GaAs MMIC Power Amplifier

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AM08011039WM-00
AM08011039WM-SN-R
July 2012
Rev 0
GaAs MMIC
Power Amplifier
DESCRIPTION
AMCOM’s AM08011039WM-00 (SN-R) is a broadband GaAs MMIC power amplifier. It has 25dB small signal gain,
and >40dBm output power over the 8 to 11GHz band at 8V bias. The AM08011039WM-00 is an un-packaged bare
die. Because of high DC power dissipation, we strongly recommend to mount these devices with eutectic bonding
directly on a copper heat sink. It is capable of working at 8V DC bias voltage under pulsed condition if the eutectic
bonding does not have any voids. Otherwise, we recommend operating the MMIC at 7V DC bias to provide some
thermal margin. The AM08011039WM-SN-R is in a ceramic package with a flange and straight RF and DC leads for
drop-in applications. Good heat sinking is required. Both chip and packaged versions are RoHS compliant.
FEATURES
APPLICATIONS
•
Wide bandwidth from 8 to 11GHz
•
Fixed microwave backhaul
•
40dBm of saturated output pulsed power
•
Radar
•
High gain, 28dB
•
Satellite communications
•
Input /Output matched to 50 Ohms
•
2-way radio
TYPICAL PERFORMANCE * ( Vds = +8V (1mS, 5% duty), Idsq = 3900mA, Vgg = -1.8V**)
Parameters
Frequency
Small Signal Gain
Gain Ripple
P1dB ***
Psat ***
Efficiency @ P1dB
Noise Figure
IP3 @ 10GHz
Input Return Loss
Output Return Loss
Thermal Resistance
Minimum
8.5 – 10.5GHz
36dBm
38dBm
Typical **
8 – 11GHz
25dB
± 2dB
39dBm
40dBm
20%
46dBm
12dB
5dB
3°C/W
Maximum
30dB
± 3.0dB
10dB
*
Specifications subject to change without notice.
**
Current may change from lot to lot. Adjust Vgs to reach Idsq1=300mA, Idsq2=1.2A, Idsq3=2.4A. Vds of 8V is at the
MMIC drain terminal. Because Ids is around 4 Amp, if your test system has a 0.1-ohm resistance between the DC
power supply and the MMIC drain, it will have a drop of 0.4V, which reduces output power. In this case, we
recommend raising the DC power supply voltage to 8.4V.
*** Power data are pulsed results for 5% pulse duty cycle and 1mS pulse width.
Email: info@amcomusa.com
Website: www.amcomusa.com
Tel. (301) 353-8400 Fax. (301) 353-8401
401 Professional Drive, Gaithersburg, MD 20879
AM08011039WM-00
AM08011039WM-SN-R
AMCOM Communications, Inc.
July 2012, Rev 0
ABSOLUTE MAXIMUM RATING
Parameters
Symbol
Rating
Drain source voltage
Vds1 , Vds2 , Vds3
9V
Gate source voltage
Vgg
-3V
Drain source current
Idsq1
Idsq2
Idsq3
Pt
Tch
Top
Tsto
0.35A
Drain source current
Drain source current
Continuous dissipation at 25ºC
Channel temperature
Operating temperature
Storage temperature
1.5A
3.6A
40W
175°C
-55°C to +85°C
-55°C to +135°C
SMALL SIGNAL DATA*
Package Performance
25
Gain
20
15
10
5
0
Output RL
-5
-10
-15
Chip Performance
30
Gain & Return Losses (dB)
Gain & Return Losses (dB)
30
Input RL
-20
25
Gain
20
15
10
5
0
Output RL
-5
-10
-15
Input RL
-20
6
7
8
9
10
11
Frequency (GHz)
12
13
14
6
7
8
9
10
11
12
13
14
Frequency (GHz)
* MMIC could be operated at lower than Vds=+8V with almost same small signal parameters.
Email: info@amcomusa.com
Website: www.amcomusa.com
Tel. (301) 353-8400 Fax. (301) 353-8401
401 Professional Drive, Gaithersburg, MD 20879
AM08011039WM-00
AM08011039WM-SN-R
AMCOM Communications, Inc.
