48.8mW Multi-cell InP HBT
Amplifier with on-wafer power
combining at 220GHz
Thomas Reed, Mark Rodwell
University of California, Santa Barbara
Zach Griffith, Petra Rowell, Miguel Urteaga, Mark Field, Jon Hacker
Teledyne Scientific & Imaging, LLC
treed@ece.ucsb.edu
220 GHz InP HBT Power Amplifier
mm-Wave Power in Communications and Imaging
250nm Indium Phosphide HBT Technology
MMIC Power Amplifier Cells & Combiners
Multi-cell Power Amplifier Results




2
Thomas Reed
UCSB
CSICS M.4
10/19/2011
mm-Wave Power in
Communications and Imaging
3
Thomas Reed
UCSB
CSICS M.4
10/19/2011
Systems at High Frequency



High Bandwidth Communications
2

 PRec decreases as
R2
Wiltse, 1997
IEEE APSSymposium,
High Resolution Imaging Systems
4

 PRec decreases as
R4
220 GHz
Tx/Rx Challenges:
 Atmospheric Attenuation
 ~2.5 dB/km @ 220 GHz
 +3-30dB/km w/ Fog/Rain
 High Noise Figure
 ~10 dB(InP)
4
sea
level
4
km
9
km
Thomas Reed
UCSB
CSICS M.4
10/19/2011
mm-Wave Comm. requires large power
Minimum Received Power

Prec, min  kTFBQ 2
Prec, min  173.8dBm/H z  10dB(NF)  90dB(1Gbps )  3dB(Q 2 )  70.8dBm
Transmission Losses 300m

2
Prec
 λ 
 e-αR G t G r 
  1dB  20dBi  20dBi  139dB  100dB
Pt
 4R 
Minimum Transmitted Power 29.2 dBm = 0.83 W

Pt  29.2dBm  0.83W
...
5
PA
LNA
...
Thomas Reed
UCSB
CSICS M.4
10/19/2011
mm-Wave PA Results
35
Reed, et al. InP HBT
InP HEMT
Other InP HBT
GaN
30
20
15
P
out
(dBm)
25
10
5
0
80 90 100
200
300
Frequency (GHz)
6
Thomas Reed
UCSB
CSICS M.4
10/19/2011
250nm InP HBT Process
7
Thomas Reed
UCSB
CSICS M.4
10/19/2011
Device High Performance Operating Area
2


70
10.0
I
b,step
= 0.30mA
60
50
8.0
c

= 24m
I (mA)

Jmax =
Vbe,on = 0.85V
VBcbo = 4.5V
Pmax = 15mW/um2
Vce,hf = 3V
high bandwidth
250nm, 4-finger HBT, L
e,tot
Je (mA/m2)

12.0
12mA/um2
2
10mW/m 15mW/m
40
6.0
30
4.0
20
2.0
10
0.0
0
0
1
2
3
4
5
V (V)
ce
Data courtesy Zach Griffith
Quiescient Bias Point/
Class A load line
8
Thomas Reed
UCSB
CSICS M.4
10/19/2011
ƒt,ƒmax varies with DC Bias

ft/fmax peak =
400/700 GHz
12
384,435 f ,f
 max
Highly degraded
bandwidth above
Vce=3V
e

ft/fmax
=
350/590 GHz
431,730 f ,f
 max
2

J (mA/m )
10
8
398,716 f ,f
 max
345,650 f ,f
 max
6
275,550 f ,f
 max
4
217,452 f ,f
 max
175,384 f ,f
 max
2
124,290 f ,f
 max
0
0
1
2
3
V (V)
4
Reference units, GHz
ce
9
Thomas Reed
UCSB
CSICS M.4
5
10/19/2011
Multi-finger HBT Modeling
 Device Modeling
Emitter
 Hole in Ground Plane
Base
 Multi-finger HBT
performance verified
 4-finger HBT
 Aemitter= 4x 0.25x6μm2
Collector
 ft/fmax = 333/530GHz
Ground Plane
 1-finger HBT
 ft/fmax = 350/590GHz
Another 4-finger cell
10
Thomas Reed
UCSB
CSICS M.4
10/19/2011
Non-Inverted Microstrip Wiring
Local GND
 Wider 50Ω than inv. microstrip
 Must Model Holes in GND plane
MIM Capacitors, Thin-Film Resistors


