Hewlett-Packard’s newest silicon detector diodes were developed to meet
the requirements for receiver service in radio frequency identification
tags. These requirements include portability, small size, long life, and low
cost.
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Antenna
Antenna
Schottky
Diode
Mixer
Video
Out
Video
Out
Local
Oscillator
(a)
(b)
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Automatic vehicle identification (AVI) is one aspect of intelligent vehicle-highway
systems (IVHS). It is a good example of the use of RF/ID technology in a practical
application. For example, RFID systems are being integrated into electronic toll
collection at bridges so that tolls can be deducted from an account by using information stored in a tag mounted in the vehicle’s windshield.
One of the key requirements of these systems is that the stationary reader
(interrogator) be able to discriminate between individual tags passing the toll booth
without interference from other tags or other transmitters that may be operating at
the same frequency. Backscatter modulation technology is one method that can be
used for such an application.
A block diagram of a typical transponder (tag) for backscatter technology is shown
in Fig. 1. The interrogator (reader) sends a modulated RF signal that is received
by the tag. The Schottky diode detector demodulates the signal and transfers the
data to the digital circuits of the tag. The radar cross section of the tag is changed
by a frequency shift keying encoder and switch driver so that the reflected (backscattered) signal from the tag is modulated and ultimately detected by the reader’s
receiver antenna. Thus, communication between the tag and reader is
established.
By using backscatter technology, interference from nearby transmitters can be
avoided, since the reader controls the frequency of operation and can shift it if
nearby transmitters are operating at the same frequency. Also, the reflected signal
strength from the tag is proportional to the incident interrogator signal, so tags
outside the incident beam focus area will reflect a weaker signal that the reader
antenna can reject.
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Such a backscatter tag can have read/write capabilities that allow flexible digital
formats. It can also contain various tag information that can be used in other IVHS
applications. A specific minimum field strength is required to put the Schottky
detector diode into forward bias so that the tag does not backscatter until the
interrogator signal and message data are received, thus minimizing the power
requirements of the tag.
Backscatter
Mismatch
Antenna
Switch
Driver
Detector
Diode
Data
Encoders/
Decoders
Fig. 1. Typical transponder block diagram for backscatter RF/ID technology.
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DC Bias
Cpkg
Diode Chip
Rj = Rv
Lpkg
(a)
(b)
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function of the total current flowing through the device. Low
Cj, Rv, and Rs are desired for an efficient detector diode.
The total current I flowing through a Schottky diode is given
by:
I I sexpV bnV t
1 ,
where Is is the diode saturation current, Vb is the voltage
across the Schottky barrier, n is the ideality factor, and Vt is
the thermal voltage. The voltage across the Schottky barrier
is equal to an applied voltage Va minus any voltage drop
across the series resistance Rs, that is, Vb = Va - IRs. At low
bias levels, Rs can be neglected, so Vb Vaā.
The video resistance is Rv = dVb/dI, so for small Isā:
ąąRvĄ=ĄnVtā/āIĂ.
For the zero bias condition, Va = 0, at room temperature
with n = 1, the video resistance simplifies to:
ąąRvĄ=Ą0.026ā/āIsĂ.
By increasing Is, the video resistance of the diode at zero
bias is minimized. Is is increased by proper selection of the
metal type and the semiconductor doping. For silicon, pĆtype
generally gives a higher Is than nĆtype. However, pĆtype
silicon has higher Rs than nĆtype silicon with the same dopĆ
ing. Increasing the silicon doping to lower the Rs also inĆ
creases Cj, which degrades the detector performance. NĆtype
Schottky diodes are seen in mixer applications because of
the lower Rs and the fact that Rv can be kept low by using
high local oscillator drive levels.
An important performance characteristic used to describe
video detector diodes is voltage sensitivity, or γ. This paramĆ
eter specifies the slope of the curve of output video voltage
versus input signal power, that is:
V o P in .
