SANKEN ELECTRIC CO.,LTD
Selection Guide
Diode
The all contents in this document are as of date of publication.
Make sure that this is the latest revision of the document before
use. Please check the details of the product by data sheet.
http://www.sanken-ele.co.jp/en
DITOUSE-SGE
Nov.09,2015
P.1
Diodes by Circuit Types
Diodes are used in peripheral circuit of power supply.
A part of diode lineup is shown below. Please refer to Sanken’s catalog or website for more information.
Power Supply Application
Non-isolated
Buck/Buck-boost Circuit
 Low power application
 For motor control
 Auxiliary power supply
 LED lighting, etc.
Diode Application
AC/DC Convertor
VAC
VOUT
AC/DC Convertor
Snubber Diode (SARS)
P.6
Secondary Rectification Diode
・SBD : VRM = 40 V ~ 150V
・FRD : VRM = 200 V ~ 600 V
P.8
Bootstrap Diode (FRD)
P.14
For PFC
・Bypass Diode (Acceptable large current )
・Rectification Diode (FRD)
P.15
Secondary Rectification Diode
VAC
VOUT
AC/DC
Convertor
Snubber Diode
LLC Circuit
Bootstrap Diode
AC/DC
Convertor
Secondary
Rectification Diode
REG
 High power application
 OA , AV
 Industrial equipment
 LED street light, etc.
VOUT
VS
GND
GND
Power Factor Correction (PFC)
Nov.09,2015
P.3
VOUT
 Low to middle power application
 Adapter
 Auxiliary power supply
 LED lighting, etc.
DITOUSE-SGE
Freewheel Diode (FRD)
VAC
Fly-back Circuit
 Application for 75W or more
 Industrial equipment
 LED lighting, etc.
page
Bypass Diode
Rectification Diode
VAC
VPFCOUT
PFC
Control IC
P.2
Freewheel Diode
For Non-Isolated Buck and Buck-boost Circuit
Since buck and buck boost offline converter IC operates by high frequency, the recovery
characteristic of freewheel diode should be fast. In order to increase the efficiency of circuit, the VF
of the diode should be as low as possible.
The fast recovery diode with low VF for freewheeling is as follows;
Buck circuit
Buck-boost circuit
AC/DC Convertor
AC/DC Convertor
VAC
VAC
VOUT
VOUT
Freewheel Diode
Package
IF
VRM
Features
Link
SMD Type (SJP)
1 A to 3 A
200 V to 600 V
Fast recovery
trr ≤ 50 ns
P.4
Through-hole Type
(Axial, TO220)
1 A to 10 A
500 V to 600 V
Fast recovery
trr ≤ 50 ns
P.5
DITOUSE-SGE
Nov.09,2015
P.3
Freewheel Diode For Non-Isolated Buck and Buck-boost Circuit
Fast Recovery Diode (SMD Type)
Package
 Fast Recovery, trr ≤ 50 ns
SJP
 VRM = 200 V to 600 V
 IF = 1 A to 3 A
VRM
200 V
X/Y/Z
= 4.5 : 2.6 : 2.15
Unit : mm
IF (AVG)
Products
VF (max.)
