81 GHz to 86 GHz,
E-Band I/Q Upconverter
HMC8119
Data Sheet
FEATURES
GENERAL DESCRIPTION
Conversion loss: 10 dB typical
Sideband rejection: 22 dBc typical
Input power for 1 dB compression (P1dB): 16 dBm typical
Input third-order intercept (IP3): 24 dBm typical
Input second-order intercept (IP2): −5 dBm typical
6× local oscillator (LO) leakage at RFOUT: −23 dBm typical
RF return loss: 12 dB typical
LO return loss: 20 dB typical
Die size: 3.601 mm × 1.609 mm × 0.05 mm
The HMC8119 is an integrated E-band gallium arsenide (GaAs)
pseudomorphic (pHEMT) monolithic microwave integrated
circuit (MMIC), in-phase/quadrature (I/Q) upconverter chip
that operates from 81 GHz to 86 GHz. The HMC8119 provides
a small signal conversion loss of 10 dB with 22 dBc of sideband
rejection across the frequency band. The device uses an image
rejection mixer that is driven by a 6× LO multiplier. Differential
I and Q mixer inputs are provided. The inputs can be driven
with differential I and Q baseband waveforms for direct conversion applications. Alternatively, the inputs can be driven using
an external 90° hybrid and two external 180° hybrids for singlesideband applications. All data includes the effect of a 1 mil
gold wire wedge bond on the intermediate frequency (IF) ports.
APPLICATIONS
E-band communication systems
High capacity wireless backhaul
Test and measurement
FUNCTIONAL BLOCK DIAGRAM
3
12
13
14
15
16
17
18
19
20
21
LOIN
11
VGX2
10
VGX3
9
VDMULT
8
VDAMP1
IFIN
7
VGAMP
6
IFIP
VDAMP2
4
VGMIX
5
6×
24
23
1
IFQN
HMC8119
IFQP
22
13098-001
RFOUT
2
Figure 1.
Rev. A
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Technical Support
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HMC8119
Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Lower Sideband (LSB) Selected, IF = 1000 MHz ................... 16
Applications ....................................................................................... 1
Lower Sideband (LSB) Selected, IF = 2000 MHz ................... 18
General Description ......................................................................... 1
Spurious Performance, USB...................................................... 20
Functional Block Diagram .............................................................. 1
Spurious Performance, LSB ...................................................... 21
Revision History ............................................................................... 2
Theory of Operation ...................................................................... 22
Specifications..................................................................................... 3
Applications Information .............................................................. 23
Absolute Maximum Ratings ............................................................ 4
Biasing Sequence ........................................................................ 23
Thermal Resistance ...................................................................... 4
Single Sideband Upconversion ................................................. 23
ESD Caution .................................................................................. 4
Assembly Diagram ......................................................................... 25
Pin Configuration and Function Descriptions ............................. 5
Interface Schematics..................................................................... 6
Mounting and Bonding Techniques for Millimeterwave GaAs
MMICs ............................................................................................. 26
Typical Performance Characteristics ............................................. 7
Handling Precautions ................................................................ 26
Upper Sideband (USB) Selected, IF = 500 MHz ...................... 7
Mounting ..................................................................................... 26
Return Loss Performance ............................................................ 9
Wire Bonding .............................................................................. 26
Upper Sideband (USB) Selected, IF = 1000 MHz .................. 10
Outline Dimensions ....................................................................... 27
Upper Sideband (USB) Selected, IF = 2000 MHz .................. 12
Ordering Guide .......................................................................... 27
Lower Sideband (LSB) Selected, IF = 500 MHz ..................... 14
REVISION HISTORY
2/16—Revision A: Initial Version
Rev. A | Page 2 of 27
Data Sheet
HMC8119
SPECIFICATIONS
TA = 25°C, IF = 500 MHz, VGMIX = −1 V, VDAMPx = 4 V, VDMULT = 1.5 V, LO = 2 dBm, upper sideband selected (USB). Measurements
performed as an upconverter with external 90° and 180° hybrids at the IF ports, unless otherwise noted.
Table 1.
Parameter
OPERATING CONDITIONS
RF Frequency Range
LO Frequency Range
IF Frequency Range
LO Drive Range
PERFORMANCE
Conversion Loss
Sideband Rejection
Input Power for 1 dB Compression (P1dB)
Input Third-Order Intercept (IP3)
Input Second-Order Intercept (IP2)
6× LO Leakage at RFOUT
RF Return Loss
LO Return Loss
IF Return Loss
POWER SUPPLY
Supply Current
IDAMP 1
IDMULT 2
1
2
Test Conditions/Comments
Min
Typ
81
11.83
0
2
10
22
16
24
−5
−23
12
20
25
Under LO drive
175
80
Max
Unit
86
14.33
10
8
GHz
GHz
GHz
dBm
13
dB
dBc
dBm
dBm
dBm
dBm
dB
dB
dB
−19
mA
mA
Adjust VGAMP from −2 V to 0 V to achieve the total quiescent current, IDAMP = IDAMP1 + IDAMP2 = 175 mA.
Adjust VGX2 and VGX3 from −2 V to 0 V to achieve the quiescent current, IDMULT = 1 mA to 2 mA. Refer to the Applications Information section for more information.
Rev. A | Page 3 of 27
HMC8119
Data Sheet
ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
Table 2.
Parameter
Drain Bias Voltage
VDAMP1, VDAMP2
VDMULT
Gate Bias Voltage
VGAMP
VGX2, VGX3
VGMIX
LO Input Power
Maximum Junction Temperature
(to Maintain 1 Million Hours Mean
Time to Failure (MTTF))
Storage Temperature Range
Operating Temperature Range
Rating
Table 3. Thermal Resistance
Package Type
24-Pad Bare Die [CHIP]
4.5 V
3V
1
−3 V to 0 V
−3 V to 0 V
−3 V to 0 V
10 dBm
175°C
θJC1
73.7
Unit
°C/W
Based on ABLEBOND® 84-1LMIT as die attach epoxy with thermal
conductivity of 3.6 W/mK.
ESD CAUTION
−65°C to +150°C
−55°C to +85°C
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Rev. A | Page 4 of 27
Data Sheet
HMC8119
16
17
18
19
20
21
GND
GND
VDMULT
15
GND
14
LOIN
13
GND
12
VGX2
11
GND
10
VGX3
9
GND
8
VDAMP1
IFIN
7
GND
3
6
VGAMP
IFIP
GND
4
VDAMP2
5
GND
VGMIX
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
HMC8119
RFOUT
GND
24
23
22
2
IFQN
1
IFQP
13098-002
GND
TOP VIEW
(Not to Scale)
Figure 2. Pad Configuration
Table 4. Pad Function Descriptions
Pad No.
1, 2
Mnemonic
IFQP, IFQN
3, 4
IFIN, IFIP
5, 7, 9, 11, 13,
15, 17, 19, 21,
22, 24
6
8, 12
GND
10
14
16, 18
20
23
Die Bottom
VGMIX
VDAMP2,
VDAMP1
VGAMP
VDMULT
VGX3, VGX2
LOIN
RFOUT
GND
Description
Positive and Negative IF Q Inputs. These pads are dc-coupled. When operation to dc is not required, block
these pads externally using a series capacitor with a value chosen to pass the necessary frequency range.
For operation to dc, these pads must not source or sink more than 3 mA of current or die malfunction and
die failure may result (see Figure 3).
Negative and Positive IF I Inputs. These pads are dc-coupled. When operation to dc is not required, block
these pads externally using a series capacitor with a value chosen to pass the necessary frequency range.
