71 GHz to 76 GHz,
E-Band I/Q Upconverter
HMC8118
Data Sheet
FEATURES
GENERAL DESCRIPTION
Conversion loss: 11 dB typical
Sideband rejection: 33 dBc typical
Input power for 1 dB compression (P1dB): 14 dBm typical
Input third-order intercept (IP3): 22 dBm typical
Input second-order intercept (IP2): −5 dBm typical
6× local oscillator (LO) leakage at RFOUT: −27 dBm typical
RF return loss: 6 dB typical
LO return loss: 18 dB typical
Die size: 3.601 mm × 1.609 mm × 0.05 mm
The HMC8118 is an integrated E-band gallium arsenide (GaAs)
monolithic microwave integrated circuit (MMIC) in-phase/
quadrature (I/Q) upconverter chip that operates from 71 GHz
to 76 GHz. The HMC8118 provides a small signal conversion
loss of 11 dB with 33 dBc of sideband rejection across the
frequency band. The device uses an image rejection mixer that
is driven by a 6× LO multiplier. Differential I and Q mixer inputs
are provided. The inputs can be driven with differential I and Q
baseband waveforms for direct conversion applications.
Alternatively, the inputs can be driven using an external 90°
hybrid and two external 180° hybrids for single sideband
applications. All data includes the effect of a 1 mil gold wire
wedge bond on the intermediate frequency (IF) ports.
APPLICATIONS
E-band communication systems
High capacity wireless backhaul
Test and measurement
FUNCTIONAL BLOCK DIAGRAM
3
12
13
14
15
16
17
18
19
20
21
LOIN
11
VGX2
10
VGX3
9
VDMULT
8
VDAMP1
7
VGAMP
IFIP
VDAMP2
4
VGMIX
6
5
IFIN
6×
24
23
1
IFQN
IFQP
HMC8118
22
13095-001
RFOUT
2
Figure 1.
Rev. A
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©2016 Analog Devices, Inc. All rights reserved.
Technical Support
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HMC8118
Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Upper Sideband (USB) Selected, IF = 1000 MHz .................. 16
Applications ....................................................................................... 1
Upper Sideband (USB) Selected, IF = 2000 MHz .................. 18
General Description ......................................................................... 1
Spurious Performance, LSB ...................................................... 20
Functional Block Diagram .............................................................. 1
Spurious Performance, USB...................................................... 21
Revision History ............................................................................... 2
Theory of Operation ...................................................................... 22
Specifications..................................................................................... 3
Applications Information .............................................................. 23
Absolute Maximum Ratings ............................................................ 4
Biasing Sequence ........................................................................ 23
Thermal Resistance ...................................................................... 4
Single SideBand Upconversion................................................. 23
ESD Caution .................................................................................. 4
Assembly Diagram ......................................................................... 25
Pin Configuration and Function Descriptions ............................. 5
Interface Schematics..................................................................... 6
Mounting and Bonding Techniques for Millimeterwave GaAs
MMICs ............................................................................................. 26
Typical Performance Characteristics ............................................. 7
Handling Precautions ................................................................ 26
Lower Sideband (LSB) Selected, IF = 1000 MHz ..................... 7
Mounting ..................................................................................... 26
Return Loss Peformance.............................................................. 9
Wire Bonding .............................................................................. 26
Lower Sideband (LSB) Selected, IF = 500 MHz ..................... 10
Outline Dimensions ....................................................................... 27
Lower Sideband (LSB) Selected, IF = 2000 MHz ................... 12
Ordering Guide .......................................................................... 27
Upper Sideband (USB) Selected, IF = 500 MHz .................... 14
REVISION HISTORY
2/16—Revision A: Initial Version
Rev. A | Page 2 of 27
Data Sheet
HMC8118
SPECIFICATIONS
TA = 25°C, IF = 1000 MHz, VGMIX = −1 V, VDAMPx = 4 V, VDMULT = 1.5 V, LO = 2 dBm, lower sideband (LSB) selected. Measurements
performed as an upconverter with external 90° and 180° hybrids at the IF ports, unless otherwise noted.
Table 1.
Parameter
OPERATING CONDITIONS
RF Frequency Range
LO Frequency Range
IF Frequency Range
LO Drive Range
PERFORMANCE
Conversion Loss
Sideband Rejection
Input Power for 1 dB Compression (P1dB)
Input Third-Order Intercept (IP3)
Input Second-Order Intercept (IP2)
6× LO Leakage at RFOUT
RF Return Loss
LO Return Loss
IF Return Loss
POWER SUPPLY
Supply Current
IDAMP 1
IDMULT 2
1
2
Test Conditions/Comments
Min
Typ
71
11.83
0
2
Direct probing to RF port
Under LO drive
11
33
14
22
−5
−27
6
18
25
175
80
Max
Unit
76
14.33
10
8
GHz
GHz
GHz
dBm
13
dB
dBc
dBm
dBm
dBm
dBm
dB
dB
dB
−19
mA
mA
Adjust VGAMP from −2 V to 0 V to achieve the total quiescent current, IDAMP = IDAMP1 + IDAMP2 = 175 mA.
Adjust VGX2 and VGX3 from −2 V to 0 V to achieve the quiescent current, IDMULT = 1 mA to 2 mA. Refer to the Applications Information section for more information.
Rev. A | Page 3 of 27
HMC8118
Data Sheet
ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
Table 2.
Parameter
Drain Bias Voltage
VDAMP1, VDAMP2
VDMULT
Gate Bias Voltage
VGAMP
VGX2, VGX3
VGMIX
LO Input Power
Maximum Junction Temperature
(to Maintain 1 Million Hours Mean
Time to Failure (MTTF))
Storage Temperature Range
Operating Temperature Range
ESD Sensitivity (Human Body Model)
Rating
Table 3. Thermal Resistance
Package Type
24-Pad Bare Die [CHIP]
4.5 V
3V
1
−3 V to 0 V
−3 V to 0 V
−3 V to 0 V
10 dBm
175°C
θJC1
73.7
Unit
°C/W
Based on ABLEBOND® 84-1LMIT as die attach epoxy with thermal
conductivity of 3.6 W/mK.
ESD CAUTION
−65°C to +150°C
−55°C to +85°C
100 V (Class 0)
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Rev. A | Page 4 of 27
Data Sheet
HMC8118
13
14
15
16
17
18
19
20
21
VGX3
GND
VGX2
GND
LOIN
GND
GND RFOUT GND
24
23
HMC8118
22
13095-002
12
GND
IFQP
11
VDMULT
1
10
GND
IFQN
9
VDAMP1
2
8
GND
IFIN
7
VGAMP
3
6
GND
IFIP
VDAMP2
4
GND
5 GND
VGMIX
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
Figure 2. Pad Configuration
Table 4. Pad Function Descriptions
Pad No.