IF
IF:IR=1:1
25 A
0.98 V
1.0 A
50 ns
25 A
0.98 V
2.0 A
50 ns
SJPL-D2
2.0 A
SJPL-H2
3.0 A
SJPL-L2
60 A
0.98 V
3.0 A
50 ns
1.5 A
SJPL-F4
25 A
1.3 V
1.5 A
50 ns
3.0 A
SJPL-L4
30 A
1.3 V
3.0 A
50 ns
1.0 A
SJPD-D5
20 A
1.4 V
1.0 A
40 ns
50 A
1.4 V
3.0 A
50 ns
30 A
1.5 V
2.0 A
50 ns
SJP
SJP
500 V
DITOUSE-SGE
trr
1.0 A
400 V
600 V
Package
VF
IFSM
50Hz
Half wave
SJP
3.0 A
SJPD-L5
2.0 A
SJPL-H6
Nov.09,2015
SJP
P.4
Freewheel Diode For Non-Isolated Buck and Buck-boost Circuit
Fast Recovery Diode (Through-hole Type)
 Fast Recovery, trr ≤ 50 ns
Package
φ2.4
φ2.7
φ4.0
φ6.5
TO220F-2L
Axial
TO220F-3L
(Center tap)
 VRM = 200 V to 600 V
 IF = 1 A to 10 A
VRM
200 V
400 V
IF (AVG)
1.0 A
2.0 A
3.5 A
1.0 A
1.5 A
2.0 A
5.0 A
10 A
600 V
1.2 A
3.0 A
5.0 A
10 A
DITOUSE-SGE
Products
AL01Z
RL10Z
RL4Z
AL01
EL1
RL2
FML-G14S
FML-24S
FMXA-1104S
RD2A
RL4A
FML-S16S
FMD-G26S
FMXA-1106S
Nov.09,2015
Package
IFSM
50Hz
Half wave
Axial (φ2.4)
Axial (φ4.0)
Axial (φ6.5)
Axial(φ2.4)
Axial(φ2.7)
Axial (φ4.0)
TO-220F-2L
TO-220F-3L
TO-220F-2L
Axial (φ4.0)
Axial (φ6.5)
TO-220F-2L
25 A
30 A
80 A
20 A
40 A
40 A
70 A
70 A
100 A
30 A
80 A
50 A
TO-220F-2L
100 A
VF
trr
VF (max.)
IF
IF：IR=1:1
0.98 V
0.98 V
0.95 V
1.3 V
1.3 V
1.3 V
1.3 V
1.3 V
1.5 V
1.55 V
1.5 V
1.7 V
1.7 V
1.98 V
1.0 A
2.0 A
3.5 A
1.0 A
1.5 A
2.0 A
5.0 A
5.0 A
10 A
1.2 A
3.0 A
5.0 A
10 A
10 A
50 ns
50 ns
50 ns
50 ns
50 ns
50 ns
50 ns
50 ns
25 ns
50 ns
50 ns
50 ns
50 ns
28 ns
P.5
SARS Diode for Snubber Circuit
Using FLR Diode
Using SARS
Snubber
Snubber
VAC
VAC
Discharge Loop
SARS
Discharge Loop
Surge Absorb Loop
Surge Absorb Loop
Power Supply
Control IC
Power Supply
Control IC
Controller
Controller
VDS
When MOSFET turns off, surge current flows on “Surge
Absorb Loop” and It is absorbed by capacitor.
The electrical charge of capacitor is discharged
through ”Discharge Loop”. The power is not transferred to
the secondary side. Thus it becomes power dissipation.
When this capacitor is discharged, the recovery current of
the diode flows on the MOSFET. FLR (Fast Recovery Diode)
is beneficial for preventing the MOSFET damage.
DITOUSE-SGE
Nov.09,2015
VDS
When SARS is used, the electrical charge of the capacitor
is discharged through ”Discharge Loop” in recovery period
of SARS and this power is transferred to the secondary
side. Thus high circuit efficiency can be achieved.
When this capacitor is discharged, the instantaneous
recovery current of the diode flows on the MOSFET. It is
recommended to add a resistor in series with SARS for the
damage control of MOSFET. (Patented circuit)
P.6
Low Noise, Improve Circuit Efficiency
SARS, Diode for Snubber Circuit
Package
SJP
TO-220F-2L
X/Y/Z
= 4.5 : 2.6 : 2.15
Unit : mm
Axial - φ2.7 mm / φ0.60 mm
 Low noise;
Prevention of ringing at Power MOSFET turn-off
 PCB area saving;
Reducing number of filter circuit components
Axial - φ4.0 mm / φ0.78 mm
 Improve circuit efficiency
VF
IF (AVG)
IFSM
50Hz
Half-wave
VF
(max.)
