2010 IEEE Device Research Conference, June 21-23, Notre Dame, Indiana III-V FET Channel Designs for High Current Densities and Thin Inversion Layers Mark Rodwell University of California, Santa Barbara Coauthors: W. Frensley: University of Texas, Dallas S. Steiger, S. Lee, Y. Tan, G. Hegde, G. Klimek Network for Computational Nanotechnology, Purdue University E. Chagarov, L. Wang, P. Asbeck, A. Kummel, University of California, San Diego T. Boykin University of Alabama, Huntsville J. N. Schulman The Aerospace Corporation, El Segundo, CA. Acknowledgements: Herb Kroemer (UCSB), Bobby Brar (Teledyne) Art Gossard (UCSB), John Albrecht (DARPA) rodwell@ece.ucsb.edu 805-893-3244, 805-893-5705 fax Thin, high current density III-V FET channels InGaAs, InAs FETs THz & VLSI need high current low m*→ high velocities FET scaling for speed requires increased charge density low m* →low charge density Density of states bottleneck (Solomon & Laux IEDM 2001) → For < 0.6 nm EOT, silicon beats III-Vs Open the bottle ! low transport mass → high vcarrier multiple valleys or anistropic valleys → high DOS Use the L valleys. Simple FET Scaling Goal: double transistor bandwidth when used in any circuit → reduce 2:1 all capacitances and all transport delays → keep constant all resistances, voltages, currents gate-source, gate-drain fringing capacitances: 0.15-0.25 fF/mm C gd / Wg ~ must increase gate capacitance/area g m / Wg ~ v (C gs / LgWg ) Cgs / Wg (Cgs / Wg Lg ) Lg C gs, f / Wg ~ must reduce gate length To double speed, we must double ( g m / Wg ) , ( I D / Wg ), (C gs / LgWg ), ns . FET Scaling Laws LG Changes required to double device / circuit bandwidth. laws in constant-voltage limit: FET parameter gate length current density (mA/mm), gm (mS/mm) channel 2DEG electron density electron mass in transport direction gate-channel capacitance density dielectric equivalent thickness channel thickness channel density of states source & drain contact resistivities Current densities should double Charge densities must double change decrease 2:1 increase 2:1 increase 2:1 constant increase 2:1 decrease 2:1 decrease 2:1 increase 2:1 decrease 4:1 gate width WG Semiconductor Capacitances Must Also Scale (Vgs Vth ) ( unidirecti onal motion) cox cdepth / Tinversion ( E f Ewell ) / q cdos q 2 gm* / 2 2 channel charge qns cdos (V f Vwell ) q( E f Ewell ) ( gm* / 22 ) Inversion thickness & density of states must also both scale. Calculating Current: Ballistic Limit Natori Channel Fermi voltage voltage applied to cdos determines Fermi velocity v f through E f qV f m * v 2f / 2 mean electron velocity v ( 4 / 3 )v f Channel charge : s cdos V f Vc cdoscequiv cequiv cdos V gs Vth cdos q2 gm * / 22 cdos,o g (m * / mo ) , where g is the # of band minima mA Vgs Vth g (m * / mo )1 / 2 J 84 3/ 2 1 V m m 1 ( c / c ) g ( m * / m ) dos,o ox o 3/ 2 Do we get highest current with high or low mass ? Drive current versus mass, # valleys, and EOT mA Vgs Vth J K1 84 mm 1 V normalized drive current K 1 0.35 3/ 2 , where K1 InGaAs <--> InP 1 (c g m* mo 1/ 2 * dos,o / cequiv ) g ( m / mo ) Si 3/ 2 g=2 g=1 0.3 cequiv ( 1/cox 1/cdepth )1 0.25 εSiO2 /EOT 0.2 0.3 nm 0.4 nm 0.15 0.1 0.05 0.6 nm EOT includes the wavefunction depth