1, 2
Mnemonic
IFQP, IFQN
3, 4
IFIN, IFIP
5, 7, 9, 11, 13,
15, 17, 19, 21,
22, 24
6
8, 12
GND
10
14
16, 18
20
23
Die Bottom
VGMIX
VDAMP2,
VDAMP1
VGAMP
VDMULT
VGX3, VGX2
LOIN
RFOUT
GND
Description
Positive and Negative IF Q Inputs. These pads are dc-coupled. When operation to dc is not required, block
these pads externally using a series capacitor with a value chosen to pass the necessary frequency range. For
operation to dc, these pads must not source or sink more than 3 mA of current or die malfunction and die
failure may result (see Figure 3).
Negative and Positive IF I Inputs. These pads are dc-coupled. When operation to dc is not required, block
these pads externally using a series capacitor with a value chosen to pass the necessary frequency range. For
operation to dc, these pads must not source or sink more than 3 mA of current or die malfunction and die
failure may result (see Figure 3).
Ground Connect (See Figure 4).
Gate Voltage for the FET Mixer (See Figure 5).
Power Supply Voltage for the First and the Second Stage LO Amplifier (See Figure 5).
Gate Voltage for the First and the Second Stage LO Amplifier (See Figure 5).
Power Supply Voltage for the Multiplier (See Figure 5).
Gate Voltage for the Multiplier (See Figure 5).
Local Oscillator Input. This pad is dc-coupled and matched to 50 Ω (see Figure 6).
RF Output. This pad is ac-coupled and matched to 50 Ω (see Figure 7).
Ground. The die bottom must be connected to RF/dc ground (see Figure 4).
Rev. A | Page 5 of 27
HMC8118
Data Sheet
INTERFACE SCHEMATICS
IFQP, IFQN
IFIN, IFIP
13095-003
13095-006
LOIN
200kΩ
Figure 3. IFIP, IFIN, IFQN, IFQP Interface
Figure 6. LOIN Interface
RFOUT
Figure 4. GND Interface
Figure 7. RFOUT Interface
VDAMP1 ,VDAMP2 ,
VDMULT
13095-005
100kΩ
VGMIX,VGAMP,
VGX2,VGX3
13095-007
13095-004
GND
Figure 5. VGMIX, VDAMP1, VDAMP2, VDMULT, VGAMP, VGX2, VGX3 Interface
Rev. A | Page 6 of 27
Data Sheet
HMC8118
TYPICAL PERFORMANCE CHARACTERISTICS
LOWER SIDEBAND (LSB) SELECTED, IF = 1000 MHz
0
0
TA = +25°C
TA = +85°C
TA = –55°C
–4
–6
–8
–10
–12
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
–10
–12
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
0
LO
LO
LO
LO
LO
LO
LO
–5
SIDEBAND REJECTION (dBc)
–10
–15
–20
–25
–30
–35
–40
–10
–15
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–20
–25
–30
–35
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
–45
71.0
26
26
24
24
22
22
IP3 (dBm)
28
18
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
TA = +25°C
TA = +85°C
TA = –55°C
LO
LO
LO
LO
LO
LO
LO
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
12
76.0
10
71.0
13095-010
72.0
76.0
18
14
14
71.5
75.5
20
16
16
12
75.0
Figure 12. Sideband Rejection vs. RF Frequency at Various LO Powers,
IFIN = −8 dBm, IF = 1000 MHz, LSB
28
20
71.5
Figure 10. Input IP3 vs. RF Frequency at Various Temperatures,
IFIN = 5 dBm, LO = 2 dBm, IF = 1000 MHz, LSB
71.5
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
75.0
75.5
76.0
Figure 13. Input IP3 vs. RF Frequency at Various LO Powers,
IFIN = 5 dBm, IF = 1000 MHz, LSB
Rev. A | Page 7 of 27
13095-013
72.0
13095-009
71.5
13095-012
–40
Figure 9. Sideband Rejection vs. RF Frequency at Various Temperatures,
IFIN = −8 dBm, LO = 2 dBm, IF = 1000 MHz, LSB
10
71.0
71.5
Figure 11. Conversion Gain vs. RF Frequency at Various LO Powers,
IFIN = −8 dBm, IF = 1000 MHz, LSB
TA = +25°C
TA = +85°C
TA = –55°C
–5
SIDEBAND REJECTION (dBc)
–8
–16
71.0
0
IP3 (dBm)
–6
13095-011
72.0
13095-008
71.5
Figure 8. Conversion Gain vs. RF Frequency at Various Temperatures,
IFIN = −8 dBm, LO = 2 dBm, IF = 1000 MHz, LSB
–45
71.0
–4
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–14
–14
–16
71.0
LO
LO
LO
LO
LO
LO
LO
–2
CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
–2
Data Sheet
0
0
–2
–2
–4
–4
–6
–6
–8
–12
–12
TA = +25°C
TA = +85°C
TA = –55°C
71.5
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
–14
76.0
–16
71.0
13095-014
–14
Figure 14. Input IP2 vs. RF Frequency at Various Temperatures,
IFIN = 5 dBm, LO = 2 dBm, IF = 1000 MHz, LSB
–10
–15
–15
75.0
75.5
76.0
–20
–25
–30
–25
–30
–35
–40
–40
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
–45
71.0
16
14
12
10
8
6
4
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
13095-016
TA = +25°C
TA = +85°C
TA = –55°C
71.5
71.5
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
Figure 18. 6× LO Leakage at RFOUT vs. RF Frequency at Various LO Powers,
IFIN = 5 dBm, IF = 1000 MHz, LSB
18
2
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–20
–35
71.5
LO
LO
LO
LO
LO
LO
LO
13095-018
LEAKAGE (dBm)
–10
13095-015
LEAKAGE (dBm)
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
–5
Figure 15. 6× LO Leakage at RFOUT vs. RF Frequency at Various Temperatures,
IFIN = 5 dBm, LO = 2 dBm, IF = 1000 MHz, LSB
P1dB (dBm)
72.0
0
TA = +25°C
TA = +85°C
TA = –55°C
–5
0
71.0
71.5
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
Figure 17. Input IP2 vs. RF Frequency at Various LO Powers,
IFIN = 5 dBm, IF = 1000 MHz, LSB
0
–45
71.0
LO
LO
LO
LO
LO
LO
LO
–10
–10
–16
71.0
–8
13095-017
IP2 (dBm)
IP2 (dBm)
HMC8118
Figure 16. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 2 dBm, IF = 1000 MHz, LSB
Rev. A | Page 8 of 27
Data Sheet
HMC8118
0
0
–5
–5
–10
–10
RETURN LOSS (dB)
–15
–20
–25
–30
TA = +25°C
TA = +85°C
TA = –55°C
–20
–25
–30
11.5
12.0
13.5
12.5
13.0
LO FREQUENCY (GHz)
14.0
14.5
15.0
–45
11.0
11.5
12.0
12.5
13.0
13.5
LO FREQUENCY (GHz)
14.0
14.5
15.0
13095-023
–45
11.0
–40
13095-020
–40
Figure 22. LO Port Return Loss vs. LO Frequency at Various LO Powers
Figure 19. LO Port Return Loss vs. LO Frequency at Various Temperatures,
LO = 2 dBm
0
0
TA = +25°C
TA = +85°C
TA = –55°C
–1
–2
–2
RETURN LOSS (dB)
–3
–4
–5
–6
–7
–4
–5
–6
–7
–8
–9
–9
72.0