For operation to dc, these pads must not source or sink more than 3 mA of current or die malfunction and
die failure may result (see Figure 3).
Ground Connect (See Figure 4).
Gate Voltage for the FET Mixer (See Figure 5).
Power Supply Voltage for the First and the Second Stage LO Amplifier (See Figure 5).
Gate Voltage for the First and the Second Stage LO Amplifier (See Figure 5).
Power Supply Voltage for the Multiplier (See Figure 5).
Gate Voltage for the Multiplier (See Figure 5).
Local Oscillator Input. This pad is dc-coupled and matched to 50 Ω (see Figure 6).
RF Output. This pad is ac-coupled and matched to 50 Ω (see Figure 7).
Ground. The die bottom must be connected to RF/dc ground (see Figure 4).
Rev. A | Page 5 of 27
HMC8119
Data Sheet
INTERFACE SCHEMATICS
IFIN, IFIP,
IFQN, IFQP
Figure 3. IFIP, IFIN, IFQN, IFQP Interface
13098-004
GND
Figure 6. LOIN Interface
RFOUT
Figure 4. GND Interface
Figure 7. RFOUT Interface
VDAMP1 , VDAMP2 ,
VDMULT
13098-005
100Ω
VGMIX, VGAMP,
VGX2, VGX3
13098-007
200Ω
13098-006
13098-003
LOIN
Figure 5. VGMIX, VDAMP1, VDAMP2, VDMULT, VGAMP, VGX2, VGX3 Interface
Rev. A | Page 6 of 27
Data Sheet
HMC8119
TYPICAL PERFORMANCE CHARACTERISTICS
UPPER SIDEBAND (USB) SELECTED, IF = 500 MHz
0
0
–4
–6
–8
–10
–12
–14
82.0
82.5
83.0
83.5
84.0
84.5
85.0
85.5
86.0
–8
–10
–12
–16
81.0
0
0
–5
SIDEBAND REJECTION (dBc)
TA = +25°C
TA = +85°C
TA = –55°C
–15
–20
–25
–30
–35
–40
83.0
83.5
84.0
84.5
85.0
85.5
86.0
LO
LO
LO
LO
LO
LO
LO
–10
–15
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–20
–25
–30
–35
–40
83.0
83.5
84.0
84.5
85.0
85.5
86.0
–50
81.0
Figure 9. Sideband Rejection vs. RF Frequency at Various Temperatures,
IFIN = −8 dBm, LO = 2 dBm, IF = 500 MHz, USB
28
26
26
24
24
22
22
IP3 (dBm)
28
TA = +25°C
TA = +85°C
TA = –55°C
16
83.5
84.0
84.5
85.0
85.5
86.0
RF FREQUENCY (GHz)
13098-010
12
83.0
84.0
84.5
85.0
LO
LO
LO
LO
LO
LO
LO
16
12
82.5
83.5
18
14
82.0
83.0
85.5
86.0
20
14
81.5
82.5
Figure 12. Sideband Rejection vs. RF Frequency at Various LO Powers,
IFIN = −8 dBm, IF = 500 MHz, USB
30
18
82.0
RF FREQUENCY (GHz)
30
20
81.5
13098-012
82.5
Figure 10. Input IP3 vs. RF Frequency at Various Temperatures,
IFIN = 5 dBm, LO = 2 dBm, IF = 500 MHz, USB
10
81.0
81.5
82.0
82.5
83.0
83.5
84.0
84.5
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
85.0
85.5 86.0
RF FREQUENCY (GHz)
Figure 13. Input IP3 vs. RF Frequency at Various LO Powers,
IFIN = 5 dBm, IF = 500 MHz, USB
Rev. A | Page 7 of 27
13098-013
82.0
13098-009
81.5
RF FREQUENCY (GHz)
10
81.0
82.5
–45
–45
–50
81.0
82.0
Figure 11. Conversion Gain vs. RF Frequency at Various LO Powers,
IFIN = −8 dBm, IF = 500 MHz, USB
–5
–10
81.5
RF FREQUENCY (GHz)
Figure 8. Conversion Gain vs. RF Frequency at Various Temperatures,
IFIN = −8 dBm, LO = 2 dBm, IF = 500 MHz, USB
SIDEBAND REJECTION (dBc)
–6
13098-011
81.5
RF FREQUENCY (GHz)
IP3 (dBm)
–4
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–14
13098-008
–16
81.0
LO
LO
LO
LO
LO
LO
LO
–2
TA = +25°C
TA = +85°C
TA = –55°C
CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
–2
Data Sheet
0
0
–2
–2
–4
–4
–6
–6
IP2 (dBm)
–8
–10
–12
–14
82.0
82.5
83.0
83.5
84.0
84.5
85.0
85.5
86.0
–16
81.0
13098-014
81.5
RF FREQUENCY (GHz)
0
0
–5
TA = +25°C
TA = +85°C
TA = –55°C
83.0
83.5
84.0
84.5
LEAKAGE (dBm)
–20
–25
–30
–30
–40
–40
–45
–45
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
RF FREQUENCY (GHz)
–50
81.0
18
16
14
12
10
8
3
4
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
RF FREQUENCY (GHz)
13098-016
TA = +25°C
TA = +85°C
TA = –55°C
82.0
82.0
82.5
83.0
83.5
84.0
84.5
RF FREQUENCY (GHz)
20
81.5
81.5
85.0
85.5 86.0
Figure 18. 6× LO Leakage at RFOUT vs. RF Frequency at Various LO Powers,
IFIN = 5 dBm, IF = 500 MHz, USB
Figure 15. 6× LO Leakage at RFOUT vs. RF Frequency at Various
Temperatures, IFIN = 5 dBm, LO= 2 dBm, IF = 500 MHz, USB
2
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–25
–35
82.0
85.5 86.0
–20
–35
81.5
85.0
LO
LO
LO
LO
LO
LO
LO
–15
13098-015
LEAKAGE (dBm)
82.5
–10
–15
P1dB (dBm)
82.0
Figure 17. Input IP2 vs. RF Frequency at Various LO Powers,
IFIN = 5 dBm, IF = 500 MHz, USB
–5
–10
81.5
RF FREQUENCY (GHz)
Figure 14. Input IP2 vs. RF Frequency at Various Temperatures,
IFIN = 5 dBm, LO = 2 dBm, IF = 500 MHz, USB
0
81.0
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
13098-017
–14
–50
81.0
LO
LO
LO
LO
LO
LO
LO
–10
TA = +25°C
TA = +85°C
TA = –55°C
–12
–16
81.0
–8
13098-018
IP2 (dBm)
HMC8119
Figure 16. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 2 dBm, IF = 500 MHz, USB
Rev. A | Page 8 of 27
Data Sheet
HMC8119
RETURN LOSS PERFORMANCE
0
0
IFIP
IFIN
IFQN
IFQP
–5
–10
RETURN LOSS (dB)
–10
–15
–20
–25
–30
–15
–20
–25
–30
–35
–35
–40
0
2
4
6
8
10
12
14
16
IF FREQUENCY (GHz)
–45
11.0
13098-019
–40
11.5
12.0
12.5
13.0
13.5
14.0
14.5
15.0
LO FREQUENCY (GHz)
Figure 19. IF Return Loss vs. IF Frequency, LO = 2 dBm at 12 GHz
Figure 22. LO Return Loss vs. LO Frequency at Various LO Powers
0
0
LO
LO
LO
LO
LO
–5
–5
RETURN LOSS (dB)
–10
RETURN LOSS (dB)
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
13098-022
RETURN LOSS (dB)
LO
LO
LO
LO
