VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series
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Vishay Semiconductors
Standard Recovery Diodes, 250 A to 320 A
(MAGN-A-PAK Power Modules)
FEATURES
• High voltage
• Electrically isolated base plate
• 3000 VRMS isolating voltage
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
• Designed and qualified for industrial level
MAGN-A-PAK
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
PRODUCT SUMMARY
IF(AV)
250 A to 320 A
Type
Modules - Diode, High Voltage
Package
MAGN-A-PAK
Circuit
Two diodes doubler circuit
This new VS-VSK series of MAGN-A-PAKs uses
high voltage power diodes in two basic configurations. The
semiconductors are electrically isolated from the metal
base, allowing common heatsinks and compact assemblies
to be built. They can be interconnected to form single phase
or three phase bridges and the single diode module can be
used in conjunction with the thyristor modules as a
freewheel diode. These modules are intended for general
purpose applications such as battery chargers, welders and
plating equipment and where high voltage and high current
are required (motor drives, etc.).
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
VSK.250..
VSK.270..
VSK.320..
UNITS
250
270
320
A
100
100
100
°C
393
424
502
50 Hz
7015
8920
10 110
TC
IF(RMS)
IFSM
I2t
I2t
60 Hz
7345
9430
10 580
50 Hz
246
398
511
60 Hz
225
363
466
2460
3980
5110
A
kA2s
kA2s
VRRM
400 to 3000
V
TJ
-40 to +150
°C
Revision: 28-May-14
Document Number: 93581
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VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
04
400
500
VS-VSK.250
VS-VSK.270
VS-VSK.320
VS-VSK.270
08
800
900
12
1200
1300
16
1600
1700
20
2000
2100
30
3000
3100
IRRM MAXIMUM
AT 150 °C
mA
50
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward
current at case temperature
Maximum RMS forward current
Maximum peak, one-cycle
forward, non-repetitive
surge current
IF(AV)
IF(RMS)
IFSM
TEST CONDITIONS
180° conduction, half sine wave
Maximum
for fusing
I2t
320
A
100
100
°C
393
424
502
No voltage
reapplied
7015
8920
10 110
7345
9340
10 580
100 % VRRM
reapplied
5900
7500
8500
6180
7850
8900
246
398
511
225
363
466
174
281
361
159
257
330
t = 0.1 ms to 10 ms, no voltage reapplied
2460
3980
5110
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
I2t
270
100
t = 10 ms
t = 10 ms
I2t
250
As AC switch
t = 8.3 ms
Maximum I2t for fusing
VSK.250 VSK.270 VSK.320 UNITS
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
100 % VRRM
reapplied
Low level value of 
threshold voltage
VF(TO)1
(16.7 % x  x IF(AV) < I <  x IF(AV)), 
TJ = TJ maximum
0.79
0.74
0.69
High level value of
threshold voltage
VF(TO)2
(I >  x IF(AV)), TJ = TJ maximum
0.92
0.87
0.86
Low level forward
slope resistance
rf1
(16.7 % x  x IF(AV) < I <  x IF(AV)), 
TJ = TJ maximum
0.63
0.94
0.59
High level forward
slope resistance
rf2
(I >  x IF(AV)), TJ = TJ maximum
0.49
0.81
0.44
VFM
IFM =  x IF(AV), TJ = TJ maximum, 180° conduction
Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2
1.29
1.48
1.28
SYMBOL
TEST CONDITIONS
Maximum forward voltage drop
A
kA2s
kA2s
V
m
V
BLOCKING
PARAMETER
Maximum peak reverse
leakage current
IRRM
TJ = 150 °C
RMS insulation voltage
VINS
50 Hz, circuit to base, all terminals shorted, t = 1 s
VALUES
UNITS
50
mA
3000
V
Revision: 28-May-14
Document Number: 93581
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series
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Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating and storage
temperature range
VSK.250 VSK.270 VSK.320
TJ, TStg
RthJC
DC operation
Maximum resistance, case to heatsink 
per module
RthCS
Mounting surface flat, smooth and
greased
0.16
busbar to MAP
°C
0.125
K/W
0.035
A mounting compound is recommended
and the torque should be rechecked 
after a period of about 3 hours to allow for
the spread of the compound.