71.5
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
–10
71.0
Figure 20. RF Port Return Loss vs. RF Frequency at Various Temperatures,
RFIN = −10 dBm, LO = 2 dBm at LO = 12 GHz
IFIP
IFIN
IFQN
IFQP
–10
–15
–20
–25
–30
0
2
4
6
8
10
IF FREQUENCY (GHz)
12
14
16
13095-021
–35
–40
71.5
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
Figure 23. RF Port Return Loss vs. RF Frequency at Various LO Powers,
RFIN = −10 dBm, LO = 12 GHz
0
–5
= 0dBm
= 2dBm
= 4dBm
= 6dBm
= 8dBm
–3
–8
–10
71.0
LO
LO
LO
LO
LO
–1
13095-019
RETURN LOSS (dB)
–15
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–35
–35
RETURN LOSS (dB)
LO
LO
LO
LO
LO
LO
LO
13095-087
RETURN LOSS (dB)
RETURN LOSS PEFORMANCE
Figure 21. IF Port Return Loss vs. IF Frequency, LO = 2 dBm at LO = 12 GHz
Rev. A | Page 9 of 27
HMC8118
Data Sheet
LOWER SIDEBAND (LSB) SELECTED, IF = 500 MHz
0
0
TA = +25°C
TA = +85°C
TA = –55°C
–4
–6
–8
–10
–12
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
–10
–12
TA = +25°C
TA = +85°C
TA = –55°C
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
Figure 27. Conversion Gain vs. RF Frequency at Various LO Powers,
IFIN = −8 dBm, IF = 500 MHz, LSB
LO
LO
LO
LO
LO
LO
LO
–10
SIDEBAND REJECTION (dBc)
–15
–20
–25
–30
–35
–40
–45
–15
–20
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–25
–30
–35
–40
–45
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
–55
71.0
13095-026
71.5
Figure 25. Sideband Rejection vs. RF Frequency at Various Temperatures,
IFIN = −8 dBm, LO = 2 dBm, IF = 500 MHz, LSB
71.5
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
13095-029
–50
–50
Figure 28. Sideband Rejection vs. RF Frequency at Various LO Powers,
IFIN = −8 dBm, IF = 500 MHz, LSB
30
30
TA = +25°C
TA = +85°C
TA = –55°C
26
28
26
24
22
22
IP3 (dBm)
24
20
18
16
20
LO
LO
LO
LO
LO
LO
LO
18
16
14
12
12
71.5
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
13095-027
14
Figure 26. Input IP3 vs. RF Frequency at Various Temperatures,
IFIN = 5 dBm, LO = 2 dBm, IF = 500 MHz, LSB
10
71.0
71.5
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
75.0
75.5
76.0
Figure 29. Input IP3 vs. RF Frequency at Various LO Powers,
IFIN = 5 dBm, IF = 500 MHz, LSB
Rev. A | Page 10 of 27
13095-030
28
10
71.0
71.5
–5
–10
SIDEBAND REJECTION (dBc)
–8
–16
71.0
–5
IP3 (dBm)
–6
13095-028
72.0
13095-025
71.5
Figure 24. Conversion Gain vs. RF Frequency at Various Temperatures,
IFIN = −8 dBm, LO = 2 dBm, IF = 500 MHz, LSB
–55
71.0
–4
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–14
–14
–16
71.0
LO
LO
LO
LO
LO
LO
LO
–2
CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
–2
HMC8118
0
0
–2
–2
–4
–4
–6
–6
–8
–10
–12
TA = +25°C
TA = +85°C
TA = –55°C
71.5
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
–14
76.0
–16
71.0
13095-031
–14
Figure 30. Input IP2 vs. RF Frequency at Various Temperatures,
IFIN = 5 dBm, LO = 2 dBm, IF = 500 MHz, LSB
–20
75.0
75.5
76.0
–20
–25
–35
–40
–30
–35
–40
–45
–45
–50
–50
–55
–55
71.5
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
–60
71.0
Figure 31. 6× LO Leakage at RFOUT vs. RF Frequency at Various Temperatures,
IFIN = 5 dBm, LO = 2 dBm, IF = 500 MHz, LSB
16
14
12
10
8
6
4
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
13095-033
TA = +25°C
TA = +85°C
TA = –55°C
71.5
71.5
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
75.0
75.5
76.0
Figure 34. 6× LO Leakage at RFOUT vs. RF Frequency at Various LO Powers,
IFIN = 5 dBm, IF = 500 MHz, LSB
18
2
LO
LO
LO
LO
LO
LO
LO
13095-035
LEAKAGE (dBm)
–30
13095-032
LEAKAGE (dBm)
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
–15
–25
P1dB (dBm)
72.0
–10
TA = +25°C
TA = +85°C
TA = –55°C
–15
0
71.0
71.5
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
Figure 33. Input IP2 vs. RF Frequency at Various LO Powers,
IFIN = 5 dBm, IF = 500 MHz, LSB
–10
–60
71.0
LO
LO
LO
LO
LO
LO
LO
–10
–12
–16
71.0
–8
13095-034
IP2 (dBm)
IP2 (dBm)
Data Sheet
Figure 32. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 2 dBm, IF = 500 MHz, LSB
Rev. A | Page 11 of 27
HMC8118
Data Sheet
LOWER SIDEBAND (LSB) SELECTED, IF = 2000 MHz
0
0
TA = +25°C
TA = +85°C
TA = –55°C
–4
–6
–8
–10
–12
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
–10
–12
72.0
72.5
73.0
73.5
74.0
74.5
75.0
75.5
76.0
RF FREQUENCY (GHz)
Figure 38. Conversion Gain vs. RF Frequency at Various LO Powers,
IFIN = −8 dBm, IF = 2000 MHz, LSB
LO
LO
LO
LO
LO
LO
LO
–5
SIDEBAND REJECTION (dBc)
–10
–15
–20
–25
–30
–35
–40
–45
–10
–15
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–20
–25
–30
–35
–40
72.5
73.0
73.5
74.0
74.5
75.0
75.5
76.0
–50
71.0
Figure 36. Sideband Rejection vs. RF Frequency at Various Temperatures,
IFIN = −8 dBm, LO = 2 dBm, IF = 2000 MHz, LSB
28
26
26
24
24
22
22
IP3 (dBm)
30
28
18
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
16
TA = +25°C
TA = +85°C
TA = –55°C
71.5
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
LO
LO
LO
LO
LO
LO
LO
12
76.0
76.0
18
14
13095-038
12
75.5
20
16
14
75.0
Figure 39. Sideband Rejection vs. RF Frequency at Various LO Powers,
IFIN = −8 dBm, IF = 2000 MHz, LSB
30
20
71.5
Figure 37. Input IP3 vs. RF Frequency at Various Temperatures,
IFIN = 5 dBm, LO = 2 dBm, IF = 2000 MHz, LSB
10
71.0
71.5
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
75.0
75.5
76.0
Figure 40. Input IP3 vs. RF Frequency at Various LO Powers,
IFIN = 5 dBm, IF = 2000 MHz, LSB
Rev. A | Page 12 of 27
13095-041
72.0
13095-037
71.5
13095-040
–45
RF FREQUENCY (GHz)
10
71.0
71.5
0
TA = +25°C
TA = +85°C
TA = –55°C
–5
SIDEBAND REJECTION (dBc)
–8
–16
71.0
0
IP3 (dBm)
–6
13095-039
72.0
13095-036
71.5
Figure 35. Conversion Gain vs. RF Frequency at Various Temperatures,
IFIN = −8 dBm, LO = 2 dBm, IF = 2000 MHz, LSB
–50
71.0
–4
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–14
