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HMC712
v01.0709
Attenuators - analog - Chip
1
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 5 - 30 GHz
Typical Applications
Features
The HMC712 is ideal for:
Wide Bandwidth: 5 - 30 GHz
• Point-to-Point Radio
Excellent Linearity: +28 dBm Input P1dB
• VSAT Radio
Wide Attenuation Range: 30 dB
• Test Instrumentation
Compact Die Size: 1.4 x 1.2 x 0.1 mm
• Microwave Sensors
• Military, ECM & Radar
General Description
Functional Diagram
The HMC712 die is an absorptive Voltage Variable
Attenuator (VVA) which operates from 5 - 30 GHz and
is ideal in designs where an analog DC control signal
must be used to control RF signal levels over a 30 dB
amplitude range. It features two shunt-type attenuators
which are controlled by two analog voltages, Vctrl1
and Vctrl2. Optimum linearity performance of the
attenuator is achieved by first varying Vctrl1 of the 1st
attenuation stage from -3V to 0V with Vctrl2 fixed at
-3V. The control voltage of the 2nd attenuation stage,
Vctrl2, should then be varied from -3V to 0V, with Vctrl1
fixed at 0V.
However, if the Vctrl1 and Vctrl2 pins are connected
together it is possible to achieve the full analog
attenuation range with only a small degradation in
input IP3 performance. Applications include AGC
circuits and temperature compensation of multiple
gain stages in microwave point-to-point and VSAT
radios.
Electrical Specifications, TA = +25° C, 50 Ohm system
Parameter
Insertion Loss
Attenuation Range
1-1
Min.
5 - 16 GHz
16 - 24 GHz
24 - 30 GHz
Typ.
Max.
Units
2.5
3.5
4.5
dB
dB
dB
30
dB
dB
Input Return Loss
12
Output Return Loss
10
dB
Input Power for 1 dB Compression (any attenuation)
28
dBm
Input Third Order Intercept
(Two-tone Input Power = 10 dBm Each Tone)
32
dBm
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC712
v01.0709
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 5 - 30 GHz
1
Attenuation vs. Frequency over Vctrl
Vctrl1 = 0V, Vctrl2 = Variable
Attenuation vs. Frequency over Vctrl
Vctrl1 = Variable, Vctrl2 = -3V
ATTENUATION (dB)
ATTENUATION (dB)
-10
-5
-10
-3.0 V
-1.8 V
-1.4 V
-0.8 V
0.0 V
-20
-30
-3.0 V
-1.8 V
-1.4 V
-0.8 V
0.0 V
-40
-15
-50
2
6
10
14
18
22
26
2
30
6
10
FREQUENCY (GHz)
Attenuation vs. Vctrl1
Over Temperature @ 10 GHz, Vctrl2 = -3V
18
22
26
30
Attenuation vs. Vctrl2
Over Temperature @ 10 GHz, Vctrl1 = 0V
0
0
-5
ATTENUATION (dB)
-2
-4
-6
+25 C
+85 C
-55 C
-8
-10
-15
-20
+25 C
+85 C
-55 C
-25
-30
-10
-35
-3
-2.5
-2
-1.5
-1
-0.5
0
-3
-2.5
-2
Vctrl1 (V)
-1.5
-1
-0.5
0
Vctrl2 (V)
Attenuation vs. Pin @ 10 GHz
Vctrl1 = Variable, Vctrl2 = -3V
0
-2
ATTENUATION (dB)
ATTENUATION (dB)
14
FREQUENCY (GHz)
Attenuators - analog - Chip
0
0
-4
-6
-3.0 V
-1.8 V
-1.2 V
-8
-0.6 V
0.0 V
-10
0
5
10
15
20
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
1-2
HMC712
v01.0709
1
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 5 - 30 GHz
Insertion Phase vs. Vctrl1, Vctrl2 = -3V
Insertion Phase vs. Vctrl2, Vctrl1 = 0V
2 GHz
5 GHz
10 GHz
90
135
20 GHz
25 GHz
INSERTION PHASE (degrees)
INSERTION PHASE (degrees)
180
135
45
0
-45
-90
-135
-180
-3
2 GHz
5 GHz
10 GHz
90
0
-45
-90
-135
-180
-225
-2.5
-2
-1.5
-1
-0.5
0
-3
-2.5
-2
-1.5
Input Return Loss
Vctrl1 = Variable, Vctrl2 = -3V
-0.5
0
Input Return Loss
Vctrl1 = 0V, Vctrl2 = Variable
0
0
RETURN LOSS (dB)
-10
-20
-30
-3.0 V
-1.6 V
0.0 V
-40
-10
-20
-3.0 V
-1.6 V
0.0 V
-30
-40
2
6
10
14
18
22
26
2
30
6
10
14
18
22
26
30
22
26
30
FREQUENCY (GHz)
FREQUENCY (GHz)
Output Return Loss
Vctrl1 = Variable, Vctrl2 = -3V
Output Return Loss
Vctrl1 = 0V, Vctrl2 = Variable
0
0
RETURN LOSS (dB)
RETURN LOSS (dB)
-1
VCTRL 2
-50
-10
-20
-10
-20
-3.0 V
-1.6 V
0.0 V
-3.0 V
-1.6 V
0.0 V
-30
-30
2
6
10
