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CAD of Digital VLSI
Ralph Etienne-Cummings
Exam 1: Devices, Circuits and Interconnections (1.5 hours, Open book)
October 5th, 2005
Attempt all questions. Show all calculations to obtain partial credits. If you run out of
time, outline how you would approach the problem. The exam will be graded out of 120
pts (i.e. 30 pts extra credit).
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P1: (i) A Si sample is doped with 1016 cm-3 boron atoms and a certain number of donors.
The Fermi level is 0.36eV above Ei at 300K. (15 points)
(a) Draw the energy bands for the sample. (5 points)
(b) What is the donor concentration for the sample. (10 points)
(ii) Three pieces of Si with donor concentration 1018 cm-3, acceptor concentration
10 cm-3 and donor concentration of 1017 cm-3, respectively, are abutted. (35 points)
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(c) Draw the band diagrams before and after they are abutted. (5 points)
(d) Compute the built in potential for each junction. (10 points)
(e) Sketch and Compute the depletion width on each side of each junction. (15
points)
(f) Can you name this type of device? (5 points)
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P2. Consider the circuit in figure P2. Assume Kn =10uA/V2, Kp=5uA/V2, Vton = |Vtop|
= 1V, =0 and =0 V-1. (40 pts)
(a) Compute Vo if Vin = 0V and 5V. (10 pts)
(b) Sketch the transfer function as Vin is swept from 0V to 5V. (10 pts)
(c) How would you expect the Vo to change in (a) and (b) if =0.5? (10pts)
(d) Draw the cross-section of the circuit, showing all relevant connections, parasitic
diodes and capacitors and shapes of the channels when Vin = 0V. (10 pts)
P.2
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P3. For the circuit P.2, compute (Drain_length = Source_Length = 4u): (20 pts)
(a) The capacitance at the input node, Vin @ Vin = 0V. (5 pts)
(b) The capacitance at the output node, Vout @ Vin = 0V. (5 pts)
(c) The capacitance at the input node, Vin @ Vin = 5V. (5 pts)
(d) The capacitance at the output node, Vout @ Vin = 5V. (5 pts)
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P4. Consider the circuit figure P4. Using the parameter set below, and assuming that the
lengths of the drain and source are 4um, (40 pts)
a)
b)
c)
d)
Compute the resistance of the NMOS when Vin = Vout = 1V and 4V. (10 pts)
List all the components of the capacitance at the Vout node. (5 points)
Compute the total capacitance at the Vout node for Vout = 2.5V. (10 points)
Assume the resistance value of the NMOS is the mean of the two values
computed in a), determine the time-constant of the circuit for small changes in
Vin around Vin = 2.5V. (10 points)
e) Estimate the total area of the circuit if implemented in the 0.5um CMOS process
using SCMOS rules. (10 pts)
Process Parameters:
NMOSFET
PMOSFET
K (oCox)
19.6 uA/V2
5.4 uA/V2
VTO
0.74 V
-0.74 V

0.6
0.6

0.06 V-1
0.19 V-1
Xd (Under Diffusion)
6 nm
6 nm
NSUB
1.3 x 10^(16) cm
-3
4.8 x 10^(15) cm-3
COX
1.1 x 10^(-3) F/m2
1.1 x 10^(-3) F/m2
CGDO = CGSO
6.6 x 10^(-12) F/m
6.6 x 10^(-12) F/m
CJ
2.8 x 10^(-4) F/m2
3.0 x 10^(-4) F/m2
CJSW
1.7 x 10^(-10) F/m
2.6 x 10^(-10) F/m
mb = msw
b = sw
Depth of Well
0.5
1V
0.5
1V
5um
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