30 nm In[subscript 0.7]Ga[subscript 0.3]As inverted-type
HEMTs with reduced gate leakage current for logic
applications
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Citation
Tae-Woo Kim, Dae-Hyun Kim, and J.A. del Alamo. “30 nm
In0.7Ga0.3As Inverted-Type HEMTs with reduced gate leakage
current for logic applications.” Electron Devices Meeting (IEDM),
2009 IEEE International. 2009. 1-4. ©2010 Institute of Electrical
and Electronics Engineers.
As Published
http://dx.doi.org/10.1109/IEDM.2009.5424317
Publisher
Institute of Electrical and Electronics Engineers
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Final published version
Accessed
Thu May 26 06:25:43 EDT 2016
Citable Link
http://hdl.handle.net/1721.1/59453
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Detailed Terms
30 nm In0.7Ga0.3As Inverted-Type HEMTs with Reduced Gate
Leakage Current for Logic Applications
Tae-Woo Kim, Dae-Hyun Kim and Jesús A. del Alamo
Massachusetts Institute of Technology (MIT), Cambridge, MA 02139, U.S.A, E-mail: twkim78@mit.edu
Abstract
We have fabricated 30 nm In0.7Ga0.3As Inverted-Type
HEMTs with outstanding logic performance, scalability and
high frequency characteristics. The motivation for this work is
the demonstration of reduced gate leakage current in the
Inverted HEMT structure. The fabricated devices show
excellent Lg scalability down to 30 nm. Lg = 30 nm devices
have been fabricated with exhibit gm = 1.27 mS/μm, S = 83
mV/dec, DIBL = 118 mV/V, ION/IOFF = 4 x 104, all at 0.5 V.
More significantly, the removal of dopants from the barrier
suppresses forward gate leakage current by over 100X when
compared with equivalent normal HEMTs. The Lg = 30 nm
devices also feature record high-frequency characteristics for
an inverted-type HEMT design with fT = 500 GHz and fmax =
550 GHz.
Introduction
As conventional Si CMOS scaling approaches the end of the
roadmap, III-V based FETs appear as an increasingly viable
alternative to continue transistor size scaling [1-2]. A great deal
of the excitement about the prospects of III-Vs comes from the
excellent logic characteristics that have recently been
demonstrated in InGaAs HEMTs with gate lengths as small as
30 nm [3]. While being quite far in structure from an ideal
logic III-V MOSFET, the HEMT has demonstrated to be an
excellent model system to study fundamental device physics
and technology issues and to provide well calibrated and
relatively parasitic-free device results to support the
development of simulators that would allows us to chart the
future of a III-V logic technology [4].
In this regard, there is great value in continuing to push the
scaling of HEMTs so as to explore significant device physics
issues in the relevant dimensional range. It is well known that
lateral scaling demands harmonious vertical scaling. Reduction
of insulator thickness results in greatly increased gate leakage
current [5]. This is what currently limits the reduction in
HEMT lateral dimensions. Suppressing this, would allow us to
scale the HEMT below 30 nm while preserving excellent logic
characteristics. In this work, we demonstrated an inverted-type
HEMT design that mitigates forward gate leakage current by
over two orders of magnitude and yields excellent logic
characteristics. This device architecture is also directly
amenable to the incorporation of a high-K gate dielectric in the
gate stack which should allow much further scaling.
Process Technology
Fig. 1 shows a cross section of epitaxial layer structure used
in this work and a schematic of the fabricated device structure.
97-4244-5640-6/09/$26.00 ©2009 IEEE
Our device features an InAlAs/InGaAs double-heterostructure
design where the upper Si-doping is located further away from
the channel than in conventional designs (8 nm vs. about 3
nm). As a result, after a triple recess process [5], the dopant
layer is eliminated in the intrinsic device resulting in a dopantfree InAlAs barrier. This gives rise to a conduction band shape
for the barrier that, for the same sheet carrier concentration, is
more rectangular than in the conventional design, as shown in
Fig. 2. This should significantly suppress gate leakage current,
especially in the forward gate bias regime.
