ECE 3235 Electronics II
Homework # 3
Note:
1) Some of the problems use Figures in text part of the book, whereas some of them use
the Figures in the Problem Section. In the later case, there is usually a letter P before the
figure number.
2) You are supposed to work on it independently, but helpful discussion is encouraged.
3) If you need small signal models for MOSFET, please use the one shown in Figure 8.18
in page 497 in the book.
4) Please explicitly write down the assumptions and approximations that you make to
simplify your analysis to get full credit.
1. in the book, Page 549, problem 8.22
2. in the book, Page 550, problem 8.23
3. in the book, Page 550, problem 8.26 (Note the requested upper halfpower frequency is the same as 3dB bandwidth, just a different name.
Also, you will need to perform DC analysis first and then compute the
small-signal parameters, such as gm and rd , using equations you
learned from E1. In case you need a refresh, check out those
equations in Example 8.3 in page 501).
4. in the book, Page 550, problem 8.27 (Note in part (b), the requested
midband gain is equivalent to DC gain or low-frequency gain. In part
(c), the requested half-power frequency is again the same as 3dB
bandwidth).