Carrier Action: Motion, Recombination and Generation. What happens after we figure out how many electrons and holes are in the semiconductor? 1 Carrier Motion I Described by 2 concepts: • Conductivity: s (or resistivity: r = 1/s) • Mobility: m Zero Field movement: Random – over all Thermal – Energy Distribution. Motion e- Electrons are scattered by impurities, defects etc. What happens when you apply a force? 2 Carrier Motion II Apply a force: F = qE = qEx xˆ Electrons accelerate: -n0qEx=dpx/dt {from F=ma=d(mv)/dt} Electrons decelerate too. • Approximated as a viscous damping force (much like wind on your hand when driving) dpx = -px dt/t {dt = time since last “randomizing collision” and t = mean free time between randomizing collisions.} Net result: deceration = dpx/dt = -px/t 3 Carrier Motion III Acceleration=Deceleration in steady state. • dpx/dt(accel) + dpx/dt(decel) = 0 • -n0qEx - px/t = 0. Algebra: • px/n0 = -qtEx = <px> • But qt v = E mn Ex • <px> = mn*<vx> Therefore: x * x mn = qt mn* , mp = qt mn m*p 4 Currents “Current density” (J) is just the amount of charge passing through a unit area per unit time. Jx = (-q)(n0)<vx> in C/(s m2) or A/m2 = +(qn0mn)Ex for e-’s acting alone. = sn Ex (defining e- conductivity) If both electrons and holes are present: J = q(no mn po m p ) E = sE = E r 5 Current, Resistance How do we find: • current (I)? We integrate J. I= J dydz y = 0 to w z = 0 to t x • resistance (R)? L r ( x ) dx R = w( x ) t ( x ) = 0 t rL wt = s1 wtL L V w • Provided r, w, t are all constants along the x-axis. 6 Mobility changes … Although it is far too simplistic we use: t is the “mean free time.” mn = qt/mn* mn* is the “effective mass.” (depends on material) t depends upon: • # of scatter centers (impurities, defects etc.) More doping => lower mobility (see Fig. in books) More defects (worse crystal) => smaller mobility too. • The lattice temperature (vibrations) Increased temp => more lattice movement => more scattering => m smaller t and smaller m. Increasing Doping 7 Mobility Changes II Mobility is also a function of the electric field strength (Ex) when Ex becomes large. (This leads to an effect called “velocity saturation.”) <vx> Here m is constant (low fields). Note constant m => linear plot. Vsat 107 cm/s At ~107 cm/s, the carrier KE becomes the same order of magnitude as kBT. Therefore: added energy tends to warm up the lattice rather than speed up the carrier from here on out. The velocity becomes constant, it “saturates.” Ex (V/cm) 106 cm/s 105 cm/s 102 103 104 105 106 8 What does Ex do to our Energy Band Diagram? Drift currents depend upon the electric field. What does an electric field do to our energy band diagrams? It “bends” them or causes slope in EC, EV and Ei. We can show this. E • Note: Eelectron = Total E = PE + KE How much is PE vs. KE??? electron e- Eg EC EV h+ 9 Energy Band Diagrams in electric fields EC is the lower edge for potential energy (the energy required to break an electron out of a bonding state.) Everything above EC is KE then. PE always has to have a Eelectron reference! We’ll choose eKE one arbitrarily for the EC = PE Eg moment. (EREF = Constant) EV = PE PE Then PE = EC-EREF KE h+ We also know: PE=-qV E REF 10 Energy Band Diagrams in electric fields II Electric fields and voltages are related by: E = -V (or in 1-D E=-dV/dx) • So: PE = EC-EREF = -qV or V = -(EC-EREF)/q • Ex = -dV/dx = -d/dx{-(EC-EREF)/q} or Ex = +(1/q) dEC/dx 1 dEC 1 E = q EC or E x = q dx 1 dEV 1 E = q EV or E x = q dx 1 dEi 1 E = q Ei or E x = q dx 11 Energy Band Diagrams in electric fields III The Electric Field always points into the rise in the Conduction Band, EC. Eelectron Ex EC Ei Eg EV EREF What about the Fermi level? What happens to it due to the Electric Field? 12 Another Fermi-Level Definition The Fermi level is a measure of the average energy or “electro-chemical potential energy” of the particles in the semiconductor. THEREFORE: The FERMI ENERGY has to be a constant value at equilibrium. It can not have any slope (gradients) or discontinuities at all. The Fermi level is our real-life EREF! 13 Let’s examine this constant EF + V If current flows => it is not equilibrium and EF must be Semiconductor changing. Ex In this picture, we have no Eelectron connections. Therefore I=0 and Ex EC it is still equilibrium! Brings us to a good question: E Note: i • If electrons and holes are moved by Ex, how can there be NO CURRENT here??? Won’t Ex move the electrons => current? answer lies in the concept of “Diffusion”. Next… EF EV The Looks Looks N-type P-type 14 Diffusion I Examples: • Perfume, • Heater in the corner (neglecting convection), • blue dye in the toilet bowl. What causes the motion of these particles? • Random thermal motion coupled with a density gradient. ( Slope in concentration.) 