LO
LO
LO
–5
–15
–20
–25
–30
= 0dBm
= 2dBm
= 4dBm
= 6dBm
= 8dBm
–10
–15
–20
–35
12.0
12.5
13.0
13.5
14.0
14.5
15.0
LO FREQUENCY (GHz)
Figure 20. LO Return Loss vs. LO Frequency at Various Temperatures,
LO = 2 dBm
TA = +25°C
TA = +85°C
TA = –55°C
RETURN LOSS (dB)
–10
–15
–20
81.5
82.0
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
RF FREQUENCY (GHz)
13098-021
–25
–30
81.0
81.5
82.0
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
RF FREQUENCY (GHz)
Figure 23. RF Return Loss vs. RF Frequency at Various LO Powers,
RFIN = −10 dBm
0
–5
–30
81.0
Figure 21. RF Return Loss vs. RF Frequency at Various Temperatures,
RFIN = −10 dBm, LO = 2 dBm at 12 GHz
Rev. A | Page 9 of 27
13098-023
11.5
13098-020
–45
11.0
–25
TA = +25°C
TA = +85°C
TA = –55°C
–40
HMC8119
Data Sheet
UPPER SIDEBAND (USB) SELECTED, IF = 1000 MHz
0
0
–4
–6
–8
–10
–12
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
–8
–10
–12
–16
81.0
0
0
–5
SIDEBAND REJECTION (dBc)
–10
–15
–20
–25
–30
–35
–40
83.0
83.5
84.0
84.5
85.0
85.5 86.0
LO
LO
LO
LO
LO
LO
LO
–10
–15
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–20
–25
–30
–35
–40
–45
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
–50
81.0
Figure 25. Sideband Rejection vs. RF Frequency at Various Temperatures,
IFIN = −8 dBm, LO = 2 dBm, IF = 1000 MHz, USB
28
26
26
24
24
22
22
IP3 (dBm)
28
TA = +25°C
TA = +85°C
TA = –55°C
16
LO
LO
LO
LO
LO
LO
LO
18
16
12
12
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
RF FREQUENCY (GHz)
13098-027
14
82.0
83.0
83.5
84.0
84.5
85.0
85.5 86.0
20
14
81.5
82.5
Figure 28. Sideband Rejection vs. RF Frequency at Various LO Powers,
IFIN = −8 dBm, IF = 1000 MHz, USB
30
18
82.0
RF FREQUENCY (GHz)
30
20
81.5
10
81.0
81.5
82.0
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
82.5
83.0
83.5
84.0
84.5
85.0
85.5
86.0
RF FREQUENCY (GHz)
Figure 29. Input IP3 vs. RF Frequency at Various LO Powers,
IFIN = 5 dBm, IF = 1000 MHz, USB
Figure 26. Input IP3 vs. RF Frequency at Various Temperatures,
IFIN = 5 dBm, LO = 2 dBm, IF = 1000 MHz, USB
Rev. A | Page 10 of 27
13098-030
82.0
13098-026
81.5
RF FREQUENCY (GHz)
10
81.0
82.5
13098-029
–45
–50
81.0
82.0
Figure 27. Conversion Gain vs. RF Frequency at Various LO Powers,
IFIN = −8 dBm, IF = 1000 MHz, USB
–5
TA = +25°C
TA = +85°C
TA = –55°C
81.5
RF FREQUENCY (GHz)
Figure 24. Conversion Gain vs. RF Frequency at Various Temperatures,
IFIN = −8 dBm, LO = 2 dBm, IF = 1000 MHz, USB
SIDEBAND REJECTION (dBc)
–6
13098-028
82.0
13098-025
81.5
RF FREQUENCY (GHz)
IP3 (dBm)
–4
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–14
–14
–16
81.0
LO
LO
LO
LO
LO
LO
LO
–2
TA = +25°C
TA = +85°C
TA = –55°C
CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
–2
HMC8119
–2
–2
–4
–4
–6
–6
–8
TA = +25°C
TA = +85°C
TA = –55°C
–10
–12
–12
–14
–14
–16
81.0
81.5
82.0
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
RF FREQUENCY (GHz)
–16
81.0
0
0
–5
TA = +25°C
TA = +85°C
TA = –55°C
LEAKAGE (dBm)
–25
–30
–40
–45
–45
83.0
83.5
84.0
84.5
85.0
85.5 86.0
RF FREQUENCY (GHz)
Figure 31. 6× LO Leakage at RFOUT vs. RF Frequency at Various
Temperatures, IFIN = 5 dBm, LO = 2 dBm, IF = 1000 MHz, USB
18
16
12
10
TA = +25°C
TA = +85°C
TA = –55°C
4
2
81.5
82.0
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
RF FREQUENCY (GHz)
13098-033
P1dB (dBm)
14
6
84.5
85.0
85.5 86.0
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–50
81.0
81.5
82.0
82.5
83.0
83.5
84.0
84.5
85.0
85.5
86.0
RF FREQUENCY (GHz)
Figure 34. 6× LO Leakage at RFOUT vs. RF Frequency at Various
LO Powers, IFIN = 5 dBm, IF = 1000 MHz, USB
20
8
84.0
–30
–35
82.5
83.5
–25
–40
82.0
83.0
–20
–35
13098-032
LEAKAGE (dBm)
–15
–20
0
81.0
LO
LO
LO
LO
LO
LO
LO
–10
–15
81.5
82.5
Figure 33. Input IP2 vs. RF Frequency at Various LO Powers,
IFIN = 5 dBm, IF = 1000 MHz, USB
–5
–50
81.0
82.0
RF FREQUENCY (GHz)
Figure 30. Input IP2 vs. RF Frequency at Various Temperatures,
IFIN = 5 dBm, LO = 2 dBm, IF = 1000 MHz, USB
–10
81.5
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
Figure 32. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 2 dBm, IF = 1000 MHz, USB
Rev. A | Page 11 of 27
13098-035
–10
LO
LO
LO
LO
LO
LO
LO
–8
13098-034
0
IP2 (dBm)
0
13098-031
IP2 (dBm)
Data Sheet
HMC8119
Data Sheet
UPPER SIDEBAND (USB) SELECTED, IF = 2000 MHz
0
–2
CONVERSION GAIN (dB)
–4
–6
–8
–10
–12
–14
–12
–14
–18
82.0
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
RF FREQUENCY (GHz)
–20
81.0
0
0
–5
SIDEBAND REJECTION (dBc)
–10
–15
–20
–25
–30
–35
–40
83.0
83.5
84.0
84.5
85.0
85.5 86.0
LO
LO
LO
LO
LO
LO
LO
–10
–15
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–20
–25
–30
–35
–40
–45
82.0
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
–50
81.0
13098-037
81.5
RF FREQUENCY (GHz)
Figure 36. Sideband Rejection vs. RF Frequency at Various Temperatures,
IFIN = −8 dBm, LO = 2 dBm, IF = 2000 MHz, USB
81.5
82.0
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
RF FREQUENCY (GHz)
Figure 39. Sideband Rejection vs. RF Frequency at Various LO Powers,
IFIN = −8 dBm, IF = 2000 MHz, USB
34
34
TA = +25°C
TA = +85°C
TA = –55°C
30
32
30
28
26
26
IP3 (dBm)
28
24
22
24
20