800 V
1.2 A
110 A
SARS02
800 V
1.5 A
SARS05
800 V
Built-in
resistance(22Ω)
SARS10
800 V
DITOUSE-SGE
Nov.09,2015
Type
External
resistance
Part
Number
VRM
SARS01
IF
trr
IF：IR=1：1
Package
0.92 V
1.2 A
2 to 18 μs
Axial - φ2.7 / φ0.60
100 A
0.92 V
1.5 A
2 to 18 μs
Axial - φ4.0 / φ0.78
1.0 A
30 A
1.05 V
1.0 A
2 to 18 μs
SJP (SMA:4.5 x 2.6)
0.3 A
1.5 A
13 V
0.5 A
1 to 9 μs
TO220F-2L
P.7
Diode for Secondary Rectification
The forward current for charging Secondary Electrical capacitor and the recovery current flow to the secondary
rectification diode.
In order to improve the efficiency of circuit, the diode should be as low VF and fast recovery as possible.
 Half bridge Type
 Flyback Type
DC input
VAC
Secondary Rectification Diode
VOUT
VB
REG
Secondary Rectification Diode
LLC control IC
AC/DC convertor IC
VOUT
VS
Cont.
GND
GND
VRM
Diode
IF(AVG)
VF
trr
Link
40 V, 60 V
Schottky
10 A to 30 A
≤ 0.7 V
－
P.9
80 V, 100V, 150 V
Schottky
10 A to 30 A
≤ 0.92 V
－
P.10
200 V, 300 V
Fast Recovery
10 A to 20 A
≤ 1.3 V
17 ns to 40 ns
P.11
400 V, 600 V
Fast Recovery
10 A to 20 A
≤ 1.98 V
25 ns to 50 ns
P.12
650 V
SiC
10 A to 20 A
≤ 1.75 V
－
P.13
DITOUSE-SGE
Nov.09,2015
P.8
Secondary-side Rectification Diode
Schottky Diode, VRM ≥ 40 V
TO-220F-3L
 Low VF ≤ 0.7 V
TO-3PF-3L
 VRM = 40 V ~ 60 V
VRM
IF (AVG)
Package
5Ax2
40 V
7.5 A x 2
TO-220F-3L
10 A x 2
15 A x 2
TO-3PF-3L
5Ax2
60 V
7.5 A x 2
10 A x 2
15 A x 2
DITOUSE-SGE
TO-220F-3L
Nov.09,2015
TO-3PF-3L
VF
Part Number
IFSM
50Hz
Half wave
VF (max.)
IF
FMW-24L
100 A
0.55 V
5A
FMW-24H
120 A
0.55 V
7.5 A
FMW-2204
150 A
0.55 V
10 A
FMW-4304
150 A
0.55 V
15 A
FMW-2106
100 A
0.70 V
5A
FMW-2156
100 A
0.70 V
7.5 A
FMW-2206
120 A
0.70 V
10 A
FMW-4306
150 A
0.70 V
15 A
P.9
Secondary-side Rectification Diode
Schottky Diode, VRM ≥ 80 V
TO-220F-3L
TO-3PF-3L
 Low VF ≤ 0.92 V
 VRM = 80 V ~ 150 V
VRM
80 V
100 V
Part Number
VF (max.)