–14
–16
71.0
LO
LO
LO
LO
LO
LO
LO
–2
CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
–2
Data Sheet
HMC8118
0
0
TA = +25°C
TA = +85°C
TA = –55°C
–2
–4
–6
–6
–8
–10
–10
–12
–12
–14
–14
71.5
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
–16
71.0
TA = +25°C
TA = +85°C
TA = –55°C
–10
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
–5
75.0
LO
LO
LO
LO
LO
LO
LO
–10
–15
LEAKAGE (dBm)
–15
–20
–25
–30
–20
75.5
76.0
–30
–35
–40
–40
–45
–45
71.5
72.0
72.5
73.0
73.5
74.0
74.5
75.0
75.5
76.0
RF FREQUENCY (GHz)
Figure 42. 6× LO Leakage at RFOUT vs. RF Frequency at Various Temperatures,
IFIN = 5 dBm, LO = 2 dBm, IF = 2000 MHz, LSB
–50
71.0
18
16
14
12
10
8
6
71.5
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
13095-044
TA = +25°C
TA = +85°C
TA = –55°C
2
71.5
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
Figure 45. 6× LO Leakage at RFOUT vs. RF Frequency at Various LO Powers,
IFIN = 5 dBm, IF = 2000 MHz, LSB
20
4
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–25
–35
13095-043
LEAKAGE (dBm)
72.0
0
0
–5
0
71.0
71.5
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
Figure 44. Input IP2 vs. RF Frequency at Various LO Powers,
IFIN = 5 dBm, IF = 2000 MHz, LSB
Figure 41. Input IP2 vs. RF Frequency at Various Temperatures,
IFIN = 5 dBm, LO = 2 dBm, IF = 2000 MHz, LSB
–50
71.0
LO
LO
LO
LO
LO
LO
LO
13095-046
–16
71.0
P1dB (dBm)
–8
13095-045
IP2 (dBm)
–4
13095-042
IP2 (dBm)
–2
Figure 43. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 2 dBm, IF = 2000 MHz, LSB
Rev. A | Page 13 of 27
HMC8118
Data Sheet
UPPER SIDEBAND (USB) SELECTED, IF = 500 MHz
0
0
TA = +25°C
TA = +85°C
TA = –55°C
–4
–6
–8
–10
–12
–14
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
–10
–12
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
Figure 49. Conversion Gain vs. RF Frequency at Various LO Powers,
IFIN = −8 dBm, IF = 500 MHz, USB
–5
–20
–25
–30
–35
–40
–45
–15
–20
–25
–30
LO
LO
LO
LO
LO
LO
LO
–35
–40
–45
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
–50
71.0
13095-048
71.5
Figure 47. Sideband Rejection vs. RF Frequency at Various Temperatures,
IFIN = −8 dBm, LO = 2 dBm, IF = 500 MHz, USB
26
26
24
24
22
22
IP3 (dBm)
28
18
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
TA = +25°C
TA = +85°C
TA = –55°C
71.5
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
LO
LO
LO
LO
LO
LO
LO
12
76.0
76.0
18
14
13095-049
12
75.5
20
16
16
14
75.0
Figure 50. Sideband Rejection vs. RF Frequency at Various LO Powers,
IFIN = −8 dBm, IF = 500 MHz, USB
28
20
71.5
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
10
71.0
71.5
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
75.0
75.5
76.0
Figure 51. Input IP3 vs. RF Frequency at Various LO Powers,
IFIN = 5 dBm, IF = 500 MHz, USB
Figure 48. Input IP3 vs. RF Frequency at Various Temperatures,
IFIN = 5 dBm, LO = 2 dBm, IF = 500 MHz, USB
Rev. A | Page 14 of 27
13095-052
–15
–10
13095-051
SIDEBAND REJECTION (dBc)
–10
10
71.0
71.5
0
TA = +25°C
TA = +85°C
TA = –55°C
–5
SIDEBAND REJECTION (dBc)
–8
–16
71.0
0
IP3 (dBm)
–6
13095-050
71.5
Figure 46. Conversion Gain vs. RF Frequency at Various Temperatures,
IFIN = −8 dBm, LO = 2 dBm, IF = 500 MHz, USB
–50
71.0
–4
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–14
13095-047
–16
71.0
LO
LO
LO
LO
LO
LO
LO
–2
CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
–2
Data Sheet
HMC8118
0
0
TA = +25°C
TA = +85°C
TA = –55°C
–2
–4
–6
–6
–8
–10
–10
–12
–12
–14
–14
71.5
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
–16
71.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
–10
LO
LO
LO
LO
LO
LO
LO
–5
TA = +25°C
TA = +85°C
TA = –55°C
–5
–10
–15
LEAKAGE (dBm)
–15
LEAKAGE (dBm)
72.0
75.5
76.0
0
0
–20
–25
–30
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–20
–25
–30
–35
–35
–40
–40
–45
–45
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
–50
71.0
13095-054
71.5
Figure 53. 6× LO Leakage at RFOUT vs. RF Frequency at Various Temperatures,
IFIN = 5 dBm, LO = 2 dBm, IF = 500 MHz, USB
18
16
14
12
10
8
6
2
71.5
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
13095-055
TA = +25°C
TA = +85°C
TA = –55°C
4
71.5
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
Figure 56. 6× LO Leakage at RFOUT vs. RF Frequency at Various LO Powers,
IFIN = 5 dBm, IF = 500 MHz, USB
20
0
71.0
71.5
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
Figure 55. Input IP2 vs. RF Frequency at Various LO Powers,
IFIN = 5 dBm, IF = 500 MHz, USB
Figure 52. Input IP2 vs. RF Frequency at Various Temperatures,
IFIN = 5 dBm, LO = 2 dBm, IF = 500 MHz, USB
–50
71.0
LO
LO
LO
LO
LO
LO
LO
13095-057
–16
71.0
P1dB (dBm)
–8
13095-056
IP2 (dBm)
–4
13095-053
IP2 (dBm)
–2
Figure 54. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 2 dBm, IF = 500 MHz, USB
Rev. A | Page 15 of 27
HMC8118
Data Sheet
UPPER SIDEBAND (USB) SELECTED, IF = 1000 MHz
0
0
TA = +25°C
TA = +85°C
TA = –55°C
–4
–6
–8
–10
–12
–14
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
–10
–12
TA = +25°C
TA = +85°C
TA = –55°C
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
Figure 60. Conversion Gain vs. RF Frequency at Various LO Powers,
IFIN = −8 dBm, IF = 1000 MHz, USB
LO
LO
LO
LO
LO
LO
LO
–5
SIDEBAND REJECTION (dBc)
–10
–15
–20
–25
–30
–35
–40
–45
–10
–15
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–20
–25
–30
–35
–40
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
–50
71.0
26
26
24
24
22
22
IP3 (dBm)
28
18
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
16
14
LO
LO
LO
LO
LO
LO
LO
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
12
76.0
13095-060
72.0
76.0
18
14
TA = +25°C
TA = +85°C
TA = –55°C
71.5
75.5
20
16
12
75.0
Figure 61. Sideband Rejection vs. RF Frequency at Various LO Powers,