MAP to heatsink
UNITS
-40 to +150
Maximum thermal resistance, 
junction to case per junction
Mounting torque
± 10 %
VALUES
TEST CONDITIONS
4 to 6
Nm
8 to 10
Approximate weight
Case style
800
g
30
oz.
MAGN-A-PAK
R CONDUCTION PER JUNCTION
RECTANGULAR CONDUCTION
AT TJ MAXIMUM
SINUSOIDAL CONDUCTION
AT TJ MAXIMUM
DEVICE
180°
120°
90°
60°
30°
180°
120°
90°
60°
UNITS
30°
VSK.250
0.009
0.010
0.014
0.020
0.032
0.007
0.011
0.015
0.021
0.033
VSK.270
0.008
0.012
0.014
0.020
0.032
0.007
0.011
0.015
0.020
0.033
VSK.320
0.008
0.010
0.013
0.020
0.032
0.007
0.011
0.015
0.020
0.033
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 28-May-14
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VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series
Vishay Semiconductors
VSK.250.. Series
R thJC (DC) = 0.16 K/ W
140
130
Conduction Angle
120
110
100
30°
60°
90
90°
120°
180°
80
0
50
100
150
200
250
300
Maximum Average Forward Power Loss (W)
150
300
180°
120°
90°
60°
30°
250
200
RMSLimit
150
100
Conduc tion Angle
50
VSK.250.. Series
T J = 150°C
0
0
50
100
150
200
250
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - Forward Power Loss Characteristics
VSK.250.. Series
R thJC (DC) = 0.16 K/ W
140
130
120
Conduction Period
110
30°
60°
100
90°
120°
90
180°
DC
80
0
50
450
Maximum Average Forward Power Loss (W)
150
100 150 200 250 300 350 400
DC
180°
120°
90°
60°
30°
400
350
300
250
200 RMSLimit
150
Conduction Period
100
VSK.250.. Series
TJ= 150°C
50
0
0
50
100 150 200 250 300 350 400
Average Forward Current (A)
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 4 - Forward Power Loss Characteristics
600
=
02
0.
W
K/
ta
el
-D
180°
(Sine)
400
A
0.
08
K/
0.
W
12
K/
W
500
S
R th
0.2
K/
W
R
Maximum Tota l Forward Power Loss (W)
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
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300
DC
0.2
5
K/ W
0.4
K/ W
200
VSK.250.. Series
Per Junc tion
TJ = 150°C
100
0.6 K
/
W
0
0
50
100 150 200 250 300 350 400
0
Total RMSOutput Current (A)
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Fig. 5 - Forward Power Loss Characteristics
Revision: 28-May-14
Document Number: 93581
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VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series
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Vishay Semiconductors
A
R t hS
K/ W
.01
=0
K/
W
K/
W
W
K/
800
0.
1
/W
3K
0.0
0.
08
180°
(Sine)
180°
(Rec t)
1000
05
0.
0.1
6K
/W
600
e lt
-D
0.2
5K
/W
aR
Ma ximum Total Power Lo ss (W)
1200
400
2 x VSK.250.. Series
Single Phase Brid ge
Connec ted
TJ = 150°C
200
0.35
K/ W
0
0
100
200
300
400
Total Output Current (A)
0
500
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Fig. 6 - Forward Power Loss Characteristics
3 x VSK.250.. Series
Three Phase Brid ge
Connec ted
TJ = 150°C
400
200
0.1
2
K/
W
0.1
6K
/W
aR
600
K/
W
e lt
-D
800
/W
5K
.00
=0
1000
SA
120°
(Rec t)
R th
1200
K/
W
W
K/
0.
08
W
K/
0.
06
1400
2
0.0
1600
04
0.
Maximum Total Power Loss (W)
1800
0.25
K/ W
0.35 K
/W
0
0
100 200 300 400 500 600 700 800
0
Total Outp ut Current (A)
25
50
75
100
125
150
Maximum Allowab le Ambient Temp era ture (°C)
6500
At Any Ra ted Loa d Cond ition And With
Rated VRRM Ap p lied Following Surge.