July 2012, Rev 0
POWER DATA (Vd =8V, Vg = -1.8V, Idsq1=300mA, Idsq2=1.2A, Idsq3=2.4A, 1mS, 5% duty) *
Chip P1dB
Chip P3dB
45
44
44
43
43
Power (dBm)
Power (dBm)
45
42
41
40
39
38
42
41
40
39
38
37
37
36
36
35
35
7
8
9
10
11
12
7
8
Frequency (GHz)
Package P1dB
10
11
12
11
12
Package P3dB
45
44
44
43
43
Power (dBm)
Power (dBm)
45
9
Frequency (GHz)
42
41
40
39
38
42
41
40
39
38
37
37
36
36
35
35
7
8
9
10
Frequency (GHz)
11
12
7
8
9
10
Frequency (GHz)
* MMIC could be operated from 5 to 8V. All power data is pulsed with 5% duty cycle and 1000 cycles per second.
Email: info@amcomusa.com
Website: www.amcomusa.com
Tel. (301) 353-8400 Fax. (301) 353-8401
401 Professional Drive, Gaithersburg, MD 20879
AM08011039WM-00
AM08011039WM-SN-R
AMCOM Communications, Inc.
July 2012, Rev 0
CHIP OUTLINE (X*Y Dimensions 4378x4108 um2)
Pin No.
1
2
3
4
5
6
7
8
9
10
Function
Vgg
Vds1
Vds2
Vds3
RF out
Vds3
Vds2
Vds1
Vgg
RF in
Bias
-1.8V
+8V
+8V
+8V
NA
+8V
+8V
+8V
-1.8V
NA
* It is important to connect Vds to both the upper and lower bonding pads, such as #4 and #6 for Vd3, #3 and #7 for Vd2
** Gate biases are for reference only and may vary from lot to lot.
Email: info@amcomusa.com
Website: www.amcomusa.com
Tel. (301) 353-8400 Fax. (301) 353-8401
401 Professional Drive, Gaithersburg, MD 20879
AM08011039WM-00
AM08011039WM-SN-R
AMCOM Communications, Inc.
July 2012, Rev 0
CHIP TEST FIXTURE
Important Notes:
1- Recommended current biases are 0.3A , 1.2A and 2.4A for the first stage , second and third stage
respectively. Gate bias of -1.8V is for reference only. Vgg could be adjusted to vary the currents going thru
the MMIC.
2- Do not apply Vds1 &, V ds2 & Vds3 without proper negative voltages.
3- The currents flowing out of the two Vgg pins are around 300mA.
Email: info@amcomusa.com
Website: www.amcomusa.com
Tel. (301) 353-8400 Fax. (301) 353-8401
401 Professional Drive, Gaithersburg, MD 20879
AM08011039WM-00
AM08011039WM-SN-R
AMCOM Communications, Inc.
July 2012, Rev 0
SN PACKAGE OUTLINE
Pin Layout
Pin No.
1
2
3
4
5
6
7
8
9
10
Email: info@amcomusa.com
Website: www.amcomusa.com
Function
Vds1
Vgg
RF in
Vgg
Vds1
Vds2
Vds3
RF out
Vds3
Vds2
Bias
+8V
-1.8V
NA
-1.8V
+8V
+8V
+8V
NA
+8V
+8V
Tel. (301) 353-8400 Fax. (301) 353-8401
401 Professional Drive, Gaithersburg, MD 20879
AM08011039WM-00
AM08011039WM-SN-R
AMCOM Communications, Inc.
July 2012, Rev 0
TEST CIRCUIT for SN Package
Important Notes:
4- Recommended current biases are 0.3A , 1.2A and 2.4A for the first stage , second and third stage
respectively. Gate bias of -1.8V is for reference only. Vgg could be adjusted to vary the currents going thru
the MMIC.
5- Do not apply Vds1 &, V ds2 & Vds3 without proper negative voltages.
6- The currents flowing out of the two Vgg pins are around 300mA.
Email: info@amcomusa.com
Website: www.amcomusa.com
Tel. (301) 353-8400 Fax. (301) 353-8401
401 Professional Drive, Gaithersburg, MD 20879
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