IFIN = −8 dBm, IF = 1000 MHz, USB
28
20
71.5
Figure 59. Input IP3 vs. RF Frequency at Various Temperatures,
IFIN = 5 dBm, LO = 2 dBm, IF = 1000 MHz, USB
10
71.0
71.5
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
75.0
75.5
76.0
Figure 62. Input IP3 vs. RF Frequency at Various LO Powers,
IFIN = 5 dBm, IF = 1000 MHz, USB
Rev. A | Page 16 of 27
13095-063
72.0
13095-059
71.5
13095-062
–45
Figure 58. Sideband Rejection vs. RF Frequency at Various Temperatures,
IFIN = −8 dBm, LO = 2 dBm, IF = 1000 MHz, USB
10
71.0
71.5
0
–5
SIDEBAND REJECTION (dBc)
–8
–16
71.0
0
IP3 (dBm)
–6
13095-061
71.5
Figure 57. Conversion Gain vs. RF Frequency at Various Temperatures,
IFIN = −8 dBm, LO = 2 dBm, IF = 1000 MHz, USB
–50
71.0
–4
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–14
13095-058
–16
71.0
LO
LO
LO
LO
LO
LO
LO
–2
CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
–2
HMC8118
0
0
–2
–2
–4
–4
–6
–6
–12
–12
TA = +25°C
TA = +85°C
TA = –55°C
71.5
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
–14
76.0
–16
71.0
13095-064
–14
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
Figure 66. Input IP2 vs. RF Frequency at Various LO Powers,
IFIN = 5 dBm, IF = 1000 MHz, USB
–0
0
TA = +25°C
TA = +85°C
TA = –55°C
–10
–10
–15
LEAKAGE (dBm)
–20
–25
–30
–25
–30
–35
–40
–40
–45
–45
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
–50
71.0
13095-065
71.5
Figure 64. 6× LO Leakage at RFOUT vs. RF Frequency at Various Temperatures,
IFIN = 5 dBm, LO = 2 dBm, IF = 1000 MHz, USB
16
14
12
10
8
6
0
71.0
71.5
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
13095-066
TA = +25°C
TA = +85°C
TA = –55°C
2
71.5
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
Figure 67. 6× LO Leakage at RFOUT vs. RF Frequency at Various LO Powers,
IFIN = 5 dBm, IF = 1000 MHz, USB
18
4
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–20
–35
–50
71.0
LO
LO
LO
LO
LO
LO
LO
–5
–15
LEAKAGE (dBm)
71.5
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
Figure 63. Input IP2 vs. RF Frequency at Various Temperatures,
IFIN = 5 dBm, LO = 2 dBm, IF = 1000 MHz, USB
–5
P1dB (dBm)
LO
LO
LO
LO
LO
LO
LO
–10
–10
–16
71.0
–8
13095-067
–8
13095-068
IP2 (dBm)
IP2 (dBm)
Data Sheet
Figure 65. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 2 dBm, IF = 1000 MHz, USB
Rev. A | Page 17 of 27
HMC8118
Data Sheet
UPPER SIDEBAND (USB) SELECTED, IF = 2000 MHz
0
TA = +25°C
TA = +85°C
TA = –55°C
–2
CONVERSION GAIN (dBm)
–4
–6
–8
–10
–12
–14
–12
–14
–18
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
–20
71.0
72.5
73.0
73.5
74.0
74.5
75.0
75.5
76.0
0
TA = +25°C
TA = +85°C
TA = –55°C
–10
LO
LO
LO
LO
LO
LO
LO
–5
SIDEBAND REJECTION (dBc)
–5
–15
–20
–25
–30
–35
–40
–45
–10
–15
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–20
–25
–30
–35
–40
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
–50
71.0
26
24
24
22
22
IP3 (dBm)
28
26
18
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
16
14
LO
LO
LO
LO
LO
LO
LO
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
12
76.0
13095-071
72.0
76.0
18
14
TA = +25°C
TA = +85°C
TA = –55°C
71.5
75.5
20
16
12
75.0
Figure 72. Sideband Rejection vs. RF Frequency at Various LO Powers,
IFIN = −8 dBm, IF = 2000 MHz, USB
28
20
71.5
Figure 70. Input IP3 vs. RF Frequency at Various Temperatures,
IFIN = 5 dBm, LO = 2 dBm, IF = 2000 MHz, USB
10
71.0
71.5
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
75.0
75.5
76.0
Figure 73. Input IP3 vs. RF Frequency at Various LO Powers,
IFIN = 5 dBm, IF = 2000 MHz, USB
Rev. A | Page 18 of 27
13095-074
72.0
13095-070
71.5
13095-073
–45
Figure 69. Sideband Rejection vs. RF Frequency at Various Temperatures,
IFIN = −8 dBm, LO = 2 dBm, IF = 2000 MHz, USB
10
71.0
72.0
Figure 71. Conversion Gain vs. RF Frequency at Various LO Powers,
IFIN = −8 dBm , IF = 2000 MHz, USB
0
–50
71.0
71.5
RF FREQUENCY (GHz)
Figure 68. Conversion Gain vs. RF Frequency at Various Temperatures,
IFIN = −8 dBm, LO = 2 dBm, IF = 2000 MHz, USB
SIDEBAND REJECTION (dBc)
–10
–18
71.5
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–8
–16
–20
71.0
IP3 (dBm)
–6
–16
13095-069
CONVERSION GAIN (dBm)
–4
LO
LO
LO
LO
LO
LO
LO
–2
13095-072
0
Data Sheet
HMC8118
0
0
TA = +25°C
TA = +85°C
TA = –55°C
–2
–4
–6
–6
–8
–10
–10
–12
–12
–14
–14
71.5
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
–16
71.0
Figure 74. Input IP2 vs. RF Frequency at Various Temperatures,
IFIN = 5 dBm, LO = 2 dBm, IF = 2000 MHz, USB
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
LO
LO
LO
LO
LO
LO
LO
–5
–10
–15
LEAKAGE (dBm)
–15
–20
–25
–30
75.5
76.0
–25
–30
–35
–40
–40
–45
–45
71.5
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
Figure 75. 6× LO Leakage at RFOUT vs. RF Frequency at Various Temperatures,
IFIN = 5 dBm, LO = 2 dBm, IF = 2000 MHz, USB
–50
71.0
18
16
14
12
10
8
6
71.5
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
13095-077
TA = +25°C
TA = +85°C
TA = –55°C
2
71.5
72.0
72.5 73.0 73.5 74.0 74.5
RF FREQUENCY (GHz)
75.0
75.5
76.0
Figure 78. 6× LO Leakage at RFOUT vs. RF Frequency at Various LO Powers,
IFIN = 5 dBm, IF = 2000 MHz, USB
20
4
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
–20
–35
13095-076
LEAKAGE (dBm)
72.0
0
TA = +25°C
TA = +85°C
TA = –55°C
–10
0
71.0
71.5
= –4dBm
= –2dBm
= 0dBm
= +2dBm
= +4dBm
= +6dBm
= +8dBm
Figure 77. Input IP2 vs. RF Frequency at Various LO Powers,
IFIN = 5 dBm, IF = 2000 MHz, USB
0
–5
–50
71.0
LO
LO
LO
LO
LO
LO
LO
13095-079
–16
71.0
P1dB (dBm)
–8
13095-078
IP2 (dBm)
–4
13095-075
IP2 (dBm)
–2
Figure 76. Input P1dB vs. RF Frequency at Various Temperatures,
LO = 2 dBm, IF = 2000 MHz, USB
Rev. A | Page 19 of 27
HMC8118
Data Sheet
SPURIOUS PERFORMANCE, LSB
M × N Spurious Output, RF = 75 GHz
TA = 25°C, VGMIX = −1 V, VDAMPx = 4 V, VDMULT = 1.5 V, LO = 2 dBm.