IF
FMEN-2208
120 A
0.76 V
10 A
FMEN-2308
150 A
0.765 V
15 A
5Ax2
FMEN-210A
100 A
0.85 V
5.0 A
7.5 A x 2
FMEN-215A
100 A
0.85 V
7.5 A
FMEN-220A
120 A
0.85 V
10 A
FMEN-230A
150 A
0.85 V
15 A
FMEN-430A
150 A
0.85 V
15 A
FMEN-210B
100 A
0.92 V
5.0 A
FMEN-220B
120 A
0.92 V
10 A
IF (AVG)
10 A x 2
15 A x 2
10 A x 2
Package
TO-220F-3L
TO-220F-3L
15 A x 2
15 A x 2
150 V
DITOUSE-SGE
VF
IFSM
50Hz
Half wave
5Ax2
10 A x 2
Nov.09,2015
TO-3PF-3L
TO-220F-3L
P.10
Secondary-side Rectification Diode
Fast Recovery Diode, trr ≤ 40 ns VRM ≥ 200 V
 Fast Recovery , trr = 17 ns ~ 40 ns
 Low VF ≤ 1.3 V
 VRM = 200 V ~ 300 V
VRM
TO-220F-2L
IF (AVG)
Package
10 A
TO-220F-2L
5Ax2
200 V
5Ax2
7.5 A x 2
TO-220F-3L
10 A x 2
10 A x 2
TO-3PF-3L
5Ax2
300 V
7.5 A x 2
TO-220F-3L
10 A x 2
10 A x 2
DITOUSE-SGE
TO-3PF-3L
Nov.09,2015
TO-220F-3L
TO-3PF-3L
Part Number
IFSM
50Hz
Half wave
VF
VF (max.)
IF
trr
IF：IR=1：1
FMX-G22S
150 A
0.98 V
10 A
30 ns
FML-G22S
150 A
0.98 V
10 A
40 ns
FMX-12SL
65 A
1.25 V
5A
30 ns
FMXA-2102ST
100 A
1.20 V
5A
25 ns
FMX-22SL
100 A
0.98 V
7.5 A
30 ns
FMXA-2202S
100 A
1.20 V
10 A
25 ns
FMXS-4202S
150 A
1.05 V
10 A
30 ns
FMX-23S
65 A
1.30 V
5A
30 ns
FMXA-2153S
75 A
1.28 V
7.5 A
17 ns
FMXA-2203S
100 A
1.30 V
10 A
25 ns
FMXA-4203S
100 A
1.30 V
10 A
25 ns
P.11
Secondary-side Rectification Diode
Fast Recovery Diode, trr ≤ 50 ns VRM ≥ 400 V
 Fast Recovery , trr = 25 ns ~ 50 ns
 Low VF ≤ 1.98 V
 VRM = 400 V ~ 600 V
TO-220F-3L
TO-3PF-3L
IF (AVG)
Package
Part Number
IFSM
50Hz
Half wave
10 A
TO-220F-2L
FMXA-1104S
100 A
1.50 V
10 A
25 ns
10 A x 2
TO-220F-3L
FML-24S
70 A
1.30 V
5A
50 ns
FMD-G26S
100 A
1.7 V
10 A
50 ns
FMX-1106S
50 A
1.6 V
10 A
30 ns
FMXA-1106S
100 A
1.98 V
10 A
28 ns
FMXK-1106S
100 A
1.75 V
10 A
27 ns
FMXS-1206S
180 A
1.6V
20A
35ns
FMXS-2206S
100 A
1.6 V
10 A
30 ns
FMXK-2206S
100 A
1.75 V
10 A
27 ns
FMD-4206S
100 A
1.7 V
10 A
50 ns
VRM
400 V
TO-220F-2L
10 A
600 V
TO-220F-2L
20A
10 A x 2
TO-220F-3L
10 A x 2
TO-3PF-3L
DITOUSE-SGE
Nov.09,2015
VF
VF (max.)
IF
trr
IF：IR=1：1
P.12
Secondary-side Rectification Diode
SiC Diode, VRM = 650 V
 High voltage Schottky Diode
 Low VF ≤ 1.75 V
 VRM = 650 V
TO-220F-3L
IF (AVG)
Package
Part Number
IFSM
50Hz
Half wave
10 A
TO-220F-2L
FMCA-11065
40 A
1.75 V
10 A
－
10 A x 2
TO-220F-3L
FMCA-22065
40 A
1.75 V
10 A
－
VRM
650 V
TO-220F-2L
DITOUSE-SGE
Nov.09,2015
VF
VF (max.)