18
18
16
16
82.0
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
RF FREQUENCY (GHz)
13098-038
20
81.5
LO
LO
LO
LO
LO
LO
LO
22
14
81.0
81.5
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
82.0
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
RF FREQUENCY (GHz)
Figure 40. Input IP3 vs. RF Frequency at Various LO Powers,
IFIN = 5 dBm, IF = 2000 MHz, USB
Figure 37. Input IP3 vs. RF Frequency at Various Temperatures,
IFIN = 5 dBm, LO = 2 dBm, IF = 2000 MHz, USB
Rev. A | Page 12 of 27
13098-041
32
14
81.0
82.5
13098-040
–45
–50
81.0
82.0
Figure 38. Conversion Gain vs. RF Frequency at Various LO Powers,
IFIN = −8 dBm, IF = 2000 MHz, USB
–5
TA = +25°C
TA = +85°C
TA = –55°C
81.5
RF FREQUENCY (GHz)
Figure 35. Conversion Gain vs. RF Frequency at Various Temperatures,
IFIN = −8 dBm, LO = 2 dBm, IF = 2000 MHz, USB
SIDEBAND REJECTION (dBc)
–8
–18
81.5
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–10
–16
–20
81.0
IP3 (dBm)
–6
–16
13098-036
CONVERSION GAIN (dB)
–4
LO
LO
LO
LO
LO
LO
LO
–2
TA = +25°C
TA = +85°C
TA = –55°C
13098-039
0
Data Sheet
HMC8119
0
0
–2
–2
TA = +25°C
TA = +85°C
TA = –55°C
–4
–4
–8
–10
–10
–12
–12
–14
–14
81.5
82.0
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
RF FREQUENCY (GHz)
–16
81.0
0
0
–5
TA = +25°C
TA = +85°C
TA = –55°C
LEAKAGE (dBm)
–25
–30
–40
–45
–45
83.0
83.5
84.0
84.5
85.0
85.5 86.0
RF FREQUENCY (GHz)
Figure 42. 6× LO Leakage at RFOUT vs. RF Frequency at Various
Temperatures, IFIN = 5 dBm, LO = 2 dBm, IF = 2000 MHz, USB
18
16
12
10
TA = +25°C
TA = +85°C
TA = –55°C
4
2
81.5
82.0
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
RF FREQUENCY (GHz)
13098-044
P1dB (dBm)
14
6
84.5
85.0
85.5 86.0
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–50
81.0
81.5
82.0
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
RF FREQUENCY (GHz)
Figure 45. 6× LO Leakage at RFOUT vs. RF Frequency at Various LO
Powers, IFIN = 5 dBm, IF = 1000 MHz, USB
20
8
84.0
–30
–35
82.5
83.5
–25
–40
82.0
83.0
–20
–35
13098-043
LEAKAGE (dBm)
–15
–20
0
81.0
LO
LO
LO
LO
LO
LO
LO
–10
–15
81.5
82.5
Figure 44. Input IP2 vs. RF Frequency at Various LO Powers,
IFIN = 5 dBm, IF = 2000 MHz, USB
–5
–50
81.0
82.0
RF FREQUENCY (GHz)
Figure 41. Input IP2 vs. RF Frequency at Various Temperatures,
IFIN = 5 dBm, LO = 2 dBm, IF = 2000 MHz, USB
–10
81.5
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
Figure 43. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 2 dBm, IF = 2000 MHz, USB
Rev. A | Page 13 of 27
13098-046
–16
81.0
LO
LO
LO
LO
LO
LO
LO
–8
13098-045
IP2 (dBm)
–6
13098-042
IP2 (dBm)
–6
HMC8119
Data Sheet
LOWER SIDEBAND (LSB) SELECTED, IF = 500 MHz
0
0
–4
–6
–8
–10
–12
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
–8
–10
–12
–16
81.0
0
0
–5
SIDEBAND REJECTION (dBc)
–10
–15
–20
–25
–30
–35
–40
83.0
83.5
84.0
84.5
85.0
85.5 86.0
LO
LO
LO
LO
LO
LO
LO
–10
–15
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–20
–25
–30
–35
–40
–45
82.0
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
–50
81.0
13098-048
81.5
RF FREQUENCY (GHz)
Figure 47. Sideband Rejection vs. RF Frequency at Various Temperatures,
IFIN = −8 dBm, LO = 2 dBm, IF = 500 MHz, LSB
81.5
82.0
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
RF FREQUENCY (GHz)
Figure 50. Sideband Rejection vs. RF Frequency at Various LO Powers,
IFIN = −8 dBm, IF = 500 MHz, LSB
34
TA = +25°C
TA = +85°C
TA = –55°C
32
30
30
28
26
26
IP3 (dBm)
28
24
22
22
18
18
16
16
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
RF FREQUENCY (GHz)
13098-049
20
82.0
Figure 48. Input IP3 vs. RF Frequency at Various Temperatures,
IFIN = 5 dBm, LO = 2 dBm, IF = 500 MHz, LSB
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
24
20
81.5
LO
LO
LO
LO
LO
LO
LO
32
14
81.0
81.5
82.0
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
RF FREQUENCY (GHz)
Figure 51. Input IP3 vs. RF Frequency at Various LO Powers,
IFIN = 5 dBm, IF = 500 MHz, LSB
Rev. A | Page 14 of 27
13098-052
34
14
81.0
82.5
13098-051
–45
–50
81.0
82.0
Figure 49. Conversion Gain vs. RF Frequency at Various LO Powers,
IFIN = −8 dBm, IF = 500 MHz, LSB
–5
TA = +25°C
TA = +85°C
TA = –55°C
81.5
RF FREQUENCY (GHz)
Figure 46. Conversion Gain vs. RF Frequency at Various Temperatures,
IFIN = −8 dBm, LO = 2 dBm, IF = 500 MHz, LSB
SIDEBAND REJECTION (dBc)
–6
13098-050
82.0
13098-047
81.5
RF FREQUENCY (GHz)
IP3 (dBm)
–4
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–14
–14
–16
81.0
LO
LO
LO
LO
LO
LO
LO
–2
TA = +25°C
TA = +85°C
TA = –55°C
CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
–2
HMC8119
–2
–2
–4
–4
–6
–6
–8
TA = +25°C
TA = +85°C
TA = –55°C
–10
–12
–12
–14
–14
–16
81.0
81.5
82.0
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
RF FREQUENCY (GHz)
–16
81.0
0
0
–5
TA = +25°C
TA = +85°C
TA = –55°C
LEAKAGE (dBm)
–20
–25
–30
83.5
84.0
84.5
LO
LO
LO
LO
LO
LO
LO
–40
–45
–45
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
Figure 53. 6× LO Leakage at RFOUT vs. RF Frequency at Various
Temperatures, IFIN = 5 dBm, IF = 500 MHz, LSB
TA = +25°C
TA = +85°C
TA = –55°C
16
14
12
10
8
6
4
82.0
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
