NMLU1210
Full Bridge Rectifier
Dual 20 V N−Channel with dual 3.2 A Schottky Barrier Diode, 4.0 x
4.0 x 0.5 mm mCool™ Package
Features
•
•
•
•
•
•
•
•
Full−Bridge Rectifier Block
Up to 3.2 A operation
Low RDS(on) MOSFET to minimize conduction loss
Low gate charge MOSFET
Low VF Schottky diode
Ultra Low Inductance Package
This Device uses Halogen−Free Molding Compound
These are Pb−Free Devices
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MOSFET
RDS(on) TYP
V(BR)DSS
ID MAX
23 mW @ 4.5 V
20 V
3.2 A
17 mW @ 10 V
SCHOTTKY DIODE
Applications
VR MAX
VF TYP
IF MAX
20 V
0.45 V
3.2 A
• Wireless Charging
• AC−DC Rectification
• Optimized for Power Management Applications for Portable
Products, such as Cell Phones, PMP, DSC, GPS, and others
RECTIFIER MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Symbol
Parameter
Input voltage between two MOSFET drain
Value
Unit
VLL
20
V
TJ, TSTG
−55 to
125
°C
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Continuous Drain Current
R_JA (Note 1)
TA = 25°C
IO
2.2
A
Power Dissipation
R_JA (Note 1)
TA = 25°C
Continuous Drain Current
R_JA t < 5 s (Note 1)
TA = 25°C
Power Dissipation
R_JA t < 5 s (Note 1)
TA = 25°C
Continuous Drain Current
R_JA (Note 2)
TA = 25°C
Bridge Operating Junction and Storage
Temperature
PD
IO
PD
W
2.34
IO
PIN CONNECTIONS
Vout
Vout
Vout
L1_1
GND1
W
0.47
GND1
0.185
L1_2
L1_2
PD
1210
AYWWG
G
1210
= Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(*Note: Microdot may be in either location)
A
1.16
GND2
GND2
(Top View)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size
of 30 mm2, 2 oz. Cu.
August, 2013 − Rev. 1
UDFN
CASE 517BS
0.6
TA = 85°C
© Semiconductor Components Industries, LLC, 2013
Ç
ÇÇ
0.94
TA = 85°C
TA = 85°C
A
3.2
1.88
TA = 85°C
TA = 25°C
W
1.2
0.47
TA = 85°C
MARKING DIAGRAM
L1_1
Power Dissipation
R_JA (Note 2)
1.16
TA = 85°C
RECTIFIER
4.0 4.0 mm mCool Pin Connections
(Top View)
1
ORDERING INFORMATION
Device
Package
Shipping†
NMLU1210TWG
UDFN
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NMLU1210/D
NMLU1210
THERMAL RESISTANCE RATINGS
Symbol
Max
Unit
Junction−to−Ambient – Steady State (Note 3)
Parameter
RθJA
82.5
°C/W
Junction−to−Ambient – t ≤ 5 s (Note 3)
RθJA
42.5
Junction−to−Ambient – Steady State min Pad (Note 4)
RθJA
209
3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface−mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz. Cu.
BRIDGE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Rectifying Forward Voltage (Note 5)
Vfd2
Rectifier leakage current
Rectifier Reverse leakage current
Min
Typ
Max
Unit
Input voltage VLL = ±5 V;
The output current of Rectifier Iout = 2 A
0.45
.56
V
Ileak
Input voltage VLL = 16 V;
No Load on the Rectifier output
31
1000
uA
Irleak
Input voltage VLL = 0 V;
The output voltage of the Rectifier
Vout = 5 V
21
1000
uA
Typ
Max
Unit
2.2
V
ON CHARACTERISTICS
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Test Condition
Min
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
1.2
Negative Threshold Temperature
Coefficient
VGS(TH) /
TJ
Drain−to−Source On Resistance
(Note 6)
RDS(on)
Parameter
ON CHARACTERISTICS
Forward Transconductance
gFS
4
mV/°C
VGS = 10 V, ID = 3.2 A
17
26
VGS = 4.5 V, ID = 3.2 A
23
32
VDS = 10 V, ID = 2.0 A
3.5
S
TJ = 25°C
0.79
V
TJ = 125°C
0.65
mW
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage (Note 6)
VSD
VGS = 0 V, IS = 2.0 A
6. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Maximum Instantaneous Forward
Voltage (Note 7)
VF
Min
Typ
IF = 1.0 A
0.36
IF = 2.0 A
0.41
Maximum Instantaneous Reverse
Current
IR
VR = 20 V
0.04
Max
Unit
V
mA
7. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 100°C unless otherwise specified)
Parameter
Maximum Instantaneous Forward
Voltage (Note 8)
Maximum Instantaneous Reverse
Current
Symbol
Test Condition
VF
IR
Min
Typ
IF = 1.0 A
0.29
IF = 2.0 A
0.36
VR = 20 V
4
Max
Unit
V
mA
8. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
9. For detailed MOSFET and Diode parameters, please refer to the ON Semiconductor datasheets of NTTFS4930N and MBR230LSFT1G.