IF
trr
IF：IR=1：1
P.13
Bootstrap Diode
Bootstrap Diode is used for high-side driver of power supply circuit.
Since the recovery current flows on the diode depending on the switching frequency of the driver, it is recommended to use a diode with fast
recovery characteristic.
For the bootstrap diode selection, the applied voltage of Power MOSFET and the high-side sink current need to be considered.
DC input
Bootstrap Diode
SJP
X/Y/Z
= 4.5 : 2.6 : 2.15
VB
REG
LLC control IC
Axial
Φ2.4
/φ0.6
Axial
Φ4.0
/φ0.78
Axial
Φ2.7
/φ0.78
Axial
Φ4.0
/φ0.98
X
VOUT
VS
Y
GND
Z
Unit : mm
VRM
600 V
800 V
DITOUSE-SGE
パッケージ
Part Number
IFSM
50Hz Half wave
VF (max.)
(IF=IF (AV))
trr
IF：IR=1：1
2.0 A
SJP
SJPL-H6
30 A
1.5 V
50 ns
2.0 A
SJP
SJPX-H6
20 A
1.5 V
30 ns
0.5 A
Axial φ2.4/φ0.6
AG01A
15 A
1.8 V
100 ns
0.6 A
Axial φ2.7/φ0.78
EG1A
10 A
2.0 V
100 ns
1.0 A
Axial φ4.0/φ0.78
RG10A
50 A
2.0 V
100 ns
1.2 A
Axial φ4.0/φ0.98
RD2A
30 A
1.55 V
50 ns
0.5 A
Axial φ2.4/φ0.6
AB01B
10 A
2.0 V
200 ns
IF
(AV)
Nov.09,2015
P.14
Diode for PFC
PFC circuit consists of a Bypass Diode and a Rectification Diode.
Each diode needs to be selected according to their use.
Bypass Diode
VAC
Points of selection for Bypass Diode→P.16
Rectification Diode
Points of selection for Rectification Diode →P.17
VPFCOUT
PFC
Control IC
GND
Operation Mode
Bypass Diode
Features
Link
High Power, IFSM > 50A
Low VF ≤ 0.95V
P.18
DCM
CRM
Low VF ≤ 1.3V
P.19
CCM
• Fast recovery diode, trr ≤ 50ns
• SiC Diode
P.20
―
Rectification Diode
DITOUSE-SGE
Nov.09,2015
P.15
Points of Selection for Bypass Diode
1. Functions of Bypass Diode
 For Protecting MOSFET and Rectification Diode from
Inrush Current
When the inductance is saturated by the inrush current,
large current flows to the rectification diode, the diode
has a risk of breakdown.
Since saturation of inductance is prevented by flowing
inrush current to the bypass diode, MOSFET and
rectification diode are protected.
Bypass Diode
VPFCOUT
VAC
Rectification
Diode
PFC
Control IC
GND
 For protecting Bridge Diode from Lightning Surge
If the lightning surge is injected to the circuit, bridge
diode has a risk of breakdown. Thus, the bypass diode
changes the energy of the lightning surge flow and it is
absorbed by electrolytic capacitor.
2. Electrical Characteristics of Bypass Diode
In order to change flow of the inrush current and the lightning surge to the bypass diode, VF of Bypass diode needs
to be lower than VF of rectification diode.
When output voltage becomes higher than input voltage, the bypass diode turns off. Thus recovery characteristic of
the diode is not considered. The pulse current and VF characteristic needs to be considered for the diode selection.