RF FREQUENCY (GHz)
13098-100
2
81.5
–50
81.0
81.5
82.0
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
RF FREQUENCY (GHz)
Figure 56. 6× LO Leakage at RFOUT vs. RF Frequency at Various LO
Powers, IFIN = 5 dBm, IF = 500 MHz, LSB
20
18
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–30
–35
82.0
85.5 86.0
–25
–40
81.5
85.0
–20
–35
13098-054
LEAKAGE (dBm)
83.0
–15
RF FREQUENCY (GHz)
P1dB (dBm)
82.5
–10
–15
0
81.0
82.0
Figure 55. Input IP2 vs. RF Frequency at Various LO Powers,
IFIN = 5 dBm, IF = 500 MHz, LSB
–5
–50
81.0
81.5
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
RF FREQUENCY (GHz)
Figure 52. Input IP2 vs. RF Frequency at Various Temperatures,
IFIN = 5 dBm, LO = 2 dBm, IF = 500 MHz, LSB
–10
LO
LO
LO
LO
LO
LO
LO
Figure 54. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 2 dBm, IF = 500 MHz, LSB
Rev. A | Page 15 of 27
13098-057
–10
–8
13098-056
0
IP2 (dBm)
0
13098-053
IP2 (dBm)
Data Sheet
HMC8119
Data Sheet
LOWER SIDEBAND (LSB) SELECTED, IF = 1000 MHz
0
0
–4
–6
–8
–10
–12
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
–8
–10
–12
–16
81.0
0
0
–5
SIDEBAND REJECTION (dBc)
–10
–15
–20
–25
–30
–35
–40
83.0
83.5
84.0
84.5
85.0
85.5 86.0
LO
LO
LO
LO
LO
LO
LO
–10
–15
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–20
–25
–30
–35
–40
–45
82.0
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
–50
81.0
13098-059
81.5
RF FREQUENCY (GHz)
Figure 58. Sideband Rejection vs. RF Frequency at Various Temperatures,
IFIN = −8 dBm, LO = 2 dBm, IF = 1000 MHz, LSB
81.5
82.0
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
RF FREQUENCY (GHz)
Figure 61. Sideband Rejection vs. RF Frequency at Various LO Powers,
IFIN = −8 dBm, IF = 1000 MHz, LSB
34
34
TA = +25°C
TA = +85°C
TA = –55°C
30
32
30
28
26
26
IP3 (dBm)
28
24
22
24
22
20
18
18
16
16
81.5
82.0
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
RF FREQUENCY (GHz)
13098-060
20
Figure 59. Input IP3 vs. RF Frequency at Various Temperatures,
IFIN = 5 dBm, LO = 2 dBm, IF = 1000 MHz, LSB
14
81.0
LO
LO
LO
LO
LO
LO
LO
81.5
82.0
82.5
83.0
83.5
84.0
84.5
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
85.0
85.5 86.0
RF FREQUENCY (GHz)
Figure 62. Input IP3 vs. RF Frequency at Various LO Powers,
IFIN = 5 dBm, IF = 1000 MHz, LSB
Rev. A | Page 16 of 27
13098-063
32
14
81.0
82.5
13098-062
–45
–50
81.0
82.0
Figure 60. Conversion Gain vs. RF Frequency at Various LO Powers,
IFIN = −8 dBm, IF = 1000 MHz, LSB
–5
TA = +25°C
TA = +85°C
TA = –55°C
81.5
RF FREQUENCY (GHz)
Figure 57. Conversion Gain vs. RF Frequency at Various Temperatures,
IFIN = −8 dBm, LO = 2 dBm, IF = 1000 MHz, LSB
SIDEBAND REJECTION (dBc)
–6
13098-061
82.0
13098-058
81.5
RF FREQUENCY (GHz)
IP3 (dBm)
–4
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–14
–14
–16
81.0
LO
LO
LO
LO
LO
LO
LO
–2
TA = +25°C
TA = +85°C
TA = –55°C
CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
–2
HMC8119
–2
–2
–4
–4
–6
–6
–8
TA = +25°C
TA = +85°C
TA = –55°C
–10
–12
–12
–14
–14
–16
81.0
81.5
82.0
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
RF FREQUENCY (GHz)
–16
81.0
0
0
–5
TA = +25°C
TA = +85°C
TA = –55°C
LEAKAGE (dBm)
–25
–30
–40
–45
–45
83.0
83.5
84.0
84.5
85.0
85.5 86.0
RF FREQUENCY (GHz)
Figure 64. 6× LO Leakage at RFOUT vs. RF Frequency at Various
Temperatures, IFIN = 5 dBm, LO = 2 dBm, IF = 1000 MHz, LSB
18
16
12
10
TA = +25°C
TA = +85°C
TA = –55°C
4
2
81.5
82.0
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
RF FREQUENCY (GHz)
13098-066
P1dB (dBm)
14
6
84.5
85.0
85.5 86.0
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–50
81.0
81.5
82.0
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
RF FREQUENCY (GHz)
Figure 67. 6× LO Leakage at RFOUT vs. RF Frequency at Various
LO Powers, IFIN = 5 dBm, IF = 1000 MHz, LSB
20
8
84.0
–30
–35
82.5
83.5
–25
–40
82.0
83.0
–20
–35
13098-065
LEAKAGE (dBm)
–15
–20
0
81.0
LO
LO
LO
LO
LO
LO
LO
–10
–15
81.5
82.5
Figure 66. Input IP2 vs. RF Frequency at Various LO Powers,
IFIN = 5 dBm, IF = 1000 MHz, LSB
–5
–50
81.0
82.0
RF FREQUENCY (GHz)
Figure 63. Input IP2 vs. RF Frequency at Various Temperatures,
IFIN = 5 dBm, LO = 2 dBm, IF = 1000 MHz, LSB
–10
81.5
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
Figure 65. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 2 dBm, IF = 1000 MHz, LSB
Rev. A | Page 17 of 27
13098-068
–10
LO
LO
LO
LO
LO
LO
LO
–8
13098-067
0
IP2 (dBm)
0
13098-064
IP2 (dBm)
Data Sheet
HMC8119
Data Sheet
LOWER SIDEBAND (LSB) SELECTED, IF = 2000 MHz
0
0
–4
–6
–8
–10
–12
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
–8
–10
–12
–16
81.0
0
0
–5
SIDEBAND REJECTION (dBc)
–10
–15
–20
–25
–30
–35
–40
83.0
83.5
84.0
84.5
85.0
85.5 86.0
LO
LO
LO
LO
LO
LO
LO
–10
–15
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–20
–25
–30
–35
–40
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
–50
81.0
Figure 69. Sideband Rejection vs. RF Frequency at Various Temperatures,
IFIN = −8 dBm, LO = 2 dBm, IF = 2000 MHz, LSB
81.5
82.0
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
RF FREQUENCY (GHz)
13098-073
82.0
13098-070
81.5
RF FREQUENCY (GHz)