IF = 500 MHz at IFIN = −5 dBm, LO frequency = 12.583 GHz
at LOIN = 2 dBm.
Mixer spurious products are measured in dBc from the RF output
power level. Spur values are (M × IF) − (N × LO). N/A means
not applicable.
M × N Spurious Outputs, RF = 72 GHz
IF = 500 MHz at IFIN = −5 dBm, LO frequency = 12.083 GHz
at LOIN = 2 dBm.
M × IF
0
1
2
3
4
5
0
N/A
N/A
N/A
N/A
N/A
N/A
1
N/A
N/A
N/A
N/A
N/A
N/A
2
N/A
N/A
N/A
N/A
N/A
N/A
N × LO
3
N/A
N/A
N/A
N/A
N/A
N/A
4
N/A
N/A
N/A
N/A
N/A
N/A
5
N/A
N/A
N/A
N/A
N/A
N/A
6
12.4
0.00
34.4
57.5
67.5
66.9
IF = 1000 MHz at IFIN = −5 dBm, LO frequency = 12.166 GHz
at LOIN = 2 dBm.
M × IF
0
1
2
3
4
5
0
N/A
N/A
N/A
N/A
N/A
N/A
1
N/A
N/A
N/A
N/A
N/A
N/A
2
N/A
N/A
N/A
N/A
N/A
N/A
N × LO
3
N/A
N/A
N/A
N/A
N/A
N/A
4
N/A
N/A
N/A
N/A
N/A
N/A
5
N/A
N/A
N/A
N/A
N/A
N/A
6
12.2
0.00
36.1
60.4
69.2
67.7
IF = 2000 MHz at IFIN = −5 dBm, LO frequency = 12.333 GHz
at LOIN = 2 dBm.
M × IF
0
1
2
3
4
5
0
N/A
N/A
N/A
N/A
N/A
N/A
1
N/A
N/A
N/A
N/A
N/A
N/A
2
N/A
N/A
N/A
N/A
N/A
N/A
N × LO
3
N/A
N/A
N/A
N/A
N/A
N/A
4
N/A
N/A
N/A
N/A
N/A
N/A
5
N/A
N/A
N/A
N/A
N/A
N/A
M × IF
0
1
2
3
4
5
0
N/A
N/A
N/A
N/A
N/A
N/A
1
N/A
N/A
N/A
N/A
N/A
N/A
2
N/A
N/A
N/A
N/A
N/A
N/A
N × LO
3
N/A
N/A
N/A
N/A
N/A
N/A
4
N/A
N/A
N/A
N/A
N/A
N/A
5
N/A
N/A
N/A
N/A
N/A
N/A
6
14.4
0.00
36.5
66.3
65.4
65.7
IF = 1000 MHz at IFIN = −5 dBm, LO frequency = 12.666 GHz
at LOIN = 2 dBm.
M × IF
0
1
2
3
4
5
0
N/A
N/A
N/A
N/A
N/A
N/A
1
N/A
N/A
N/A
N/A
N/A
N/A
2
N/A
N/A
N/A
N/A
N/A
N/A
N × LO
3
N/A
N/A
N/A
N/A
N/A
N/A
4
N/A
N/A
N/A
N/A
N/A
N/A
5
N/A
N/A
N/A
N/A
N/A
N/A
6
13.5
0.00
39.3
65.5
66.5
65.9
IF = 2000 MHz at IFIN = −5 dBm, LO frequency = 12.833 GHz
at LOIN = 2 dBm.
M × IF
6
12.5
0.00
43.4
62.5
67.2
65.7
Rev. A | Page 20 of 27
0
1
2
3
4
5
0
N/A
N/A
N/A
N/A
N/A
N/A
1
N/A
N/A
N/A
N/A
N/A
N/A
2
N/A
N/A
N/A
N/A
N/A
N/A
N × LO
3
N/A
N/A
N/A
N/A
N/A
N/A
4
N/A
N/A
N/A
N/A
N/A
N/A
5
N/A
N/A
N/A
N/A
N/A
N/A
6
15.9
0.00
63
65.3
67.5
65.5
Data Sheet
HMC8118
SPURIOUS PERFORMANCE, USB
M × N Spurious Outputs, RF = 75 GHz
TA = 25°C, VGMIX = −1 V, VDAMPx = 4 V, VDMULT = 1.5 V, LO = 2 dBm.
IF = 500 MHz at IFIN = −5 dBm, LO frequency = 12.416 GHz
at LOIN = 2 dBm.
Mixer spurious products are measured in dBc from the RF output
power level. Spur values are (M × IF) + (N × LO). N/A means
not applicable.
M × N Spurious Outputs, RF = 72 GHz
IF = 500 MHz at IFIN = −5 dBm, LO frequency = 11.916 GHz
at LOIN = 2 dBm.
M × IF
0
1
2
3
4
5
0
N/A
N/A
N/A
N/A
N/A
N/A
1
N/A
N/A
N/A
N/A
N/A
N/A
2
N/A
N/A
N/A
N/A
N/A
N/A
N × LO
3
N/A
N/A
N/A
N/A
N/A
N/A
4
N/A
N/A
N/A
N/A
N/A
N/A
5
N/A
N/A
N/A
N/A
N/A
N/A
6
16.9
0.00
38.8
56
65.3
67.3
IF = 1000 MHz at IFIN = −5 dBm, LO frequency = 11.833 GHz
at LOIN = 2 dBm.