Key points of Bypass Diode selection;
1) Acceptable large current in short period (IFSM > 50A)
2) Low VF than rectification diode (VF ≤ 0.95V)
DITOUSE-SGE
Nov.09,2015
P.16
Point of Selection for Rectification Diode
The Rectification Diode of PFC should be selected according to the operation mode of PFC
Discontinuous Conduction
Mode (DCM)
Features
 There is a period when the
current that runs through L
becomes zero
(Frequency is fixed)
 L value: Small
IL
Advantages
Critical Conduction Mode
(CRM)
Continuous Conduction Mode
(CCM)
 The current that runs through L
becomes zero for an instant
(ON time is fixed)
 The current that runs through L
does not become zero
(Frequency is fixed)
 L value: Medium
 L value: Large
IL
 MOSFET turns ON when the current that runs through a diode
becomes zero
・There is almost no recovery current in the rectifier diode
・Switching noise is small
IL
 Peak current of MOSFET is small
 Ripple of input current is small
 Normal mode noise is small
 With almost no recovery current, better efficiency is achieved
when focusing on VF
 Peak current of MOSFET is large
Disadvantages
 Ripple of input current is large
 Normal mode noise is large
Key points in selecting a rectifier diode ;
・DCM, CRM: Low VF Diode (VF ≤ 1.3V)
・CCM: Fast Recovery Diode (trr ≤ 50 ns) with Low VF
DITOUSE-SGE
Nov.09,2015
 MOSFET turns ON when the
current runs through the diode
・Recovery current runs through
the rectifier diode, resulting in
large loss
・Switching noise is large
 To reduce loss, use a diode with
excellent reverse recovery time
(trr)
P.17
Bypass Diode for PFC
VF ≤ 0.95 V, VRM = 600 V
Axial-φ2.7mm/φ0.78mm
φ6.5mm/φ1.4mm
φ4.0mm/φ0.78mm
 Low VF = 0.95 V(max.)
 VRM = 600 V
VRM
600 V
VF (max.)
IF
IR/H.IR
(VR=VRM)
VF
IF (AVG)
Package
1.0 A
Axial φ2.7
EM2A
80 A
0.92 V
1.2 A
10 μA / 50 μA
1.2 A
Axial φ4.0
RM 11A
100 A
0.92 V
1.5 A
10 μA / 50 μA
1.2 A
Axial φ4.0
RM 10A
150 A
0.91 V
1.5 A
10 μA / 50 μA
1.7 A
Axial φ6.5
RM 4A
200 A
0.95 V
3.0 A
10 μA / 50 μA
1.8 A
Axial φ6.5
RM 4AM
350 A
0.92 V
3.5 A
10 μA / 50 μA
DITOUSE-SGE
Nov.09,2015
Part Number
IFSM
10ms
Half wave
P.18
Rectification Diode for DCM and CRM PFC
VF ≤ 1.3 V, VRM = 600 V




For DCM and CRM
Low VF = 1.30 V(max.)
VRM = 600 V
trr ≤ 200 ns
VRM
IF (AVG)
3.0 A
600 V
Package
Axial φ6.5
TO-220F-2L TO-220F-3L
Part
Number
TO-3PF-2L
VF
VF (max.)
IF
TO-3PF-3L
TO-3P-3L
TO-247-3L
IFSM
50Hz Half wave
trr
IF：IR=1：1
Axial (φ6.5/φ1.4)
RY2A
1.15 V
3.0 A
50 A
200 ns
Axial (φ6.5/φ1.4)
RN4A
1.30 V
3.0 A
50 A
100 ns
5.0 A
TO-220F-2L
FMN-1056S
1.30 V
5.0 A
60 A
100 ns
10 A
TO-220F-2L
FMNS-1106S
1.30 V
10 A
100 A
100 ns
15 A
TO-220F-2L
FMN-1156S
1.30 V
15 A
150 A
100 ns
20 A
TO-220F-2L
FMN-1206S
1.30 V
20 A
150 A
150 ns
30 A
TO-3PF-2L
FMN-3306S
1.30 V
30 A
150 A
200 ns
10 A x 2
TO-220F-3L
FMN-2206S
1.30 V
10 A
150 A
100 ns
TO-3PF-3L
FMN-4306S
1.30 V
15 A
150 A
150 ns
TO-3P-3L
CTNS-4306S
1.30 V
15 A
150 A
100 ns
TO-3P-3L
CTNS-4606S
1.30 V
30 A
150 A
150 ns
15 A x 2
30 A x 2
DITOUSE-SGE
Nov.09,2015
P.19
Rectification Diode for CCM PFC, Fast Recovery Diode
trr ≤ 50 ns, VRM = 600 V
 For CCM
 Fast Recovery Diode
trr = 50 ns (max.)
