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HMC5879LS7
v00.0111
GaAs pHEMT MMIC 4 WATT
POWER AMPLIFIER, 12 - 16 GHz
AMPLIFIERS - LINEAR & POWER - SMT
9
Typical Applications
Features
The HMC5879LS7 is ideal for:
Saturated Output Power: +37 dBm @ 22% PAE
• Point-to-Point Radios
High Output IP3: +44 dBm
• Point-to-Multi-Point Radios
High Gain: 28 dB
• VSAT & SATCOM
DC Supply: +7V @ 2400 mA
• Military & Space
No External Matching Required
18 Lead 7x7 mm SMT Package: 49 mm2
Functional Diagram
General Description
The HMC5879LS7 is a 4 stage GaAs pHEMT MMIC
4 Watt Power Amplifier which operates between 12
and 16 GHz. The HMC5879LS7 provides 28 dB of
gain, +37 dBm of saturated output power, and 22%
PAE from a +7V supply. The HMC5879LS7 exhibits
excellent linearity and is optimized for high capacity
digital microwave radio. It is also ideal for 13.75 to 14.5
GHz Ku Band VSAT transmitters as well as SATCOM
applications.
Electrical Specifi cations
TA = +25° C, Vdd1, 2 , 3, 4 , 5, 6, 7, 8 = +7V, Idd = 2400mA [1]
Parameter
Min.
Frequency Range
Gain
24
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept
Typ.
12-16
(IP3)[2]
Total Supply Current (Idd)
34.5
Max.
Units
GHz
27
dB
0.06
dB/ °C
13
dB
13
dB
36
dBm
37
dBm
44
dBm
2400
mA
[1] Adjust Vgg between -2 to 0V to achieve Idd = 2400mA typical.
[2] Measurement taken at +7V @ 2400mA, Pout / Tone = +22 dBm
9-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC5879LS7
v00.0111
GaAs pHEMT MMIC 4 WATT
POWER AMPLIFIER, 12 - 16 GHz
Broadband Gain &
Return Loss vs. Frequency
Gain vs. Temperature
40
36
30
S21
S11
S22
10
0
28
-10
+25C
+85C
-40C
20
-20
-30
16
10
11
12
13
14
15
FREQUENCY (GHz)
16
17
18
11
13
14
15
16
17
Output Return Loss vs. Temperature
0
0
+25C
+85C
-40C
+25C
+85C
-40C
-4
RETURN LOSS (dB)
-4
RETURN LOSS (dB)
12
FREQUENCY (GHz)
Input Return Loss vs. Temperature
-8
-12
-16
-8
-12
-16
-20
-20
-24
11
12
13
14
15
16
11
17
12
13
FREQUENCY (GHz)
14
15
16
17
FREQUENCY (GHz)
P1dB vs. Temperature
P1dB vs. Supply Voltage
40
40
+25C
+85C
-40C
5V
6V
7V
38
P1dB (dBm)
38
P1dB (dBm)
9
24
36
34
32
AMPLIFIERS - LINEAR & POWER - SMT
GAIN (dB)
RESPONSE (dB)
32
20
36
34
32
30
30
12
13
14
FREQUENCY (GHz)
15
16
12
13
14
15
16
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9-2
HMC5879LS7
v00.0111
GaAs pHEMT MMIC 4 WATT
POWER AMPLIFIER, 12 - 16 GHz
Psat vs. Supply Voltage
40
38
38
Psat (dBm)
40
36
34
34
32
30
30
12
13
14
15
16
12
13
FREQUENCY (GHz)
P1dB vs. Supply Current (Idd)
15
16
15
16
Psat vs. Supply Current (Idd)
40
40
38
38
Psat (dBm)
P1dB (dBm)
14
FREQUENCY (GHz)
36
34
1600 mA
1800 mA
2000 mA
2200 mA
2400 mA
32
36
34
1600 mA
1800 mA
2000 mA
2200 mA
2400 mA
32
30
30
12
13
14
15
16
12
13
FREQUENCY (GHz)
Output IP3 vs.
Temperature, Pout/Tone = +22 dBm
Output IP3 vs.
Supply Current, Pout/Tone = +22 dBm
50
45
45
IP3 (dBm)
50
40
14
FREQUENCY (GHz)
+25C
+85C
-40C
35
40
1600 mA
1800 mA
2000 mA
2200 mA
2400 mA
35
30
30
12
13
14
FREQUENCY (GHz)
9-3
36
5V
6V
7V
+25C
+85C
-40C
32
IP3 (dBm)
AMPLIFIERS - LINEAR & POWER - SMT
9
Psat (dBm)
Psat vs. Temperature
15
16
12
13
14
15
16
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC5879LS7
v00.0111
GaAs pHEMT MMIC 4 WATT
POWER AMPLIFIER, 12 - 16 GHz
Output IP3 vs.