Device fabrication follows closely our previous device
demonstrations [6]. We use a three-step recess process that
yields a barrier thickness in the intrinsic region, tins, of about 4
nm. In this work, we have devices with Lg values in the range
of 30 to 130 nm. Fig. 3 shows STEM images of a fabricated 30
nm device. The side-recess-length (Lside) was set at 80 nm.
Fig. 1 Heterostructure and schematic of InGaAs Inverted
HEMT. It features delta-doping in the top InAlAs layer that is
etched away in the intrinsic device
DC and Logic Characteristics
Fig. 4 shows output characteristics of an inverted HEMT
with Lg of 30 nm. The device exhibits excellent pinch-off and
saturation characteristics. Fig. 5 shows the subtreshold and
gate current characteristics of a 30 nm I-HEMT against those
of a previously demonstrated normal In0.7Ga0.3As HEMT with
a similar channel design, barrier thickness (4 nm), gate length,
and Lside value. The inverted HEMT displays comparable
subthreshold characteristics to the normal HEMT with a
subthreshold swing of 83 mV/dec and DIBL of 118 mV/V at
VDS = 0.5 V. Remarkably, the inverted HEMT exhibits much
lower values of OFF-state current and gate leakage current,
especially in the forward regime where a reduction of over
100X is achieved.
20.1.1
IEDM09-483
0.8
Fig. 6 shows subthreshold characteristics for devices with Lg
from 130 nm down to 30 nm at VDS = 0.5 V, together with gate
leakage current (IG). The devices show harmonious scaling
with very small VT roll off in this dimensional range.
VGS=+0.25V for N-HEMT
0.4
0.6
ID [mA/μm]
Inverted HEMT
Normal HEMT
VGS=+0.22V for I-HEMT
VGS=0.3V
2.0
0.3
CB Profiles [eV]
0.1
1.0
0.0
-0.1
0.5
VGS=0.1V
0.4
VGS=0V
VGS=-0.1V
0.2
VGS=-0.2V
0.0
0.0
0.2
0.4
0.6
0.8
1.0
VDS [V]
18
Electron density [x 10 /cm ]
1.5
0.2
VGS=0.2V
-0.2
Fig. 4 Output characteristics of 30 nm InGaAs Inverted HEMT.
3
-0.3
0
10
20
30
10
0.0
40
Fig. 2 Self-consistent Schrodinger-Poisson calculation of
conduction band profile and electron density in Inverted
HEMT and conventional HEMT at the same ns = 1.3 x
1012/cm3.
ID & IG [A/μm]
Vertical depth [nm]
-3
10
-4
10
-5
VDS = 0.5 V
ID
VDS = 50mV
Normal In0.7Ga0.3As HEMTs
VDS = 0.5 V
Lg = 30 nm
10
-6
10
-7
10
-8
10
-9
10
Inverted-type In0.7Ga0.3As HEMTs
VDS = 50mV
tins = 4 nm
tch = 13 nm
Lside = 80 nm
VDS = 50mV
IG
VDS = 0.5 V
IG
-10
-0.50
-0.25
0.00
0.25
VGS [V]
Fig. 5 Subthreshold and IG characteristics of 30 nm InGaAs
Inverted HEMT and normal HEMT. Off-state ID and IG
characteristics are greatly suppressed in Inverted HEMT
because of the rectangular shape of the barrier.
Fig. 3 Cross-section STEM images of inverted HEMT with LG
= 30 nm. The barrier thickness, tins is estimated to be 4 nm.
[TEM analysis was carried out at NCNT and UNIST in Korea.]
IEDM09-484
Fig. 7 shows ION, IOFF and corresponding ION/IOFF ratio as a
function of Lg for both types of devices at VDS = 0.5 V [7].
The inverted HEMT shows much lower values of IOFF, and a
significantly higher ION/IOFF ratio across the entire
dimensional rage when compared with the rectangular HEMT.
At Lg=30 nm, the ION/IOFF ratio is ~ 4 x 104. A trade-off of the
inverted design is also evident in this figure. ION for the
inverted HEMTs is slightly lower than for normal HEMTs.
