
100ms
10m
10ms
1ms
100µs
Single Pulse T amb=25°C
1m
100m
1
10
100
V CE Collector-Emitter Voltage (V)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
20
40
60
80
100 120 140 160
Temperature (°C)
Derating Curve
Safe Operating Area
Thermal Resistance (°C/W)
0.7
200
150
D=0.5
100
Single Pulse
D=0.2
50
D=0.05
D=0.1
0
100µ
1m
10m 100m
1
Pulse Width (s)
10
100
1k
Transient Thermal Impedance
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FMMT459
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Collector-base
breakdown voltage
BVCBO
500
Collector-emitter
breakdown voltage
BVCEV
Collector-emitter
breakdown voltage
Max.
Unit
Conditions
700
V
IC = 100␮A
500
700
V
IC = 10␮A,
0.3V > VBE > -1V
BVCEO
450
500
V
IC = 10mA*
Emitter-base
breakdown voltage
BVEBO
6
8.1
V
IE = 100␮A
Emitter-base
breakdown voltage
(reverse blocking)
BVECV
6
8.1
V
IC = 1␮A,
0.3V > VBC > -6V
Collector-emitter
cut-off current
ICES
100
nA
VCE=450V
Collector-base
cut-off current
ICBO
100
nA
VCB=450V
Emitter-base
cut-off current
IEBO
100
nA
VEB=5V
Static forward current
transfer ratio
HFE
Collector-emitter
saturation voltage
VCE(sat)
Base-emitter
saturation voltage
VBE(sat)
Base-emitter turn-on
voltage
VBE(on)
Transition frequency
fT
Output capacitance
Cobo
Turn-on time
t(ON)
Turn-off time
t(OFF)
50
120
IC = 30mA, VCE = 10V
70
IC = 50mA*, VCE = 10V
60
75
90
mV
mV
0.76
0.9
V
IC = 50mA, IB = 5mA*
0.71
0.9
V
IC = 50mA, VCE = 10V*
MHz
IC = 10mA, VCE = 20V
f = 20MHZ
PF
VCB = 20V, f = 1MHZ
113
ns
IC = 50mA, VC = 100V
IB1 = 5mA, IB2 = 10mA
3450
ns
IC = 50mA, VC = 100V
IB1 = 5mA, IB2 = 10mA
70
50
5
IC = 20mA, IB = 2mA*
IC = 50mA, IB = 6mA*
NOTES:
* Measured under pulsed conditions. Pulse width = 300␮s; duty cycle <2%
Note: For high voltage applications, the appropriate industry sector guidelines should be
considered with regards to voltage spacing between Terminals.
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FMMT459
Electrical characteristics
0.40
1
Tamb=25°C
0.35
0.30
VCE(SAT) (V)
VCE(SAT) (V)
IC/IB=50
100m
IC/IB=10
IC/IB=20
10m
1m
0.20
0.10
10m
100m
1m
IC Collector Current (A)
100°C
25°C
90
-55°C
60
0.2
30
10m
100m
100m
IC/IB=20
180
120
0.6
10m
IC Collector Current (A)
1.0
210
150
0.0
1m
-55°C
VCE(SAT) v IC
Typical Gain (hFE)
VBE(SAT) (V)
Normalised Gain
VCE=10V
0.4
25°C
0.15
0.05
1.0
0.8
100°C
0.25
VCE(SAT) v IC
1.2
IC/IB=20
0.8
-55°C
0.6
100°C
0.4
1m
0
IC Collector Current (A)
25°C
10m
100m
IC Collector Current (A)
VBE(SAT) v IC
hFE v IC
1.0
VCE=10V
VBE(ON) (V)
0.8
-55°C
0.6
0.4
1m
25°C
100°C
10m
100m
IC Collector Current (A)
VBE(ON) v IC
Issue 5 - August 2005
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FMMT459
Packaging details - SOT23
L
H
N
G
D
3 leads
M
A
B
C
K
F
Package dimensions
Dimensions in inches are control dimensions, dimensions in millimeters are approximate.
Dim.
Millimeters
Inches
Min.
Max.
Min.
Max.
A
2.67
3.05
0.105
0.120
B
1.20
1.40
0.047
C
-
1.10
D
0.37
F
0.085
G
Dim.
Millimeters
Inches
Min.
Max.
Max.
Max.
H
0.33
0.51
0.013
0.020
0.055
K
0.01
0.10
0.0004
0.004
-
0.043
L
2.10
2.50
0.083
0.0985
0.53
0.015
0.021
M
0.45
0.64
0.018
0.025
0.15
0.0034
0.0059
N
0.95 Nom.
-
-
1.90 Nom.
0.075 Nom.
-
0.0375 Nom.
-
-
Europe
Americas
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Corporate Headquarters
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Zetex Inc
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Hauppauge, NY 11788
USA
Zetex (Asia Ltd)
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 5 - August 2005
© Zetex Semiconductors plc 2005
6
www.zetex.com