50 Ω
Metal 4
1µm
15µm
BCB
1µm
5µm
Metal 3
(εr = 2.7) BCB
Metal 2
BCB
MIM CAP
GND
11
Thomas Reed
UCSB
Metal 1
CSICS M.4
10/19/2011
MMIC Power Amplifier Cells
& Combiners
12
Thomas Reed
UCSB
CSICS M.4
10/19/2011
MMIC Power Amplifier Cell Design
Cascode Amplifier Topology
Gain, Input/Output Isolation,
Interconnects: ADS Momentum
2
2
10mW/m 15mW/m
12.0
ΔV
250nm, 4-finger HBT, L
10.0
I
b,step
70
= 0.30mA
60
50
8.0
c
ΔI
6.0
40
30
4.0
20
2.0
10
0.0
0
0
1
2
3
4
5
V (V)
ce
ΔV
2V

 111/finger
ΔI 18mA
High Zo
MIM
13
Thomas Reed
UCSB
CSICS M.4
10/19/2011
I (mA)
Je (mA/m2)
= 24m
e,tot
A 4-finger Amplifier Cell
14
Thomas Reed
UCSB
CSICS M.4
10/19/2011
A 4-finger Amplifier Cell
DC Supplies
CE
15
CB
λ/4 Chokes
Thomas Reed
UCSB
CSICS M.4
10/19/2011
A 4-finger Amplifier Cell
Input Matching
Output Tuning
DC Block
Bypass Cap
16
Thomas Reed
UCSB
CSICS M.4
10/19/2011
Combining for High MMIC Power


Combine 4:1 and 2:1 for
larger total power
Limits to combiners

17
Large IL at L ≥ λg/4
Thomas Reed
UCSB
CSICS M.4
10/19/2011
2:1 Power Combiner
√2 * Zo
L = λ/4
Zo
√2 * Zo
Cell
Measured 1.25dB insertion loss for
Back-to-back Combiners
S-Parameters (dB)
0
Combiner
-5
-10
-15
-20
-25
S11 Measured
-30
S21 Measured
-35
-40
200
220
240
260
280
300
320
340
Frequency (GHz)
18
Thomas Reed
UCSB
2-Cell Power Amplifier with 2:1
power combining. The die is
0.7x0.58 mm2.
CSICS M.4
10/19/2011
4:1 Power Combiner

Cell
Reduced to Lumped L/C for design
Combiner
Measured 1.3 dB Insertion Loss for
Back-to-back 4:1 power Combiners.
4-cell InP HBT amplifier with 4-1
power combiners. The die is
0.7x0.65 mm2.
19
Thomas Reed
S-parameters (dB)
0
-5
-10
S21 Measured
S21 Simulated
-15
200 220 240 260 280 300 320 340
Frequency (GHz)
UCSB
CSICS M.4
10/19/2011
48.8 mW 4-finger Power Amplifiers
20
Thomas Reed
UCSB
CSICS M.4
10/19/2011
MMIC Measurements and Data

Small Signal Measurement



VNA with 206-340 GHz
frequency extender heads
SOLT calibration for circuits
Power Sweep Measurement