term (mean wavefunction depth* SiO2 /semiconductor ) 0 0.01 EOT=1.0 nm 0.1 m*/m 1 o InGaAs MOSFETs: superior Id to Si at large EOT. InGaAs MOSFETs: inferior Id to Si at small EOT. Solomon / Laux Density-of-States-Bottleneck → III-V loses to Si. Transit delay versus mass, # valleys, and EOT 1/ 2 Lg m* 1 Volt Qch ch K 2 where K 2 7 ID 2.52 10 cm/s Vgs Vth m0 1/ 2 EOT=1.0 nm 1.5 0.6 nm 1 nm 0.4 nm 0.6 nm 0.4 nm 2 Normalized transit delay K 1/ 2 * cdos,o m 1 g ceq mo 1 cequiv ( 1/cox 1/csemi )1 εSiO2 /EOT g=1, isotropic bands 0.5 g=2, isotropic bands EOT includes wavefunction depth term (mean wavefunction depth*SiO2 /semiconductor ) 0 0 0.05 0.1 0.15 0.2 0.25 m*/m 0.3 0.35 o Low m* gives lowest transit time, lowest Cgs at any EOT. 0.4 Low effective mass also impairs vertical scaling Shallow electron distribution needed for high Id, high gm / Gds ratio, low drain-induced barrier lowering. 2 * 2 Energy of Lth well state L / m Twell . For thin wells, only 1st state can be populated. For very thin wells, 1st state approaches L-valley. Only one vertical state in well. Minimum ~ 3 nm well thickness. → Hard to scale below 10-16 nm Lg. III-V Band Properties, normal {100} Wafer L X valley material substrate m* / mo material substrate 0.045 In 0.5Ga 0.5As InP 0.026 InAs InP 0.067 GaAs GaAs --Si Si ml / mo X valley mt / mo E x E ml / mo L valley mt / mo E L E 1.29 1.13 0.19 0.16 0.83 eV 0.87 eV 1.30 0.92 0.22 0.19 0.47 eV (negative) 1.23 0.65 1.90 0.062 0.050 0.075 L - valley tra nsverse masses are comparable to valleys 0.47 eV 0.57 eV 0.28 eV Consider instead: valleys in {111} Wafer L X valley material substrate m* / mo material substrate 0.045 In 0.5Ga 0.5As InP 0.026 InAs InP 0.067 GaAs GaAs --Si Si ml / mo X valley mt / mo E x E ml / mo L valley mt / mo E L E 1.29 1.13 0.19 0.16 0.83 eV 0.87 eV 1.30 0.92 0.22 0.19 0.47 eV (negative) 1.23 0.65 1.90 0.062 0.050 0.075 Orientatio n : one L valley has high vertical mass X valleys & three L valleys have moderate vertical mass 0.47 eV 0.57 eV 0.28 eV Valley in {111} wafer: with quantization in thin wells L X valley material substrate m* / mo material substrate 0.045 In 0.5Ga 0.5As InP 0.026 InAs InP 0.067 GaAs GaAs --Si Si ml / mo X valley mt / mo E x E ml / mo L valley mt / mo E L E 1.29 1.13 0.19 0.16 0.83 eV 0.87 eV 1.30 0.92 0.22 0.19 0.47 eV (negative) 1.23 0.65 1.90 0.062 0.050 0.075 Selects L[111] valley; low transv erse mass 0.47 eV 0.57 eV 0.28 eV {111} -L FET: Candidate Channel Materials valley material material In material 0.5 Ga 0.5 As In Ga 0.5 0.5 As GaAs GaAs GaSb GaSb Ge valley LLvalley /m mm t /t mo o 0.062 0.062 0.075 0.075 /m m* / mo mm l /l mo o 1.23 0.045 1.23 1.90 0.067 1.90 1.30 0.10 0.10 0.039 1.30 1.58 0.08 Well thickness for EEL LEE L alignment 0.47eV eV 0.47 1 nm (?) 