VRM = 600 V, IF = 1.2 A to 20 A
 SiC Diode
VRM = 650 V , IF = 10 A to 20 A
VRM
600 V
TO-220F-2L
VF
TO-220F-3L
TO-3PF-3L
TO-3P-3L
VF (max.)
IF
RD2A
1.55 V
1.2 A
30 A
50 ns
RL4A
1.5 V
3.0 A
80 A
50 ns
TO-220F-2L
FMX-G16S
1.5 V
5A
50 A
30 ns
8.0 A
TO-220F-2L
FMXK-1086S
1.75 V
8A
100 A
27 ns
10 A
TO-220F-2L
FMXA-1106S
1.98 V
10 A
100 A
28 ns
FMX-1106S
1.60 V
10 A
100 A
30 ns
20 A
TO-220F-2L
FMXS-1206S
1.60 V
20 A
100 A
35 ns
FMXK-2206S
1.75 V
10 A
100 A
27 ns
FMXS-2206S
1.60 V
10 A
100 A
30 ns
TO-3PF-3L
FMD-4206S
1.70 V
10 A
100 A
50 ns
30 A x 2
TO-3P-3L
CTXS-4606S
1.70 V
30 A
150 A
35 ns
10 A
TO-220F-2L
FMCA-11065
1.75 V
10A
40 A
- (SiC)
10 A x 2
TO-220F-3L
FMCA-22065
1.75 V
10A
40 A
- (SiC)
Package
1.2 A
Axial (φ4.0/φ0.78)
3.0 A
Axial (φ6.5/φ1.4)
5.0 A
DITOUSE-SGE
TO-220F-3L
Nov.09,2015
Part
Number
Axial φ6.5
IFSM
50Hz Half wave
IF (AVG)
10 A x 2
650 V
Axial φ4.0
trr
IF：IR=1：1
P.20
IMPORTANT NOTES

The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this
is the latest revision of the document before use.

Application examples, operation examples and recommended examples described in this document are quoted for the sole
purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of
industrial property rights, intellectual property rights, life, body, property or any other rights of Sanken or any third party which
may result from its use.

Unless otherwise agreed in writing by Sanken, Sanken makes no warranties of any kind, whether express or implied, as to the
products, including product merchantability, and fitness for a particular purpose and special environment, and the information,
including its accuracy, usefulness, and reliability, included in this document.

Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of
semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk,
preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to
the society due to device failure or malfunction.

Sanken products listed in this document are designed and intended for the use as components in general purpose electronic
equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.).
When considering the use of Sanken products in the applications where higher reliability is required (transportation equipment
and its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various safety devices, etc.), and
whenever long life expectancy is required even in general purpose electronic equipment or apparatus, please contact your
nearest Sanken sales representative to discuss, prior to the use of the products herein.
The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required
(aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited.

When using the products specified herein by either (i) combining other products or materials therewith or (ii) physically,
chemically or otherwise processing or treating the products, please duly consider all possible risks that may result from all such
uses in advance and proceed therewith at your own responsibility.

Anti radioactive ray design is not considered for the products listed herein.

Sanken assumes no responsibility for any troubles, such as dropping products caused during transportation out of Sanken’s
distribution network.

The contents in this document must not be transcribed or copied without Sanken’s written consent.
DITOUSE-SGE
Nov.09,2015
P.21