Figure 72. Sideband Rejection vs. RF Frequency at Various LO Powers,
IFIN = −8 dBm, IF = 2000 MHz, LSB
34
34
TA = +25°C
TA = +85°C
TA = –55°C
30
32
30
28
26
26
IP3 (dBm)
28
24
22
24
20
18
18
16
16
82.0
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
RF FREQUENCY (GHz)
13098-071
20
81.5
Figure 70. Input IP3 vs. RF Frequency at Various Temperatures,
IFIN = 5 dBm, LO = 2 dBm, IF = 2000 MHz, LSB
LO
LO
LO
LO
LO
LO
LO
22
14
81.0
81.5
82.0
82.5
83.0
83.5
84.0
84.5
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
85.0
85.5 86.0
RF FREQUENCY (GHz)
Figure 73. Input IP3 vs. RF Frequency at Various LO Powers,
IFIN = 5 dBm, IF = 2000 MHz, LSB
Rev. A | Page 18 of 27
13098-074
32
14
81.0
82.5
–45
–45
–50
81.0
82.0
Figure 71. Conversion Gain vs. RF Frequency at Various LO Powers,
IFIN = −8 dBm, IF = 2000 MHz, LSB
–5
TA = +25°C
TA = +85°C
TA = –55°C
81.5
RF FREQUENCY (GHz)
Figure 68. Conversion Gain vs. RF Frequency at Various Temperatures,
IFIN = −8 dBm, LO = 2 dBm, IF = 2000 MHz, LSB
SIDEBAND REJECTION (dBc)
–6
13098-072
82.0
13098-069
81.5
RF FREQUENCY (GHz)
IP3 (dBm)
–4
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–14
–14
–16
81.0
LO
LO
LO
LO
LO
LO
LO
–2
TA = +25°C
TA = +85°C
TA = –55°C
CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
–2
Data Sheet
HMC8119
0
0
–2
–2
TA = +25°C
TA = +85°C
TA = –55°C
–4
–4
–6
–10
–10
–12
–12
–14
–14
81.5
82.0
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
RF FREQUENCY (GHz)
–16
81.0
0
0
–5
TA = +25°C
TA = +85°C
TA = –55°C
LEAKAGE (dBm)
–25
–30
–40
–45
–45
83.0
83.5
84.0
84.5
85.0
85.5 86.0
RF FREQUENCY (GHz)
Figure 75. 6× LO Leakage at RFOUT vs. RF Frequency at Various
Temperatures, IFIN = 5 dBm, IF = 2000 MHz, LSB
18
16
14
12
10
TA = +25°C
TA = +85°C
TA = –55°C
6
4
82.0
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
RF FREQUENCY (GHz)
13098-077
2
81.5
84.0
84.5
85.0
85.5 86.0
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–50
81.0
81.5
82.0
82.5
83.0
83.5
84.0
84.5
85.0
85.5 86.0
RF FREQUENCY (GHz)
Figure 78. 6× LO Leakage at RFOUT vs. RF Frequency at Various
LO Powers, IFIN = 5 dBm, IF = 2000 MHz, LSB
20
8
83.5
–30
–35
82.5
83.0
–25
–40
82.0
82.5
–20
–35
13098-076
LEAKAGE (dBm)
–15
–20
0
81.0
LO
LO
LO
LO
LO
LO
LO
–10
–15
81.5
82.0
Figure 77. Input IP2 vs. RF Frequency at Various LO Powers,
IFIN = 5 dBm, IF = 2000 MHz, LSB
–5
–50
81.0
81.5
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
RF FREQUENCY (GHz)
Figure 74. Input IP2 vs. RF Frequency at Various Temperatures,
IFIN = 5 dBm, LO = 2 dBm, IF = 2000 MHz, LSB
–10
LO
LO
LO
LO
LO
LO
LO
Figure 76. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 2 dBm, IF = 2000 MHz, LSB
Rev. A | Page 19 of 27
13098-079
–16
81.0
P1dB (dBm)
–8
13098-078
IP2 (dBm)
–8
13098-075
IP2 (dBm)
–6
HMC8119
Data Sheet
SPURIOUS PERFORMANCE, USB
M × N Spurious Output, RF = 85 GHz
TA = 25°C, VGMIX = −1 V, VDAMPx = 4 V, VDMULT = 1.5 V, LO = 2 dBm.
IF = 500 MHz at IFIN = 5 dBm, LO = 14.083 GHz at LOIN =
2 dBm.
Mixer spurious products are measured in dBc from the RF
output power level. Spur values are (M × IF) + (N × LO). N/A
means not applicable.
M × N Spurious Outputs, RF = 82 GHz
IF = 500 MHz at IFIN = 5 dBm, LO = 13.583 GHz at LOIN =
2 dBm.
M × IF
0
1
2
3
4
5
0
N/A
N/A
N/A
N/A
N/A
N/A
1
N/A
N/A
N/A
N/A
N/A
N/A
2
N/A
N/A
N/A
N/A
N/A
N/A
N × LO
3
N/A
N/A
N/A
N/A
N/A
N/A
4
N/A
N/A
N/A
N/A
N/A
N/A
5
N/A
N/A
N/A
N/A
N/A
N/A
6
22.1
0.00
37.7
54.5
59.5
58.6
IF = 1000 MHz at IFIN = 5 dBm, LO = 13.5 GHz at LOIN =
2 dBm.
M × IF
0
1
2
3
4
5
0
N/A
N/A
N/A
N/A
N/A
N/A
1
N/A
N/A
N/A
N/A
N/A
N/A
2
N/A
N/A
N/A
N/A
N/A
N/A
N × LO
3
N/A
N/A
N/A
N/A
N/A
N/A
4
N/A
N/A
N/A
N/A
N/A
N/A
5
N/A
N/A
N/A
N/A
N/A
N/A
6
22.8
0.00
31.6
32.5
32.1
31.6
M × IF
0
1
2
3
4
5
1
N/A
N/A
N/A
N/A
N/A
N/A
2
N/A
N/A
N/A
N/A
N/A
N/A
N × LO
3
N/A
N/A
N/A
N/A
N/A
N/A
4
N/A
N/A
N/A
N/A
N/A
N/A
5
N/A
N/A
N/A
N/A
N/A
N/A
1
N/A
N/A
N/A
N/A
N/A
N/A
2
N/A
N/A
N/A
N/A
N/A
N/A
N × LO
3
N/A
N/A
N/A
N/A
N/A
N/A
4
N/A
N/A
N/A
N/A
N/A
N/A
5
N/A
N/A
N/A
N/A
N/A
N/A
6
15.8
0.00
38.3
60.5
59.7
60.8
IF = 1000 MHz at IFIN = 5 dBm, LO = 14 GHz at LOIN =
2 dBm.
M × IF
IF = 2000 MHz at IFIN = 5 dBm, LO = 13.333 GHz at LOIN =
2 dBm.
0
N/A
N/A
N/A
N/A
N/A
N/A
M × IF
0
1
2
3
4
5
0
N/A
N/A
N/A
N/A
N/A
N/A
0
1
2
3
4
5
0
N/A
N/A
N/A
N/A
N/A
N/A
1
N/A
N/A
N/A
N/A
N/A
N/A
2
N/A
N/A
N/A
N/A
N/A
N/A
N × LO
3
N/A
N/A
N/A
N/A
N/A
N/A
4
N/A
N/A
N/A
N/A
N/A
N/A
5
N/A
N/A
N/A
N/A
N/A
N/A
6
15.7
0.00
32.5
31.7
29.7
30.2
IF = 2000 MHz at IFIN = 5 dBm, LO = 13.833 GHz at LOIN =
2 dBm.
M × IF
6
29.7
0.00
31.5
30.5
29.5
28.9
Rev. A | Page 20 of 27
0
1
2
3
4
5
0
N/A
N/A
N/A
N/A
N/A
N/A
1
N/A
N/A
N/A
N/A
N/A
N/A
2
N/A
N/A
N/A
N/A
N/A
N/A
N × LO
3
N/A
N/A
N/A
N/A
N/A
N/A
4
N/A
N/A
N/A
N/A
N/A
N/A
5
N/A
N/A
N/A
N/A
N/A
N/A
6
17.2
0.00
30.4
29.7
30
28.6
Data Sheet
HMC8119
SPURIOUS PERFORMANCE, LSB
M × N Spurious Outputs, RF = 85 GHz
TA = 25°C, VGMIX = −1 V, VDAMPx = 4 V, VDMULT = 1.5 V, LO = 2 dBm.
IF = 500 MHz at IFIN = 5 dBm, LO = 14.25 GHz at LOIN =
2 dBm.
Mixer spurious products are measured in dBc from the RF
output power level. Spur values are (M × IF) − (N × LO). N/A
means not applicable.
