substance: boron compounds with group IV elements: boron carbide
property: boron carbide doped with N, P, O
The behavior of hydrogen, nitrogen and oxygen i
gas sensors [91K].
Ternary metal boron carbide systems in [99B].
mpurities in boron carbide (and alu
miniu m dodecaboride) for
N-implanted boron carbide
Tribological properties in [91R].
Rutherford backscattering spectrum in Fig. 1 [91R].
Coefficients of friction in Fig. 2 [91R, 88D, 88N].
P-doped boron carbide
lattice parameters (for (B11C) [(CBC)1−xPx)
x
0.00
0.05
0.10
0.20
0.35
0.5
a [Å]
5.599
5.589(3)
5.598(3)
5.608(2)
5.614(2)
5.627(1)
c [Å]
12.070
12.014(9)
12.012(8)
12.023(5)
11.973(6)
11.990(2)
93A
PC, PB, and PP chains are thought to be possible, which sufficiently large interato
bonding [94A].
activation energy for electrical conductivity
220 meV
T = 300...700 K
EA
240 meV
mic distances to prevent
x = 0.05 in (B11C)(CBC)1−x(CBP)x
x = 0.1 in (B 11C)(CBC)1−x(CBP)x
94A
undoped
x = 0.05 in (B11C)(CBC)1−x(CBP)x
x = 0.1 in (B11C)(CBC)1−x(CBP)x
94A
electrical conductivity
(σ T in K Ω−1cm−1)
σT
8·102
40
15
T = 300 K
Temperature dependence of the electrical conductivity of P-doped boron carbide in Fig. 3 [94A, 93A].
ac conductivities of undoped and P-doped boron carbide between 103 and 106 Hz in Fig. 4 [93A]
carrier densities
(in cm−3)
n
2.2·1020
8.4·1019
6.5·1019
undoped
x = 0.05 in (B11C)(CBC)1−x(CBP)x
x = 0.1 in (B11C)(CBC)1−x(CBP)x
94A
thermoelectric power
p-type (for x = 0.05 and x = 0.1 in (B11C)(CBC)1−x(CBPx) [94A].
Temperature dependence of the thermoelectric power in Fig. 5 [93A].
dielectric constant
Temperature dependence of the dielectric constant and loss tangents at 105 Hz in Fig. 6 [93A].
Raman effect
Raman spectra in Fig. 7 [93A] (see comment on conventionally measured Raman spectra of pure boron carbide).
O-doped boron carbide
Preparation at high pressure (reaction of mixtures of B, C, and B2O3at 5...7.5 GPa) [97H].
For phase diagram, see [97G].
lattice parameters
(in Å)
a
c
a
c
5.570(2)
12.117(3)
5.582(1)
12.135(3)
T = 300 K
B6C1.1O0.33 X-ray diffraction
97H
T = 300 K
B6C1.28O0.31 X-ray diffraction
97H
electronic properties
Parallel electron-energy-loss spectra (PEELS) of O-doped boron carbide compared with some other isostructural
compounds in Fig. 8 [97G].
N, O-doped boron carbide
Composition B6C0.91(N, O)0.27 in [97G].
For PEELS spectrum, see Fig. 8 [97G].
References:
88D
88N
91K
91R
93A
94A
97G
97H
99B
DeKoven, B.M., Hagans, P.L., Leddy, J.J.: Surf. Coat. Technol. 36 (1988) 207.
Nastasi, M., Kossowsky, P., Hirvonen, J.P., Elliot, N.: J. Mater. Res. 3 (1988) 1127.
Kervalishvili, P.D., Giorgaadze, K.A., Tabudsidze, M.L.: Sens. Actuators B (chemical) 5 (1991) 261.
Reeber, R.R., Whitley, J.Q., Kusy, R.P., Culbertson, R.J., Yu, N.: in: Boron-Rich Solids, Proc. 10th
Int. Symp. Boron, Borides and Rel. Compounds, Albuquerque, NM 1990 (AIP Conf. Proc. 231), D.
Emin, T.L. Aselage, A.C. Switendick, B. Morosin, C.L. Beckel ed., American Institute of Physics:
New York, 1991, p. 647.
Aselage, T.L., Emin, D., Samara, G.A., Tallant, D.R., van Deusen, S.B., Eatough, M.O., Tardy, H.L.,
Venturini, E.L.: Phys. Rev. B 48 (1993) 11759.
Aselage, T.L., Tallant, D.R., Emin, D., van Deusen, S.B., Yang, P.: Proc. 11th Int. Symp. Boron,
Borides and Rel. Compounds, Tsukuba, Japan, August 22 - 26, 1993, Jpn. J. Appl. Phys. Series 10
(1994), p. 58.
Garvie, L.A.J., Buseck, P.R., Rez, P.: J. Solid State Chem. 133 (1997) 347 (Proc. 12th Int. Symp.
Boron, Borides and Rel. Compounds, Baden, Austria, 1996).
Hubert, H., Garvie, L.A.J., Petuskey, W.T., McMillan, P.F.: J. Solid State Chem. 133 (1997) 356
(Proc. 12th Int. Symp. Boron, Borides and Rel. Compounds, Baden, Austria, 1996).
Bitterman, H., Rogl, P.: J. Solid State Chem. (2000) (Proc. 13th Int. Symp. Boron, Borides and Rel.
Compounds, Dinard, France, Sept. 1999).
Fig. 1.