Initia l T J = 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
6000
5500
5000
4500
4000
3500
3000
2500
VSK.250.. Series
Per Junc tion
2000
1500
1
10
100
Numb er Of Equal Amplitude Half Cyc le Current Pulses (N)
Fig. 8 - Maximum Non-Repetitive Surge Current
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
Fig. 7 - Forward Power Loss Characteristics
7000
6500
6000
5500
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T J = 150°C
No Voltage Reapp lied
Ra ted V RRM Rea pplied
5000
4500
4000
3500
3000
2500
2000
1500
0.01
VSK.250.. Series
Per Junc tion
0.1
1
Pulse Train Duration (s)
Fig. 9 - Maximum Non-Repetitive Surge Current
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TJ= 25°C
TJ= 150°C
1000
100
VSK.250.. Series
Per Junc tion
Transient Thermal Impedanc e Z thJC (K/ W)
10
0.5
1
1.5
2
2.5
3
3.5
4
150
VSK.270.. Series
R thJC (DC) = 0.125 K/ W
140
130
120
Conduction Period
110
30°
100
90
60°
90°
120°
180°
DC
80
0
100
200
300
400
500
Instantaneous Forward Voltage (V)
Average Forward Current (A)
Fig. 10 - Forward Voltage Drop Characteristics
Fig. 13 - Current Ratings Characteristics
1
Steady State Value:
R thJC = 0.16 K/ W
(DC Operation)
0.1
0.01
VSK.250.. Series
Per Junction
0.001
0.001
0.01
0.1
1
10
100
Maximum Average Forward Power Loss (W)
Instantaneous Forward Current (A)
10000
Maximum Allowable Case Temperature (°C)
Vishay Semiconductors
400
350
180°
120°
90°
60°
30°
300
250
RMS Limit
200
150
Conduc tion Angle
100
VSK.270.. Series
TJ= 150°C
50
0
0
50
100
150
200
250
300
Fig. 11 - Thermal Impedance ZthJC Characteristics
Fig. 14 - Forward Power Loss Characteristics
150
VSK.270.. Series
R thJC (DC) = 0.125 K/ W
140
130
Conduction Angle
120
110
30°
100
60°
90°
90
120°
180°
80
0
50
100
150
200
250
300
Maximum Average Forward Power Loss (W)
Average Forward Current (A)
Maximum Allowable Case Temperature (°C)
Square Wave Pulse Duration (s)
500
DC
180°
400 120°
90°
350
60°
30°
300
450
RMS Limit
250
200
150
Conduction Period
100
VSK.270.. Series
TJ= 150°C
50
0
0
50 100 150 200 250 300 350 400 450
Average Forward Current (A)
Average Forward Current (A)
Fig. 12 - Current Ratings Characteristics
Fig. 15 - Forward Power Loss Characteristics
Revision: 28-May-14
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VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series
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Vishay Semiconductors
W
K/
K/
W
ta
el
-D
0.1
6K
/W
R
180°
(Sine)
400
02
0.
500
K/
W
=
0.
1
SA
th
0.
06
600
R
Maximum Total Forwa rd Power Loss (W)
700
0.2
5
K/
W
0.3
K/ W
DC
300
0. 4
K/ W
200
0.6 K
/
VSK.270.. Series
Per Junc tion
TJ = 150°C
100
W
0
0
50
0
100 150 200 250 300 350 400
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Total RMSOutput Current (A)
Fig. 16 - Forward Power Loss Characteristics
A
thS
=
W
K/
02
0.
ta
el
-D
2 x VSK.270.. Series
Single Phase Bridge
Connec ted
TJ = 150°C
0.25
K/
R
0.1
2K
/W
0.1
6K
/W
600
200
K/
W
0.0
8K
/W
800
400
R
1000
W
K/
180°
(Sine)
180°
(Rec t)
1200
W
K/
0.
06
1400
3
0.
1600
04
0.
Maximum Total Power Loss (W)
1800
W
0.4 K/
W
0.6 K/ W
0
0
100
200
300
400
500
Total Output Current (A)
600
0
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Fig. 17 - Forward Power Loss Characteristics
0.
04
2100
K/
W
02
0.
1800
=
A
hS
R t
0.