This comes from an increase in source resistance (Rs) which
is a consequence of a reduction of the sheet carrier
concentration in the extrinsic portion of the device as a result
of having the upper Si-doping plane further away from the
channel. This can be more quantitatively observed in Fig. 8
which graphs the resistance measured though the gate-current
20.1.2
0.40
1E-3
1E-3
30nm
40nm
60nm
130nm
1E-4
1E-6
1E-6
1E-7
1E-7
1E-8
1E-8
1E-9
VDS=0.5V
1E-10
-0.6
-0.4
-0.2
0.0
1E-9
ION
-3
10
10
6
10
-4
-5
5
10
-6
10
4
10
-7
10
ION/IOFF
ION & IOFF [A/μm]
10
10
-8
10
3
10
-9
10
IOFF
-10
10
20
40
60
80
VDS = 0.5 V
100
120
Rsh =70 ohm/sq
RS=0.225 ohm mm
40
80
120
160
Microwave and Logic Performance
7
Inverted-type InGaAs HEMTs
Normal InGaAs HEMTs
0.24
Fig. 8 Measured Rs* as a function of Lg through the gate
current injection technique. Inverted HEMT shows a higher
source resistance and sheet resistance of the channel under
the gate.
Fig. 6 Subthreshold and IG characteristics for various values IHEMTs with different values of Lg at VDS = 0.5 V. There is a
slight negative shift of VT as Lg scales down to 30 nm.
-2
0.28
Lg [nm]
VGS [V]
10
0.32
0
1E-10
0.4
0.2
Rsh =100 ohm/sq
RS=0.27 ohm mm
0.20
1E-5
IG [A/μm]
ID [A/μm]
1E-5
1E-4
VDS=0.5V
Normal In0.7Ga0.3As HEMT
0.36
*
injection technique, Rs*, as a function of gate length [8]. The
source resistance Rs can be extracted by linear extrapolation
to zero Lg. The extracted Rs of I-HEMT is 0.27 Ω.mm, in
contrast with 0.22 Ω.mm for the normal HEMT. Further
improvement in ION can be obtained through optimization of
the epitaxial design to achieve lower Rs.
Resistnace (Rs ) [ohm.mm]
Inverted-type In0.7Ga0.3As HEMT
2
10
140
Lg [nm]
Fig. 7 ION, IOFF and ION/IOFF ratio vs. Lg for both InGaAs
HEMTs. The Inverted HEMT shows significantly improved
ION/IOFF ratio at all gate lengths.
Microwave performance was characterized from 0.5 to 40
GHz. On-wafer open and short patterns were used to subtract
pad capacitances and inductances from the measured device
S-parameters. Fig. 9 plots the fT and fmax as a function of VGS
at VDS = 0.8 V for Lg=30 nm Inverted and normal HEMTs.
Excellent values of fT = 500 GHz and fmax = 550 GHz have
been obtained for the I-HEMT. These are the highest values
of fT and fmax ever reported in an Inverted HEMT. fT is lower
than in the normal HEMT but fmax is significantly higher.
This is due to improved output conductance (go)
characteristics. In order to understand the somehow reduced
fT of the inverted HEMT, Fig. 10 shows extrinsic (gm,ext) and
intrinsic peak transconductance (gmi) which is extracted from
S-parameters after removal of source and drain resistance. gmi
for the Inverted HEMT is lower than that of normal HEMT.
This comes from somehow poorer transport in the channel
which also manifests itself through a lower electron mobility
in the epitaxial structure (μe ~ 9,800 vs. 11,000 cm2/V.s in the
normal HEMT). This is a known drawback of the inverted
HEMT design with arises from increased interface roughness
of the reverse InGaAs/InAlAs interface [9]. Improved
epitaxial growth techniques should mitigate this problem.