200 & 220 GHz frequency
multiplier chains and sub-mm
wave power meter
Insertion Loss Calibration
VDI
Source
21
Thomas Reed
UCSB
To
Meter
CSICS M.4
10/19/2011
P
out
(dBm)
2-Cell PA Results
14
2-Cell HBT Power Amplifier
12
10
LL1, P
= 26.3mW
8
LL2, P
= 23.7mW
6
LL3, P
= 20.3mW
ΔV = 2, 2.5, 3V
4
2
Operating frequency = 208GHz
0
-10
-5
0
5
10
P (dBm)
S21=10.9 dB @ 220GHz
Pout,max=26.3mW @ 208GHz
out,max
out,max
out,max
in
10
S-parameters (dB)
S-parameters (dB)
15
5
0
-5
-10
S21 Measured
S21 Simulated
-15
-20
200 220 240 260 280 300 320 340
Frequency (GHz)
22
5
0
-5
-10
-15
-20
S11 Measured
S11 Simulated
-25
S22 Measured
S22 Simulated
-30
-35
200 220 240 260 280 300 320 340
Frequency (GHz)
Thomas Reed
UCSB
CSICS M.4
10/19/2011
4-Cell PA Results
S21 = 10.1 dB @ 220 GHz
Pout ≈ 48mW @ 210-220GHz
10
S21 Measured
S21 Simulated
5
0
-5
-10
-15
4-Cell HBT Power Amplifier
23
(mW)
out
P
out
P
-10
12
11
P = 48.8mW
10
out
9.0
P
out
8.0
Gain 7.0
6.0
5.0
Operating frequency = 220GHz
4.0
-5
0
5
10
15
P (dBm)
55
49.7mW
50
P
45
out
40
5.1dB
35
30
25
20
205
210
8.0
47.9mW
48.8mW
6.2dB
Thomas Reed
UCSB
6.0
40.2mW
5.0
3.7dB
4.2dB
32.1mW
4.5dB
Gain
215
220
225
Frequency (GHz)
in
7.0
CSICS M.4
10/19/2011
4.0
3.0
2.0
230
Gain (dB)
18
16
14
12
10
8
6
4
2
Gain (dB)
(dBm)
-20
200 220 240 260 280 300 320 340
Frequency (GHz)
5
0
-5
-10
-15
-20
S11 Measured
-25
S11 Simulated
S22 Measured
-30
S22 Simulated
-35
200 220 240 260 280 300 320 340
Frequency (GHz)
SParameters (dB)
SParameters (dB)
15
.
8-Cell Power Amplifiers
Pout = 66.1mW @ 215 GHz
S21,max = 9.1dB @ 217 GHz
3dB Bandwidth 206-242GHz
Measured Pout limited by 220GHz source power
S-parameters (dB)
10
S21
0
S22
-10
-20
-30
S11
8-Cell Amplifier
-40
200 220 240 260 280 300 320 340
Frequency (GHz)
8.5
8.0
15
P = 58.4mW
7.5
P
out
10
7.0
6.5
5
Gain
6.0
0
5.5
Operating frequency = 220GHz
5.0
-5
-10
-5
0
5
10
15
P
out
out
P (dBm)
in
24
Thomas Reed
UCSB
CSICS M.4
10/19/2011
Gain (dB)
(dBm)
20
8-Cell HBT Power Amplifier
Linear Power Density
Pout, amp  48.8mW
Pout,cell 
Pout, finger 
Pout, amp
4cells
Pout, cell
 12.2mW
4fingers
 3.05mW
Pout, finger
W
Linear Power Density 
 0.51
6 m
mm

InP HBT process is a competitive high power-density technology.
25
Thomas Reed
UCSB
CSICS M.4
10/19/2011
Recapitulation



Modular amplifier cells have been designed to have high
gain and high output power.
4-cell amplifiers show 48.8 mW saturated output power
at 220 GHz using InP HBTs.
8-cell amplifiers show 58 mW output power at 220 GHz
but measurements were limited by source power.
26
Thomas Reed
UCSB
CSICS M.4
10/19/2011
THANK YOU!




CSICS Technical Committee
Zach Griffith, Mark Rodwell, and Mark Field
UCSB Rodwell Group Members
DARPA MTO HiFive Program
27
Thomas Reed
UCSB
CSICS M.4
10/19/2011
Questions?
28
Thomas Reed
UCSB
CSICS M.4
10/19/2011
Bonus Slides
29
Thomas Reed
UCSB
CSICS M.4
10/19/2011
mm-Wave Power Amplifiers
Current Power Amplifier Results