15 Green dye in a fishbowl … If you placed green dye in a fishbowl, right in the center, then let it diffuse, you would see it spread out in time until it was evenly spread throughout the whole bowl. This can be modeled using the simple-minded motion described in the figure below. L-bar is the “mean (average) free path between collisions” and t the mean free time. Each time a particle collides, it’s new direction is randomly determined. Consequently, half continue going forward and half go backwards. 32 Dye Concentration 16 16 8 8 4 4 8 8 8 8 4 4 x l -3 -2 -1 0 1 2 3 16 Diffusion II Over a large scale, this would look more like: t=0 t1 Let’s look more in depth at this section of the curve. t2 t3 tequilibrium 17 Diffusion III What kind of a particle movement does Random Thermal motion (and a concentration gradient) cause? n(x) nb0 nb1 nb2 Bin (0) Bin (1) Bin (2) Line with slope: nb 2 nb1 l Half of e- go left half go right. x0 l x0 It causes net motion from large concentration regions to small concentration regions. x0 l dn dx x0 x-axis 18 Diffusion IV Net • • • • number of electrons crossing x0 is: Number going right: 0.5*nb1*ℓ*A Minus Number going left: 0.5*nb2*ℓ*A Net is = 0.5*ℓ*A*(nb1-nb2) (note ℓ*A=volume of a bin.) Flux = # of particles crossing a plane per unit time and unit area. Symbol is: f Or f = 0.5*ℓ*A*(nb1-nb2) t*A f = 0.5*ℓ (nb1-nb2) t (t = mean free time.) 19 Diffusion V Using the fact that slope (dn/dx) = -(nb1-nb2)/ℓ gives: f = - 0.5*ℓ2 dn t dx or f = -Dn*dn/dx (electrons) or f = -Dp*dp/dx (holes) Now: When charges move we get current. Consequently, the current density is directly related to the particle flux. The equations are: • (electrons) (holes) J p = qf p J n = qfn = qDn dn dx (1 D) = qDnn (3 D) = dp qD p dx (1 D) = qD pp (3 D) 20 Diffusion VI Let’s n(x) look at an example: dn/dx = 0 here x J(x) x The electrons are diffusing out of the center and toward the edges. 21 Currents round-up So now we know that our total currents have 2 components: • DRIFT – due to any electric field we apply • DIFFUSION – due to any (dp/dx, dn/dx) we apply and thermal motion. J n = qnmn E qDnn Drift Diffusion J p = qpm p E qD pp J total = J p J n 22 Answering that old question can we have an electric Field and still have no current? (Still have J = 0?) + V - How Diffusion must balance Drift! Semiconductor Ex Eelectron Ex Ei EF EV Example: J p = qpm p E qD pp = 0 or E= Dp 1 dp m p p dx EC Looks Looks N-type P-type 23 Einstein Relationship We next remember: p=niexp((Ei-EF)/kBT) Plugging this into our equation for the electric field and noting that dEF/dx = 0 … we get The Einstein Relationships. Dp mp = k BT q and Dn mn = k BT q These are very useful. You will never find a table for both Dp and mp as a result of these. Once you have m, you have D too, by this relationship. 24 A sanity check Pretend we have: What will be the fluxes and currents? x Ex Holes Mechanism Electrons Diffusion Flux (f) Current Density (J) n(x) Drift Flux (f) p(x) Current Density (J) 25 Recombination – Generation I (G): How eand h+ are produced or created. Recombination (R): How e- and h+ are destroyed or removed Generation The concepts are visually seen in the energy band diagram below. Ee G R EC At equilibrium: r = g and since the generation rate is set by the temperature, we write it as: r = gthermal hv hv EV x 26 Recombination – Generation II Recombination must depend upon • the # of electrons: no • the # of holes: po (If no e- or h+, nothing can recombine!) From the chemical reaction • e- + h+ → Nothing we can know that • r = αrnopo = αrni2 = gthermal The recombination “rate coefficient” When the temperature is raised • gthermal increases Therefore • ni must increase too! 27 Recombination – Generation III A variety of recombination mechanisms exist: Ee Direct, Band to Band R G Auger EC hv Ee G hv R EC EV x Ee EV Indirect via R-G centers R G x EC R-G Center Energy Level EV x 28 GaAs is a Direct Band Gap Semiconductor Eg – The Band Gap Energy Direct recombination of electrons with holes occurs. The electrons fall from the bottom of the CB to the VB by giving off a photon! GaAs band structure produced by J. R. Chelikowsky and M. L. Cohen, Phys. Rev. B 14, 556 (1976) using an empirical Pseudo-potential method see also: Cohen and Bergstrasser, Phys. Rev. 141, 789 (1966). 29 GaAs band structure produced by W. R. Frensley, Professor of EE @ UTD using an empirical Pseudo-potential method see also: Cohen and Bergstrasser, Phys. Rev. 141, 789 (1966). 30 Si is an Indirect Band Gap Semiconductor Eg – The Band Gap Energy Only indirect recombination of electrons with holes occurs. The electrons fall from the bottom of the CB into an R-G center and from the R-G center to the VB. No photon! Silicon band structure produced by J. R. Chelikowsky and M. L. Cohen, Phys. Rev. B 14, 556 (1976) using an empirical Pseudo-potential method see also: Cohen and Bergstrasser, Phys. Rev. 141, 789 (1966). 31 Silicon band structure produced by W. R. Frensley, Professor of EE @ UTD using an empirical Pseudo-potential method see also: Cohen and Bergstrasser, Phys. Rev. 141, 789 (1966). 32