Enhancement in the photocurrent response of N-doped TiO

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Enhancement in the photocurrent response of N-doped TiO2
films using glancing angle deposited porous underlayers
Chun-Te Lee (李 俊 德 ) †, Hsyi-En Cheng (鄭 錫 恩 ‡) ‡
Department of Electro-Optical engineering, Southern Taiwan University,
Tainan, Taiwan
(NSC-96-2628-E-218-001-MY3)
Abstract
In this study, the effects of porous underlayers on the photocurrents of coated
N-doped TiO2 films were investigated. The porous underlayers were prepared by
glancing angle deposition (GLAD) on irregular arrays of copper and nickel
nanoparticles, respectively, on ITO glass substrates. N-doped TiO2 films were then
grown on the prepared porous underlayers by atomic layer deposition. The
morphologies and porosity of underlayers were characterized by a scanning electron
microscopy. The photocurrent response properties of N-doped TiO2 films at various
wavelengths were examined in a wet-type three-electrode cell using a potentiostat
system. The results show that the photocurrent response of N-doped TiO2 films in
visible light was significantly improved by the GLAD underlayers.
Keywords: Photocurrent, porous structure, glancing angle deposition, atomic layer
deposition
†
Presenter: Chun-Te Lee
‡
Corresponding author: Hsyi-En Cheng, E-mail: sean@mail.stut.edu.tw
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