M × IF
0
1
2
3
4
5
0
N/A
N/A
N/A
N/A
N/A
N/A
1
N/A
N/A
N/A
N/A
N/A
N/A
2
N/A
N/A
N/A
N/A
N/A
N/A
N × LO
3
N/A
N/A
N/A
N/A
N/A
N/A
4
N/A
N/A
N/A
N/A
N/A
N/A
5
N/A
N/A
N/A
N/A
N/A
N/A
6
15.9
0.00
49.4
54.3
65.1
65.8
IF = 2000 MHz at IFIN = −5 dBm, LO frequency = 11.666 GHz
at LOIN = 2 dBm.
M × IF
0
1
2
3
4
5
0
N/A
N/A
N/A
N/A
N/A
N/A
1
N/A
N/A
N/A
N/A
N/A
N/A
2
N/A
N/A
N/A
N/A
N/A
N/A
N × LO
3
N/A
N/A
N/A
N/A
N/A
N/A
4
N/A
N/A
N/A
N/A
N/A
N/A
5
N/A
N/A
N/A
N/A
N/A
N/A
M × IF
0
1
2
3
4
5
0
N/A
N/A
N/A
N/A
N/A
N/A
1
N/A
N/A
N/A
N/A
N/A
N/A
2
N/A
N/A
N/A
N/A
N/A
N/A
N × LO
3
N/A
N/A
N/A
N/A
N/A
N/A
4
N/A
N/A
N/A
N/A
N/A
N/A
5
N/A
N/A
N/A
N/A
N/A
N/A
6
15.7
0.00
40.1
54.4
64
65.5
IF = 1000 MHz at IFIN = −5 dBm, LO frequency = 12.333 GHz
at LOIN = 2 dBm.
M × IF
0
1
2
3
4
5
0
N/A
N/A
N/A
N/A
N/A
N/A
1
N/A
N/A
N/A
N/A
N/A
N/A
2
N/A
N/A
N/A
N/A
N/A
N/A
N × LO
3
N/A
N/A
N/A
N/A
N/A
N/A
4
N/A
N/A
N/A
N/A
N/A
N/A
5
N/A
N/A
N/A
N/A
N/A
N/A
6
15.8
0.00
43.4
62.5
57.7
58.9
IF = 2000 MHz at IFIN = −5 dBm, LO frequency = 12.166 GHz
at LOIN = 2 dBm.
M × IF
6
15.2
0.00
46
50.1
57
56.7
Rev. A | Page 21 of 27
0
1
2
3
4
5
0
N/A
N/A
N/A
N/A
N/A
N/A
1
N/A
N/A
N/A
N/A
N/A
N/A
2
N/A
N/A
N/A
N/A
N/A
N/A
N × LO
3
N/A
N/A
N/A
N/A
N/A
N/A
4
N/A
N/A
N/A
N/A
N/A
N/A
5
N/A
N/A
N/A
N/A
N/A
N/A
6
14.4
0.00
47.9
55.6
56.7
58.6
HMC8118
Data Sheet
THEORY OF OPERATION
The HMC8118 is a GaAs I/Q upconverter with an integrated
LO buffer and 6× multiplier. See Figure 79 for a functional
block diagram of the circuit architecture. The 6× multiplier
allows the use of a lower frequency range LO input signal,
typically between 11.83 GHz and 14.33 GHz. The 6× multiplier
is implemented using a cascade of 3× and 2× multipliers. LO
buffer amplifiers are included on chip to allow a typical LO
VDAMP2
IFIP
drive level of only 2 dBm for full performance. The LO path
feeds a quadrature splitter followed by on-chip baluns that drive
the I and Q mixer cores. The mixer cores comprise singly balanced
passive mixers. The RF outputs of the I and Q mixers are then
summed through an on-chip Wilkinson power combiner and
reactively matched to provide a single-ended 50 Ω output signal
at the RFOUT pad.
VGAMP
VDAMP1
VDMULT
VGX3
VGX2
LOIN
IFIN
2×
3×
VGMIX
RFOUT
IFQN
13095-080
NOTES
1. AC COUPLING, MATCHING ELEMENTS,
AND GND BOND PADS NOT ILLUSTRATED.
IFQP
Figure 79. Upconverter Circuit Architecture
Rev. A | Page 22 of 27
Data Sheet
HMC8118
APPLICATIONS INFORMATION
BIASING SEQUENCE
SINGLE SIDEBAND UPCONVERSION
The HMC8118 uses several amplifier and multiplier stages in
the LO signal path. The active stages all use depletion mode
pseudomorphic high electron mobility transistors (pHEMTs).
To ensure transistor damage does not occur, use the following
power-up bias sequence:
A typical single sideband upconversion circuit is shown in
Figure 80. For single sideband upconversions, an external 90°
hybrid splits the IF signal into quadrature terms. Then 180°
hybrids or baluns transfer differential signals to the I and Q
input pairs. Use an optional bias tee network to allow the
application of small dc offsets on the IFIP, IFIN, IFQP, and
IFQN input pads. By applying dc offsets to the I/Q mixer cores,
the 6× LO to RF leakage can be somewhat improved. However,
it is important to current limit the applied dc bias to avoid sourcing
or sinking more than ±3 mA of bias current. Depending on the
bias sources used, it may be prudent to add series resistance to
ensure the applied bias current does not exceed ±3 mA. For
applications not requiring enhanced LO suppression, omit the
bias tee and then dc couple the I/Q inputs to the 180° hybrids.
1.
2.
3.
4.
5.
Apply a −2 V bias to VGAMP, VGX2, and VGX3.
Apply a −1 V bias to VGMIX.
Apply 4 V to VDAMP1 and VDAMP2, and apply 1.5 V to VDMULT.
Adjust VGAMP between −2 V and 0 V to achieve a total
amplifier drain current (IDAMP1 + IDAMP2) of 175 mA.
Apply a LO input signal and adjust VGX2 and VGX3 between
−2 V and 0 V to achieve 80 mA of drain current on VDMULT.
To power down the HMC8118, follow the reverse procedure.
For additional guidance on general bias sequencing, see the
MMIC Amplifier Biasing Procedure application note.
VDAMP1 ,VDAMP2
VGMIX
120pF
0.01µF 4.7µF
VGAMP
VDMULT
4.7µF
0.01µF 120pF
120pF
0.01µF
4.7µF
0.01µF 120pF
120pF
0.01µF 4.7µF
4.7µF
VGX2,VGX3
LOIN
OPTIONAL
IP BIAS
VGMIX
VDAMP2
VGAMP
VDAMP1
VDMULT
VGX3
VGX2
LOIN
IFIP
180°
HYBRID
IN BIAS
6×
90°
HYBRID
QN BIAS
IFQN
180°
HYBRID
QP BIAS
IFQP
HMC8118
RFOUT
RFOUT
Figure 80. Single Sideband Upconversion Configuration with Optional DC Bias Tee Network for Enhanced LO Suppression
Rev. A | Page 23 of 27
13095-081
IFIN
IFIN
HMC8118
Data Sheet
Zero IF Direct Conversion
outputs. Most DACs are designed to operate with a commonmode voltage that is above ground. The HMC8118 I/Q inputs
are ground referenced and ac coupling to a differential signal
source with a common-mode output voltage other than 0 V
may cause degraded RF performance and possible device
damage from electrical overstress.