0.28eV eV 0.28 2 nm 0.07eV eV 0.07 4 nm (negative) - - - =0 eV L=177 meV X[100]= 264 meV X[010] = 337 meV Wavefunctions 3 nm GaAs well AlSb barriers Energy, eV Standard III-V FET: valley in [100] orientation 2 1.5 1 0.5 0 -0.5 -1 -1 X[010] X[100] L L 1st Approach: Use both and L valleys in [111] 2.3 nm GaAs well AlSb barriers [111] orientation -1 X L[111] L[111] L[111] = 41 meV L[111] (1)= 0 meV L[111] (2)= 84 meV L[111] , etc. =175 meV X=288 meV -1 L[111] Combined -L wells in {111} orientation vs. Si mA Vgs Vth J K1 84 mm 1 V 0.35 , where K1 GaSb GaAs 1 (c g m mo * 1/ 2 / cequiv ) g (m / mo ) * dos,o Si 1 Normalized current density K 3/ 2 g=2 0.3 cequiv ( 1/cox 1/csemi )1 εSiO2 /EOT 0.25 0.2 0.3 nm 0.15 0.4 nm 0.1 3/ 2 combined ( -L) transport 0.6 nm 0.05 EOT includes the wavefunction depth term (mean wavefunction depth*SiO2 /semiconductor ) 0 0.01 EOT=1.0 nm 0.1 m*/m o 2 nm GaAs /L well→ g =2, m*/m0=0.07 4 nm GaSb /L well→ m*/m0=0.039, mL,t*/m0=0.1 1 2nd Approach: Use L valleys in Stacked Wells Three 0.66 nm GaAs wells 0.66 nm AlSb barriers [111] orientation L[111](1) = 0 meV L[111](2)= 61 meV L[111](3)= 99 meV =338 meV L[111], etc =232 meV X=284 meV X L[111] L[111] -1 All L[111] -1 Increase in Cdos with 2 and 3 wells 3 C dos,N-well /C dos,1-well 3 wells 2.5 2 2 wells 1.5 1 0.01 1 nm well pitch 2 nm well pitch 3 nm well pitch 0.1 m*/m 1 o 3 High Current Density (111) GaAs/AlSb Designs (100) orientation (111) orientation 2.3 nm GaAs well AlSb barriers 2 1.5 1 0.5 0 -0.5 -1 Charge density, 1/cm 3 Wavefunctions Energy, eV 3 nm GaAs well AlSb barriers X[010] X[100] L L 2 s X L[111] L[111] L[111] -1 Three 0.66 nm GaAs wells 0.66 nm AlSb barriers X L[111] L[111] X L[111] L[111] L[111] -1 -1 All L[111] both L[111] -1 20 1 10 19 8 10 19 6 10 19 4 10 19 2 10 0 0 10 L[111] -1 -1 -1 -1 0 1 2 3 4 5 6 7 position, nm 0 1 2 3 4 5 6 7 position, nm 12 N (1/cm ) Two 0.66 nm GaAs wells 0.66 nm AlSb barriers 8 10 12 6 10 4 10 12 2 10 12 0 -1 0 1 2 3 4 5 6 7 position, nm 0 1 2 3 4 5 6 7 position, nm L valleys filling 0 0 0 -0.2 -0.1 0 0.1 0.2 0.3 -0.2 -0.1 0 0.1 0.2 0.3 -0.2 -0.1 0 0.1 0.2 0.3 -0.2 -0.1 0 0.1 0.2 0.3 (V -V ), V (V -V ), V (V -V ), V (V -V ), V gs th gs th gs th gs th Concerns Nonparabolic bands reduce bound state energies Failure of effective mass approximation:1-2 nm wells 1-2 monolayer fluctuations in growth → scattering→ collapse in mobility Purdue Confirmation Purdue Confirmation Steiger, Klimeck, Boykin Ryu, Lee, Hegde, Tan 1-D FET array = 2-D FET with high transverse mass 2-D FET 1-D Array FET Weak coupling → narrow transverse-mode energy distribution→ high density of states 3rd Approach: High Current Density L-Valley MQW FINFETs 8 2.5 nm well pitch Drain current, mA/mm 7 6 V -V =0.3 V gs 5 3 5 nm well pitch 2 1 EOT includes wavefunction depth term 0 0.01 2 2 2 i 2m*W 2 th 4 (mean wavefunction depth* valley energies Emin, i qVmin, i 0.3 nm EOT 0.6 nm EOT current I i SiO2 / 0.1 m*/mo semiconductor ) 1 gq 2 V f Vmin,i charge : Qch gl 2m*qV f Vmin,i gate voltage :Vgs V f Qch / Cox i 4th Approach: {110} Orientation→ Anisotropic Bands P. Asbeck transport L [111], L[11 1 ] : moderate vertical mass valleys populate High in - plane mass perpendicu lar to transport high density of states Low in - plane mass parallel to transport high carrier ve locity L [1 1 1], [ 1 11] : low vertical mass depopulate High in - plane mass parallel to transport low carrier ve locity Challenge : only moderate energy separation between desired and undesired valleys. Anisotropic bands, e.g. {110} mA Vgs Vth J K1 84 mm 1 V 3/ 2 , where K1 0.6 1 normalized drive current K g=2, m 1/ 2 || / mo ) 3/ 2 0 /m =0.5 perpendicular 0 cequiv ( 1/cox 1/csemi )1 εSiO2 /EOT 0.3 Transport in {110} oriented L valleys EOT=1.0 nm 0.2 0.1 / cequiv ) g (m m perpendicular 0.6 nm 0.4 dos,o 1/ 2 g=2, m /m =0.7 perpendicular 0 g=2, m /m =0.6 0.3 nm 0.4 nm 0.5 1 (c g (m1/ 2 / mo1/ 2 ) EOT includes wavefunction depth term (mean wavefunction depth* / 0 0.01 SiO2 semiconductor ) 0.1 m*/m 1 o GaAs and Ge {110} MOSFETs with L - valley tra nsport GaAs : n 2, m t / mo 0.075, ml / mo 1.9 Ge : n 2, m t / mo 0.081, ml / mo 1.58 THz FET scaling: with & without increased DOS Gate length nm Gate barrier EOT nm well thickness nm S/D resistance effective mass # band minima canonical fixed DOS stepped # 50 1.2 8.0 Wmm 210 *m0 0.05 1 1 1 35 0.83 5.7 25 0.58 4.0 18 0.41 2.8 150 0.05 100 0.05 74 0.08 1.4 1 1 2 1 1 2.8 1 2 13 0.29 2.0 53 9 0.21 1.4 37 0.08 0.08 4 1 3 5.7 1 3 3000 f 2000 4000 2500 max 1500 3500 3000 fmax 2000 f f , GHz 2500 canonical scaling stepped # of bands transport only , GHz Scaled FET performance: fixed vs. increasing DOS 1500 1000 500 500 0 2.5 0 1000 SCFL static divider clock rate, GHz drain current density, mA/mm 1000 mA/mm→ VLSI metric 2 1.5 1 0.5 200 mV gate overdrive 0 0 10 20 30 40 gate length, nm 50 60 SCFL divider speed 800 600 400 200 0 0 10 20 30 40 gate length, nm 50 Increased density of states needed for high drive current, fast logic @ 16, 11, 8 nm nodes 60 10 nm / 3 THz III-V FETs: Challenges & Solutions gate dielectric: decrease EOT 2:1 To double the bandwidth: S/D access regions: decrease resistivity 2:1 S/D regrowth Wistey et al Singisetti et al channel: keep same velocity, but thin channel 2:1 increase density of states 2:1 L (end) Purdue Confirmation MOSFET Scaling Laws parameter gate length Lg , source-drain contact lengths Constant - voltage / constant - velocity scaling laws : Changes required for : 1 increased bandwidth in an arbitrary circuit law 1 parameter gate-channel capacitance C g ch law 1 [1 / Cox 1 / Csemi 1 / C DOS ]1 (fF) LS / D (nm) 1 transconductance g m ~ C g ch v injection / Lg (mS) 0 equivalent oxide thickness Teq Tox SiO / oxide 1 1 (nm) dielectric capacitance Cox SiO LgWg / Teq (fF) gate-source, gate-drain fringing capacitances C gs, f Wg , C g d Wg (fF) 1 S/D access resistances Rs , R d ( W ) 0 S/D contact resistivity Rs / Wg , Rd / Wg ( W mm ) 1 gate width W g (nm) 2 2 inversion thickness Tinv ~ Twell / 2 (nm) 1 S/D contact resistivity c ( W mm 2 ) 2 semiconductor capacitance Csemi semi LgWg / Tinv (fF) 1 drain current I d ~ g m (V g s Vth ) (mA) 0 DOS capacitance CDOS q 2 nm* LgWg / 2 2 (fF) 1 drain current density ( mA/mm ) 1 electron density n s ( cm-2 ) 1 temperature rise (one device, K) ~ Wg1 2.0 nm GaAs well, AlAs barriers, on {111} GaAs Bound state energy, eV 1.2 1 valley 0.8 0.6 0.4 L(l) valley 0.2 0 -10 10 -9 10 well thickness, meters 10 -8 2 nm well : and L(l) minima both populated. : m * / mo 0.067 * L( l) : mlateral / mo 0.075 low m* high carrier ve locity two band minima doubles cdos 2 nm well good electrosta tics at ~ 5 - 7 nm Lg . GaSb well, AlSb barriers, on {110} GaSb GaSb well, AlSb barriers, on (110) GaSb Bound state energy, eV 0.6 0.5 L [111], L[11-1] 0.4 X [100], X[010] X [001] 0.3 L [1-11], L[-111] 0.2 0.1 0 -10 10 -9 10 well thickness, meters 10 -8