Joint ITU-T/IEEE Workshop on Next Generation Optical Access Systems Optical Component Technology

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Joint ITU-T/IEEE Workshop on
Next Generation Optical
Access Systems
Optical Component Technology
Review and Future Trends
David Li
CTO, Ligent Photonics
Geneva, 19-20 June 2008
International
Telecommunication
1
Outline
Introduction
Key Components in OAN
Conventional Transceiver Technologies
Challenges in 10GPON
Future Trends and Optical Integration
Summary
Geneva, 19-20 June 2008
International
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2
Optical Access Network Trends
•
Higher bandwidth/capacity technologies are
required for HDTV, IPTV, VOD, PVR, digital home, etc.
Geneva, 19-20 June 2008
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3
Passive Optical Network Structure
1550nm (if used)
2
1490nm
1
OLT
1
ONU
2 3
3
1310nm
Passive Optical
Splitter
Upstream
1260 -1360 nm
Geneva, 19-20 June 2008
For Futrue
Use
Down
Stream
1380 -1460 nm 1480 -1500 nm
Enhancement
For Futrue
Use
λ
1539 -1565 nm
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4
10GEPON Quadplexer Structure
10GEPON and 1GEPON must be able to
coexist in the existing fiber distribution
network
Geneva, 19-20 June 2008
International
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5
EPON/GPON/10GEPON Review
EPON
GPON
10GEPON
PX-10
PX-20
Class B+
Class C+
PR-30
Link
Budget
23dB
26dB
28/30dB
32/33dB
29dB
Data
rate
1.25G
1.25G
2.5G/1.2
5G
2.5G/1.2
5G
10.3G
TX Laser
FP/DFB
DFB
DFB
H DFB
H EML
H DML
RX
PD/TIA
PIN/TIA
PIN/TIA
APD/TIA
H Sen.
APD/TIA
Driver
Discrete/Integrated
Discrete
Discrete
APD+
TIA(S)+
FEC
Discrete
Discrete
Discrete
Discrete
High
High+
(OLT)
High++++
(ONU/OLT)
PA
Cost
Low
Geneva, 19-20 June 2008
Medium
Low
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6
Key Components in the OAN
Passive Optics
ƒSplitters,
Diplexer
WDM filters
1550nm
1490nm
Active Optics
ƒLaser,
Digital APD/PIN
Analog PD, SOA, Fast
Optical Switch
Geneva, 19-20 June 2008
TIA
ATC
SP
Microelectronics
ƒLaser
1310nm
Optical Port
OLT
Transceivers
Tx
LD
Rx
Rx PD
1490 nm
Optical Port
RF Overlay
WDM
Tx LD & PD
1310 nm
Data
WDM
Driver, TIA, PA, CDR, FEC
Tx LD & PD
1310 nm
Rx PD
1490 nm
Rx PD
1550 nm
Tx
LD
TIA
ATC
SP
Rx
Triplexer
DM
RF Video Rx
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7
Key Issues in EPON/GPON Transceiver
Microelectronics
ƒ
ƒ
ƒ
ƒ
ƒ
Burst mode, short response time for detection and threshold
adjustment
Large dynamic range
High sensitivity for small signal detection
Relative high speed, up to 2.5Gbit/s
Intelligence (e.g., FEC, EDC, Monitoring, etc.)
Active Optics
ƒ
ƒ
Transmit laser diodes (high power, narrow spectral width, wide
temperature, low noise, high speed, etc.)
Receive photo diodes (high sensitivity, high linearity, high SNR,
etc.)
Passive Optics
ƒ
ƒ
ƒ
Low loss
Low polarization dependence
Low temperature dependence
Operating Temperature Range and Power Consumption
Low Cost, High Performance, and High Volume
Geneva, 19-20 June 2008
International
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8
FTTH Equipment Value Chain
Opto Chip
Opto
Packaging
Optical Chip
Vendor
Optical Sub-Assembly
OSA (Optical Sub Assembly)
Module
System
Transceiver
Equipment
Laser Die
TO-Can
Packaging
BOSA
Assembly
Transceiver
Assembly
OLT & ONU
Equipment
PIN Die
APD Die
TIA
Chip
Limiting
Amplifier
Chip
Laser
Driver
Chip
OLT + ONU
ASIC
Geneva, 19-20 June 2008
Optical Interface Chip Vendor
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ASIC Vendor
Telecommunication
9
Conventional Transceiver Technologies
- Complex, robust, improving, and yet reaching limit?