Fab
Author
Paper
Journal/Conference
Raytheon
UCSB
Brown, A.
Reed, T.
UCSB
Reed, T.
NGST
Radisic, V.
W-band GaN amplifier MMICs
66.1 mW InP HBT Power Amplifier
48.8 mW Multi-cell InP HBT
Amplifier with on-wafer power
combining at 220 GHz
A 50mW 220GHZ Power Amplifier
Module
NGST
Huang, P.P.
A 20mW G-band monolithic driver
amplifier using 0.07-um InP HEMT IEEE MTT-S 2006
UCSB
Paidi
NGST
Deal, W.R.
NGST
Chen, Y.C.
UCSB
Reed, T.
NGST
Mei, X.B.
NGST
Deal, W.R.
30
G-band (140-220GHz) and W-band
(75-110GHz) InP DHBT medium
power amplifiers
Development of Sub-MillimeterWave Power Amplifiers
A 95-GHz InP HEMT MMIC
amplifier with 427-mW power
output
3.0 mW Common Base Power
Amplifier with 3 dB Small Signal
Gain at 221 GHz in InP DHBT
Technology
Sub-50nm InGaAs/InAlAs/InP
HEMT for sub-millimeter wave
power amplifier applications
A balanced sub-millimeter wave
power amplifier
Key
Black – GaN
Red – InP HEMT
Green – My InP HBT Results
Yellow – Other InP HBT Results
IMS 2011
* Not Published Yet
Pout (dB) vs. Freq (GHz)
35
CSICS 2011
IMS 2010
IEEE Trans. Microwave
Theory Tech Feb 2005
IEEE Trans. Microwave
Theory Tech Dec 2007
IEEE Microwave and
Guided Wave Letters Nov
1998
Lester Eastman
Conference 2010
30
25
20
15
10
IPRM 2010
IMS Digest 2008
Thomas Reed
5
0
30
UCSB
300
CSICS M.4
10/19/2011
Collector Metal
Ground Extension
DC Blocking Capacitors

Ground
Plane
Ground Plane hole


Large enough to represent a
short at 220GHz.
Blocking Caps create a hole in
the ground plane

DC Block Cap
Inductance (Think Slot Antenna)
Port 1
Port 2
Port 1
Metal 2
Metal 2
MIM CAP
GND
Metal 1
GND
Collector Metal
31
Thomas Reed
UCSB
CSICS M.4
10/19/2011
Port 2
System Components at High Frequency

High Frequency LNAs

94 GHz InP mHEMT: 3dB NF


150-215 GHz InP HBT: 5-12dB NF


(J. Hacker, et al. THz MMICs based on InP HBT Technology. IMS 2010.)
670 GHz InP HEMT: 13dB NF

32
(Samoska, L. Towards Terahertz MMIC Amplifiers: Present Status and Trends. MTT-S 2006.)
300 GHz InP HBT LNA: 11.2dB NF


(Mikko Karkkainen, et al. Coplanar 94 GHz Metamorphic HEMT Low Noise Amplifiers.
CSICS 2006.)
(Deal, W.R., et al. Low Noise Amplification at 0.67 THz Using 30nm InP HEMTs. Microwave
and Wireless Components Letters July 2011.)
Thomas Reed
UCSB
CSICS M.4
10/19/2011
Rain, Fog, & Humidy Reduce Range and
Reliability
rain 50 mm/hr: 20 dB/km, 30-1000 GHz
150 mm/hr : 50 dB/km, 30-1000 GHz
Clouds, heavy fog:
~(25 dB/km)x(frequency/500 GHz)
90% Humidity: >30 dB/km above 300 GHz
nondominant below 250 GHz (Rosker 2007 IEEE IMS)
Manabe, Yoshida,
.1993 EEE Int. Conf.
on Communications,
tropical deluge
heavy rain
very heavy fog
Liebe, Manabe, Hufford,
IEEE Trans Antennas
and Propagation, Dec.
1989
rain
Olsen, Rogers, Hodge,
IEEE Trans Antennas &
Propagation Mar 1978
33
Thomas Reed
UCSB
CSICS M.4
10/19/2011
MMIC Measurements and Data

“Load Pull” Station



Power Sweep using VDI 200
GHz and 220GHz Multiplier
Chain
Calorimeter—Erickson submm wave power meter
Calibration


34
VDI
Source
To
Meter
Above Photo Courtesy Zach Griffith
Insertion Loss calibration
with the reference plane at
the probe tips
Waveguide flange to probe
tip insertion loss ~1.7dB
Thomas Reed
UCSB
CSICS M.4
10/19/2011