Neglecting parasitic and reflection losses, voltage sensitivity
can be defined as:
(IV) ,
where β is the current sensitivity and has a theoretical value1
of 20 A/W. Using the diode equation (with ideality factor n =
1):
IV I0.026 .
Therefore,
0.52I .
For zero bias detectors, γ = 0.52ā/āIsā.
This simple analysis of a perfect detector gives a poor
approximation to the actual data on existing diodes. To
bring the analysis closer to reality, effects of diode junction
capacitance, diode series resistance, load resistance, and
reflection loss must be considered.
Diode Capacitance and Resistance. In most cases, the junction
impedance associated with Rv and Cj is much greater than
December 1995 HewlettĆPackard Journal
Rs, especially at low frequencies. However, at high frequenĆ
cies, the junction impedance is reduced so that the RF
power dissipated in Rs is comparable to that of the junction.
Incorporating the effects of the diode capacitance and resisĆ
tance on the current sensitivity,2 the voltage sensitivity for
the zero bias diode becomes:
1 0.52 I s1 2C 2jR sR v
.
where ω = 2πf, Cj is junction capacitance, Is is diode saturaĆ
tion current, Rs is the series resistance, and Rv is the junction
resistance.
Load Resistance. The diode resistance Rv at zero bias is usuĆ
ally not small compared to the load resistance RL. If the
diode is considered as a voltage source with impedance Rv
feeding the load resistance RL, the voltage sensitivity will be
reduced by the factor RLā/ā(RL + Rv), or:
2 1R LR v R L
.
For example, a typical load resistance is 100 kΩā. If Rv is
5 kΩ, then
2 1(0.952) .
Reflection Loss. Further reduction in voltage sensitivity is
caused by reflection losses in the matching circuit in which
the diode is used. In Fig. 3, the package capacitance Cpkg
and package inductance Lpkg can be used to determine the
packaged diode reflection coefficient. If this diode termiĆ
nates a 50Ω system, the reflection coefficient ρ is:
ρ Z D – 50
Z D 50
,
where ZD is a function of frequency and the package paraĆ
sitics. If there is no matching network, the voltage sensitivity
can be calculated as:
3 21 – ρ2
.
The chip, package, and circuit parameters all combine to
define an optimum voltage sensitivity for a given application.
Our design goal was to develop a diode to operate in the
frequency range used in RF/ID tags. Using the voltage sensiĆ
tivity analysis described above, we hoped to produce an
optimum, lowĆcost, manufacturable part in the shortest time
possible.
HewlettĆPackard's preeminent zero bias detector diode
(HSCHĆ3486) already provides excellent detection sensitivity
in an axially leaded glass package, particularly at high freĆ
quencies. To meet our design goals, the project team deĆ
cided to leverage the HSCHĆ3486 technology.
We chose the plastic SOTĆ23 package because of its low
manufacturing costs for highĆvolume products. Using the
SOTĆ23 package, several modifications were possible that we
hoped we could take advantage of. Before building protoĆ
type devices, we made a detailed device model for the
HSCHĆ3486. The model helped us fabricate an optimum deĆ
vice with minimum design iterations.