M × N Spurious Outputs, RF = 82 GHz
IF = 500 MHz at IFIN = 5 dBm, LO = 13.75 GHz at LOIN =
2 dBm.
M × IF
0
1
2
3
4
5
0
N/A
63.4
N/A
N/A
N/A
N/A
1
64.4
N/A
N/A
N/A
N/A
N/A
2
N/A
N/A
N/A
N/A
N/A
N/A
N × LO
3
54.2
N/A
N/A
N/A
N/A
N/A
4
N/A
N/A
N/A
N/A
N/A
N/A
5
N/A
N/A
N/A
N/A
N/A
N/A
M × IF
6
19.4
0.00
38.4
59
61.3
61.4
IF = 1000 MHz at IFIN = 5 dBm, LO = 13.833 GHz at LOIN =
2 dBm.
M × IF
0
1
2
3
4
5
0
N/A
N/A
N/A
N/A
N/A
N/A
1
N/A
N/A
N/A
N/A
N/A
N/A
2
N/A
N/A
N/A
N/A
N/A
N/A
N × LO
3
N/A
N/A
N/A
N/A
N/A
N/A
4
N/A
N/A
N/A
N/A
N/A
N/A
5
N/A
N/A
N/A
N/A
N/A
N/A
6
17.2
0.00
42.2
60.1
62
58.7
IF = 2000 MHz at IFIN = 5 dBm, LO = 14 GHz at LOIN =
2 dBm.
M × IF
0
1
2
3
4
5
0
N/A
N/A
N/A
N/A
N/A
N/A
1
N/A
N/A
N/A
N/A
N/A
N/A
2
N/A
N/A
N/A
N/A
N/A
N/A
N × LO
3
N/A
N/A
N/A
N/A
N/A
N/A
4
N/A
N/A
N/A
N/A
N/A
N/A
5
N/A
N/A
N/A
N/A
N/A
N/A
0
1
2
3
4
5
0
N/A
63.45
N/A
N/A
N/A
N/A
1
56.9
N/A
N/A
N/A
N/A
N/A
2
N/A
N/A
N/A
N/A
N/A
N/A
N × LO
3
57.3
N/A
N/A
N/A
N/A
N/A
4
N/A
N/A
N/A
N/A
N/A
N/A
5
N/A
N/A
N/A
N/A
N/A
N/A
6
19.5
0.00
38.8
61.4
61.8
59.2
IF = 1000 MHz at IFIN = 5 dBm, LO = 14.333 GHz at LOIN =
2 dBm.
M × IF
0
1
2
3
4
5
0
N/A
N/A
N/A
N/A
N/A
N/A
1
N/A
N/A
N/A
N/A
N/A
N/A
2
N/A
N/A
N/A
N/A
N/A
N/A
N × LO
3
N/A
N/A
N/A
N/A
N/A
N/A
4
N/A
N/A
N/A
N/A
N/A
N/A
5
N/A
N/A
N/A
N/A
N/A
N/A
6
17.1
0.00
42.5
59.6
58.9
59.9
IF = 2000 MHz at IFIN = 5 dBm, LO = 14.5 GHz at LOIN =
2 dBm.
M × IF
6
17.2
0.00
49.3
55.9
65.2
64.4
Rev. A | Page 21 of 27
0
1
2
3
4
5
0
N/A
N/A
N/A
N/A
N/A
N/A
1
N/A
N/A
N/A
N/A
N/A
N/A
2
N/A
N/A
N/A
N/A
N/A
N/A
N × LO
3
N/A
N/A
N/A
N/A
N/A
N/A
4
N/A
N/A
N/A
N/A
N/A
N/A
5
N/A
N/A
N/A
N/A
N/A
N/A
6
18.7
0.00
49.7
60.2
60.6
63.2
HMC8119
Data Sheet
THEORY OF OPERATION
The HMC8119 is a GaAs I/Q upconverter with an integrated
LO buffer and 6× multiplier. See Figure 79 for a functional
block diagram of the circuit architecture. The 6× multiplier
allows the use of a lower frequency range LO input signal,
typically between 11.83 GHz and 14.33 GHz. The 6× multiplier
is implemented using a cascade of 3× and 2× multipliers. LO buffer
amplifiers are included on chip to allow a typical LO drive level
VDAMP2
IFIP
of only 2 dBm for full performance. The LO path feeds a
quadrature splitter followed by on-chip baluns that drive the
I and Q mixer cores. The mixer cores comprise singly balanced
passive mixers. The RF outputs of the I and Q mixers are then
summed through an on-chip Wilkinson power combiner and
reactively matched to provide a single-ended 50 Ω output signal
at the RFOUT pad.
VGAMP
VDAMP1
VDMULT
VGX3
VGX2
LOIN
IFIN
X2
X3
VGMIX
RFOUT
IFQN
13098-080
NOTES
1. AC COUPLING, MATCHING ELEMENTS,
AND GND BOND PADS NOT ILLUSTRATED .
IFQP
Figure 79. Upconverter Circuit Architecture
Rev. A | Page 22 of 27
Data Sheet
HMC8119
APPLICATIONS INFORMATION
BIASING SEQUENCE
SINGLE SIDEBAND UPCONVERSION
The HMC8119 uses several amplifier and multiplier stages in
the LO signal path. The active stages all use depletion mode
pseudomorphic high electron mobility transistors (pHEMTs).
To ensure transistor damage does not occur, use the following
power-up bias sequence:
A typical single-sideband upconversion circuit is shown in
Figure 80. For single-sideband upconversions, an external 90°
hybrid splits the IF signal into quadrature terms. Then 180°
hybrids or baluns transfer differential signals to the I and Q
input pairs. Use an optional bias tee network to allow the
application of small dc offsets on the IFIP, IFIN, IFQP, and
IFQN input pads. By applying dc offsets to the I/Q mixer cores,
the 6× LO to RF leakage can be somewhat improved. However,
it is important to current limit the applied dc bias to avoid sourcing
or sinking more than ±3 mA of bias current. Depending on the
bias sources used, it may be prudent to add series resistance to
ensure the applied bias current does not exceed ±3 mA. For
applications not requiring enhanced LO suppression, omit the
bias tee and then dc couple the I/Q inputs to the 180° hybrids.
1.
2.
3.
4.
5.
Apply a −2 V bias to VGAMP, VGX2, and VGX3.
Apply a −1 V bias to VGMIX.
Apply 4 V to VDAMP1 and VDAMP2, and apply 1.5 V to VDMULT.
Adjust VGAMP between −2 V and 0 V to achieve a total
amplifier drain current (IDAMP1 + IDAMP2) of 175 mA.
Apply a LO input signal and adjust VGX2 and VGX3 between
−2 V and 0 V to achieve 80 mA of drain current on VDMULT.
To power down the HMC8119, follow the reverse procedure.
For additional guidance on general bias sequencing, see the
MMIC Amplifier Biasing Procedure application note.