To identify the significance of the results obtained in this
work, we have benchmarked the logic performance of our
devices against advanced Si CMOS technologies. Fig. 11
summarizes the subthreshold swing against Lg for our
inverted HEMT together with normal HEMTs, as well as
advanced Si CMOS. Excellent electrostatic integrity is
evident. A similar result is obtained for DIBL. We have also
performed a rigorous comparison of the logic performance of
our inverted and normal HEMTs with Lg = 30 nm and stateof-the-art 65 nm Si CMOS which has a similar gate length [3,
5]. Fig. 12 plots ION against Ileak characteristics at 0.5 V. Ileak
20.1.3
IEDM09-485
2
Inverted HEMT : μn,Hall = 9,800 cm /V-s
3.2
takes into account the forward gate leakage current and it is a
more appropriate figure of merit for devices that suffer from
significant gate leakage [5]. We find that at an Ileak of 100
nA/μm, 30 nm Inverted HEMT exhibit 29% higher current
drive (ION) than 65 nm High Performance (HP) CMOS
technology with Lg = 35 nm and 20 % higher current drive
(ION) than normal HEMT with Lg = 30 nm.
700
gmi & gm,ext [S/mm]
2.0
gm,ext
1.6
VDS=0.5V
100
Gate Length [nm]
Fig. 10 Intrinsic transconductance (gmi) and extrinsic
transconductance (gm,ext) as a function of gate length.
180
Si FETs (IEDM)
Inverted HEMT
Normal HEMT
160
140
120
100
80
60
10
100
Gate Length [nm]
Fig. 11 Subthreshold swing of Inverted and Normal InGaAs
HEMTs as a function of Lg, together with those of advanced Si
nFETs.
-3
x 10
0.5
Inverted H E M T
N orm al HE M T
VDD = 0.5 V
InGaAs normal HEMTs
Lg = 30 nm
0.4
600
ION [A/μm]
fT
500
fT & fmax [GHz]
gmi
10
References
S. Datta et al., IEDM, p. 763, 2005.
K. M. Lau et al., IEDM, p. 723, 2008.
D.-H. Kim et al.., IPRM, p. 132 , 2009.
N. Neophytou et al., IEEE TED, p. 1377, 2009.
D.-H. Kim et al., IEEE TED, p. 2546 , 2008.
D.-H. Kim et al., IEEE EDL, p. 830 , 2008.
D.-H. Kim et al., IEEE TED, p. 2606, 2007.
D. R. Greenberg et al., IEEE TED, p. 1304, 1996.
N. Pan et al., Applied Physics Letters, p. 71, 1991.
Acknowledgements
This work was sponsored by Intel Corporation and FCRPMSD at MIT. Epitaxial heterostructures were supplied by
MBE Technology. Device fabrication took place at the
facilities of the Microsystems Technology Laboratories
(MTL), the Scanning Electron Beam Lithography (SEBL) and
the Nano-Structures Laboratory (NSL) at MIT.
2.4
1.2
Subthreshold Slope [mV/dec]
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
Normal HEMT μn,Hall = 11,000 cm /V-s
2.8
Conclusions
We have demonstrated 30 nm In0.7Ga0.3As Inverted
HEMTs with outstanding logic performance, scalability and
high frequency characteristics. In particular, 30 nm devices
exhibit gm,max = 1.27 mS/μm, S = 83 mV/dec, DIBL = 118
mV/V, ION/IOFF = 4 × 104, at VDS = 0.5 V, and fT = 500 and
fmax = 550 GHz at VDS = 0.8 V. The removal of dopants from
the barrier suppresses forward gate leakage current by over
100X. This works suggest that III-V designs similar to an
inverted HEMT but with a high-K dielectric as gate insulator
have potential for scaling to very small dimensions.
2
fT
f m ax
400
0.3
InGaAs Inverted-type HEMT
Lg = 30 nm
65 nm CMOS
Intel High Performance
Lg = 35 nm
0.2
300
fm ax
0.1
65 nm CMOS
Intel Low Power
Lg = 55 nm
200
100
0
-0.3
-0.2
-0.1
0.0
0.0
-9
10
Lg = 30 nm
V D S =0.8V
0.1
V G S [V]
0.2
0.3
0.4
0.5
Fig. 9 Bias dependence of fT and fmax for Lg = 30 nm devices
at VDS = 0.8 V.
IEDM09-486
10
-8
10
-7
-6
10
Ileak [A/μm]
Fig. 12 ION against Ileak for 30 nm InGaAs HEMTs, and both
low-power and high-performance 65 nm CMOS, all at VDD =
0.5 V.
20.1.4