06
K/
W
0.1
900
R
120°
(Rec t)
1200
K/
W
0.16
3 x VSK.270.. Series
Three Phase Bridge
Connec ted
T J= 150°C
600
300
ta
el
-D
1500
W
K/
Maximum Total Power Loss (W)
2400
K/ W
0.25
K/ W
0.4 K/
W
0.6 K/ W
0
0
200
400
600
Total Output Current (A)
800
0
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Fig. 18 - Forward Power Loss Characteristics
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Document Number: 93581
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Peak Half Sine Wave Forward Current (A)
8000
At Any Ra ted Load Cond ition And With
Ra ted VRRM Ap plied Following Surge.
Initial T J = 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
7000
6000
5000
4000
3000
VSK.270.. Series
Per Junc tion
2000
1
10
Transient Thermal Impedance Z thJC (K/ W)
Vishay Semiconductors
100
1
Steady State Value:
R thJC = 0.45 K/ W
(DC Operation)
0.1
0.01
VSK.270.. Series
Per Junction
0.001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 19 - Maximum Non-Repetitive Surge Current
Fig. 22 - Thermal Impedance ZthJC Characteristics
Peak Half Sine Wave Forward Current (A)
9000
8000
7000
Ma ximum Non Rep etitive Surge Current
Versus Pulse Train Dura tion.
Initia l TJ = 150°C
No Voltage Reap plied
Rated V RRM Rea p plied
6000
5000
4000
3000
VSK.270.. Series
Per Junction
2000
0.01
0.1
1
Maximum Allowable Case Temp erature (°C)
Numb er Of Equal Amplitude Half Cyc le Current Pulses (N)
150
VSK.320.. Series
R thJC (DC) = 0.125 K/ W
140
130
Conduction Angle
120
110
30°
60°
100
90°
120°
90
180°
80
0
50
100
150
200
250
300
350
Average Forward Current (A)
Fig. 20 - Maximum Non-Repetitive Surge Current
Fig. 23 - Current Ratings Characteristics
Instantaneous Forward Current (A)
10000
TJ= 25°C
TJ= 150°C
1000
100
VSK.270.. Series
Per Junc tion
10
0.5
1
1.5
2
2.5
3
3.5
4
Maximum Allowa ble Case Temperature (°C)
Pulse Train Dura tion (s)
150
VSK.320.. Series
R thJC (DC) = 0.125 K/ W
140
130
120
Conduc tion Period
110
30°
60°
90°
100
120°
180°
90
DC
80
0
100
200
300
400
500
600
Instantaneous Forward Voltage (V)
Average Forward Current (A)
Fig. 21 - Forward Voltage Drop Characteristics
Fig. 24 - Current Ratings Characteristics
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Document Number: 93581
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VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series
Vishay Semiconductors
400
180°
120°
90°
60°
30°
350
300
250
RMSLimit
200
150
Conduction Angle
100
VSK.320.. Series
TJ = 150°C
50
0
0
50
100
150
200
250
300
500
Maximum Average Forward Power Loss (W)
Maximum Average Forward Power Loss (W)
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350
DC
180°
120°
90°
60°
30°
450
400
350
300
250
RMS Limit
200
Conduc tion Period
150
VSK.320.. Series
Per Junction
TJ = 150°C
100
50
0
0
100
Average Forward Current (A)
200
300
400
500
600
Average Forward Current (A)
Fig. 25 - Forward Power Loss Characteristics
Fig. 26 - Forward Power Loss Characteristics
K/
W
W
K/
0.1
6K
/W
0.2
K/
W
ta
el
-D
R
DC
02
0.
400
=
180°
(Sine)
500
K/
W
SA
th
0.
1
W
K/
0.
06
600
R
04
0.
Maximum Total Forward Power Loss (W)
700
0.3
K/ W
0.4
K/ W
300
200
VSK.320.. Series
Per Junc tion
TJ = 150°C
100
0.6
K/ W
0
0
100
200
300
400
Total RMSOutput Current (A)
500
0
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
Fig. 27 - Forward Power Loss Characteristics
50
75
K/
W
a
R
600
elt
-D
0.1
6
W
K/
.02
=0
800
0.
12
K/
W
SA
1000
R th
180°
(Sine)
180°
(Rec t)
/W
3K
0.0
W
K/
04
0.
W
K/
0.
08
1200
06
0.