VDAMP1 , VDAMP2
+
VGMIX
+
120pF
0.01µF
4.7µF
0.01µF
120pF
120pF
0.01µF
4.7µF
0.01µF
120pF
120pF
0.01µF
OPTIONAL
+
+
4.7µF
4.7µF
4.7µF
VGAMP
VDMULT
VGX3, VGX2
LOIN
IP BIAS
3
12
13
14
15
16
17
18
19
20
21
LOIN
11
VGX2
10
VGX3
9
VDMULT
8
VDAMP1
IFIN
7
VGAMP
6
IFIP
VDAMP2
4
VGMIX
5
180°
HYBRID
+
IN BIAS
X6
IFIN
QN BIAS
RFOUT
2
180°
HYBRID
QP BIAS
24
23
1
IFQN
HMC8119
IFQP
22
13098-081
90°
HYBRID
RF OUTPUT
Figure 80. Single-Sideband Upconversion Configuration with Optional DC Bias Tee Network for Enhanced LO Suppression
Rev. A | Page 23 of 27
HMC8119
Data Sheet
Zero IF Direct Conversion
outputs. Most DACs are designed to operate with a commonmode voltage that is above ground. The HMC8119 I/Q inputs
are ground referenced and dc coupling to a differential signal
source with a common-mode output voltage other than 0 V
may cause degraded RF performance and possible device
damage from electrical overstress.
A zero IF direct conversion application circuit is shown in
Figure 81. An optional bias tee network is included for
applications requiring additional LO suppression correction.
When omitting the bias tee configuration, it is still important to
ac couple the IFIP, IFIN, IFQP, and IFQN pads to the DAC
VDAMP1 , VDAMP2
+
VGMIX
+
120pF
0.01µF
4.7µF
0.01µF
120pF
120pF
0.01µF
4.7µF
0.01µF
120pF
120pF
0.01µF
OPTIONAL
+
+
+
4.7µF
4.7µF
4.7µF
VGAMP
VDMULT
VGX3, VGX2
LOIN
IP BIAS
12
13
14
15
16
17
18
19
20
21
LOIN
11
VGX2
10
VGX3
9
VDMULT
8
VDAMP1
IFIN
7
VGAMP
I DAC
3
6
IFIP
VDAMP2
4
VGMIX
5
IN BIAS
X6
QN BIAS
2
RFOUT
QP BIAS
24
23
1
HMC8119
IFQP
22
13098-082
Q DAC
IFQN
RF OUTPUT
Figure 81. Zero IF Direct Conversion Application Circuit with Optional Bias Tee Network for Enhanced LO Suppression
Rev. A | Page 24 of 27
Data Sheet
HMC8119
ASSEMBLY DIAGRAM
VGMIX
VDAMP1 , VDAMP2
VGAMP
VDMULT
VGX2, VGX3
4.7µF
4.7µF
4.7µF
4.7µF
4.7µF
0.01µF
16
17
18
19
20
21
GND
GND
VDMULT
15
GND
14
LOIN
13
GND
12
VGX2
11
GND
10
VGX3
9
GND
8
VDAMP1
IFIN
7
GND
3
6
VGAMP
IFIP
GND
4
120pF
VDAMP2
5
GND
1mil
GOLD WIRE
(WEDGE BOND)
VGMIX
1mil
GOLD WIRE
(WEDGE BOND)
3mil
NOMINAL GAP
RFOUT
GND
24
23
22
2
IFQN
1
IFQP
3mil
GOLD RIBBON
(WEDGE BOND)
13098-084
50Ω
TRANSMISSION
LINE
GND
HMC8119
Figure 82. Assembly Diagram
Rev. A | Page 25 of 27
HMC8119
Data Sheet
MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS
Attach the die directly to the ground plane eutectically or with
conductive epoxy.
To bring RF to and from the chip, use 50 Ω microstrip transmission lines on 0.127 mm (5 mil) thick alumina thin film
substrates (see Figure 83).
General Handling
Handle the chip on the edges only using a vacuum collet or with
a sharp pair of bent tweezers. Because the surface of the chip
has fragile air bridges, never touch the surface of the chip with a
vacuum collet, tweezers, or fingers.
MOUNTING
0.05mm (0.002") THICK GaAs MMIC
The chip is back metallized and can be die mounted with gold/tin
(AuSn) eutectic preforms or with electrically conductive epoxy.
The mounting surface must be clean and flat.
RIBBON BOND
0.076mm
(0.003")
Eutectic Die Attach
It is best to use an 80%/20% gold/tin preform with a work surface
temperature of 255°C and a tool temperature of 265°C. When
hot 90%/10% nitrogen/hydrogen gas is applied, maintain tool tip
temperature at 290°C. Do not expose the chip to a temperature
greater than 320°C for more than 20 sec. No more than 3 sec of
scrubbing is required for attachment.
0.127mm (0.005") THICK ALUMINA
THIN FILM SUBSTRATE
13098-085
RF GROUND PLANE
Figure 83. Routing RF Signals
To minimize bond wire length, place microstrip substrates as
close to the die as possible. Typical die to substrate spacing is
0.076 mm to 0.152 mm (3 mil to 6 mil).
HANDLING PRECAUTIONS
To avoid permanent damage, adhere to the following storage,
cleanliness, static sensitivity, transients, and general handling
precautions.
Storage
All bare die ship in either waffle or gel-based ESD protective
containers, sealed in an ESD protective bag. After opening the
sealed ESD protective bag, all die must be stored in a dry
nitrogen environment.
Cleanliness
Handle the chips in a clean environment. Never use liquid
cleaning systems to clean the chip.
Static Sensitivity
Follow ESD precautions to protect against ESD strikes.
Epoxy Die Attach
ABLEBOND 84-1LMIT is recommended for die attachment.
Apply a minimum amount of epoxy to the mounting surface so
that a thin epoxy fillet is observed around the perimeter of the
chip after placing it into position. Cure the epoxy per the schedule
provided by the manufacturer.
WIRE BONDING
RF bonds made with 0.003 in. × 0.0005 in. gold ribbon are recommended for the RF port, and wedge bonds with 0.025 mm (1 mil)
diameter gold wire are recommended for the IF and LO ports.
These bonds must be thermosonically bonded with a force of
40 g to 60 g. DC bonds of 0.001 in. (0.025 mm) diameter,
thermosonically bonded, are recommended. Create ball bonds
with a force of 40 g to 50 g and wedge bonds with a force of 18 g
to 22 g. Create all bonds with a nominal stage temperature of
150°C. Apply a minimum amount of ultrasonic energy to achieve
reliable bonds. Keep all bonds as short as possible, less than
12 mil (0.31 mm).
Transients
Suppress instrument and bias supply transients while bias is
applied. To minimize inductive pickup, use shielded signal and
bias cables.
Rev. A | Page 26 of 27
Data Sheet
HMC8119
OUTLINE DIMENSIONS
3.601
0.320
0.510
0.472
0.05
0.15 0.15 0.15 0.15 0.15 0.15 0.15 0.15 0.15 0.15 0.15 0.15 0.15 0.15
0.058
5
6
4
7
8
9
10
11 12 13 14 15 16 17 18 19 20 21
0.168
0.307
3
0.648
1.609
2
0.307
0.085
0.120
0.085
1
0.238
22
SIDE VIEW
TOP VIEW
0.125
0.125
(CIRCUIT SIDE)
0.130
03-31-2015-A
24 23
0.120
Figure 84. 24-Pad Bare Die [CHIP]
(C-24-3)
Dimensions shown in millimeters
ORDERING GUIDE
Model1
HMC8119
HMC8119-SX
1
2
Temperature Range
−55°C to +85°C
−55°C to +85°C
Package Description
24-Pad Bare Die [CHIP]
24-Pad Bare Die [CHIP]
The HMC8119-SX is two pairs of the die in a gel pack for the sample orders.
This is a waffle pack option; contact Analog Devices, Inc., for additional packaging options.
©2016 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D13098-0-2/16(A)
Rev. A | Page 27 of 27
Package Option2
C-24-3
C-24-3