¾Discrete
chips for LD, PD, lens, etc.
¾Stand-alone
TO-cans for TX & RX
¾TX,
RX and bidirectional optical
sub-assemblies based on coaxialpackages
OE Chips
¾Separate
integrated MICs for
analog and digital functions
¾Manual
testing
module assembly and
BOSA
TO-Cans
MIC Chip
Module
Filter Chip
Capital intensive,
Automated fab,
Manual processing
Capital intensive,
Automated assembly,
Manual test
Geneva, 19-20 June 2008
Labor intensive,
Manual assembly,
Manual test
Labor intensive,
Manual assembly,
ManualInternational
test
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10
Availability of 10GPON Components
Now 10GE CM transmission technologies
and 1G/2G BM technologies are mature
Challenges in 10GEPON BM components
9 Special 10G lasers to meet the
IEEE802.3av requirements
ƒ
ƒ
1577nm high power 10G EML laser for OLT
Low cost 1270nm 10G DML laser
9 10G burst mode drivers
9 10G/1G selective burst mode TIA and
post amplifier
9 10G burst mode CDR and signal
conditioner
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11
Problem for 10G Eye Pattern
3av_0804_benamram_2
10G signal is much noisy
– Electrical, Optical, Test Equipment
Geneva, 19-20 June 2008
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12
Challenges in 10GPON
Signal degradation at 10G
Link budget – 29dB
TX power – high
RX sensitivity – high
BM 1G/10G switching
OSA - Integration
Cost - low
High TX Power, High RX Sensitivity, Price
Geneva, 19-20 June 2008
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13
Optcal Module Packaging
100G
Ligent 10GPON
XFP
10G
GPON/EPON
1G
Customized Design
SFF/SFP Pigtail
100M
GBIC
SFF/SFP
or receptacle
1x9
96
98
00
02
04
06
08
Small, Pluggable, High Density, Low Power
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14
Progress on the 10GEPON Laser
Eudyna Devices,
06.02.2008
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15
Integration Platform Technologies
ce
n
a
m
for
r
e
P
&
y
t
i
l
a
ion
t
c
n
u
F
Board Level
Box Level
Pre-packaged devices
connected by fibers
Present
Geneva, 19-20 June 2008
Chips and sub-components
assembled on silicon bench,
and/or metal carriers
Next
Chip Level
Chips connected with
each other by hybrid or
monolithic integration
Future
Hybrid or
monolithical PLC
ƒInP-based
ƒSilica-based
ƒSilicon-based
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16
Basic Building Blocks for PICs
•Packaging
Challenges for Optical Integration
•Design and Fabrication
•Yield
•Coupling to Fibers
•Electrical Control
•Multi-Functionality
ƒWafer uniformity
•Thermal Management
•Complexity
ƒCoating
•Hermetic issue
•Redundancy
ƒtesting
•Low cost assembly
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17
The Dream Device:
Optical Port
Integrated Optical Transceivers based on Two-Chips
Tx LD & PD
1310 nm
WDM
LD
Rx PD
1490 nm
TIA
Optical Port
Tx LD & PD
1310 nm
Rx PD
1490 nm
WDM
CATV
Rx PD
1550 nm
PIC Chip
ATC
SP
Diplexer
Rx
MIC Chip
PIC Chip
Data
GND
Tx
DC
power
LD
TIA
Tx
ATC
SP
Rx
DM
Triplexer
Video
MIC Chip
W.P.Huang, OSA Optics Express, Vol. 14, International
2006
Geneva, 19-20 June 2008
Telecommunication
18
Summary
¾ The design and manufacturing of optical module in the
access networks follows a process from discrete
components to optical sub-assemblies and
microelectronic chips, to module assembly and test
¾ The conventional transceiver technologies based on
discrete optoelectronic chips and coaxial packaging are
still the key enabler and continue to improve
¾ The emerging technologies based on planar packaging,
hybrid/monolithic optical integration are under
development and will have significant (not immediate)
impact on the cost and performance
¾ The WDM, and other approaches are necessary for next
generation access network beyond the 10Gbps.
Geneva, 19-20 June 2008
International
Telecommunication
19
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