Maximum Total Power Loss (W)
1400
K/ W
0.25
K/ W
400
2 x VSK.320.. Series
Single Phase Bridge
Connec ted
T J = 150°C
200
0.5 K
/
W
0. 6 K/ W
0
0
100
200
300
400
500
Total Output Current (A)
600
0
25
100
125
150
Maximum Allowable Ambient Temperature (°C)
Fig. 28 - Forward Power Loss Characteristics
Revision: 28-May-14
Document Number: 93581
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series
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Vishay Semiconductors
h
Rt
3 x VSK.320.. Series
Three Phase Bridge
Connected
TJ = 150°C
400
R
0.1
2
800
ta
el
-D
1200
W
K/
120°
(Rec t)
1600
02
0.
0.
04
K/
W
0.
05
K/
W
0.0
6K
/W
0.0
8K
/W
2000
=
W
K/
2400
SA
03
0.
Maximum Total Power Loss (W)
2800
K/ W
0.2 K
/
W
0.3 K/ W
0.6 K/ W
0
0
200
400
600
800
Total Output Current (A)
1000
0
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
10000
At Any Ra ted Load Condition And With
Rated VRRM App lied Following Surge.
Initial TJ = 150°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
9000
8000
7000
6000
5000
4000
VSK.320.. Series
Per Junc tion
3000
10000
Instantaneous Forward Current (A)
Peak Half Sine Wave Forward Current (A)
Fig. 29 - Forward Power Loss Characteristics
10
TJ= 150°C
1000
VSK.320.. Series
Per Junc tion
100
0.5
2000
1
TJ= 25°C
100
9000
8000
Ma ximum Non Rep etitive Surge Current
Versus Pulse Train Dura tion.
Initial TJ = 150°C
No Vo ltage Reap plied
Rated VRRM Reap plied
7000
6000
5000
4000
3000
2000
0.01
VSK.320.. Series
Per Junc tio n
0.1
1
1.5
2
2.5
3
3.5
4
Fig. 32 - Forward Voltage Drop Characteristics
Transient Thermal Impedanc e Z thJC (K/W)
Peak Half Sine Wave Forward Current (A)
Fig. 30 - Maximum Non-Repetitive Surge Current
10000
1
Instantaneous Forward Voltage (V)
Numb er Of Equal Amplitude Half Cyc le Current Pulses (N)
1
Steady State Value:
RthJC = 0.45 K/ W
(DC Operation)
0.1
0.01
VSK.320.. Series
Per Junction
0.001
0.001
0.01
0.1
1
10
100
Pulse Train Dura tion (s)
Square Wave Pulse Duration (s)
Fig. 31 - Maximum Non-Repetitive Surge Current
Fig. 33 - Thermal Impedance ZthJC Characteristics
Revision: 28-May-14
Document Number: 93581
10
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-VS KD
1
2
320
-
3
24
PbF
4
5
1
-
Vishay Semiconductors product
2
-
Circuit configuration (see Circuit Configuration table)
3
-
Current rating: IF(AV) rounded
4
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
5
-
Lead (Pb)-free
CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
VSKD...
Two diodes doubler circuit
-
+
~
KD
-
+
~
VSKC...
+
Two diodes common cathodes
-
-
KC
+
-
-
VSKJ...
Two diodes common anodes
+
+
-
KJ
-
+
+
VSKE...
+
Single diode
-
KE
+
-
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95086
Revision: 28-May-14
Document Number: 93581
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
MAGN-A-PAK
DIMENSIONS in millimeters (inches)
Ø 5.5
35 (1.38)
20 (0.79)
80 (3.15)
50 (1.97)
38 (1.5)
6
(0.24)
3 screws M8 x 1.25
28 (1.12)
6 (0.24)
9 (0.35)
10 (0.39)
HEX 13
52 (2.04)
51 (2.01)
32
(1.26)
115 (4.53)
92 (3.62)
Notes
• Dimensions are nominal
• Full engineering drawings are available on request
• UL identification number for gate and cathode wire: UL 1385
• UL identification number for package: UL 94 V-0
Document Number: 95086
Revision: 03-Aug-07
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
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Disclaimer

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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Revision: 13-Jun-16
1
Document Number: 91000