Boron carbide :N. (a) Rutherford backscattering spectra of nitrogen-implanted and unimplanted boron carbide
and (b) their difference showing the implantation profile [91R]. Nominal composition is B 4C, probably close to
the carbon-rich limit of the homogeneity range B4.3C.
1500
1000
Boron carbide (:N)
800
1200
unimplanted
implanted
600
Yield [counts]
Yield [counts]
900
400
600
300
a
0
0.2
200
0.3
0.4
0.5
Energy E [MeV]
0.6
0.7
0
b
0
0.05
0.10
0.15
0.20
Depth [µm]
0.25
0.30
Fig. 2.
Boron carbide :N. coefficients of friction for Beta Ti wire against boron carbide that has been unimplanted
(circles) or N+ implanted (triangles); (a) static, (b) kinetic. The highlighted data points exceeded Chauvenet’s
criterion and were not included in the regression analysis [91R]. For composition see Fig. 1.
0.5
0.5
Boron carbide (:N)
static
kinetic
0.4
Frictional force f [kg]
Frictional force f [kg]
0.4
0.3
0.2
0.1
a
0
0.3
0.2
0.1
0.2
0.4
0.6
Normal force N [kg]
0.8
1.0
b
0
0.2
0.4
0.6
Normal force N [kg]
0.8
1.0
Fig. 3.
Boron carbide :P. Electrical conductivity (σT) vs. reciprocal temperature; P-doped samples (x = 0.05 and 0.10
respectively in the assumed compound (B11C)(CBC)1−x(PB)x) compared with undoped boron carbide. [93A,
94A].
10
5
8
6
Boron carbide (:P)
4
2
–1
–1
Conductivity σT [K Ω cm ]
10
4
undoped
(19 % C)
8
6
undoped
(18 % C)
4
2
10
3
8
6
P-doped (5 at%)
4
2
2
10
8
6
P-doped (10 at%)
4
2
10
0.5
1.0
1.5
2.0
2.5
3.0
3.5
–1
–3 –1
Inv. temperature T [10 K ]
4.0
Fig. 4.
Boron carbide :P. ac conductivity between 103 and 106 Hz vs. temperature. P doped boron carbide (x = 0.05 in
the assumed compound (B11C)(CBC)1−x(PB)x) compared with undoped boron carbide (18 at% C, dashed lines)
vs. temperature [93A]. σ0 = 1 Ω−1cm−1.
–2
Boron carbide (:P)
–3
Conductivity ln [σac/σ0]
–4
undoped (18 at% C)
P-doped (5 at%)
–5
–6
6
f = 10 Hz
–7
}105 Hz
–8
} 10 Hz
} 10 Hz
4
–9
3
– 10
– 11
0
50
100
150
200
–1
–3 –1
Inv. temperature T [10 K ]
250
Fig. 5.
Boron carbide :P. Thermoelectric power of P-doped boron carbide (x = 0.10 in the assumed compound
(B11C)(CBC)1−x(PB)x) vs. temperature [93A].
250
Boron carbide (:P)
–1
Thermoelectric power S [µ V K ]
240
230
220
210
200
190
300
350
400
450
500
Temperature T [K]
550
600
Fig. 6.
Boron carbide :P. (a) Real part of the dielectric constant and loss tangent at 105 Hz vs. temperature. Undoped
boron carbide (18 at% C) (-.-.-) and P-doped boron carbide ( ------, x = 0.05, –––––, x = 0.10) in the assumed
compound (B11C)(CBC)1−x(PB)x) [93A]. Fig. (b) shows ε1 at 4 K as a function of frequency.
Boron carbide (:P)
a
f = 10 Hz
25
0.5
20
0.4
15
0.3
10
0.2
5
0.1
0
0
10
20
30
40
50
Temperature T [K]
T=4K
0.6
5
60
undoped (18 at% C)
P-doped (5 at%)
P-doped (10 at%)
15
Dielectric constant ε1
Dielectric constant ε1
30
17
0.7
Dielectric loss tan δ
35
13
11
0
70
9 2
10
b
2
4
6 8 10
3
2
4
6 8 10
Frequency f [Hz]
4
2
4
6 8 10
5
Fig. 7.
Boron carbide :P. Raman intensity vs. Raman shift for P-doped boron carbide (x = 0.05, 0.10, 0.20, 0.35 in the
assumed compound (B11C)(CBC)1−x(PB)x) compared with undoped boron carbide (19 at% C) [93A].The Raman
spectra were obtained with the conventional Raman spectroscopy using high energies of the exciting laser [93A,
94A].
Boron carbide (:P)
undoped
P-doped
Raman intensity IR
(19 at% C)
(5 at%)
(10 at%)
(20 at%)
(35 at%)
200
300
400
500
600
700
800
–1
Wavenumber ν [cm ]
900
1000
1100
1200
Fig. 8.
Boron carbide:O. Parallel electron energy-loss spectra (PEELS) of O-doped boron carbide compared with some
other isostructural compounds (B6N0.92, B6O0.96, B6N0.52O0.51, B6C0.91(N,O)0.27 (background subtracted)
[97G].
C
K edge
onset
N
K edge
onset
O
K edge
onset
B6C1.2O0.24
B6N0.92
Intensity I
B6O0.96
B6N0.52O0.51
B6C0.66O0.66
B6C0.23O0.78
B6C0.91(N,O)0.27
200
250
300
350
400
450
500
Energy loss ∆E [eV]
550
600
650