A zero IF direct conversion application circuit is shown in
Figure 81. An optional bias tee network is included for
applications requiring additional LO suppression correction.
When omitting the bias tee configuration, it is still important to
ac couple the IFIP, IFIN, IFQP, and IFQN pads to the DAC
VDAMP1 ,VDAMP2
VGMIX
120pF
0.01µF 4.7µF
VGAMP
VDMULT
4.7µF
0.01µF 120pF
120pF
0.01µF
4.7µF
0.01µF 120pF
120pF
0.01µF 4.7µF
4.7µF
VGX2,VGX3
LOIN
OPTIONAL
IP BIAS
VGMIX
VDAMP2
VGAMP
VDAMP1
VDMULT
VGX3
VGX2
LOIN
IFIP
I DAC
IN BIAS
QN BIAS
IFIN
6×
IFQN
Q DAC
IFQP
HMC8118
RFOUT
RFOUT
Figure 81. Zero IF Direct Conversion Application Circuit with Optional Bias Tee Network for Enhanced LO Suppression
Rev. A | Page 24 of 27
13095-082
QP BIAS
Data Sheet
HMC8118
ASSEMBLY DIAGRAM
VGMIX
VDAMP1, VDAMP2
VGAMP
VDMULT
VGX2,VGX3
4.7µF
4.7µF
4.7µF
4.7µF
4.7µF
0.01µF
9
10
11
12
13
14
15
16
17
18
19
20
21
GND
VDAMP1
GND
VDMULT
GND
VGX3
GND
VGX2
GND
LOIN
GND
IFIN
8
VGAMP
3
7
GND
IFIP
VDAMP2
6
4
VGMIX
5 GND
1mil GOLD WIRE
(WEDGE BOND)
120pF
1mil GOLD WIRE
(WEDGE BOND)
GND
3mil
NOMINAL
GAP
1mil GOLD WIRE
(WEDGE BOND)
2
IFQN
1
IFQP
GND RFOUT GND
50Ω
TRANSMISSION
LINE
23
22
1mil WIRE GOLD RIBBON
(WEDGE BOND)
13095-084
24
Figure 82. Assembly Diagram
Rev. A | Page 25 of 27
HMC8118
Data Sheet
MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS
Attach the die directly to the ground plane eutectically or with
conductive epoxy.
To bring RF to and from the chip, use 50 Ω microstrip transmission
lines on 0.127 mm (5 mil) thick alumina thin film substrates
(see Figure 83).
General Handling
Handle the chip on the edges only using a vacuum collet or with
a sharp pair of bent tweezers. Because the surface of the chip
has fragile air bridges, never touch the surface of the chip with a
vacuum collet, tweezers, or fingers.
MOUNTING
0.05mm (0.002") THICK GaAs MMIC
The chip is back metallized and can be die mounted with gold/tin
(AuSn) eutectic preforms or with electrically conductive epoxy.
The mounting surface must be clean and flat.
WIRE BOND
0.076mm
(0.003")
Eutectic Die Attach
It is best to use an 80%/20% gold/tin preform with a work surface
temperature of 255°C and a tool temperature of 265°C. When
hot 90%/10% nitrogen/hydrogen gas is applied, maintain tool tip
temperature at 290°C. Do not expose the chip to a temperature
greater than 320°C for more than 20 sec. No more than 3 sec of
scrubbing is required for attachment.
0.127mm (0.005") THICK ALUMINA
THIN FILM SUBSTRATE
13096-085
RF GROUND PLANE
Figure 83. Routing RF Signals
To minimize bond wire length, place microstrip substrates as
close to the die as possible. Typical die to substrate spacing is
0.076 mm to 0.152 mm (3 mil to 6 mil).
HANDLING PRECAUTIONS
To avoid permanent damage, adhere to the following storage,
cleanliness, static sensitivity, transients, and general handling
precautions.
Storage
All bare die ship in either waffle or gel-based ESD protective
containers, sealed in an ESD protective bag. After opening the
sealed ESD protective bag, all die must be stored in a dry
nitrogen environment.
Cleanliness
Handle the chips in a clean environment. Never use liquid
cleaning systems to clean the chip.
Static Sensitivity
Follow ESD precautions to protect against ESD strikes >±100 V.
Epoxy Die Attach
ABLEBOND 84-1LMIT is recommended for die attachment.
Apply a minimum amount of epoxy to the mounting surface so
that a thin epoxy fillet is observed around the perimeter of the
chip after placing it into position. Cure the epoxy per the
schedule provided by the manufacturer.
WIRE BONDING
RF bonds made with 0.003 in. × 0.0005 in. gold ribbon are recommended for the RF port, and wedge bonds with 0.025 mm (1 mil)
diameter gold wire are recommended for the IF and LO ports.
These bonds must be thermosonically bonded with a force of
40 g to 60 g. DC bonds of 0.001 in. (0.025 mm) diameter,
thermosonically bonded, are recommended. Create ball bonds
with a force of 40 g to 50 g and wedge bonds with a force of 18 g
to 22 g. Create all bonds with a nominal stage temperature of
150°C. Apply a minimum amount of ultrasonic energy to
achieve reliable bonds. Keep all bonds as short as possible, less
than 12 mil (0.31 mm).
Transients
Suppress instrument and bias supply transients while bias is
applied. To minimize inductive pickup, use shielded signal and
bias cables.
Rev. A | Page 26 of 27
Data Sheet
HMC8118
OUTLINE DIMENSIONS
3.601
0.320
0.510
0.472
0.05
0.15 0.15 0.15 0.15 0.15 0.15 0.15 0.15 0.15 0.15 0.15 0.15 0.15 0.15
0.058
6
5
7
8
9
10
11 12 13 14 15 16 17 18 19 20 21
4
0.168
0.307
3
0.648
1.609
2
0.307
0.085
0.120
0.085
1
0.238
22
SIDE VIEW
TOP VIEW
0.125
0.125
(CIRCUIT SIDE)
0.130
03-31-2015-A
24 23
0.120
Figure 84. 24-Pad Bare Die [CHIP]
(C-24-3)
Dimensions shown in millimeters
ORDERING GUIDE
Model 1
HMC8118
HMC8118-SX
1
2
Temperature Range
−55°C to +85°C
−55°C to +85°C
Package Description
24-Pad Bare Die [CHIP]
24-Pad Bare Die [CHIP]
The HMC8118-SX is two pairs of the die in a gel pack for the sample orders.
This is a waffle pack option; contact Analog Devices, Inc., for additional packaging options.
©2016 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D13095-0-2/16(A)
Rev. A | Page 27 of 27
Package Option 2
C-24-3
C-24-3