Yang Yong Chen www.company.com
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Yang Yong Chen
Outline
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Introduction
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Experiment
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Experimental Details
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Conclusion
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Introduction
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NOWADAYS, GaN-based LEDs on sapphire and SiC substrates have been commercially available in arious applications, owing to the rapid development of the
LED technologies.
•
Although GaN-based LEDs on Si substrates have been extensively studied and their performances have been improved greatly, the volume production remains difficult mainly due to the much lower light efficiency of LEDs on Si substrates.
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Among those problems, the optical absorption by opaque Si substrates is an important one.
• In this paper, crack-free InGaN/GaN MQW LEDs were transferred from Si (111) substrate onto electroplating Cu submount,with a 5 TiO /SiO –Al
ODR. Besides the high reflectivity of the 5 TiO /SiO
ODR, the Al mirror further increased the reflectivity and broadened the reflectance andwidth. The Cu submount also exhibited better thermal conductivity, which is beneficial to the electrical and optical properties of LEDs.
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