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Voltage Sensitivity 2 (mV/ W)
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Rs = 50
RL = 105
1 GHz
100
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10
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10–4
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Increasing Epitaxial Layer Thickness (0.2 m/div)
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Contact
Silicon
Substrate
and Epitaxy
Backside Metallization
70
(a)
Voltage Sensitivity 3 (mV/ W)
60
50
40
30
20
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10
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1
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10
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&((:7&(> &114<*) :8 94 8.2:1&9* 9-*8* ;&7.&9.438 94 8-4< 9-&9
9-* 85*(.+.(&9.43 <4:1) 89.11 '* 2*9 3 &)).9.43 <* (4:1)
:8* 9-* 24)*1 94 )*9*72.3* <-&9 574(*88 &3) )*;.(* 5&7&2@
*9*78 (4:1) '* (-&3,*) +47 +:9:7* .2574;*2*398 94 9-*
).4)*
2
3
4
5
6
7
Frequency (GHz)
8
9
10
425&7.843 4+ 9<4 ?*74 '.&8 "(-4990> ).4)*8
.,8 &3) 8-4< &(9:&1 ;419&,* 8*38.9.;.9> (425&7*) 94 9-*
(&1(:1&9*) ;&1:*8
47 (425&7.843 <.9- 9-* "@
,1&88 5&(0&,* ).4)*
., 8-4<8 γ &8 & +:3(9.43 4+ +7*6:*3(> #-* ).++*7*39
;&1:*8 4+ / !8 &3) 8 4+ 9-* 9<4 ).4)*8 (&:8* 9-*
""@ 94 574;.)* ,7*&9*7 5*7+472&3(* &9 +7*6:*3(.*8
1*88 9-&3 ? <-.1* 9-* "@
.8 8:5*7.47 &'4;* ? *(&:8* 4+ .98 8.251*7 5&(0&,.3, &3) 9*89.3, 9-*
""@ .8 2:(- 14<*7 .3 (489 9-&3 9-* "@
*<1*99@ &(0&7)8 3*<*89 8.1.(43 ?*74 '.&8 )*9*(947 ).4)*
-&8 43* 4+ 9-* '*89 57.(*5*7+472&3(* 7&9.48 43 9-* 2&70*9
%* +**1 9-&9 9-*8* ).4)*8 <.11 '*(42* &3 .39*,7&1 5&79 4+
2&3> 9&, &551.(&9.438 '*.3, )*8.,3*) 94)&> &3) <.11 '* (43@
8.)*7*) .3 +:9:7* )*8.,38 &3) 9*(-3414,> #-*> 574;.)* *=@
(*11*39 ;419&,* 8*38.9.;.9> +47 2&3> 4+ 9-* +7*6:*3(> 7&3,*8
'*.3, :8*) .3 9-* ! .3):897> &9 & ;*7> 14< (489
9-*7 2*2'*78 4+ 9-* 574/*(9 9*&2 <*7* !&> %&:,- &;.)
"&1:897. .11 >5*3 &9.3)*7 :2&7 &3) 1&3 (** &3>
49-*7 .3).;.):&18 (4397.':9*) 94 9-* 8:((*88+:1 (4251*9.43 4+
9-* 574/*(9 "5*(.&1 2*39.43 8-4:1) '* 2&)* 4+ !*2*).48
"41.8 +47 <&+*7 574(*88 )*;*1452*39 &3) 9*89.3, &9&1.&
(+** +47 5&(0&,.3, .3 "#@
&3) $> 7*)*7.(0 +47 9*89.3,
9-* 2&3> )*;.(*8 .3 9-* "#@
5&(0&,*
10
0
Voltage Sensitivity 2 (mV/ W)
HSCH-3486
10–4
&1(:1&9*) ;419&,* 8*38.9.;.9> +47 ?*74 '.&8 "(-4990>
).4)*8 -&;.3, !8 Ω &3) / 5 ! 0Ω 498
8-4< 2*&8:7*) ;&1:*8 +47 ? ? &3) ?
10
%&9843 Microwave Semiconductor Devices and Their Circuit
Applications (7&<@.11 5 #477*> &3) %-.92*7 Crystal Rectifiers # !&).&9.43
&'47&947> "*7.*8 $41 (7&<@.11 3
0
1
2
3
4
5
6
7
Frequency (GHz)
8
9
&1(:1&9*) ;419&,* 8*38.9.;.9> 4+ 9-* ""@ ?*74
'.&8 "(-4990> )*9*(947 ).4)* 498 8-4< 2*&8:7*) ;&1:*8
HSMS-2850
Voltage Sensitivity 2 (mV/ W)
Voltage Sensitivity 2 (mV/ W)
300
*(*2'*7 *<1*99@ &(0&7) 4:73&1
10
11