Supply Voltage, Pout/Tone = +22 dBm
Output IM3 @ Vdd = +5V
50
80
70
60
40
40
30
5V
6V
7V
35
50
10
0
30
12
13
14
15
16
10
12
14
16
80
70
70
60
60
50
50
40
12 GHz
13 GHz
14 GHz
15 GHz
16 GHz
20
20
22
24
26
28
24
26
28
Output IM3 @ Vdd = +7V
80
IM3 (dBc)
IM3 (dBc)
Output IM3 @ Vdd = +6V
30
18
Pout/TONE (dBm)
FREQUENCY (GHz)
40
12 GHz
13 GHz
14 GHz
15 GHz
16 GHz
30
20
10
10
0
0
10
12
14
16
18
20
22
24
26
28
10
12
14
Pout/TONE (dBm)
18
20
22
Power Compression @ 14 GHz
40
Pout (dBm), GAIN (dB), PAE (%)
40
35
30
25
20
Pout
Gain
PAE
15
10
5
0
-10
16
Pout/TONE (dBm)
Power Compression @ 13 GHz
Pout (dBm), GAIN (dB), PAE (%)
9
12 GHz
13 GHz
14 GHz
15 GHz
16 GHz
20
-7
-4
-1
2
5
INPUT POWER (dBm)
8
11
14
35
30
25
20
AMPLIFIERS - LINEAR & POWER - SMT
IM3 (dBc)
IP3 (dBm)
45
Pout
Gain
PAE
15
10
5
0
-10
-7
-4
-1
2
5
8
11
14
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9-4
HMC5879LS7
v00.0111
GaAs pHEMT MMIC 4 WATT
POWER AMPLIFIER, 12 - 16 GHz
Reverse Isolation vs. Temperature
0
35
-10
30
-20
ISOLATION (dB)
40
25
20
Pout
Gain
PAE
15
+25C
+85C
-40C
-30
-40
-50
10
-60
5
-70
0
-10
-80
-7
-4
-1
2
5
8
11
11
14
12
13
Gain & Power vs.
Supply Current @ 14 GHz
15
16
17
Gain & Power vs.
Supply Voltage @ 14 GHz
50
Gain (dB), P1dB (dBm), Psat (dBm)
50
Gain
P1dB
Psat
45
40
35
30
25
20
1600
14
FREQUENCY (GHz)
INPUT POWER (dBm)
45
Gain
P1dB
Psat
40
35
30
25
20
1800
2000
2200
2400
5
5.5
Idd (mA)
6
6.5
7
Vdd (V)
Power Dissipation
20
18
POWER DISSIPATION (W)
Gain (dB), P1dB (dBm), Psat (dBm)
AMPLIFIERS - LINEAR & POWER - SMT
9
Pout (dBm), GAIN (dB), PAE (%)
Power Compression @ 15 GHz
16
14
12
10
12 GHz
13 GHz
14 GHz
15 GHz
16 GHz
8
6
4
2
0
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
INPUT POWER (dBm)
9-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC5879LS7
v00.0111
GaAs pHEMT MMIC 4 WATT
POWER AMPLIFIER, 12 - 16 GHz
Drain Bias Voltage (Vdd1 - Vdd8)
+8V
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
2400
Gate Bias Voltage (Vgg1, Vgg2)
-3V to 0V
+5.0
RF Input Power (RFIN)
+27 dBm
+6.0
2400
Channel Temperature
150 °C
+7.0
2400
Continuous Pdiss (T= 85 °C)
(derate 280 mW/°C above 85 °C)
18.20 W
Thermal Resistance
(channel to ground paddle)
3.57 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
ESD Sensitivity (HBM)
Class 0, passed 150V
Note: Amplifi er will operate over full voltage ranges shown
above. Vgg adjusted to achieve Idd = 2400 mA.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
9
AMPLIFIERS - LINEAR & POWER - SMT
Absolute Maximum Ratings
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
Package Marking
HMC5879LS7
ALUMINA, WHITE
Gold over Nickel
MSL3
H5879
XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9-6
HMC5879LS7
v00.0111
GaAs pHEMT MMIC 4 WATT
POWER AMPLIFIER, 12 - 16 GHz
Pin Descriptions
AMPLIFIERS - LINEAR & POWER - SMT
9
9-7
Pin Number
Function
1-4
Vdd8, Vdd6
Vdd4, Vdd2
10-13
Vdd1, Vdd3
Vdd5, Vdd7
Description
Interface Schematic
Drain bias for the amplifier. External bypass capacitors of
100pF, 0.01uF, and 4.7uF are required.
5, 9
Vgg1, Vgg2
Gate control for amplifier. External bypass capacitors of
100pF, 0.01uF, and 4.7uF are required. The pins are
connected to each other internally. Either pin 5 or pin 9 can
be used for gate bias.
6, 14, 15, 18
GND
These pin and the exposed ground paddle must be
connected to RF/DC ground.
7
RFIN
This pin is DC coupled and matched
to 50 Ohms over the operating frequency range.
8, 17
N/C
These pins are not connected internally, all data
shown herein was measured with these pins
connected to RF/DC ground externally.
16
RFOUT
This pin is DC coupled and matched to 50 Ohms.
Application Circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC5879LS7
v00.0111
GaAs pHEMT MMIC 4 WATT
POWER AMPLIFIER, 12 - 16 GHz
Evaluation PCB
List of Materials for Evaluation PCB EVAL01-HMC5879LS7 [1]
Item
Description
J1, J2
“K” Connector, SRI
J5, J6
DC Pin
C1 - C6, C20, C21,
C23, C35
100 pF Capacitor, 0402 Pkg.
C7 - C12, C19, C25,
C26, C34
10000 pF Capacitor, 0603 Pkg
C13 - C18, C29 C30, C31, C37
4.7uF Capacitor, Case A Pkg.
U1
HMC5879LS7 Amplifier
PCB [2]
128997-2 Eval Board
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
AMPLIFIERS - LINEAR & POWER - SMT
9
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9-8