The test on each individual die is limited to the system package.
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2
NMLU1210
Figure 1. Typical Application Circuit
GND1 and GND2 are not internally connected. The user should make the connection in the PCB design.
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3
NMLU1210
TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise specified)
10
1
IF, INSTANTANEOUS FORWARD
CURRENT (A)
IF, INSTANTANEOUS FORWARD
CURRENT (A)
10
125°C
25°C
−55°C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Bridge Typical Forward Voltage Drop
at Vin . 5 V
Figure 3. Bridge Maximum Forward Voltage
Drop at Vin . 5 V
1.8
1k
ILEAK, OUTPUT LEAKAGE (mA)
1k
100
Maximum
10
1
Typical
0.1
0.01
25
35
45
55
65
75
85
95
105
100
Typical
1
0.1
0.01
25
115 125
Maximum
10
35
45
55
65
75
85
TJ, TEMPERATURE JUNCTION (°C)
105
115 125
Figure 5. Input Leakage at 16 V vs. Junction
Temperature
700
40
ID = 2 A
TJ = 25°C
600
95
TJ, TEMPERATURE JUNCTION (°C)
Figure 4. Output Leakage at 5 V Bias vs.
Junction Temperature
ID = 2 A
TJ = 25°C
35
RDS(on) (mW)
500
RDS(on) (mW)
25°C
125°C
0.1
1.8
10k
OUTPUT LEAKAGE (mA)
−55°C
400
300
30
25
200
20
100
0
2.0
3.0
4.0
5.0
6.0
7.0
VGS (V)
8.0
9.0
15
2.0
10
3.0
4.0
5.0
6.0
7.0
8.0
9.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 6. FET Typical On−Resistance vs.
Gate−to−Source Voltage ( from 3 V to 10 V)
Figure 7. FET Typical On−Resistance vs.
Gate−to−Source Voltage
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4
10
NMLU1210
TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise specified)
100
1
0.1
IR, INSTANTANEOUS REVERSE
CURRENT (mA)
IF, INSTANTANEOUS FORWARD
CURRENT (A)
10
125°C
25°C
1.0
0.1
25°C
0.01
−55°C
0
125°C
10
0.1 0.2 0.3
0.4
0.5 0.6 0.7
0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
0.001
0
0.9
Figure 8. Schottky Typical Forward Current vs.
Forward Voltage
5
10
15
20
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 9. Schottky Typical Reverse Current vs.
Reverse Voltage
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5
25
NMLU1210
PACKAGE DIMENSIONS
UDFN8 4x4, 0.8P
CASE 517BS
ISSUE A
A
B
D
PIN ONE
REFERENCE
ÉÉÉ
ÉÉÉ
DETAIL A
ALTERNATE
CONSTRUCTIONS
TOP VIEW
ÇÇÇÇ
Ç
ÇÇÇ
ÇÇ
0.08 C
(A3)
NOTE 4
SIDE VIEW
ÇÇ
ÉÉ
ÉÉ
EXPOSED Cu
A
DETAIL B
0.10 C
L3
L1
L
E
0.15 C
0.15 C
C
0.10
D2
M
MOLD CMPD
A1
ÉÉ
ÇÇ
ÇÇ
ALTERNATE
CONSTRUCTIONS
SEATING
PLANE
C A B
NOTE 5
DETAIL A
F/2
4
2X
E3
0.10
5
e
e/2
F
8X
M
MILLIMETERS
MIN
MAX
0.45
0.55
0.00
0.05
0.13 REF
0.20
0.30
4.00 BSC
2.10
2.30
0.90
1.10
4.00 BSC
2.50
2.70
1.00
1.20
0.80 BSC
3.55 BSC
0.30
0.50
0.00
0.15
0.13
0.23
RECOMMENDED
SOLDERING FOOTPRINT*
C A B
4X
NOTE 5
E2
8
DIM
A
A1
A3
b
D
D2
D3
E
E2
E3
e
F
L
L1
L3
A3
DETAIL B
A1
D3
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.25MM FROM TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
5. POSITIONAL TOLERANCE APPLIES TO ALL
OF THE EXPOSED PADS.
L
L3
0.35
2.34
6X
0.60
PACKAGE
OUTLINE
b
0.10
M
C A B
0.05
M
C
4.15 2.74
NOTE 3
BOTTOM VIEW
2X
0.80
0.40
1.14
2X
0.80
1.15
1.24
1
DETAIL C
3.69
DIMENSIONS: MILLIMETERS
DETAIL C
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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6
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Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NMLU1210/D