14
18
FREQUENCY (GHz)
1-3
20 GHz
25 GHz
45
VCTRL 1
RETURN LOSS (dB)
Attenuators - analog - Chip
180
22
26
30
2
6
10
14
18
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC712
v01.0709
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 5 - 30 GHz
Input IP3 vs Input Power @ 10 GHz
Vctrl1 = Variable, Vctrl2 = -3V
Input IP3 vs. Input Power Over Frequency
Vctrl1 = -2.2V, Vctrl2 = -3V (Worst Case IP3)
60
40
30
-3.0 V
-2.4 V
-2.2 V
-1.8 V
0.0 V
20
30
10 GHz
15 GHz
20 GHz
25 GHz
25
10
20
0
5
10
15
20
0
SINGLE TONE INPUT POWER (dBm)
5
10
15
20
SINGLE TONE INPUT POWER (dBm)
Input IP3 vs. Input Power Over Temperature
@ 10 GHz, Vctrl1 = -2.2V, Vctrl2 = -3V
Attenuation vs. Frequency over Vctrl
Vctrl1 = Vctrl2
0
40
ATTENUATION (dB)
-10
IP3 (dBm)
35
+25 C
+85 C
-55 C
30
-20
-30
-3 V
-1.8 V
-1.4 V
-0.8 V
0V
-40
Attenuators - analog - Chip
35
IP3 (dBm)
IP3 (dBm)
50
-50
25
0
5
10
15
2
20
9
16
23
30
FREQUENCY (GHz)
SINGLE TONE INPUT POWER (dBm)
Attenuation vs. Vctrl over Temperature
@ 10 GHz, Vctrl1 = Vctrl2
Attenuation vs. Input Power over Vctrl
Vctrl1 = Vctrl2
0
0
-10
-10
ATTENUATION (dB)
ATTENUATION (dB)
1
40
+25 C
+85 C
-40 C
-20
-30
-20
-30
-40
-3 V
-1.8 V
-1.4 V
-.8 V
0V
-50
-40
-3
-2.5
-2
-1.5
-1
CONTROL VOLTAGE (V)
-0.5
0
0
5
10
15
20
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
1-4
HMC712
v01.0709
Output Return Loss, Vctrl1 = Vctrl2
0
0
-10
-10
RETURN LOSS (dB)
RETURN LOSS (dB)
Input Return Loss, Vctrl1 = Vctrl2
-20
-3.0 V
-1.8 V
0.0 V
-30
-40
-20
-30
-3.0 V
-1.8 V
0.0 V
-40
2
6
10
14
18
22
26
30
2
FREQUENCY (GHz)
6
10
14
18
22
26
30
FREQUENCY (GHz)
Input IP3 vs. Input Power Over
Vctrl @ 10 GHz, Vctrl1 = Vctrl2
60
50
40
IP3 (dBm)
Attenuators - analog - Chip
1
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 5 - 30 GHz
30
20
-2.6 V
-2.2 V
-1.8 V
-1.4 V
0V
10
0
0
5
10
15
20
SINGLE TONE INPUT POWER (dBm)
Absolute Maximum Ratings
Control Voltages
RF Input Power
+30 dBm
Vctrl1
-3 to 0V @ 10 µA
Control Voltage Range
+1 to -5V
Vctrl2
-3 to 0V @ 10 µA
Channel Temperature
150 °C
Thermal Resistance
(Channel to die bottom)
64 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
1-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC712
v01.0709
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 5 - 30 GHz
1
Attenuators - analog - Chip
Outline Drawing
Die Packaging Information [1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
1. ALL DIMENSIONS ARE IN INCHES (MILLIMETERS).
2. TYPICAL BOND PAD IS .004” SQUARE.
3. TYPICAL BOND PAD SPACING IS .006” CENTER TO
CENTER EXCEPT AS NOTED.
4. BACKSIDE METALIZATION: GOLD
5. BACKSIDE METAL IS GROUND
6. BOND PAD METALIZATION: GOLD
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
1-6
HMC712
v01.0709
Attenuators - analog - Chip
1
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 5 - 30 GHz
Pad Descriptions
Pad Number
Function
1
RFIN
Description
Interface Schematic
This pad is DC coupled and matched to 50 Ohms.
A blocking capacitor is required if RF line potential
is not equal to 0V.
2
RFOUT
3
Vctrl2
Control Voltage 2
4
Vctrl1
Control Voltage 1
GND
Die bottom must be connected to RF/DC ground.
Assembly Diagram
1-7
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC712
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 5 - 30 GHz
1
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should brought as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity:
strikes.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Follow ESD precautions to protect against ESD
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pickup.
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Attenuators - analog - Chip
v01.0709
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
1-8